摘要:
A TV card with power-switching function is provided. The TV card comprises a TV card chip module, a power-switching module and a connecting interface. The power switching module is connected to the TV card chip module to transfer or block a power to the TV card chip module; the connecting interface is connected to the power-switching module and a host, wherein the host provides the power to the power-switching module through the connecting interface; the connecting interface further comprises a reserved pin to receive and transfer a switching signal to the power-switching module through the connecting interface to enable the power-switching module to transfer or block the power to the TV card chip module.
摘要:
A TV card with power-switching function is provided. The TV card comprises a TV card chip module, a power-switching module and a connecting interface. The power switching module is connected to the TV card chip module to transfer or block a power to the TV card chip module; the connecting interface is connected to the power-switching module and a host, wherein the host provides the power to the power-switching module through the connecting interface; the connecting interface further comprises a reserved pin to receive and transfer a switching signal to the power-switching module through the connecting interface to enable the power-switching module to transfer or block the power to the TV card chip module.
摘要:
The present invention provides a semiconductor device and a method for fabricating the same. The semiconductor device includes a chip having an active surface and an opposing non-active surface, wherein a plurality of bond pads are formed on the active surface, and first metal layers are formed on the bond pads and to edges of the non-active surface; conductive traces disposed on the non-active surface of the chip; a dielectric layer covering sides of the chip and formed with a plurality of openings therein to expose a portion of the conductive traces; and a plurality of second metal layers formed in the openings of the dielectric layer and on the first metal layers, such that the bond pads are electrically connected to the conductive traces via the first and second metal layers.
摘要:
A semiconductor package device, a semiconductor package structure, and fabrication methods thereof are provided, which mainly includes disposing a plurality of semiconductor chips on a wafer formed with TSVs (Through Silicon Vias) and electrically connecting the semiconductor chips to the TSVs; encapsulating the semiconductor chips with an encapsulant; and disposing a hard component on the encapsulant. The hard component ensures flatness of the wafer during a solder bump process and provides support to the wafer during a singulation process such that the wafer can firmly lie on a singulation carrier, thereby overcoming the drawbacks of the prior art, namely difficulty in mounting of solder bumps, and difficulty in cutting of the wafer.
摘要:
A semiconductor package device, a semiconductor package structure, and fabrication methods thereof are provided, which mainly includes disposing a plurality of semiconductor chips on a wafer formed with TSVs (Through Silicon Vias) and electrically connecting the semiconductor chips to the TSVs; encapsulating the semiconductor chips with an encapsulant; and disposing a hard component on the encapsulant. The hard component ensures flatness of the wafer during a solder bump process and provides support to the wafer during a singulation process such that the wafer can firmly lie on a singulation carrier, thereby overcoming the drawbacks of the prior art, namely difficulty in mounting of solder bumps, and difficulty in cutting of the wafer.