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    Aluminum base member for semiconductor device containing a nitrogen rich surface and method for producing the same
    1.
    发明授权
    Aluminum base member for semiconductor device containing a nitrogen rich surface and method for producing the same 有权
    含有富氮表面的半导体装置用铝基材及其制造方法

    公开(公告)号：US6123895A

    公开(公告)日：2000-09-26

    申请号：US256783

    申请日：1999-02-24

    申请人： Shin-ichi Yamagata ,  Osamu Suwata ,  Chihiro Kawai ,  Akira Fukui ,  Yoshinobu Takeda

    发明人： Shin-ichi Yamagata ,  Osamu Suwata ,  Chihiro Kawai ,  Akira Fukui ,  Yoshinobu Takeda

    IPC分类号： H05K1/05 ,  B22F1/00 ,  B22F3/10 ,  C22C29/06 ,  C22C32/00 ,  H01L23/14 ,  H01L23/15 ,  H01L23/373 ,  B22F3/24 ,  B22F3/12

    CPC分类号： H01L23/142 ,  C22C29/065 ,  C22C32/0063 ,  H01L23/15 ,  H01L23/3733 ,  H01L2924/0002 ,  H05K1/05

    摘要： A member for semiconductor devices comprising a composite alloy of aluminum or an aluminum alloy and silicon carbide, wherein silicon carbide grains are dispersed in aluminum or the aluminum alloy in an amount of from 10 to 70% by weight, the amount of nitrogen in the surface of the member is larger than that in the inside thereof, and the ratio of aluminum or the aluminum alloy to silicon carbide is the same in the surface and the inside. The member is produced by mixing powdery materials of aluminum or an aluminum alloy and silicon carbide, compacting the mixed powder, and sintering the compact in a non-oxidizing atmosphere containing nitrogen gas, at a temperature between 600.degree. C. and the melting point of aluminum. The member is lightweight and has high thermal conductivity as well as thermal expansion coefficient which is well matches with that of ceramics and others. Therefore, the member is especially favorable to high-power devices.

    摘要翻译： 包括铝或铝合金的复合合金和碳化硅的半导体器件的构件，其中碳化硅颗粒以10至70重量％的量分散在铝或铝合金中，表面中的氮的量 的构件比其内部大，铝或铝合金与碳化硅的比例在表面和内部相同。 该构件通过混合铝或铝合金的粉末材料和碳化硅，压制混合粉末，并在含有氮气的非氧化性气氛中在600℃的温度和 铝。 该部件重量轻，导热系数高，热膨胀系数高，与陶瓷等相匹配。 因此，该会员特别有利于大功率设备。

    Member for semiconductor device and method for producing the same
    2.
    发明授权
    Member for semiconductor device and method for producing the same 有权
    半导体装置用部件及其制造方法

    公开(公告)号：US06507105B1

    公开(公告)日：2003-01-14

    申请号：US09498338

    申请日：2000-02-04

    申请人： Shin-ichi Yamagata ,  Osamu Suwata ,  Chihiro Kawai ,  Akira Fukui ,  Yoshinobu Takeda

    发明人： Shin-ichi Yamagata ,  Osamu Suwata ,  Chihiro Kawai ,  Akira Fukui ,  Yoshinobu Takeda

    IPC分类号： H01L2912

    CPC分类号： H01L23/142 ,  C22C29/065 ,  C22C32/0063 ,  H01L23/15 ,  H01L23/3733 ,  H01L2924/0002 ,  H05K1/05 ,  H01L2924/00

    摘要： A member for semiconductor devices comprising a composite alloy of aluminum or an aluminum alloy and silicon carbide, wherein silicon carbide grains are dispersed in aluminum or the aluminum alloy in an amount of from 10 to 70% by weight, the amount of nitrogen in the surface of the member is larger than that in the inside thereof, and the ratio of aluminum or the aluminum alloy to silicon carbide is the same in the surface and the inside. The member is produced by mixing powdery materials of aluminum or an aluminum alloy and silicon carbide, compacting the mixed powder, and sintering the compact in a non-oxidizing atmosphere containing nitrogen gas, at a temperature between 600° C. and the melting point of aluminum. The member is lightweight and has high thermal conductivity as well as thermal expansion coefficient which is well matches with that of ceramics and others. Therefore, the member is especially favorable to high-power devices.

    摘要翻译： 包括铝或铝合金的复合合金和碳化硅的半导体器件的构件，其中碳化硅颗粒以10至70重量％的量分散在铝或铝合金中，表面中的氮的量 的构件比其内部大，铝或铝合金与碳化硅的比例在表面和内部相同。 该构件通过混合铝或铝合金的粉末材料和碳化硅，压制混合粉末，并在含有氮气的非氧化性气氛中，在600℃的温度和 铝。 该部件重量轻，导热系数高，热膨胀系数高，与陶瓷等相匹配。 因此，该会员特别有利于大功率设备。

    Phosphor, Method For Producing Same, And Light-Emitting Device Using Same
    4.
    发明申请
    Phosphor, Method For Producing Same, And Light-Emitting Device Using Same 审中-公开
    荧光体及其制造方法以及使用其的发光装置

    公开(公告)号：US20080191607A1

    公开(公告)日：2008-08-14

    申请号：US11661686

    申请日：2005-08-25

    申请人： Chihiro Kawai ,  Ryuichi Inoue

    发明人： Chihiro Kawai ,  Ryuichi Inoue

    IPC分类号： H01J1/62 ,  C09K11/54

    CPC分类号： C09K11/584 ,  C09K11/54 ,  C09K11/565 ,  C09K11/586 ,  C09K11/7792 ,  H05B33/14

    摘要： A Phosphor represented by the general formula Zn(1−x)AxS:E,D is characterized by having a Blue-Cu light-emitting function. In the above general formula, A represents at least one group 2A element selected from the group consisting of Be, Mg, Ca, Sr and Ba; E represents an activator containing Cu or Ag; D represents a coactivator containing at least one element selected from group 3B and group 7B elements; and x represents a mixed crystal ratio satisfying 0≦x

    摘要翻译： 由通式Zn（1-x）A x S：E，D表示的荧光体的特征在于具有蓝-CU发光功能。 在上述通式中，A表示选自Be，Mg，Ca，Sr和Ba中的至少一种2A族元素; E表示含有Cu或Ag的活化剂; D表示含有选自3B族和7B族元素中的至少一种元素的共激活剂; x表示满足0 <= x <1的混晶比。 活化剂优选以等于或高于辅助激活剂的摩尔浓度包含以获得短波长的发射。 作为活化剂，分别使用Cu和Ag，而Ag可以与Au组合使用。

    Porous ceramic film and process for producing the same
    5.
    发明授权
    Porous ceramic film and process for producing the same 失效
    多孔陶瓷膜及其制造方法

    公开(公告)号：US5858523A

    公开(公告)日：1999-01-12

    申请号：US538738

    申请日：1995-10-03

    申请人： Chihiro Kawai ,  Takahiro Matsuura ,  Akira Yamakawa

    发明人： Chihiro Kawai ,  Takahiro Matsuura ,  Akira Yamakawa

    IPC分类号： B01D71/02 ,  B01D39/20 ,  B01J35/04 ,  C04B38/00 ,  C04B41/45 ,  C04B41/52 ,  C04B41/81 ,  C04B41/85 ,  C04B41/89 ,  B32B29/02

    CPC分类号： C04B41/009 ,  B01D39/2075 ,  B01D39/2086 ,  C04B41/4582 ,  C04B41/52 ,  C04B41/81 ,  C04B41/89 ,  C04B2111/00793 ,  Y10T428/249969 ,  Y10T428/24997 ,  Y10T428/24999 ,  Y10T428/252 ,  Y10T428/259 ,  Y10T442/69 ,  Y10T442/691

    摘要： A porous ceramic film which is formed onto and bonded to an oxide layer provided on the surface of a porous base, the film composed of finely deposited particles comprising at least one compound including (a) at least one selected from the group consisting of Si, B and Al or the group consisting of the metals of the Groups IVa, Va and VIa and (b) at least one selected from the group consisting of C and N in which the particles are intertwined with each other and bonded to each other through the component of the oxide layer to form a three-dimensionally intertwined structure. This porous ceramic film is produced by forming the oxide layer on the base surface and then heating it to a temperature of at least of the liquid-phase formation temperature of the oxide layer in a gaseous atmosphere containing the above elements (a) and (b). The porous ceramic film has a high porosity, a good pressure resistance and a regulated pore size and is appropriate for a filter, a catalyst support, bioreactor or a structural material.

    摘要翻译： 一种多孔陶瓷膜，其形成在多孔基材的表面上并与其结合的氧化物层上，所述多孔陶瓷膜由精细沉积的颗粒构成，所述微粒包含至少一种化合物，所述至少一种化合物包括（a）选自Si， B和Al或由IVa，Va和VIa族金属组成的组，和（b）选自C和N中的至少一种，其中颗粒彼此缠结并通过 氧化物层的组分以形成三维缠结的结构。 该多孔陶瓷膜通过在基体表面上形成氧化物层，然后在含有上述元素（a）和（b）的气体气氛中将其加热至至少氧化物层的液相形成温度的温度 ）。 多孔陶瓷膜具有高孔隙率，良好的耐压性和调节的孔径，适用于过滤器，催化剂载体，生物反应器或结构材料。

    High-strength porous silicon nitride body and process for producing the same
    6.
    发明授权
    High-strength porous silicon nitride body and process for producing the same 失效
    高强度多孔氮化硅体及其制造方法

    公开(公告)号：US5780374A

    公开(公告)日：1998-07-14

    申请号：US774612

    申请日：1996-12-30

    申请人： Chihiro Kawai ,  Takahiro Matsuura ,  Akira Yamakawa

    发明人： Chihiro Kawai ,  Takahiro Matsuura ,  Akira Yamakawa

    IPC分类号： C04B35/584 ,  C04B38/00 ,  C04B38/06

    CPC分类号： C04B38/00 ,  C04B38/06

    摘要： A high-porosity and high-strength porous silicon nitride body comprises columnar silicon nitride grains and an oxide bond phase containing 2 to 15 wt. %, in terms of oxide based on silicon nitride, of at least one rare earth element, and has an SiO.sub.2 /(SiO.sub.2 +rare earth element oxide) weight ratio of 0.012 to 0.65 and an average pore size of at most 3.5 .mu.m. The porous silicon nitride body is produced by compacting comprising a silicon nitride powder, 2 to 15 wt. %, in terms of oxide based on silicon nitride, of at least one rare earth element, and an organic binder while controlling the oxygen content and carbon content of said compact; and sintering said compact in an atmosphere comprising nitrogen at 1,650.degree. to 2,200.degree. C. to obtain a porous body having a three-dimensionally entangled structure made up of columnar silicon nitride grains and an oxide bond phase, and having an SiO.sub.2 /(SiO.sub.2 +rare earth element oxide) weight ratio of 0.012 to 0.65.

    摘要翻译： 高孔隙率和高强度多孔氮化硅体包括柱状氮化硅颗粒和含有2至15wt。 至少一种稀土元素为基于氮化硅的氧化物的％，SiO 2 /（SiO 2 +稀土元素氧化物）的重量比为0.012〜0.65，平均孔径为3.5μm以下。 多孔氮化硅体通过压制而制成，其包含氮化硅粉末，2〜15重量％ ％，基于氮化硅的氧化物，至少一种稀土元素和有机粘合剂，同时控制所述成型体的氧含量和碳含量; 并在包含氮气的气氛中在1650℃-2200℃下烧结所述成型体，得到由柱状氮化硅晶粒和氧化物结合相构成的三维缠结结构的多孔体，并具有SiO 2 /（SiO 2 + 稀土元素氧化物）重量比为0.012〜0.65。

    Porous semiconductor and process for producing the same
    8.
    发明申请
    Porous semiconductor and process for producing the same 失效

    公开(公告)号：US20050042743A1

    公开(公告)日：2005-02-24

    申请号：US10500975

    申请日：2003-07-10

    申请人： Chihiro Kawai ,  Masami Tatsumi

    发明人： Chihiro Kawai ,  Masami Tatsumi

    IPC分类号： A61L9/16 ,  A61L9/20 ,  B01J35/00 ,  C02F1/32 ,  C02F1/72 ,  C09K11/02 ,  C09K11/08 ,  C09K11/54 ,  C09K11/59 ,  C09K11/62 ,  C09K11/64 ,  C09K11/65 ,  C09K11/67 ,  C09K11/77 ,  H01L33/16 ,  H01L33/18 ,  H01L35/24 ,  C12M1/34

    CPC分类号： H01L33/16 ,  A61L9/16 ,  A61L9/205 ,  B01J35/004 ,  C02F1/001 ,  C02F1/32 ,  C02F1/725 ,  C02F2101/30 ,  C02F2303/04 ,  C09K11/02 ,  C09K11/0883 ,  C09K11/54 ,  C09K11/59 ,  C09K11/62 ,  C09K11/64 ,  C09K11/65 ,  C09K11/672 ,  C09K11/77 ,  C09K11/7704 ,  C09K11/7766 ,  C09K11/7783 ,  H01L33/18 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The present invention provides a filter with which organic matter, bacteria, viruses, and other harmful substances can be trapped, and the trapped material can be sterilized and decomposed, at low cost and extremely high efficiency. A porous ceramic or metal is used as a substrate, and a porous semiconductor composed of a semiconductor material having a light emitting function is formed in the interior or on the surface of this substrate. An electrode is provided to this product to serve as a filter, voltage is applied so that ultraviolet light is emitted while a fluid is being filtered, and any harmful substances are filtered and simultaneously sterilized and decomposed. The porous semiconductor layer is preferably composed of columns grown perpendicular to the substrate plane, and has the function of emitting ultraviolet light with a wavelength of 400 nm or less. The pores in the porous substrate column are through-holes perpendicular to the substrate plane, and the average size of these pores is preferably from 0.1 to 100 μm. The distal ends of the columns preferably have a pointed shape. To manufacture, a suspension of semiconductor particles having a light emitting function is filtered through the porous substrate serving as a filter medium so as to form a deposited layer of semiconductor particles on the porous substrate surface. A deposited layer of p-type semiconductor particles and a deposited layer of n-type semiconductor particles may also be formed so that these form a pn junction. Further, the present invention is characterized in that an insulating layer is formed on the top and bottom surfaces of the porous semiconductor layer, and semiconductor particles are dispersed in the insulating layer, with the bandgap of the semiconductor particles in the porous light emitting layer or the porous semiconductor layer being at least 3.2 eV, and being doped with gadolinium, which is the light emitting center. In addition, the porous semiconductor layer may be made of porous silicon nitride composed of columnar Si3N4 particles with an average aspect ratio of at least 3 and an oxide-based binder phase containing at least one of rare earth element, and emit visible light or ultraviolet light.

    Ceramics porous body and method of preparing the same
    9.
    发明授权
    Ceramics porous body and method of preparing the same 失效
    陶瓷多孔体及其制备方法

    公开(公告)号：US5618765A

    公开(公告)日：1997-04-08

    申请号：US367220

    申请日：1995-01-06

    申请人： Hisao Takeuchi ,  Seiji Nakahata ,  Takahiro Matsuura ,  Chihiro Kawai

    发明人： Hisao Takeuchi ,  Seiji Nakahata ,  Takahiro Matsuura ,  Chihiro Kawai

    IPC分类号： B01D39/20 ,  C04B38/00 ,  C04B35/58

    CPC分类号： C04B38/00 ,  B01D39/2075

    摘要： A ceramics porous body having a high porosity as well as high strength is especially suitable for use as a filter for removing foreign matter from a fluid or as a catalytic carrier. The porous body has a porosity of at least 30% and comprises columnar ceramic grains having an aspect ratio of at least 3. In particular, the porous body comprises Si.sub.3 N.sub.4 grains, of which at least 60% are hexagonal columnar beta-Si.sub.3 N.sub.4 grains. The porous body further comprises at least one compound of a rare earth element in an amount of at least 1 vol.% and not more than 20 vol.% of an oxide of the rare earth element, and optionally at least one compound of elements of the groups IIa and IIIb of the periodic table and transition metal elements in an amount of not more than 5 vol.% of an oxide of each element. A compact of mixed powder obtained by adding the compound powder of the rare earth element to silicon nitride powder is heat treated in a nitrogen atmosphere at a temperature of at least 1500.degree. C., to prepare the silicon nitride ceramic porous body.

    摘要翻译： PCT No.PCT / JP94 / 00803 Sec。 371 1995年1月6日第 102（e）1995年1月6日PCT PCT 1994年5月19日PCT公布。 第WO94 / 27929号公报 日期1994年12月8日具有高孔隙率和高强度的陶瓷多孔体特别适合用作从流体或催化载体中除去异物的过滤器。 多孔体具有至少30％的孔隙率，并且包括纵横比至少为3的柱状陶瓷颗粒。特别地，多孔体包括Si 3 N 4晶粒，其中至少60％是六边形柱状β-Si 3 N 4晶粒。 所述多孔体还包含稀土元素的至少一种化合物，其量为所述稀土元素的氧化物的至少1体积％且不超过20体积％，以及任选的至少一种化合物 周期表的IIa和IIIb族和过渡金属元素的量不超过每种元素氧化物的5体积％。 在氮气氛下，在至少1500℃的温度下，将稀土元素的复合粉末添加到氮化硅粉末中而获得的混合粉末的压块进行热处理，制备氮化硅陶瓷多孔体。

    Phosphor, Method for Manufacturing Same, and Particle Dispersed El Device Using Same
    10.
    发明申请
    Phosphor, Method for Manufacturing Same, and Particle Dispersed El Device Using Same 审中-公开
    荧光体，其制造方法以及使用其的粒子分散El装置

    公开(公告)号：US20080057343A1

    公开(公告)日：2008-03-06

    申请号：US11630572

    申请日：2005-06-14

    申请人： Chihiro Kawai ,  Ryuichi Inoue

    发明人： Chihiro Kawai ,  Ryuichi Inoue

    IPC分类号： C09K11/08 ,  B05D3/02 ,  C09K11/54 ,  C09K11/56 ,  C09K11/77

    CPC分类号： B82Y30/00 ,  B82Y10/00

    摘要： An EL phosphor contains a conductor phase including carbon nanotubes, carbon nanohorns, or another carbon component. The phosphor includes a sulfide that has Ag— or Cu-activated ZnS as a main component thereof. The phosphor includes material expressed by the general formula Zn(1−x)AxS:Ag/Cu, D (where A is at least one type of group 2A element selected from the group consisting of Be, Mg, Ca, Sr, and Ba; D is a coactivator and is at least one element selected from the group consisting of group 3B or group 7B elements; and 0≦x

    摘要翻译： EL荧光体含有包含碳纳米管，碳纳米角或其他碳成分的导体相。 荧光体包括具有Ag-或Cu-活化的ZnS作为其主要成分的硫化物。 荧光体包括由通式Zn（1-x）A S x S：Ag / Cu，D表示的材料（其中A是选自由Be组成的组中的至少一种2A族元素 ，Mg，Ca，Sr和Ba; D是共激活剂，并且是选自由3B族或7B族元素组成的组中的至少一种元素;以及0 <= x <1），或包含BNO的无定形氮氧化物荧光体， 由Eu 2+激活的Si-ON，Al-ON，Ga-ON，Al-Ga-ON，In-Ga-ON或In-Al-ON， 3 +，Yb + 2 +，或另一种土金属离子。