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1.
公开(公告)号:US20080073550A1
公开(公告)日:2008-03-27
申请号:US11477335
申请日:2006-06-29
申请人: Atul Gupta , Joseph C. Olson , Gregg A. Norris
发明人: Atul Gupta , Joseph C. Olson , Gregg A. Norris
IPC分类号: G01K1/08
CPC分类号: H01J37/3171 , G01J1/04 , G01J1/0437 , G01J1/0448 , G01J1/4257 , G01J2001/4261 , H01J37/244 , H01J2237/2446 , H01J2237/24507 , H01J2237/24542 , H01J2237/24578 , H01J2237/30472 , H01J2237/31703
摘要: A beam density measurement system includes a shield, a beam sensor, and an actuator. The beam sensor is positioned downstream from the shield in a direction of travel of a beam. The beam sensor is configured to sense an intensity of the beam, and the beam sensor has a long dimension and a short dimension. The actuator translates the shield relative to the beam sensor, wherein the shield blocks at least a portion of the beam from the beam sensor as the shield is translated relative to the beam sensor, and wherein measured values of the intensity associated with changes in a position of the shield relative to the beam sensor are representative of a beam density distribution of the beam in a first direction defined by the long dimension of the beam sensor.
摘要翻译: 光束密度测量系统包括屏蔽,光束传感器和致动器。 光束传感器沿着光束的行进方向定位在屏蔽的下游。 光束传感器被配置为感测光束的强度,并且光束传感器具有长尺寸和短尺寸。 执行器相对于光束传感器平移屏蔽,其中当屏蔽件相对于光束传感器平移时,屏蔽件阻挡来自光束传感器的光束的至少一部分,并且其中与位置变化相关联的强度的测量值 屏蔽物相对于光束传感器的光束密度分布代表由光束传感器的长尺寸限定的第一方向上的光束的光束密度分布。
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公开(公告)号:US07453070B2
公开(公告)日:2008-11-18
申请号:US11477335
申请日:2006-06-29
申请人: Atul Gupta , Joseph C. Olson , Gregg A. Norris
发明人: Atul Gupta , Joseph C. Olson , Gregg A. Norris
IPC分类号: G01K1/08
CPC分类号: H01J37/3171 , G01J1/04 , G01J1/0437 , G01J1/0448 , G01J1/4257 , G01J2001/4261 , H01J37/244 , H01J2237/2446 , H01J2237/24507 , H01J2237/24542 , H01J2237/24578 , H01J2237/30472 , H01J2237/31703
摘要: A beam density measurement system includes a shield, a beam sensor, and an actuator. The beam sensor is positioned downstream from the shield in a direction of travel of a beam. The beam sensor is configured to sense an intensity of the beam, and the beam sensor has a long dimension and a short dimension. The actuator translates the shield relative to the beam sensor, wherein the shield blocks at least a portion of the beam from the beam sensor as the shield is translated relative to the beam sensor, and wherein measured values of the intensity associated with changes in a position of the shield relative to the beam sensor are representative of a beam density distribution of the beam in a first direction defined by the long dimension of the beam sensor.
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公开(公告)号:US07820985B2
公开(公告)日:2010-10-26
申请号:US12005991
申请日:2007-12-28
申请人: Atul Gupta , Joseph C. Olson
发明人: Atul Gupta , Joseph C. Olson
CPC分类号: G21K5/10 , H01L21/68764
摘要: The present invention comprises a method for high tilt angle implantation, with angular precision not previously achievable. An ion beam, having a width and height dimension, is made up of a number of individual beamlets. These beamlets typically display a higher degree of parallelism in one of these two dimensions. Thus, to minimize angular error, the workpiece is tilted about an axis substantially perpendicular to the dimension having the higher degree of parallelism. The workpiece is then implanted at a high tilt angle and rotated about a line orthogonal to the surface of the workpiece. This process can be repeated until the high tilt implantation has been performed in all required regions.
摘要翻译: 本发明包括一种用于高倾斜角度植入的方法,其角度精度以前不能实现。 具有宽度和高度尺寸的离子束由多个单独的子束组成。 这些子束通常在这两个维度之一中显示更高程度的平行度。 因此,为了最小化角度误差,工件围绕基本垂直于具有较高并行度的尺寸的轴线倾斜。 然后以高倾斜角植入工件,并围绕与工件表面正交的线旋转。 可以重复该过程,直到在所有所需区域中执行高倾斜植入。
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公开(公告)号:US20090206273A1
公开(公告)日:2009-08-20
申请号:US12031643
申请日:2008-02-14
申请人: Joseph C. Olson , Atul Gupta
发明人: Joseph C. Olson , Atul Gupta
IPC分类号: G01T1/00
CPC分类号: H01J37/3171 , H01J37/304 , H01J2237/2446 , H01J2237/24507 , H01J2237/24528 , H01J2237/24542
摘要: An apparatus and a method for detecting particle beam characteristics are disclosed. In one embodiment, the apparatus may have a body including a first end and second end and at least one detector between the first and second ends. The apparatus may have a transparent state where a portion of the particles entering the apparatus may pass through the apparatus. The apparatus may also have a minimum transparency state where substantially all of the particles entering the apparatus may be prevented from passing through the apparatus and detected. Different transparency state may be achieved by rotating the apparatus or the detector contained therein. With the apparatus, it is possible to detect the beam properties such as the beam intensity, angle, parallelism, and a distribution of the particles in a particle beam.
摘要翻译: 公开了一种用于检测粒子束特性的装置和方法。 在一个实施例中,设备可以具有包括第一端和第二端的主体以及在第一端和第二端之间的至少一个检测器。 该设备可以具有透明状态,其中进入设备的一部分颗粒可以通过设备。 该装置还可以具有最小的透明度状态,其中可以防止进入装置的基本上所有的颗粒通过装置并被检测。 可以通过旋转装置或其中包含的检测器来实现不同的透明度状态。 利用该装置,可以检测诸如光束强度,角度,平行度以及颗粒束中颗粒分布的光束特性。
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公开(公告)号:US20090166566A1
公开(公告)日:2009-07-02
申请号:US12005991
申请日:2007-12-28
申请人: Atul Gupta , Joseph C. Olson
发明人: Atul Gupta , Joseph C. Olson
IPC分类号: G21K5/04
CPC分类号: G21K5/10 , H01L21/68764
摘要: The present invention comprises a method for high tilt angle implantation, with angular precision not previously achievable. An ion beam, having a width and height dimension, is made up of a number of individual beamlets. These beamlets typically display a higher degree of parallelism in one of these two dimensions. Thus, to minimize angular error, the workpiece is tilted about an axis substantially perpendicular to the dimension having the higher degree of parallelism. The workpiece is then implanted at a high tilt angle and rotated about a line orthogonal to the surface of the workpiece. This process can be repeated until the high tilt implantation has been performed in all required regions.
摘要翻译: 本发明包括一种用于高倾斜角度植入的方法,其角度精度以前不能实现。 具有宽度和高度尺寸的离子束由多个单独的子束组成。 这些子束通常在这两个维度之一中显示更高程度的平行度。 因此,为了最小化角度误差,工件围绕基本垂直于具有较高并行度的尺寸的轴线倾斜。 然后以高倾斜角植入工件,并围绕与工件表面正交的线旋转。 可以重复该过程,直到在所有所需区域中执行高倾斜植入。
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6.
公开(公告)号:US20080096359A1
公开(公告)日:2008-04-24
申请号:US11541373
申请日:2006-09-29
申请人: Atul Gupta , Joseph C. Olson
发明人: Atul Gupta , Joseph C. Olson
IPC分类号: H01L21/66 , H01L21/336 , H01L21/425
CPC分类号: H01L22/14 , H01J37/1471 , H01J37/3171 , H01J2237/1501 , H01J2237/24528 , H01J2237/24535 , H01J2237/24578 , H01J2237/3045 , H01J2237/31703
摘要: A method includes directing an ion beam at a plurality of differing incident angles with respect to a target surface of a substrate to implant ions into a plurality of portions of the substrate, wherein each one of the plurality of differing incident angles is associated with a different one of the plurality of portions, measuring angle sensitive data from each of the plurality of portions of the substrate, and determining an angle misalignment between the target surface and the ion beam incident on the target surface from the angle sensitive data. A method of determining a substrate miscut is also provided.
摘要翻译: 一种方法包括将离子束相对于衬底的目标表面以多个不同的入射角引导,以将离子注入到衬底的多个部分中,其中多个不同入射角中的每一个与不同的入射角相关联 多个部分中的一个,测量来自基板的多个部分中的每个部分的角度敏感数据,以及从角度敏感数据确定入射到目标表面上的目标表面和离子束之间的角度偏移。 还提供了确定衬底杂交的方法。
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公开(公告)号:US08461030B2
公开(公告)日:2013-06-11
申请号:US12947078
申请日:2010-11-16
申请人: Anthony Renau , Ludovic Godet , Timothy J. Miller , Joseph C. Olson , Vikram Singh , James Buonodono , Deepak A. Ramappa , Russell J. Low , Atul Gupta , Kevin M. Daniels
发明人: Anthony Renau , Ludovic Godet , Timothy J. Miller , Joseph C. Olson , Vikram Singh , James Buonodono , Deepak A. Ramappa , Russell J. Low , Atul Gupta , Kevin M. Daniels
CPC分类号: B01J19/081 , H01J37/3171 , H01J37/32357 , H01J37/32422 , H01J37/32623 , H01J2237/0453 , H01J2237/1205 , H01L21/2236 , H01L31/022425 , H01L31/068 , H01L31/08 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要: A plasma processing apparatus comprises a plasma source configured to produce a plasma in a plasma chamber, such that the plasma contains ions for implantation into a workpiece. The apparatus also includes a focusing plate arrangement having an aperture arrangement configured to modify a shape of a plasma sheath of the plasma proximate the focusing plate such that ions exiting an aperture of the aperture arrangement define focused ions. The apparatus further includes a processing chamber containing a workpiece spaced from the focusing plate such that a stationary implant region of the focused ions at the workpiece is substantially narrower that the aperture. The apparatus is configured to create a plurality of patterned areas in the workpiece by scanning the workpiece during ion implantation.
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公开(公告)号:US07348576B2
公开(公告)日:2008-03-25
申请号:US11146064
申请日:2005-06-07
申请人: Atul Gupta , Joseph C. Olson
发明人: Atul Gupta , Joseph C. Olson
CPC分类号: H01L21/26586 , H01J37/304 , H01J37/3171 , H01J2237/24528 , H01J2237/30455 , H01J2237/30472 , H01J2237/31703 , H01L29/66803 , H01L29/785
摘要: A technique for ion beam angle process control is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for ion beam angle process control in an ion implanter system. The method may comprise directing one or more ion beams at a substrate surface. The method may also comprise determining an average spread of incident angles at which the one or more ion beams strike the substrate surface. The method may further comprise adjusting the one or more ion beams based at least in part on the average spread of incident angles to produce a desired spread of ion beam incident angles.
摘要翻译: 公开了一种用于离子束角过程控制的技术。 在一个特定的示例性实施例中,该技术可以被实现为离子注入机系统中的离子束角度过程控制的方法。 该方法可以包括在衬底表面处引导一个或多个离子束。 该方法还可以包括确定一个或多个离子束撞击衬底表面的入射角的平均扩展。 该方法还可以包括至少部分地基于入射角的平均扩展来调整一个或多个离子束,以产生期望的离子束入射角的扩展。
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公开(公告)号:US08097866B2
公开(公告)日:2012-01-17
申请号:US12031643
申请日:2008-02-14
申请人: Joseph C. Olson , Atul Gupta
发明人: Joseph C. Olson , Atul Gupta
IPC分类号: G01T1/00
CPC分类号: H01J37/3171 , H01J37/304 , H01J2237/2446 , H01J2237/24507 , H01J2237/24528 , H01J2237/24542
摘要: An apparatus and a method for detecting particle beam characteristics are disclosed. In one embodiment, the apparatus may have a body including a first end and second end and at least one detector between the first and second ends. The apparatus may have a transparent state where a portion of the particles entering the apparatus may pass through the apparatus. The apparatus may also have a minimum transparency state where substantially all of the particles entering the apparatus may be prevented from passing through the apparatus and detected. Different transparency state may be achieved by rotating the apparatus or the detector contained therein. With the apparatus, it is possible to detect the beam properties such as the beam intensity, angle, parallelism, and a distribution of the particles in a particle beam.
摘要翻译: 公开了一种用于检测粒子束特性的装置和方法。 在一个实施例中,设备可以具有包括第一端和第二端的主体以及在第一端和第二端之间的至少一个检测器。 该设备可以具有透明状态,其中进入设备的一部分颗粒可以通过设备。 该装置还可以具有最小的透明度状态,其中可以防止进入装置的基本上所有的颗粒通过装置并被检测。 可以通过旋转装置或其中包含的检测器来实现不同的透明度状态。 利用该装置,可以检测诸如光束强度,角度,平行度以及颗粒束中颗粒分布的光束特性。
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公开(公告)号:US20110124186A1
公开(公告)日:2011-05-26
申请号:US12947078
申请日:2010-11-16
申请人: Anthony Renau , Ludovic Godet , Timothy J. Miller , Joseph C. Olson , Vikram Singh , James Buonodono , Frank Sinclair , Deepak A. Ramappa , Russell Low , Atul Gupta , Kevin M. Daniels
发明人: Anthony Renau , Ludovic Godet , Timothy J. Miller , Joseph C. Olson , Vikram Singh , James Buonodono , Frank Sinclair , Deepak A. Ramappa , Russell Low , Atul Gupta , Kevin M. Daniels
IPC分类号: H01L21/265 , G21K5/10
CPC分类号: B01J19/081 , H01J37/3171 , H01J37/32357 , H01J37/32422 , H01J37/32623 , H01J2237/0453 , H01J2237/1205 , H01L21/2236 , H01L31/022425 , H01L31/068 , H01L31/08 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要: A plasma processing apparatus comprises a plasma source configured to produce a plasma in a plasma chamber, such that the plasma contains ions for implantation into a workpiece. The apparatus also includes a focusing plate arrangement having an aperture arrangement configured to modify a shape of a plasma sheath of the plasma proximate the focusing plate such that ions exiting an aperture of the aperture arrangement define focused ions. The apparatus further includes a processing chamber containing a workpiece spaced from the focusing plate such that a stationary implant region of the focused ions at the workpiece is substantially narrower that the aperture. The apparatus is configured to create a plurality of patterned areas in the workpiece by scanning the workpiece during ion implantation.
摘要翻译: 等离子体处理装置包括等离子体源,其被配置为在等离子体室中产生等离子体,使得等离子体包含用于注入工件的离子。 该装置还包括聚焦板装置,该聚焦板装置具有孔结构,其被配置为修改离开聚焦板附近的等离子体鞘的等离子体鞘的形状,使得离开孔结构的孔的离子限定聚焦离子。 该设备还包括处理室,其包含与聚焦板间隔开的工件,使得在工件处的聚焦离子的固定注入区域基本上比孔更窄。 该装置被配置为通过在离子注入期间扫描工件来在工件中产生多个图案化区域。
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