公开(公告)号：US20130043468A1

公开(公告)日：2013-02-21

申请号：US13588810

申请日：2012-08-17

申请人： Bunmi T. ADEKORE

发明人： Bunmi T. ADEKORE

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/7802 ,  H01L29/045 ,  H01L29/0615 ,  H01L29/0657 ,  H01L29/0847 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/22 ,  H01L29/267 ,  H01L29/66446 ,  H01L29/66454 ,  H01L29/66462 ,  H01L29/66522 ,  H01L29/66924 ,  H01L29/66969 ,  H01L29/7788 ,  H01L29/7789 ,  H01L29/7813 ,  H01L29/8083

摘要： A transistor, such as a vertical metal field effect transistor, can include a substrate including a ZnO-based material, and a structure disposed on a first side of the substrate comprising of AlGaN-based materials and electrodes disposed on the second side of the substrate. The transistor can also include a plurality of semiconductor layers and a dielectric layer disposed between the plurality of semiconductor layers and electrode materials.

摘要翻译： 诸如垂直金属场效应晶体管的晶体管可以包括包括ZnO基材料的衬底，以及设置在衬底的第一侧上的结构，该衬底包括AlGaN基材料和设置在衬底的第二面上的电极 。 晶体管还可以包括多个半导体层和设置在多个半导体层和电极材料之间的电介质层。

公开(公告)号：US20100133529A1

公开(公告)日：2010-06-03

申请号：US12563649

申请日：2009-09-21

申请人： Gianni TARASCHI ,  Bunmi T. ADEKORE ,  Jonathan PIERCE

发明人： Gianni TARASCHI ,  Bunmi T. ADEKORE ,  Jonathan PIERCE

IPC分类号： H01L33/00 ,  H01L29/12 ,  H01L21/04

CPC分类号： H01L33/0079 ,  G03B21/28 ,  H01L33/22 ,  H01L33/24 ,  H01L33/28 ,  H01L2224/13 ,  H01L2933/0091

摘要： A light-emitting device, such as a light-emitting diode (LED), is grown on a substrate including a ZnO-based material. The structure includes a plurality of semiconductor layers and an active layer disposed between the plurality of semiconductor layers. The device is removed from the substrate or the substrate is substantially thinned to improve light emission efficiency of the device.

摘要翻译： 诸如发光二极管（LED）的发光器件在包括ZnO基材料的衬底上生长。 该结构包括多个半导体层和设置在多个半导体层之间的有源层。 将器件从衬底移除，或者衬底基本上变薄以提高器件的发光效率。

公开(公告)号：US20100117070A1

公开(公告)日：2010-05-13

申请号：US12562941

申请日：2009-09-18

申请人： Bunmi T. ADEKORE ,  Jonathan PIERCE ,  George B. KENNEY ,  Gianni TARASCHI

发明人： Bunmi T. ADEKORE ,  Jonathan PIERCE ,  George B. KENNEY ,  Gianni TARASCHI

IPC分类号： H01L33/00 ,  H01L21/34

CPC分类号： H01L21/02554 ,  H01L21/0237 ,  H01L21/02403 ,  H01L21/0243 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02494 ,  H01L21/02565 ,  H01L21/02573 ,  H01L21/02587 ,  H01L21/02609 ,  H01L21/0262 ,  H01L33/22 ,  H01L33/24 ,  H01L33/28 ,  H01L33/385 ,  H01L33/405 ,  H01L33/483 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/16

摘要： A light-emitting device, such as a light-emitting diode (LED), includes a substrate including a ZnO-based material, and a structure disposed on a first side of the substrate. The structure includes a plurality of semiconductor layers and an active layer disposed between the plurality of semiconductor layers. The device further includes at least one textured light emission surface arranged to extract at least some light generated within the device.

摘要翻译： 诸如发光二极管（LED）的发光器件包括包括ZnO基材料的基板和设置在基板的第一侧上的结构。 该结构包括多个半导体层和设置在多个半导体层之间的有源层。 该装置还包括至少一个纹理光发射表面，布置成提取在该装置内产生的至少一些光。

公开(公告)号：US20100032008A1

公开(公告)日：2010-02-11

申请号：US12478626

申请日：2009-06-04

申请人： Bunmi T. ADEKORE

发明人： Bunmi T. ADEKORE

IPC分类号： H01L31/00 ,  H01B1/02 ,  B32B17/06 ,  B32B9/04 ,  C30B25/02 ,  H01L31/02 ,  H01L29/861 ,  H01L29/26 ,  H01S5/00

CPC分类号： G02B6/12004 ,  B82Y20/00 ,  H01L21/02554 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/02579 ,  H01L21/0262 ,  H01L31/0296 ,  H01L31/0687 ,  H01L31/07 ,  H01L31/0725 ,  H01L31/073 ,  H01L33/04 ,  H01L33/06 ,  H01L33/28 ,  H01L33/285 ,  H01S5/0425 ,  H01S5/183 ,  H01S5/3095 ,  H01S5/347 ,  H01S5/4093 ,  H01S5/423 ,  Y02E10/543 ,  Y02E10/544

摘要： Devices and methods of fabrication of ZnO based single and multi-junction photovoltaic cells are disclosed. ZnO based single and multijunction photovoltaic cells, and other optoelectronic devices include p-type, n-type, and undoped materials of ZnxA1-xOyB1-y, wherein the alloy composition A and B, expressed by x and y, respectively, varies between 0 and 1. Alloy element A is selected from related elements including Mg, Be, Ca, Sr, Cd, and In and alloy element B is selected from a related elements including Te and Se. The selection of A, B, x and y, allows tuning of the material's band gap. The band gap of the material may be selected to range between approximately 1.4 eV and approximately 6.0 eV. ZnxA1-xOyB1-y based tunnel diodes may be formed and employed in ZnxA1-xOyB1-y based multi-junction photovoltaic devices. ZnxA1-xOyB1-y based single and multi-junction photovoltaic devices may also include transparent, conductive heterostructures and highly doped contacts to ZnO based substrates.

摘要翻译： 公开了基于ZnO的单结和多结光伏电池的制造方法和装置。 ZnO基单结和多结光伏电池以及其他光电子器件包括ZnxAl-xOyB1-y的p型，n型和未掺杂材料，其中分别由x和y表示的合金组成A和B在0 合金元素A选自包括Mg，Be，Ca，Sr，Cd和In的相关元素，合金元素B选自包括Te和Se的相关元素。 选择A，B，x和y可以调整材料的带隙。 材料的带隙可以选择在约1.4eV和约6.0eV之间的范围内。 可以形成ZnxAl-xOyB1-y基隧道二极管，并用于基于ZnxA1-xOyB1-y的多结光伏器件。 基于ZnxAl-xOyB1-y的单结和多结光伏器件还可以包括透明导电异质结构和对ZnO基衬底的高掺杂接触。