公开(公告)号：US6123895A

公开(公告)日：2000-09-26

申请号：US256783

申请日：1999-02-24

申请人： Shin-ichi Yamagata ,  Osamu Suwata ,  Chihiro Kawai ,  Akira Fukui ,  Yoshinobu Takeda

发明人： Shin-ichi Yamagata ,  Osamu Suwata ,  Chihiro Kawai ,  Akira Fukui ,  Yoshinobu Takeda

IPC分类号： H05K1/05 ,  B22F1/00 ,  B22F3/10 ,  C22C29/06 ,  C22C32/00 ,  H01L23/14 ,  H01L23/15 ,  H01L23/373 ,  B22F3/24 ,  B22F3/12

CPC分类号： H01L23/142 ,  C22C29/065 ,  C22C32/0063 ,  H01L23/15 ,  H01L23/3733 ,  H01L2924/0002 ,  H05K1/05

摘要： A member for semiconductor devices comprising a composite alloy of aluminum or an aluminum alloy and silicon carbide, wherein silicon carbide grains are dispersed in aluminum or the aluminum alloy in an amount of from 10 to 70% by weight, the amount of nitrogen in the surface of the member is larger than that in the inside thereof, and the ratio of aluminum or the aluminum alloy to silicon carbide is the same in the surface and the inside. The member is produced by mixing powdery materials of aluminum or an aluminum alloy and silicon carbide, compacting the mixed powder, and sintering the compact in a non-oxidizing atmosphere containing nitrogen gas, at a temperature between 600.degree. C. and the melting point of aluminum. The member is lightweight and has high thermal conductivity as well as thermal expansion coefficient which is well matches with that of ceramics and others. Therefore, the member is especially favorable to high-power devices.

摘要翻译： 包括铝或铝合金的复合合金和碳化硅的半导体器件的构件，其中碳化硅颗粒以10至70重量％的量分散在铝或铝合金中，表面中的氮的量 的构件比其内部大，铝或铝合金与碳化硅的比例在表面和内部相同。 该构件通过混合铝或铝合金的粉末材料和碳化硅，压制混合粉末，并在含有氮气的非氧化性气氛中在600℃的温度和 铝。 该部件重量轻，导热系数高，热膨胀系数高，与陶瓷等相匹配。 因此，该会员特别有利于大功率设备。

公开(公告)号：US06280496B1

公开(公告)日：2001-08-28

申请号：US09392093

申请日：1999-09-08

申请人： Chihiro Kawai ,  Shin-ichi Yamagata ,  Akira Fukui ,  Yoshinobu Takeda

发明人： Chihiro Kawai ,  Shin-ichi Yamagata ,  Akira Fukui ,  Yoshinobu Takeda

IPC分类号： C22C2902

CPC分类号： C04B35/634 ,  B22F3/17 ,  B22F2003/1053 ,  B22F2998/10 ,  B22F2999/00 ,  B32B2311/12 ,  C04B35/565 ,  C04B35/575 ,  C04B35/581 ,  C04B35/626 ,  C04B35/62645 ,  C04B35/63 ,  C04B37/006 ,  C04B41/5155 ,  C04B2235/3895 ,  C04B2235/40 ,  C04B2235/402 ,  C04B2235/407 ,  C04B2235/5436 ,  C04B2235/604 ,  C04B2235/761 ,  C04B2235/77 ,  C04B2235/80 ,  C04B2235/9607 ,  C04B2237/123 ,  C04B2237/125 ,  C04B2237/30 ,  C04B2237/407 ,  C22C29/065 ,  C22C32/0063 ,  H01L23/3733 ,  H01L2924/0002 ,  B22F1/0096 ,  B22F3/02 ,  B22F3/1021 ,  B22F3/105 ,  B22F3/14 ,  B22F3/1035 ,  H01L2924/00

摘要： A silicon carbide based composite material includes as a first component, a metal mainly consisting of aluminum or copper, and as a second component, particles mainly consisting of silicon carbide having high purity and few defects. The material is obtained by heating a compact of the raw material powder containing the first and second components at a temperature not lower than the melting point of the metal mainly consisting of aluminum or copper, and by forging and solidifying under pressure. Preferably, the silicon carbide raw material powder is prepared to have high purity by carrying out a preliminary treatment, or the material after forging or a material obtained through a conventional infiltration process is further heated at a temperature lower than the melting point of the first component. In this manner, an improved superior thermal conductivity can be obtained.

摘要翻译： 碳化硅系复合材料作为第一成分，主要由铝或铜构成的金属，作为第二成分，主要由纯度高，缺点少的碳化硅构成的粒子。 该材料通过在不低于主要由铝或铜组成的金属的熔点的温度下加压含有第一和第二组分的原料粉末的压块，并通过在压力下锻造和固化来获得。 优选地，通过进行预处理或锻造后的材料，将碳化硅原料粉末制备成具有高纯度，或者通过常规渗透方法获得的材料在低于第一成分的熔点的温度下进一步加热 。 以这种方式，可以获得改进的优异的导热性。

公开(公告)号：US06507105B1

公开(公告)日：2003-01-14

申请号：US09498338

申请日：2000-02-04

申请人： Shin-ichi Yamagata ,  Osamu Suwata ,  Chihiro Kawai ,  Akira Fukui ,  Yoshinobu Takeda

发明人： Shin-ichi Yamagata ,  Osamu Suwata ,  Chihiro Kawai ,  Akira Fukui ,  Yoshinobu Takeda

IPC分类号： H01L2912

CPC分类号： H01L23/142 ,  C22C29/065 ,  C22C32/0063 ,  H01L23/15 ,  H01L23/3733 ,  H01L2924/0002 ,  H05K1/05 ,  H01L2924/00

摘要： A member for semiconductor devices comprising a composite alloy of aluminum or an aluminum alloy and silicon carbide, wherein silicon carbide grains are dispersed in aluminum or the aluminum alloy in an amount of from 10 to 70% by weight, the amount of nitrogen in the surface of the member is larger than that in the inside thereof, and the ratio of aluminum or the aluminum alloy to silicon carbide is the same in the surface and the inside. The member is produced by mixing powdery materials of aluminum or an aluminum alloy and silicon carbide, compacting the mixed powder, and sintering the compact in a non-oxidizing atmosphere containing nitrogen gas, at a temperature between 600° C. and the melting point of aluminum. The member is lightweight and has high thermal conductivity as well as thermal expansion coefficient which is well matches with that of ceramics and others. Therefore, the member is especially favorable to high-power devices.

摘要翻译： 包括铝或铝合金的复合合金和碳化硅的半导体器件的构件，其中碳化硅颗粒以10至70重量％的量分散在铝或铝合金中，表面中的氮的量 的构件比其内部大，铝或铝合金与碳化硅的比例在表面和内部相同。 该构件通过混合铝或铝合金的粉末材料和碳化硅，压制混合粉末，并在含有氮气的非氧化性气氛中，在600℃的温度和 铝。 该部件重量轻，导热系数高，热膨胀系数高，与陶瓷等相匹配。 因此，该会员特别有利于大功率设备。

公开(公告)号：US07392812B2

公开(公告)日：2008-07-01

申请号：US10688342

申请日：2003-10-17

申请人： Tsutomu Ohshimo ,  Akira Fukui ,  Junichi Itakura ,  Naoki Kyoya

发明人： Tsutomu Ohshimo ,  Akira Fukui ,  Junichi Itakura ,  Naoki Kyoya

IPC分类号： B08B3/00 ,  B08B7/04

CPC分类号： H01L21/67173 ,  B65G49/0481 ,  H01L21/67057 ,  H01L21/67276 ,  Y10S134/902

摘要： The invention provides a substrate processing apparatus including a processing tank for processing substrates, a transporting path provided along the processing tank, a substrate transporting device moving along the transporting path for transporting the substrates, wherein the substrate processing apparatus and the substrate transporting device mounted thereto may realize the improvement of the throughput of substrate processing without increasing the area for installing the substrate processing apparatus. There are provided at least two substrate transporting devices that are capable of moving on the identical transporting path. The movable ranges of the respective substrate transporting devices for transporting the substrates are overlapped with respect to each other. When transportation of the substrates is required simultaneously at a plurality of processing tanks in scheduling data prepared by a scheduler, the scheduling data is determined by referencing substrate transportation sharing conditions.

摘要翻译： 本发明提供了一种基板处理装置，其包括处理基板的处理槽，沿着处理槽设置的输送路径，沿着用于输送基板的输送路径移动的基板输送装置，其中，基板处理装置和安装于基板处理装置的基板输送装置 可以在不增加用于安装基板处理装置的面积的情况下实现基板处理的吞吐量的提高。 提供了能够在相同传送路径上移动的至少两个基板传送装置。 用于传送基板的各个基板传送装置的可移动范围彼此重叠。 当在调度器准备的调度数据的多个处理槽中同时需要传送基板时，通过参照基板传送共享条件来确定调度数据。

公开(公告)号：US08092914B2

公开(公告)日：2012-01-10

申请号：US11790390

申请日：2007-04-25

申请人： Masahiro Omachi ,  Akira Fukui ,  Toshiya Ikeda

发明人： Masahiro Omachi ,  Akira Fukui ,  Toshiya Ikeda

IPC分类号： B32B9/04

CPC分类号： H01L23/3731 ,  H01L23/3733 ,  H01L23/3738 ,  H01L2924/0002 ,  Y10T428/24926 ,  Y10T428/249953 ,  Y10T428/249956 ,  Y10T428/249957 ,  H01L2924/00

摘要： A heat sink substrate has a composite structure including a three-dimensional network structure of SiC ceramic having pores infiltrated with Si, and has a thermal conductivity of not less than 150 W/m·K and an oxygen content of not greater than 7 ppm. The heat sink substrate is easily allowed to have an increased surface area. Further, the heat sink substrate has a higher thermal conductivity and a coefficient thermal expansion close to that of the SiC. Therefore, the heat sink substrate is superior in the efficiency of heat conduction from a semiconductor device. The heat sink substrate is produced by infiltrating a thermally melted Si into the pores of the three-dimensional network structure in a non-oxidative atmosphere in the presence of an oxygen absorber.

摘要翻译： 散热基板具有复合结构，其包括具有Si渗入的孔的SiC陶瓷的三维网状结构，并且具有不低于150W / m·K的热导率和不大于7ppm的氧含量。 容易使散热基板具有增加的表面积。 此外，散热基板具有比SiC更高的导热性和系数热膨胀。 因此，散热基板的半导体器件的热传导效率优异。 在氧吸收剂的存在下，通过在非氧化性气氛中将热熔融的Si浸渍到三维网状结构的孔中来制造散热基板。

公开(公告)号：US20100050347A1

公开(公告)日：2010-03-04

申请号：US12461594

申请日：2009-08-18

申请人： Akira Fukui

发明人： Akira Fukui

IPC分类号： D06P5/15 ,  D06F33/00

CPC分类号： B41J15/165 ,  B41J3/4078 ,  B41J3/543 ,  B41J3/60 ,  B41J11/002

摘要： An inkjet dyeing apparatus for dyeing a belt-shape textile includes a feeding section for feeding the textile, a front surface printing section for dyeing a front surface of the textile by ink ejected thereon, a front surface drying section for drying the front surface of the textile, an inverting section for inverting and feeding the textile to a rear surface printing line, a rear surface printing section for dyeing the rear surface of the textile by ink ejected thereon, and a rear surface drying section for drying the rear surface of the textile. A transporting section is provided to transport the textile for further processing. A control unit controls ink ejection at the front and rear surface printing sections.

摘要翻译： 用于染色带状织物的喷墨染色设备包括用于供给织物的进料部分，用于喷射喷墨织物的前表面染色的前表面印刷部分，用于干燥纺织品的前表面的前表面干燥部分 纺织品，用于将纺织物反转并进给到后表面印刷线的翻转部分，用于在其上喷射墨的染色纺织品后表面的后表面印刷部分，以及用于干燥纺织品的后表面的后表面干燥部分 。 提供运送部分以运送纺织品用于进一步加工。 控制单元控制前表面和后表面印刷部分的喷墨。

公开(公告)号：US20050025654A1

公开(公告)日：2005-02-03

申请号：US10923782

申请日：2004-08-24

申请人： Shinichi Yamagata ,  Yugaku Abe ,  Makoto Imamura ,  Akira Fukui ,  Yoshishige Takano ,  Takatoshi Takikawa ,  Yoshiyuki Hirose

发明人： Shinichi Yamagata ,  Yugaku Abe ,  Makoto Imamura ,  Akira Fukui ,  Yoshishige Takano ,  Takatoshi Takikawa ,  Yoshiyuki Hirose

IPC分类号： B22F3/24 ,  C22C1/05 ,  C22C1/10 ,  C22C21/00 ,  C22C32/00 ,  C25D17/16 ,  H01L21/48 ,  H01L23/14 ,  H01L23/15 ,  B22F3/12

CPC分类号： C22C32/0063 ,  H01L21/4807 ,  H01L23/15 ,  H01L24/48 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/32188 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01012 ,  H01L2924/01019 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/09701 ,  H01L2924/12042 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/1517 ,  H01L2924/15311 ,  H01L2924/15312 ,  H01L2924/1532 ,  H01L2924/16152 ,  H01L2924/16195 ,  H01L2924/181 ,  Y10T428/24975 ,  Y10T428/25 ,  Y10T428/252 ,  Y10T428/26 ,  Y10T428/31678 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/45099 ,  H01L2224/05599 ,  H01L2224/85399

摘要： To provide a substrate material made of an aluminum/silicon carbide composite alloy which has a thermal conductivity of 100 W/m×K or higher and a thermal expansion coefficient of 20×10−6/° C. or lower and is lightweight and compositionally homogeneous. A substrate material made of an aluminum/silicon carbide composite ally which comprises Al—SiC alloy composition parts and non alloy composition part and dispersed therein from 10 to 70% by weight silicon carbide particles, and in which the fluctuations of silicon carbide concentration in the Al—SiC alloy composition parts therein are within 1% by weight. The substrate material is produced by sintering a compact of an aluminum/silicon carbide starting powder at a temperature not lower than 600° C. in a non-oxidizing atmosphere.

摘要翻译： 提供由导热率为100W / m×K以上且热膨胀系数为20×10 -6 /℃以下的铝/碳化硅复合合金制成的基材，重量轻且组成均匀。 由铝/碳化硅复合材料制成的基体材料，其包含Al-SiC合金组合物部件和非合金组成部分，并且其中分散有10至70重量％的碳化硅颗粒，并且其中碳化硅浓度的波动 其中的Al-SiC合金组成部分在1重量％以内。 基板材料通过在非氧化性气氛中在不低于600℃的温度下烧结铝/碳化硅起始粉末的压块来制造。

公开(公告)号：US4873723A

公开(公告)日：1989-10-10

申请号：US97524

申请日：1987-09-16

申请人： Kouichi Shibagaki ,  Akira Fukui

发明人： Kouichi Shibagaki ,  Akira Fukui

IPC分类号： G10L19/04 ,  G10L19/08 ,  G10L19/10

CPC分类号： G10L19/10

摘要： A multi-pulse speech coder uses synthetic filters for generating crosscorrelated signals without pitch prediction and autocorrelated signals with pitch prediction. These signals are used as a basis for calculations to detect the correlations between the signals with pitch predictions and input speech signals.

摘要翻译： 多脉冲语音编码器使用合成滤波器来产生没有音调预测的相关信号和具有音高预测的自相关信号。 这些信号用作计算的基础，以检测具有音调预测和输入语音信号的信号之间的相关性。

公开(公告)号：US4435392A

公开(公告)日：1984-03-06

申请号：US460649

申请日：1983-01-24

申请人： Masatoshi Ban ,  Kenji Miura ,  Yutaka Baba ,  Noriyuki Iwata ,  Akira Fukui ,  Mikio Hori ,  Hajime Fujimura ,  Eiichi Suenaga

发明人： Masatoshi Ban ,  Kenji Miura ,  Yutaka Baba ,  Noriyuki Iwata ,  Akira Fukui ,  Mikio Hori ,  Hajime Fujimura ,  Eiichi Suenaga

IPC分类号： A61K31/395 ,  A61P11/14 ,  A61P25/04 ,  A61P25/20 ,  A61P29/00 ,  C07D245/06 ,  A61K31/33

CPC分类号： C07D245/06 ,  Y02P20/55 ,  Y10S514/849 ,  Y10S514/916 ,  Y10S514/923

摘要： A 2,5-benzodiazocine derivative represented by a formula ##STR1## wherein R.sub.1 is phenyl or p-methoxyphenyl, R.sub.2 is hydrogen or methyl, and R.sub.3 is p-methoxyphenethyl, 3-(p-fluorobenzoyl)-propyl, cyclopropylmethyl or ##STR2## or a salt of such novel compound as well as a CNS-active pharmaceutical agent containing as an effective component at least one of said derivatives and salts.

摘要翻译： 由式（I）表示的2,5-苯并二氮辛腈衍生物，其中R1是苯基或对甲氧基苯基，R2是氢或甲基，R3是对甲氧基苯乙基，3-（对氟苯甲酰基） - 丙基，环丙基甲基 或或这种新化合物的盐以及含有至少一种所述衍生物和盐作为有效成分的CNS-活性药剂。

公开(公告)号：US20080122052A1

公开(公告)日：2008-05-29

申请号：US11795251

申请日：2006-01-11

申请人： Akira Fukui

发明人： Akira Fukui

IPC分类号： H01L23/14 ,  C22C1/05 ,  B22F3/14 ,  B22F7/04

CPC分类号： H01L23/15 ,  B22F7/04 ,  B22F2998/10 ,  B22F2999/00 ,  C22C1/1084 ,  C22C29/065 ,  C22C32/0063 ,  H01L21/563 ,  H01L23/3731 ,  H01L23/3735 ,  H01L2224/16 ,  H01L2224/73253 ,  H01L2924/01019 ,  H01L2924/01025 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/15311 ,  H01L2924/16152 ,  C22C1/051 ,  B22F3/02 ,  B22F3/14 ,  B22F3/18 ,  B22F1/0085 ,  H01L2924/00

摘要： A member for a semiconductor device of low price, capable of forming a high quality plating layer on a surface, having heat conductivity at high temperature (100° C.) of more than or equal to 180 W/m·K and toughness that will not cause breaking due to screwing, and will not cause solder breaking due to heat stress when it is bonded to other member with solder, and a production method thereof are provided. A member for a semiconductor device (1) having a coefficient of thermal expansion ranging from 6.5×10−6/K to 15×10−6/K inclusive, and heat conductivity at 100° C. of more than or equal to 180 W/m·K, has: a base material (11) formed of an aluminum-silicon carbide composite material starting from powder material in which particulate silicon carbide is dispersed in aluminum or aluminum alloy, and the content of the silicon carbide is from 30% by mass to 85% by mass inclusive; and a superficial layer (12) containing aluminum or aluminum alloy starting from a melt material bonded on top and bottom faces of the base material (11).

摘要翻译： 低成本的半导体器件的构件，能够在表面形成高品质的镀层，在高温（100℃）下具有导热系数大于或等于180W / m·K的韧性，并且不会导致 由于旋转而导致的断裂，并且当与焊料结合到其它部件时不会由于热应力而导致焊料断裂，并且提供其制造方法。 一种半导体器件（1）的元件，其热膨胀系数为6.5×10 -6 / K至15×10 -6 / K，其热传导率为100 大于或等于180W / mK，具有：由碳化硅颗粒分散在铝或铝合金中的粉末材料形成的由碳化硅 - 碳化硅复合材料形成的基材（11），并且 碳化硅的含量为30质量％〜85质量％以下; 和从基体材料（11）的顶面和底面上的熔融材料开始的含有铝或铝合金的表面层（12）。