公开(公告)号：US20140166981A1

公开(公告)日：2014-06-19

申请号：US13719093

申请日：2012-12-18

申请人： Brian S. DOYLE ,  Roza KOTLYAR ,  Uday SHAH ,  Charles C. KUO

发明人： Brian S. DOYLE ,  Roza KOTLYAR ,  Uday SHAH ,  Charles C. KUO

IPC分类号： H01L29/06 ,  H01L21/02 ,  H01L29/66

CPC分类号： H01L29/7827 ,  B82Y10/00 ,  H01L21/0237 ,  H01L21/02636 ,  H01L29/0669 ,  H01L29/0676 ,  H01L29/16 ,  H01L29/165 ,  H01L29/42376 ,  H01L29/42392 ,  H01L29/66431 ,  H01L29/66439 ,  H01L29/66666 ,  H01L29/775 ,  Y10S977/762

摘要： Vertically oriented nanowire transistors including semiconductor layers or gate electrodes having compositions that vary over a length of the transistor. In embodiments, transistor channel regions are compositionally graded, or layered along a length of the channel to induce strain, and/or include a high mobility injection layer. In embodiments, a gate electrode stack including a plurality of gate electrode materials is deposited to modulate the gate electrode work function along the gate length.

摘要翻译： 垂直取向的纳米线晶体管包括具有在晶体管的长度上变化的组成的半导体层或栅电极。 在实施例中，晶体管沟道区域沿着沟道的长度成分地分级或分层以诱导应变，和/或包括高迁移率注入层。 在实施例中，沉积包括多个栅电极材料的栅极电极堆叠以沿着栅极长度调制栅电极功函数。

公开(公告)号：US20140177326A1

公开(公告)日：2014-06-26

申请号：US13725235

申请日：2012-12-21

申请人： Brian S. DOYLE ,  Charles C. KUO ,  David L. KENCKE ,  Roksana GOLIZADEH MOJARAD ,  Uday SHAH

发明人： Brian S. DOYLE ,  Charles C. KUO ,  David L. KENCKE ,  Roksana GOLIZADEH MOJARAD ,  Uday SHAH

IPC分类号： H01L43/02 ,  G11C11/16 ,  H01L43/12

CPC分类号： H01L43/02 ,  G11C11/155 ,  G11C11/161 ,  G11C11/1675 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

摘要： Spin transfer torque memory (STTM) devices incorporating a field plate for application of an electric field to reduce a critical current required for transfer torque induced magnetization switching. Embodiments utilize not only current-induced magnetic filed or spin transfer torque, but also electric field induced manipulation of magnetic dipole orientation to set states in a magnetic device element (e.g., to write to a memory element). An electric field generated by a voltage differential between an MTJ electrode and the field plate applies an electric field to a free magnetic layer of a magnetic tunneling junction (MTJ) to modulate one or more magnetic properties over at least a portion of the free magnetic layer.

摘要翻译： 具有用于施加电场的场板的旋转转矩存储器（STTM）装置，以减少传递转矩感应磁化切换所需的临界电流。 实施例不仅利用电流感应磁场或自旋转移转矩，还利用电场诱导的磁偶极取向的操纵来设置磁性器件元件中的状态（例如，写入存储元件）。 由MTJ电极和场板之间的电压差产生的电场向磁性隧道结（MTJ）的自由磁性层施加电场，以在至少一部分自由磁性层上调制一个或多个磁性能 。

公开(公告)号：US20190140166A1

公开(公告)日：2019-05-09

申请号：US16097801

申请日：2016-07-01

申请人： MD Tofizur RAHMAN ,  Christopher J. WIEGAND ,  Brian MAERTZ ,  Daniel G. OUELLETTE ,  Kaan OGUZ ,  Brian S. DOYLE ,  Mark L. DOCZY ,  Daniel B. BERGSTROM ,  Justin S. BROCKMAN ,  Oleg GOLONZKA ,  Tahhir GHANI ,  Intel Corporation

发明人： MD Tofizur RAHMAN ,  Christopher J. WIEGAND ,  Brian MAERTZ ,  Daniel G. OUELLETTE ,  Kevin P. O'BRIEN ,  Kaan OGUZ ,  Brian S. DOYLE ,  Mark L. DOCZY ,  Daniel B. BERGSTROM ,  Justin S. BROCKMAN ,  Oleg GOLONZKA ,  Tahir GHANI

IPC分类号： H01L43/12 ,  H01L43/10 ,  H01L43/08 ,  H01L43/02 ,  G11C11/16

CPC分类号： H01L43/12 ,  G11C11/161 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

摘要： Material layer stack structures to provide a magnetic tunnel junction (MTJ) having improved perpendicular magnetic anisotropy (PMA) characteristics. In an embodiment, a free magnetic layer of the material layer stack is disposed between a tunnel barrier layer and a cap layer of magnesium oxide (Mg). The free magnetic layer includes a Cobalt-Iron-Boron (CoFeB) body substantially comprised of a combination of Cobalt atoms, Iron atoms and Boron atoms. A first Boron mass fraction of the CoFeB body is equal to or more than 25% (e.g., equal to or more than 27%) in a first region which adjoins an interface of the free magnetic layer with the tunnel barrier layer. In another embodiment, the first Boron mass fraction is more than a second Boron mass fraction in a second region of the CoFeB body which adjoins an interface of the free magnetic layer with the cap layer.

公开(公告)号：US20170069596A1

公开(公告)日：2017-03-09

申请号：US15121759

申请日：2014-03-27

申请人： Ravi PILLARISETTY ,  Sansaptak DASGUPTA ,  Niloy MUKHERJEE ,  Brian S. DOYLE ,  Marko RADOSAVLJEVIC ,  Han Wui THEN

发明人： Ravi PILLARISETTY ,  Sansaptak DASGUPTA ,  Niloy MUKHERJEE ,  Brian S. DOYLE ,  Marko RADOSAVLJEVIC ,  Han Wui THEN

IPC分类号： H01L25/065 ,  H01L29/24 ,  H01L29/20 ,  H01L23/498 ,  H01L25/00

CPC分类号： H01L25/0652 ,  G06F1/1652 ,  G09F9/301 ,  G09G3/3648 ,  H01L21/8221 ,  H01L21/8258 ,  H01L23/145 ,  H01L23/15 ,  H01L23/49811 ,  H01L23/4985 ,  H01L25/00 ,  H01L25/50 ,  H01L27/0688 ,  H01L29/2003 ,  H01L29/24 ,  H01L2225/06527 ,  H01L2225/06555 ,  H01L2924/0002

摘要： Embodiments of the present disclosure describe multi-device flexible systems on a chip (SOCs) and methods for making such SOCs. A multi-material stack may be processed sequentially to form multiple integrated circuit (IC) devices in a single flexible SOC. By forming the IC devices from a single stack, it is possible to form contacts for multiple devices through a single metallization process and for those contacts to be located in a common back-plane of the SOC. Stack layers may be ordered and processed according to processing temperature, such that higher temperature processes are performed earlier. In this manner, intervening layers of the stack may shield some stack layers from elevated processing temperatures associated with processing upper layers of the stack. Other embodiments may be described and/or claimed.

摘要翻译： 本公开的实施例描述了芯片上的多设备灵活系统（SOC）以及用于制造这种SOC的方法。 可以依次处理多材料堆叠，以在单个柔性SOC中形成多个集成电路（IC）装置。 通过从单个堆叠形成IC器件，可以通过单个金属化工艺为多个器件形成触点，并且可以将这些触点位于SOC的公共背面中。 堆叠层可以根据处理温度进行排序和处理，使得较早进行较高温度处理。 以这种方式，堆叠的中间层可以屏蔽一些堆叠层与处理堆叠的上层相关联的升高的处理温度。 可以描述和/或要求保护其他实施例。