APPARATUS AND METHOD FOR CONTINUOUS PRODUCTION OF MATERIALS
    3.
    发明申请
    APPARATUS AND METHOD FOR CONTINUOUS PRODUCTION OF MATERIALS 有权
    用于连续生产材料的装置和方法

    公开(公告)号:US20120001356A1

    公开(公告)日:2012-01-05

    申请号:US13158142

    申请日:2011-06-10

    摘要: Embodiments of a continuous-flow injection reactor and a method for continuous material synthesis are disclosed. The reactor includes a mixing zone unit and a residence time unit removably coupled to the mixing zone unit. The mixing zone unit includes at least one top inlet, a side inlet, and a bottom inlet. An injection tube, or plurality of injection tubes, is inserted through the top inlet and extends past the side inlet while terminating above the bottom outlet. A first reactant solution flows in through the side inlet, and a second reactant solution flows in through the injection tube(s). With reference to nanoparticle synthesis, the reactant solutions combine in a mixing zone and form nucleated nanoparticles. The nucleated nanoparticles flow through the residence time unit. The residence time unit may be a single conduit, or it may include an outer housing and a plurality of inner tubes within the outer housing.

    摘要翻译: 公开了连续流动注射反应器的实施例和连续材料合成的方法。 反应器包括混合区单元和可移除地耦合到混合区单元的停留时间单元。 混合区单元包括至少一个顶部入口,侧部入口和底部入口。 注射管或多个注射管通过顶部入口插入并延伸通过侧入口,同时终止在底部出口上方。 第一反应物溶液通过侧入口流入,并且第二反应物溶液流过注射管。 关于纳米颗粒合成,反应物溶液在混合区中结合并形成有核的纳米颗粒。 有核的纳米颗粒流过停留时间单位。 停留时间单元可以是单个导管,或者它可以包括在外壳内的外壳和多个内管。

    Method and apparatus for chemical deposition
    4.
    发明授权
    Method and apparatus for chemical deposition 有权
    用于化学沉积的方法和装置

    公开(公告)号:US07846489B2

    公开(公告)日:2010-12-07

    申请号:US11490966

    申请日:2006-07-21

    申请人: Chih-hung Chang

    发明人: Chih-hung Chang

    IPC分类号: B05D5/06 B05D5/12

    摘要: Embodiments of the present system and method are useful for chemical deposition, particularly continuous deposition of thin films. Disclosed systems typically comprise a micromixer and a microchannel applicator. A deposition material or materials is applied to a substrate, such as an oxidized silicon substrate, a flexible substrate useful for forming flexible devices, such as flexible transistors, and combinations of different substrates. Uniform and highly oriented surface morphologies of films deposited using disclosed embodiments are clearly improved compared to films deposited by a conventional batch process. The process can be used to tailor the composition and morphology of the material deposited on a substrate. The present process can be used at low temperatures as a post-deposition, high-temperature annealing step is obviated.

    摘要翻译: 本发明的系统和方法的实施例可用于化学沉积,特别是薄膜的连续沉积。 公开的系统通常包括微混合器和微通道施加器。 将沉积材料或材料施加到诸如氧化硅衬底的基底,用于形成诸如柔性晶体管的柔性器件的柔性衬底以及不同衬底的组合。 使用所公开的实施例沉积的膜的均匀且高度取向的表面形态与通过常规间歇方法沉积的膜相比是明显改善的。 该方法可用于定制沉积在基底上的材料的组成和形态。 本方法可以在低温下使用,因为后期沉积可以避免高温退火步骤。

    Nanostructured anti-reflective coatings for substrates
    6.
    发明授权
    Nanostructured anti-reflective coatings for substrates 有权
    用于基材的纳米结构抗反射涂层

    公开(公告)号:US08553333B2

    公开(公告)日:2013-10-08

    申请号:US13189411

    申请日:2011-07-22

    IPC分类号: G02B27/10 B32B5/16

    摘要: Embodiments of the present system and method are useful for chemical deposition, particularly continuous deposition of anti-reflective films. Disclosed systems typically comprise a micromixer and a microchannel applicator. A deposition material or materials is applied to a substrate to form a nanostructured, anti-reflective coating. Uniform and highly oriented surface morphologies of films deposited using disclosed embodiments are clearly improved compared to films deposited by a conventional batch process. In some embodiments, a scratch-resistant, anti-reflective coating is applied to a polycarbonate substrate, such as a lens. In certain embodiments, an anti-reflective coating is applied to a surface of a solar catalytic microreactor suitable for performing endothermic reactions, where energy is provided to the reactor by absorption of solar radiation. The composition and morphology of the material deposited on a substrate can be tailored. The process can be used at low temperatures as a post-deposition, high-temperature annealing step is obviated.

    摘要翻译: 本发明的系统和方法的实施例对于化学沉积,特别是抗反射膜的连续沉积是有用的。 公开的系统通常包括微混合器和微通道施加器。 将沉积材料或材料施加到基底以形成纳米结构的抗反射涂层。 使用所公开的实施例沉积的膜的均匀且高度取向的表面形态与通过常规间歇方法沉积的膜相比显然改善。 在一些实施例中,将防刮擦的抗反射涂层施加到聚碳酸酯基底,例如透镜。 在某些实施方案中,将抗反射涂层施加到适于进行吸热反应的太阳能催化微反应器的表面,其中通过吸收太阳辐射将能量提供给反应器。 沉积在基底上的材料的组成和形态可以被定制。 该方法可以在低温下使用,因为后期沉积,高温退火步骤被消除。

    NANOSTRUCTURED ANTI-REFLECTIVE COATINGS FOR SUBSTRATES
    7.
    发明申请
    NANOSTRUCTURED ANTI-REFLECTIVE COATINGS FOR SUBSTRATES 有权
    用于基材的纳米结构抗反射涂层

    公开(公告)号:US20120176681A1

    公开(公告)日:2012-07-12

    申请号:US13189411

    申请日:2011-07-22

    摘要: Embodiments of the present system and method are useful for chemical deposition, particularly continuous deposition of anti-reflective films. Disclosed systems typically comprise a micromixer and a microchannel applicator. A deposition material or materials is applied to a substrate to form a nanostructured, anti-reflective coating. Uniform and highly oriented surface morphologies of films deposited using disclosed embodiments are clearly improved compared to films deposited by a conventional batch process. In some embodiments, a scratch-resistant, anti-reflective coating is applied to a polycarbonate substrate, such as a lens. In certain embodiments, an anti-reflective coating is applied to a surface of a solar catalytic microreactor suitable for performing endothermic reactions, where energy is provided to the reactor by absorption of solar radiation. The composition and morphology of the material deposited on a substrate can be tailored. The process can be used at low temperatures as a post-deposition, high-temperature annealing step is obviated.

    摘要翻译: 本发明的系统和方法的实施例对于化学沉积,特别是抗反射膜的连续沉积是有用的。 公开的系统通常包括微混合器和微通道施加器。 将沉积材料或材料施加到基底以形成纳米结构的抗反射涂层。 使用所公开的实施例沉积的膜的均匀且高度取向的表面形态与通过常规间歇方法沉积的膜相比显然改善。 在一些实施例中,将防刮擦的抗反射涂层施加到聚碳酸酯基底,例如透镜。 在某些实施方案中,将抗反射涂层施加到适于进行吸热反应的太阳能催化微反应器的表面,其中通过吸收太阳辐射将能量提供给反应器。 沉积在基底上的材料的组成和形态可以被定制。 该方法可以在低温下使用,因为后期沉积,高温退火步骤被消除。

    Method and apparatus for chemical deposition
    8.
    发明申请
    Method and apparatus for chemical deposition 有权
    用于化学沉积的方法和装置

    公开(公告)号:US20070020400A1

    公开(公告)日:2007-01-25

    申请号:US11490966

    申请日:2006-07-21

    申请人: Chih-hung Chang

    发明人: Chih-hung Chang

    摘要: Embodiments of the present system and method are useful for chemical deposition, particularly continuous deposition of thin films. Disclosed systems typically comprise a micromixer and a microchannel applicator. A deposition material or materials is applied to a substrate, such as an oxidized silicon substrate, a flexible substrate useful for forming flexible devices, such as flexible transistors, and combinations of different substrates. Uniform and highly oriented surface morphologies of films deposited using disclosed embodiments are clearly improved compared to films deposited by a conventional batch process. The process can be used to tailor the composition and morphology of the material deposited on a substrate. The present process can be used at low temperatures as a post-deposition, high-temperature annealing step is obviated.

    摘要翻译: 本发明的系统和方法的实施例可用于化学沉积,特别是薄膜的连续沉积。 公开的系统通常包括微混合器和微通道施加器。 将沉积材料或材料施加到诸如氧化硅衬底的基底,用于形成诸如柔性晶体管的柔性器件的柔性衬底以及不同衬底的组合。 使用所公开的实施例沉积的膜的均匀且高度取向的表面形态与通过常规间歇方法沉积的膜相比显然改善。 该方法可用于定制沉积在基底上的材料的组成和形态。 本方法可以在低温下使用,因为后期沉积可以避免高温退火步骤。

    Solution-based process for making inorganic materials
    10.
    发明授权
    Solution-based process for making inorganic materials 有权
    制备无机材料的基于溶液的工艺

    公开(公告)号:US08236599B2

    公开(公告)日:2012-08-07

    申请号:US12798755

    申请日:2010-04-09

    IPC分类号: H01L21/00

    摘要: Disclosed embodiments provide a solution-based process for producing useful materials, such as semiconductor materials. One disclosed embodiment comprises providing at least a first reactant and a second reactant in solution and applying the solution to a substrate. The as-deposited material is thermally annealed to form desired compounds. Thermal annealing may be conducted under vacuum; under an inert atmosphere; or under a reducing environment. The method may involve using metal and chalcogen precursor compounds. One example of a metal precursor compound is a metal halide. Examples of suitable chalcogen precursor compounds include a chalcogen powder, a chalcogen halide, a chalcogen oxide, a chalcogen urea, a chalcogen or dichalcogen comprising organic ligands, or combinations thereof. Certain disclosed embodiments concern a method for making a solar cell from I-III-VI semiconductors.

    摘要翻译: 公开的实施例提供了一种用于生产有用材料(例如半导体材料)的基于溶液的方法。 一个公开的实施方案包括在溶液中提供至少第一反应物和第二反应物并将溶液施加到基底。 将沉积的材料热退火以形成所需的化合物。 热退火可以在真空下进行; 在惰性气氛下 或在减少的环境下。 该方法可以涉及使用金属和硫属前体化合物。 金属前体化合物的一个实例是金属卤化物。 合适的硫族元素前体化合物的实例包括硫族元素粉末,硫族化合物卤化物,硫族元素氧化物,硫属元素尿素,含有有机配体的硫属元素或二硫原子,或其组合。 某些公开的实施例涉及从I-III-VI半导体制造太阳能电池的方法。