摘要:
Embodiments of the present disclosure provide an array substrate and a fabrication method thereof, and a display device. The fabrication method of the array substrate includes: forming a gate metal layer, a gate insulating layer, an active layer and a source-drain metal layer on a base substrate. The forming the gate insulating layer, the active layer and the source-drain metal layer on the base substrate comprises: forming a gate insulating film, an active layer film and a source-drain metal film on the base substrate; forming the gate insulating layer, the active layer and the source-drain metal layer by a single patterning process. The number of the exposing process is reduced, the production cycle is shortened and the fabrication cost is reduced.
摘要:
A manufacturing method of a thin film transistor and a thin film transistor are provided. In the manufacturing method, formation of pattern of a source electrode (7), a drain electrode (8) and an active layer (6) comprises: forming a semiconductor layer (10) and a conductive layer (11) that cover the whole substrate on the substrate in sequence; forming a first photoresist layer (4) at a region where the source electrode is to be formed and at a region where the drain electrode is to be formed on the conductive layer (11), respectively; forming a second photoresist layer (5) at least at a gap between the source electrode and the drain electrode that are to be formed on the conductive layer (11); conducting an etching process on the substrate with the first photoresist layer (4), the second photoresist layer (5), the semiconductor layer (10) and the conductive layer (11) formed thereon, so as to form pattern of the active layer (6), the source electrode (7) and the drain electrode (8).
摘要:
The present invention provides a mask, on which a preset pattern is provided. First test patterns for determining an amount of a position offset of the mask during its movement are provided on the mask at a first side of the preset pattern and a second side of the preset pattern opposite to the first side, respectively. When being moved in a direction from the first side to the second side by a standard distance, the mask can determine whether a position offset occurs to the mask during its movement, and determine an amount of the position offset if a position offset occurs. Thus, the position offset of the mask can be corrected, thereby obtaining an accurate predetermined pattern on a glass substrate.
摘要:
The embodiments of the present invention provide a method of fabricating an array substrate, including steps of funning a thin film transistor, a pixel electrode and a common electrode line, wherein the step of forming the thin film transistor includes steps of forming patterns of a gate, a gate insulation layer, a semiconductor layer, an etch stop layer, a source and a drain, and the gate and the common electrode line are formed in the same layer. In the method, a gate insulation film and a semiconductor film are sequentially formed, and a pattern including the semiconductor layer is formed by one patterning process; and then an etch stop film is formed, and as pattern including the gate insulation layer and the etch stop layer is formed by one patterning process.
摘要:
An array substrate and a manufacturing method thereof as well as a display panel are provided. The manufacturing method comprises: forming a pattern including a scanning line (32) and a spacer base (33) on a same layer of a substrate (31); forming a gate insulating layer (34); forming a pattern including an active layer (35), a data line, a source electrode and a drain electrode; forming a passivation layer (36); sequentially etching the passivation layer (36) and the gate insulating layer (34) through a dry etching method to form a via hole (38) exposing the spacer base (33), and inducing materials generated from an etching process in a reaction cavity to deposit on a surface of the spacer base (33) through an electric field formed by the spacer base (33) exposed in the via hole (38) and etching gas adopted in the etching process, to form a spacer (39).
摘要:
An array substrate, comprising a display region and a GOA region. In the GOA region, a gate metal electrode, a gate insulating layer, an active layer, a transition layer, and a source-drain metal electrode are formed in sequence from bottom to top, and a via hole is provided penetrating the transition layer, the active layer and the gate insulating layer, the source-drain metal electrode is electrically connected to the gate metal electrode through the via hole; and at an edge of the via hole, there is formed an angle opening upward at edges of the transition layer and the active layer. There are further disclosed a manufacturing method of the array substrate and a display device provided with the array substrate.
摘要:
The invention relates to an array substrate and a method for preparing the same, and a display device. The method for preparing an array substrate comprises steps S1) forming a pattern, which includes a gate electrode, a gate electrode insulating layer, an active layer and a source-drain electrode, on a base substrate; and S2) forming a transparent conducting layer on the base substrate on which step S1 has been accomplished, and simultaneously forming a pattern including a pixel electrode and a data line via a one-time patterning process. In this method, the steps of the manufacture process can be reduced, the production cost can be saved, and the production efficiency can be improved. Moreover, since the pixel electrode and the data line may be both formed to have a low resistance value and a high light transmission rate, the performance of the array substrate can be improved.
摘要:
The present invention provides an array substrate, a preparation method thereof and a display device. The array substrate includes at least one thin film transistor and a resin layer having at least one resin via hole, wherein a film-thickness-difference-adjusting layer used for reducing the film thickness difference at the resin via hole is arranged at the lower part of the resin layer in at least a part of the resin via hole. By providing the film-thickness-difference-adjusting layer, the film thickness difference at the resin via hole can be effectively reduced, and when a photolithographic process is performed, the difference of the thickness of the photoresist here and the thicknesses at other positions is reduced, so that the via hole fluctuation of a passivation layer caused by the larger film thickness difference at the resin via hole is improved, and the metal residue problem of the pixel electrodes is effectively avoided.
摘要:
The present invention relates to a production apparatus of display device, and provides a substrate carrying device and a substrate regularity detecting method. The carrying device comprises: a carrying platform; a support frame; a signal transmitter; a signal receiver and a control device. The benefits of the invention are that by means of adopting the signal detecting device and the control device to detect the regularity of the substrates placed in the substrate carrying device, the detection of the placement of the substrates is realized, when some problems occurs, the operators can realize in time, the happening of bump damage to the substrates in the following process when taking out is avoided, and the safety of the substrates is increased.
摘要:
Embodiments of the present invention disclose an array substrate, a manufacturing method of the array substrate and a display device, and the manufacturing method of the array substrate comprises: forming a gate line and a gate electrode on a base substrate; forming a gate insulating layer above the gate line and the gate electrode; successively depositing a semiconductor layer and a metal layer above the gate insulating layer, and forming an active layer, a source electrode and a drain electrode that are disposed above the gate electrode and a residual semiconductor layer disposed above the gate line and a signal line covering the residual semiconductor layer by using one patterning process; performing a patterning process for the signal line, the residual semiconductor layer disposed below the signal line and the gate insulating layer to form a via hole, so that a surface of the gate line, side sectional surfaces of the signal line, side sectional surfaces of the residual semiconductor layer and side sectional surfaces of the gate insulating layer are exposed through the via hole; and forming a lapping conductive layer at a position where the via hole is located, so that the signal line and the gate line are electrically connected.