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1.Method of sputtering highly pure refractory metals in an anodically biased chamber 失效
Title translation: 在阳极偏压室中溅射高纯度难熔金属的方法公开(公告)号:US3391071A
公开(公告)日:1968-07-02
申请号:US57035166
申请日:1966-08-04
Applicant: BELL TELEPHONE LABOR INC
Inventor: THEUERER HENRY C
CPC classification number: C23C14/35 , C23C14/3464 , H01J37/34
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公开(公告)号:US2811418A
公开(公告)日:1957-10-29
申请号:US27773552
申请日:1952-03-20
Applicant: BELL TELEPHONE LABOR INC
Inventor: THEUERER HENRY C
IPC: C01G17/04
CPC classification number: C01G17/04
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公开(公告)号:US2485069A
公开(公告)日:1949-10-18
申请号:US54585444
申请日:1944-07-20
Applicant: BELL TELEPHONE LABOR INC
Inventor: SCAFF JACK H , THEUERER HENRY C
IPC: C01B33/02 , C30B9/00 , H01B3/02 , H01L21/00 , H01L21/24 , H01L21/324 , H01L23/02 , H01L23/06 , H01L23/10 , H01L29/00 , H01L29/167 , H01L29/36 , H01L29/72
CPC classification number: H01L29/36 , C01B33/02 , C30B9/00 , H01B3/02 , H01L21/00 , H01L21/24 , H01L21/324 , H01L23/02 , H01L23/06 , H01L23/10 , H01L29/00 , H01L29/167 , H01L29/72 , H01L2224/83101 , H01L2924/3011
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公开(公告)号:US3002320A
公开(公告)日:1961-10-03
申请号:US62818656
申请日:1956-12-13
Applicant: BELL TELEPHONE LABOR INC
Inventor: THEUERER HENRY C
CPC classification number: C22B5/00 , C30B13/00 , H01L29/00 , Y10S117/90
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公开(公告)号:US2871111A
公开(公告)日:1959-01-27
申请号:US69839357
申请日:1957-11-25
Applicant: BELL TELEPHONE LABOR INC
Inventor: BACON DONALD D , SCAFF JACK H , THEUERER HENRY C
IPC: C25F3/12 , H01L21/306
CPC classification number: H01L21/02052 , C25F3/12 , H01L21/30608 , Y10S438/904
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公开(公告)号:US2701326A
公开(公告)日:1955-02-01
申请号:US13603849
申请日:1949-12-30
Applicant: BELL TELEPHONE LABOR INC
Inventor: PFANN WILLIAM G , THEUERER HENRY C
CPC classification number: H01L21/00 , H01L21/185 , H01L21/187 , H01L29/00 , Y10S148/062 , Y10T428/12486 , Y10T428/12528
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公开(公告)号:US2432116A
公开(公告)日:1947-12-09
申请号:US48361643
申请日:1943-04-19
Applicant: BELL TELEPHONE LABOR INC
Inventor: MCLEAN DAVID A , THEUERER HENRY C
IPC: H01L23/16
CPC classification number: H01L23/16 , H01L24/00 , H01L2924/12037 , H01L2924/00
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公开(公告)号:US3321278A
公开(公告)日:1967-05-23
申请号:US15824661
申请日:1961-12-11
Applicant: BELL TELEPHONE LABOR INC
Inventor: THEUERER HENRY C
IPC: C01B33/06 , C23C16/448 , C23C16/52 , G05D11/03 , H01L21/205 , H01L39/00
CPC classification number: H01L21/02576 , C01B33/06 , C23C16/448 , C23C16/52 , G05D11/03 , H01L21/02381 , H01L21/02532 , H01L21/0262 , H01L39/00 , Y10S438/935
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9.Epitaxial deposition onto semiconductor wafers through an interaction between the wafers and the support material 失效
Title translation: 通过晶片和支撑材料之间的相互作用将外延沉积到半导体晶片上公开(公告)号:US3142596A
公开(公告)日:1964-07-28
申请号:US6150560
申请日:1960-10-10
Applicant: BELL TELEPHONE LABOR INC
Inventor: THEUERER HENRY C
IPC: C23C16/00 , C30B23/00 , C30B25/02 , C30B25/08 , H01C17/20 , H01L21/00 , H01L21/205 , H01L21/306
CPC classification number: H01L21/0262 , C23C16/00 , C30B23/00 , C30B25/02 , C30B25/08 , H01C17/20 , H01L21/00 , H01L21/02381 , H01L21/02395 , H01L21/02433 , H01L21/02532 , H01L21/306 , Y10S117/906 , Y10S148/052
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公开(公告)号:US2901325A
公开(公告)日:1959-08-25
申请号:US52389755
申请日:1955-07-22
Applicant: BELL TELEPHONE LABOR INC
Inventor: THEUERER HENRY C
IPC: C01B33/037 , C30B11/00 , C30B13/00
CPC classification number: C30B29/06 , C01B33/037 , C30B11/00 , C30B13/00
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