利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

37 条记录 (耗时 0.024 秒)

    Methods and scatterometers, lithographic systems, and lithographic processing cells
    3.
    发明授权
    Methods and scatterometers, lithographic systems, and lithographic processing cells 有权
    方法和散射仪，光刻系统和光刻处理单元

    公开(公告)号：US09081303B2

    公开(公告)日：2015-07-14

    申请号：US12846652

    申请日：2010-07-29

    申请人： Hugo Augustinus Joseph Cramer ,  Arie Jeffrey Den Boef ,  Henricus Johannes Lambertus Megens ,  Hendrik Jan Hidde Smilde ,  Adrianus Johannes Hendrikus Schellekens ,  Michael Kubis

    发明人： Hugo Augustinus Joseph Cramer ,  Arie Jeffrey Den Boef ,  Henricus Johannes Lambertus Megens ,  Hendrik Jan Hidde Smilde ,  Adrianus Johannes Hendrikus Schellekens ,  Michael Kubis

    IPC分类号： G03F7/20 ,  G01B11/24 ,  G01B11/30 ,  G01N21/47 ,  G01B11/02 ,  G01B11/22 ,  G01N21/88

    CPC分类号： G03F7/70641 ,  G01B11/02 ,  G01B11/22 ,  G01B11/24 ,  G01B11/30 ,  G01N21/47 ,  G01N21/88 ,  G03F7/70608 ,  G03F7/70625 ,  G03F7/70633 ,  G03F7/7065

    摘要： In a method of determining the focus of a lithographic apparatus used in a lithographic process on a substrate, the lithographic process is used to form a structure on the substrate, the structure having at least one feature which has an asymmetry in the printed profile which varies as a function of the focus of the lithographic apparatus on the substrate. A first image of the periodic structure is formed and detected while illuminating the structure with a first beam of radiation. The first image is formed using a first part of non-zero order diffracted radiation. A second image of the periodic structure is formed and detected while illuminating the structure with a second beam of radiation. The second image is formed using a second part of the non-zero order diffracted radiation which is symmetrically opposite to the first part in a diffraction spectrum. The ratio of the intensities of the measured first and second portions of the spectra is determined and used to determine the asymmetry in the profile of the periodic structure and/or to provide an indication of the focus on the substrate. In the same instrument, an intensity variation across the detected portion is determined as a measure of process-induced variation across the structure. A region of the structure with unwanted process variation can be identified and excluded from a measurement of the structure.

    摘要翻译： 在确定在基板上的光刻工艺中使用的光刻设备的焦点的方法中，使用光刻工艺在基板上形成结构，该结构具有至少一个特征，该特征在印刷图案中具有不对称性 作为光刻设备在基板上的焦点的函数。 在用第一辐射束照射结构的同时形成和检测周期性结构的第一图像。 第一图像使用非零阶衍射辐射的第一部分形成。 在用第二辐射束照射结构的同时形成和检测周期性结构的第二图像。 使用在衍射光谱中与第一部分对称相对的非零级衍射辐射的第二部分形成第二图像。 确定测量的第一和第二部分光谱的强度的比率并用于确定周期性结构的轮廓的不对称性和/或提供焦点在基底上的指示。 在相同的仪器中，被检测部分的强度变化被确定为整个结构的过程引起的变化的量度。 可以从结构的测量中识别并排除具有不期望的工艺变化的结构区域。

    Inspection method for lithography
    4.
    发明授权
    Inspection method for lithography 有权
    光刻检验方法

    公开(公告)号：US08830447B2

    公开(公告)日：2014-09-09

    申请号：US13264256

    申请日：2010-05-04

    申请人： Arie Jeffrey Den Boef ,  Hugo Augustinus Joseph Cramer ,  Paul Christiaan Hinnen

    发明人： Arie Jeffrey Den Boef ,  Hugo Augustinus Joseph Cramer ,  Paul Christiaan Hinnen

    IPC分类号： G03B27/52 ,  G03F7/20

    CPC分类号： G03F7/70641

    摘要： A method is used to determine focus of a lithographic apparatus used in a lithographic process on a substrate. The lithographic process is used to form at least two periodic structures on the substrate. Each structure has at least one feature that has an asymmetry between opposing side wall angles that varies as a different function of the focus of the lithographic apparatus on the substrate. A spectrum produced by directing a beam of radiation onto the at least two periodic structures is measured and ratios of the asymmetries are determined. The ratios and a relationship between the focus and the side wall asymmetry for each structure is used to determine the focus of the lithographic apparatus on the substrate.

    摘要翻译： 使用一种方法来确定在光刻工艺中使用的光刻设备在基板上的焦点。 光刻工艺用于在衬底上形成至少两个周期性结构。 每个结构具有至少一个特征，其具有相对的侧壁角度之间的不对称性，所述相对侧壁角度随着光刻设备在基底上的焦点的不同功能而变化。 测量通过将辐射束引导到至少两个周期性结构上产生的光谱，并且确定不对称性的比率。 使用每个结构的焦点和侧壁不对称之间的比率和关系来确定光刻设备在基底上的焦点。

    Inspection Method for Lithography
    6.
    发明申请
    Inspection Method for Lithography 有权
    光刻检验方法

    公开(公告)号：US20120044472A1

    公开(公告)日：2012-02-23

    申请号：US13264256

    申请日：2010-05-04

    申请人： Arie Jeffrey Den Boef ,  Hugo Augustinus Joseph Cramer ,  Paul Christiaan Hinnen

    发明人： Arie Jeffrey Den Boef ,  Hugo Augustinus Joseph Cramer ,  Paul Christiaan Hinnen

    IPC分类号： G03B27/52

    CPC分类号： G03F7/70641

    摘要： A method is used to determine focus of a lithographic apparatus used in a lithographic process on a substrate. The lithographic process is used to form at least two periodic structures on the substrate. Each structure has at least one feature that has an asymmetry between opposing side wall angles that varies as a different function of the focus of the lithographic apparatus on the substrate. A spectrum produced by directing a beam of radiation onto the at least two periodic structures is measured and ratios of the asymmetries are determined. The ratios and a relationship between the focus and the side wall asymmetry for each structure is used to determine the focus of the lithographic apparatus on the substrate.

    摘要翻译： 使用一种方法来确定在光刻工艺中使用的光刻设备在基板上的焦点。 光刻工艺用于在衬底上形成至少两个周期性结构。 每个结构具有至少一个特征，其具有相对的侧壁角度之间的不对称性，所述相对侧壁角度随着光刻设备在基底上的焦点的不同功能而变化。 测量通过将辐射束引导到至少两个周期性结构上产生的光谱，并且确定不对称性的比率。 使用每个结构的焦点和侧壁不对称之间的比率和关系来确定光刻设备在基底上的焦点。

    Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method
    9.
    发明授权
    Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method 有权
    检测方法和装置，光刻设备，光刻处理单元和器件制造方法

    公开(公告)号：US08189195B2

    公开(公告)日：2012-05-29

    申请号：US11798039

    申请日：2007-05-09

    申请人： Arie Jeffrey Den Boef ,  Hugo Augustinus Joseph Cramer ,  Mircea Dusa ,  Irwan Dani Setija

    发明人： Arie Jeffrey Den Boef ,  Hugo Augustinus Joseph Cramer ,  Mircea Dusa ,  Irwan Dani Setija

    IPC分类号： G01B11/00 ,  G01B11/14 ,  G01B11/04 ,  G01N21/00

    CPC分类号： G03F1/84 ,  G03F7/7065

    摘要： A method of measuring a property of a substrate includes generating a patterned mask configured to cause a radiation beam passing through the mask to acquire the pattern, simulating radiating the substrate with a patterned radiation beam that has been patterned using the mask to obtain a simulated pattern, determining at least one location of the simulated pattern that is prone to patterning errors, and irradiating the substrate with the patterned radiation beam using a lithographic process. The method also includes measuring an accuracy of at least one property of the at least one location of the pattern on the substrate that has been determined as being prone to patterning errors, and adjusting the lithographic process according to the measuring.

    摘要翻译： 测量衬底性质的方法包括：生成图案化掩模，其被配置为使通过掩模的辐射束获得图案，模拟使用掩模图案化的图案化辐射束来辐射衬底以获得模拟图案 ，确定易于图案化错误的模拟图案的至少一个位置，以及使用光刻工艺用图案化的辐射束照射衬底。 该方法还包括测量已经被确定为易于图案化错误的衬底上的图案的至少一个位置的至少一个特性的精度，以及根据测量来调整光刻处理。

    Methods and Scatterometers, Lithographic Systems, and Lithographic Processing Cells
    10.
    发明申请
    Methods and Scatterometers, Lithographic Systems, and Lithographic Processing Cells 有权
    方法和散射仪，平版印刷系统和平版印刷加工单元

    公开(公告)号：US20110027704A1

    公开(公告)日：2011-02-03

    申请号：US12846652

    申请日：2010-07-29

    申请人： Hugo Augustinus Joseph Cramer ,  Arie Jeffrey Den Boef ,  Henricus Johannes Lambertus Megens ,  Hendrik Jan Hidde Smilde ,  Andrianus Johannes Hendrikus Schellekens ,  Michael Kubis

    发明人： Hugo Augustinus Joseph Cramer ,  Arie Jeffrey Den Boef ,  Henricus Johannes Lambertus Megens ,  Hendrik Jan Hidde Smilde ,  Andrianus Johannes Hendrikus Schellekens ,  Michael Kubis

    IPC分类号： G03F7/20 ,  G03B27/54 ,  G06K9/00

    CPC分类号： G03F7/70641 ,  G01B11/02 ,  G01B11/22 ,  G01B11/24 ,  G01B11/30 ,  G01N21/47 ,  G01N21/88 ,  G03F7/70608 ,  G03F7/70625 ,  G03F7/70633 ,  G03F7/7065

    摘要： In a method of determining the focus of a lithographic apparatus used in a lithographic process on a substrate, the lithographic process is used to form a structure on the substrate, the structure having at least one feature which has an asymmetry in the printed profile which varies as a function of the focus of the lithographic apparatus on the substrate. A first image of the periodic structure is formed and detected while illuminating the structure with a first beam of radiation. The first image is formed using a first part of non-zero order diffracted radiation. A second image of the periodic structure is foamed and detected while illuminating the structure with a second beam of radiation. The second image is formed using a second part of the non-zero order diffracted radiation which is symmetrically opposite to the first part in a diffraction spectrum. The ratio of the intensities of the measured first and second portions of the spectra is determined and used to determine the asymmetry in the profile of the periodic structure and/or to provide an indication of the focus on the substrate. In the same instrument, an intensity variation across the detected portion is determined as a measure of process-induced variation across the structure. A region of the structure with unwanted process variation can be identified and excluded from a measurement of the structure.

    摘要翻译： 在确定在基板上的光刻工艺中使用的光刻设备的焦点的方法中，使用光刻工艺在基板上形成结构，该结构具有至少一个特征，该特征在印刷图案中具有不对称性 作为光刻设备在基板上的焦点的函数。 在用第一辐射束照射结构的同时形成和检测周期性结构的第一图像。 第一图像使用非零阶衍射辐射的第一部分形成。 周期性结构的第二图像被发泡并被检测，同时用第二辐射束照射结构。 使用在衍射光谱中与第一部分对称相对的非零级衍射辐射的第二部分形成第二图像。 确定测量的第一和第二部分光谱的强度的比率并用于确定周期性结构的轮廓的不对称性和/或提供焦点在基底上的指示。 在相同的仪器中，被检测部分的强度变化被确定为整个结构的过程引起的变化的量度。 可以从结构的测量中识别并排除具有不期望的工艺变化的结构区域。