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公开(公告)号：US20090039272A1
公开(公告)日：2009-02-12
申请号：US12157054
申请日：2008-06-06
IPC分类号： G01T1/24
CPC分类号： H01L27/322 , H01L33/507 , H01L51/5036 , H01L51/5262 , Y10S362/80
摘要： An optoelectronic component comprises a first electrode (3), a radiation-emitting layer sequence (1) having an active region (10) on the first electrode (3), which region has a main extension plane (E) with a surface normal (N) and emits an electromagnetic primary radiation having a non-Lambertian emission characteristic, a second electrode (4) on the radiation-emitting layer sequence (1), said second electrode being transparent to the primary radiation, and a wavelength conversion layer (2) in the beam path of the primary radiation, which converts the primary radiation at least partly into an electromagnetic secondary radiation. In this case, the first electrode (3) is reflective to the primary radiation, the non-Lambertian emission characteristic is given by an intensity I(α) of the primary radiation of the radiation-emitting layer sequence (1) as a function of an emission angle α measured with respect to the surface normal (N), the intensity I(α) increases from a α≧0° with increasing angle α up to a maximum angle αmax, and the conversion probability of the electromagnetic primary radiation in the wavelength conversion layer (2) increases as the emission angle α increases.
摘要翻译： 光电子部件包括第一电极（3），在第一电极（3）上具有有源区（10）的辐射发射层序列（1），该区域具有表面法线的主延伸面（E） N）并且发射具有非朗伯发射特性的电磁一次辐射，在辐射发射层序列（1）上的第二电极（4），所述第二电极对于一次辐射是透明的，并且波长转换层 ）在主辐射的光束路径中，其将初级辐射至少部分地转换成电磁次级辐射。 在这种情况下，第一电极（3）对初级辐射是反射的，非朗伯式发射特性由辐射发射层序列（1）的主要辐射的强度I（α）作为 相对于表面法线（N）测量的发射角α，强度I（α）从α> 0°增加，角α增加到最大角度alphamax，电磁一次辐射的转换概率 波长转换层（2）随着发射角α增加而增加。
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公开(公告)号：US07982387B2
公开(公告)日：2011-07-19
申请号：US12157054
申请日：2008-06-06
CPC分类号： H01L27/322 , H01L33/507 , H01L51/5036 , H01L51/5262 , Y10S362/80
摘要： An optoelectronic component comprises a first electrode (3), a radiation-emitting layer sequence (1) having an active region (10) on the first electrode (3), which region has a main extension plane (E) with a surface normal (N) and emits an electromagnetic primary radiation having a non-Lambertian emission characteristic, a second electrode (4) on the radiation-emitting layer sequence (1), said second electrode being transparent to the primary radiation, and a wavelength conversion layer (2) in the beam path of the primary radiation, which converts the primary radiation at least partly into an electromagnetic secondary radiation. In this case, the first electrode (3) is reflective to the primary radiation, the non-Lambertian emission characteristic is given by an intensity I(α) of the primary radiation of the radiation-emitting layer sequence (1) as a function of an emission angle α measured with respect to the surface normal (N), the intensity I(α) increases from a α≧0° with increasing angle α up to a maximum angle αmax, and the conversion probability of the electromagnetic primary radiation in the wavelength conversion layer (2) increases as the emission angle α increases.
摘要翻译： 光电子部件包括第一电极（3），在第一电极（3）上具有有源区（10）的辐射发射层序列（1），该区域具有表面法线的主延伸面（E） N）并且发射具有非朗伯发射特性的电磁一次辐射，在辐射发射层序列（1）上的第二电极（4），所述第二电极对于一次辐射是透明的，并且波长转换层 ）在主辐射的光束路径中，其将初级辐射至少部分地转换成电磁次级辐射。 在这种情况下，第一电极（3）对初级辐射是反射的，非朗伯式发射特性由辐射发射层序列（1）的主要辐射的强度I（α）作为 相对于表面法线（N）测量的发射角α，强度I（α）随着角度α增加而从α≥0°增加到最大角度αmax，并且电磁一次辐射的转换概率 波长转换层（2）随着发射角α的增加而增加。
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公开(公告)号：US20140145610A1
公开(公告)日：2014-05-29
申请号：US13820181
申请日：2011-08-24
申请人： Patrick Rode , Norwin von Malm , Lutz Höppel
发明人： Patrick Rode , Norwin von Malm , Lutz Höppel
CPC分类号： F21K9/50 , F21K9/60 , F21V7/00 , F21V23/02 , F21V23/023 , F21Y2115/10 , H01L41/107
摘要： A light-emitting diode arrangement has a frame-shaped piezo transformer having at least one output-side connection, and having a light-emitting diode module that generates electromagnetic radiation, which module is disposed within the frame-shaped piezo transformer and electrically connects to the output-side connection of the piezo transformer by at least one output-side electrical conductor, wherein radiation emitted by the light-emitting diode module in the direction of the piezo transformer is reflected, at the latter.
摘要翻译： 发光二极管装置具有至少一个输出侧连接的框形压电变压器，并且具有产生电磁辐射的发光二极管模块，该模块设置在框形压电变压器内并电连接到 通过至少一个输出侧电导体的压电变压器的输出侧连接，其中由发光二极管模块在压电变压器的方向上发射的辐射在后者处被反射。
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公开(公告)号：US08716724B2
公开(公告)日：2014-05-06
申请号：US13127328
申请日：2009-11-27
申请人： Norwin von Malm , Klaus Streubel , Patrick Rode , Karl Engl , Lutz Höppel , Jürgen Moosburger
发明人： Norwin von Malm , Klaus Streubel , Patrick Rode , Karl Engl , Lutz Höppel , Jürgen Moosburger
IPC分类号： H01L33/62
CPC分类号： H01L33/62 , H01L27/156 , H01L33/22 , H01L33/382 , H01L2924/0002 , H01L2924/00
摘要： An optoelectronic projection device which generates a predefined image during operation, including a semiconductor body having an active layer that generates electromagnetic radiation and a radiation exit side and is an imaging element of the projection device, wherein, to electrically contact the semiconductor body, a first contact layer and a second contact layer are arranged at a rear side of the semiconductor body, the rear side lying opposite the radiation exit side, and are electrically insulated from one another by a separating layer.
摘要翻译： 一种光电投影装置，其在工作期间产生预定图像，包括具有产生电磁辐射的有源层和辐射出射侧的半导体本体，并且是投影装置的成像元件，其中，与半导体本体电接触， 接触层和第二接触层设置在半导体本体的后侧，后侧与辐射出口侧相对，并且通过分离层彼此电绝缘。
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公开(公告)号：US20130328066A1
公开(公告)日：2013-12-12
申请号：US13883346
申请日：2011-11-02
申请人： Matthias Sabathil , Alexander Linkov , Christopher Kölper , Martin Strassburg , Norwin von Malm
发明人： Matthias Sabathil , Alexander Linkov , Christopher Kölper , Martin Strassburg , Norwin von Malm
IPC分类号： H01L33/02
CPC分类号： H01L33/02 , B82Y40/00 , H01L33/08 , H01L33/20 , H01L33/24 , H01L33/42 , H01L33/501 , H01L33/505 , H01L33/508 , H01L2933/0041 , H01L2933/0083
摘要： An optoelectronic semiconductor chip includes a semiconductor layer stack having an active layer that generates radiation, and a radiation emission side, and a conversion layer disposed on the radiation emission side of the semiconductor layer stack, wherein the conversion layer converts at least a portion of the radiation, which is emitted by the active layer, into radiation of a different wavelength, the radiation emission side of the semiconductor layer stack has a first nanostructuring, and the conversion layer is disposed in this first nanostructuring.
摘要翻译： 光电子半导体芯片包括具有产生辐射的有源层和辐射发射侧的半导体层堆叠和设置在半导体层堆叠的辐射发射侧的转换层，其中转换层将至少一部分 由有源层发射的辐射成为不同波长的辐射，半导体层堆叠的辐射发射侧具有第一纳米结构，并且转换层设置在该第一纳米结构中。
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公开(公告)号：US07922358B2
公开(公告)日：2011-04-12
申请号：US12240392
申请日：2008-09-29
申请人： Norwin von Malm
发明人： Norwin von Malm
IPC分类号： F21V9/00
CPC分类号： G09F21/02 , A41D13/01 , A45C15/06 , A45F3/042 , A45F2003/003 , B60Q1/2696 , B60Q1/30 , F21S43/14 , F21S43/255 , F21Y2105/00 , F21Y2115/15 , G02B5/124 , G08B5/006 , G08B7/062 , G09F9/33 , G09F13/22 , H01L27/3239 , H01L51/5234 , H01L51/5271 , H01L2251/5323 , H01L2251/5361
摘要： An illumination device (1, 1A, 1B) is disclosed. The illumination device (1, 1A, 1B) contains an organic light-emitting component (2, 2A, 2B, 2C, 2C′) containing a functional layer sequence (23, 23A) for generating light, a light passage area (7, 7A, 7B), which is provided for coupling out light emitted by the organic light-emitting component (2, 2A, 2B, 2C, 2C′) from the illumination device (1, 1A, 1B) and for coupling ambient light into the illumination device (1, 1A, 1B) a retroreflector (5, 5A, 5B), which is provided for reflecting at least part of the ambient light coupled in through the light passage area (7, 7A, 7B) back to the light passage area (7, 7A, 7B). The organic light-emitting component (2, 2A, 2B, 2C, 2C′) is embodied such that it is at least partly light-transmissive. The functional layer sequence (23, 23A) of the organic light-emitting component (2, 2A, 2B, 2C, 2C′) is arranged between the light passage area (7, 7A, 7B) and the retroreflector (5, 5A, 5B). A luminaire (10) and a display device (100) are also disclosed.
摘要翻译： 公开了一种照明装置（1,1A，1B）。 照明装置（1,1A，1B）包含含有用于产生光的功能层序列（23,23A）的有机发光部件（2,2A，2B，2C，2C'），光通过区域（7， 7A，7B），其用于将由有机发光部件（2,2A，2B，2C，2C'）发出的光从照明装置（1,1A，1B）耦合并将环境光耦合到 照明装置（1,1A，1B），后向反射器（5,5A，5B），其被设置用于将通过所述光通过区域（7,7A，7B）耦合的环境光的至少一部分反射回所述光通路 区域（7,7A，7B）。 有机发光部件（2,2A，2B，2C，2C'）被实现为至少部分透光。 有机发光部件（2,2A，2B，2C，2C'）的功能层序列（23,23A）设置在光通过区域（7,7A，7B）和后向反射器（5,5A， 5B）。 还公开了一种照明器（10）和显示装置（100）。
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7.发明申请公开(公告)号：US20090091258A1
公开(公告)日：2009-04-09
申请号：US12235121
申请日：2008-09-22
申请人： Karsten Heuser , Norwin von Malm
发明人： Karsten Heuser , Norwin von Malm
CPC分类号： H01L33/52 , H01L33/50 , H01L51/5036 , H01L51/5256 , H01L51/5268 , H01L51/5275 , H01L2251/5315 , H01L2933/0041
摘要： An optoelectronic comprises a substrate (1), a first electrode (2) on the substrate (1), a radiation-emitting layer sequence (3) having an active region (30) that emits an electromagnetic primary radiation during operation, a second electrode, which is transparent to the primary radiation, on the radiation-emitting layer sequence (3), and an encapsulation arrangement (10) deposited on the second electrode (4). The encapsulation arrangement (10) has a layer stack having at least one first barrier layer (6) and at least one first wavelength conversion layer (5) that converts the primary radiation at least partly into electromagnetic secondary radiation. The encapsulation arrangement (10) is at least partly transparent to the primary radiation and/or to the secondary radiation.
摘要翻译： 光电子包括衬底（1），衬底（1）上的第一电极（2），具有在操作期间发射电磁一次辐射的有源区（30）的辐射发射层序列（3），第二电极 ，对辐射发射层序列（3）和沉积在第二电极（4）上的封装装置（10）对初级辐射透明。 封装装置（10）具有层堆叠，其具有至少一个第一阻挡层（6）和至少一个第一波长转换层（5），其将初级辐射至少部分地转换成电磁次级辐射。 封装装置（10）对于初级辐射和/或次级辐射至少部分透明。
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公开(公告)号：US09343642B2
公开(公告)日：2016-05-17
申请号：US14009265
申请日：2012-03-28
申请人： Norwin von Malm
发明人： Norwin von Malm
IPC分类号： H01L29/06 , H01L31/00 , H01L27/15 , H01L29/26 , H01L31/12 , H01L33/00 , H01L29/207 , H01L31/0232 , H01L33/62 , H01L25/075 , H01L31/02 , H01L33/60 , H01L33/20 , H01L33/38 , H01L33/40 , H01L33/44
CPC分类号： H01L33/62 , H01L25/0753 , H01L27/153 , H01L31/02019 , H01L31/02327 , H01L33/20 , H01L33/382 , H01L33/405 , H01L33/44 , H01L33/60 , H01L2924/0002 , H01L2933/0016 , H01L2924/00
摘要： An optoelectronic semiconductor chip includes a carrier including a carrier element having a mounting side; one electrically conductive n-type wiring layer arranged at the mounting side; a structured, electrically conductive contact layer having a p-side and n-side contact region and arranged at a side of the n-type wiring layer facing away from the carrier element; at least one insulation region electrically insulating the p-side contact region from the n-side contact region; at least one electrically insulating spacer layer arranged at a side of the n-type wiring layer facing away from the carrier element in a vertical direction between the p-side contact region and the n-type wiring layer, wherein the n-side contact region and the n-type wiring layer electrically conductively connect to one another, and the p-side contact region and the spacer layer border the n-side contact region in a lateral direction; an optoelectronic structure connected to the carrier.
摘要翻译： 光电子半导体芯片包括具有安装侧的载体元件的载体; 布置在安装侧的一个导电n型布线层; 结构化的导电接触层，其具有p侧和n侧接触区域，并且布置在所述n型布线层的背离载体元件的一侧; 将所述p侧接触区域与所述n侧接触区域电绝缘的至少一个绝缘区域; 在所述p侧接触区域和所述n型布线层之间沿垂直方向布置在所述n型布线层的背离载体元件的一侧的至少一个电绝缘间隔层，其中所述n侧接触区域 并且所述n型布线层彼此导电连接，并且所述p侧接触区域和所述间隔层在横向方向上与所述n侧接触区域接合; 连接到载体的光电结构。
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公开(公告)号：US09054016B2
公开(公告)日：2015-06-09
申请号：US13123421
申请日：2009-10-29
申请人： Jürgen Moosburger , Norwin von Malm , Patrick Rode , Lutz Höppel , Karl Engl
发明人： Jürgen Moosburger , Norwin von Malm , Patrick Rode , Lutz Höppel , Karl Engl
CPC分类号： H01L27/15 , H01L25/167 , H01L33/005 , H01L33/02 , H01L33/08 , H01L33/382 , H01L33/62 , H01L2924/0002 , H01L2933/0016 , H01L2924/00
摘要： A radiation-emitting semiconductor chip includes a carrier and a semiconductor body having a semiconductor layer sequence, wherein an emission region and a protective diode region are formed in the semiconductor body having the semiconductor layer sequence; the semiconductor layer sequence includes an active region that generates radiation, the active region being arranged between a first semiconductor layer and a second semiconductor layer; the first semiconductor layer is arranged on a side of the active region which faces away from the carrier; the emission region has a recess extending through the active region; the first semiconductor layer in the emission region is electrically conductively connected to a first connection layer, wherein the first connection layer extends in the recess from the first semiconductor layer toward the carrier; and the first connection layer in the protective diode region is electrically conductively connected to the second semiconductor layer.
摘要翻译： 辐射发射半导体芯片包括具有半导体层序列的载体和半导体本体，其中在具有半导体层序列的半导体主体中形成发光区域和保护二极管区域; 所述半导体层序列包括产生辐射的有源区，所述有源区布置在第一半导体层和第二半导体层之间; 第一半导体层布置在有源区的背离载体的一侧; 发射区域具有延伸穿过有源区域的凹部; 发射区域中的第一半导体层导电地连接到第一连接层，其中第一连接层在凹部中从第一半导体层朝向载体延伸; 并且保护二极管区域中的第一连接层与第二半导体层导电连接。
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公开(公告)号：US09029878B2
公开(公告)日：2015-05-12
申请号：US13522508
申请日：2011-01-17
申请人： Matthias Sabathil , Norwin von Malm , Lutz Hoeppel , Stefan Illek , Bernd Barchmann , Patrick Rode
发明人： Matthias Sabathil , Norwin von Malm , Lutz Hoeppel , Stefan Illek , Bernd Barchmann , Patrick Rode
CPC分类号： H01L25/0753 , H01L33/22 , H01L33/507 , H01L33/58 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： A lighting device with front carrier, rear carrier and plurality of light-emitting diode chips, which when in operation emits light and releases waste heat, wherein rear carrier is covered at least in selected locations by front carrier, light-emitting diode chips are arranged between rear carrier and front carrier to form array, light-emitting diodes are contacted electrically by rear and/or front carrier and immobilized mechanically by rear carrier and front carrier, front carrier is coupled thermally conductively to light-emitting diode chips and includes light outcoupling face remote from light-emitting diode chips, which light outcoupling face releases some of waste heat released by light-emitting diode chips into surrounding environment, each light-emitting diode chip is actuated with electrical nominal power of 100 mW or less when lighting device is in operation and has light yield of 100 lm/W or more.
摘要翻译： 一种具有前载体，后载体和多个发光二极管芯片的照明装置，其在运行时发光并释放废热，其中后载体至少在前载体上被选定的位置覆盖，发光二极管芯片布置 在后载体和前载体之间形成阵列，发光二极管由后和/或前载体电接触并由后载体和前载体机械固定，前载体热传导耦合到发光二极管芯片，并且包括光输出耦合 面对远离发光二极管芯片的光输出耦合面将发光二极管芯片释放的一部分废热释放到周围环境中，当发光二极管芯片的照明装置为100mW或更小时，每个发光二极管芯片的功率为100mW 具有100 lm / W以上的光收率。
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