公开(公告)号：US07192645B2

公开(公告)日：2007-03-20

申请号：US10207652

申请日：2002-07-29

Applicant: Chung J. Lee ,  Atul Kumar

Inventor： Chung J. Lee ,  Atul Kumar

IPC: B32B27/28

CPC classification number: H01L23/5329 ,  B01J19/123 ,  B01J19/1887 ,  B01J2219/00153 ,  B01J2219/00159 ,  B01J2219/0879 ,  B05D1/007 ,  B05D1/60 ,  B05D3/0254 ,  B05D3/061 ,  B05D3/062 ,  B29C71/02 ,  B29C2071/022 ,  B29C2071/025 ,  B29C2071/027 ,  C08G61/02 ,  C08G61/025 ,  C08G2261/3424 ,  C08J5/18 ,  C08J2365/04 ,  C08L65/00 ,  C08L65/04 ,  C23C16/452 ,  F28D17/005 ,  H01L21/0212 ,  H01L21/02203 ,  H01L21/02263 ,  H01L21/312 ,  H01L21/3127 ,  H01L23/53238 ,  H01L2924/0002 ,  Y10T428/31504 ,  Y10T428/3154 ,  Y10T428/31855 ,  H01L2924/00

Abstract: Methods and products of Transport co-polymerization (“TCP”) that are useful for preparations of low Dielectric Constant (“ε”) thin films are disclosed. Transport co-polymerization (“TCP”) of reactive intermediates that are generated from a first precursor with a general structural formula (Z)m—Ar—(CX′X″Y)n (VI) with a second reactive intermediate that is generated from a cage compound (e.g. Fullerenes, Methylsilsesquioxane, Hydrosilsesquioxane, and Adamantanyl) or a cyclic-compounds (e.g. Cyclo-Siloxanes and 2,2-Paracyclophanes) results in co-polymer films that are useful for making porous low ε (≦2.0) thin films. The porous thin films of this invention consist of nano-pores with uniform pore distribution thus retain high rigidity thus are suitable for manufacturing of future ICs using copper as conductor. Preparation methods and stabilization processes for low k co-polymers that consist of sp2C—Z and HC-sp3Cα—X bonds are also revealed. A preparation method is achieved by controlling the substrate temperature and feed rate of the major precursors. One stabilization process includes a post annealing of as-deposited co-polymer films under the presence of hydrogen under high temperatures. The reductive annealing of these films is conducted at temperatures from −20° C. to −50° C. to +20° C. to +50° C. of their Reversible Crystal Transformation (“CRT”) temperatures, then quenching the resulting films to −20° C. to −50° C. below their “CRT” temperatures. The reductive annealing is conducted before the as-deposited film was removed from a deposition system and still under the vacuum. “Re-stabilization” processes of co-polymer surfaces that are exposed to reactive plasma etching are also disclosed; thus, further coating by barrier metal, cap layer or etch-stop layer can be safely applied.

公开(公告)号：US07549905B2

公开(公告)日：2009-06-23

申请号：US11239988

申请日：2005-09-30

Applicant: Chung J. Lee ,  Atul Kumar ,  Chieh Chen ,  George Tzeng

Inventor： Chung J. Lee ,  Atul Kumar ,  Chieh Chen ,  George Tzeng

IPC: H01J9/00

CPC classification number: H01L51/5253

Abstract: A method of forming an organic light emitting device on a substrate is provided, wherein the method includes forming an active device structure on the substrate, adhering a mask to the substrate, wherein the mask covers an electrical contact portion of the substrate while exposing the active device structure, forming an encapsulant layer over the active device structure and the mask, forming a separation between a portion of the encapsulant layer that covers the active device structure and a portion of the encapsulant layer that covers the mask, and removing the mask from the substrate.

Abstract translation: 提供一种在衬底上形成有机发光器件的方法，其中该方法包括在衬底上形成有源器件结构，将掩模粘贴到衬底上，其中掩模覆盖衬底的电接触部分，同时暴露活性物质 在活性器件结构和掩模上形成密封剂层，在覆盖有源器件结构的封装剂层的一部分和覆盖掩模的封装剂层的一部分之间形成间隔， 基质。

公开(公告)号：US07309395B2

公开(公告)日：2007-12-18

申请号：US10816179

申请日：2004-03-31

Applicant: Chung J. Lee ,  Atul Kumar ,  Chieh Chen ,  Yuri Pikovsky

Inventor： Chung J. Lee ,  Atul Kumar ,  Chieh Chen ,  Yuri Pikovsky

IPC: C23C16/52 ,  C23C16/04 ,  C23C16/22 ,  C23C16/452 ,  C23C16/48 ,  C23F1/00 ,  H01L21/306

CPC classification number: H01L21/0212 ,  B05D1/185 ,  B05D1/60 ,  B05D3/065 ,  B05D3/067 ,  B05D7/52 ,  H01L21/02263 ,  H01L21/02304 ,  H01L21/02337 ,  H01L21/02362 ,  H01L21/3121 ,  H01L21/3127

Abstract: A system for depositing a composite polymer dielectric film on a substrate is disclosed, wherein the composite polymer dielectric film includes a low dielectric constant polymer layer disposed between a first silane-containing layer and a second silane-containing layer. The system includes a process module having a processing chamber and a monomer delivery system configured to admit a gas-phase monomer into the processing chamber for deposition of the low dielectric constant polymer layer, a post-treatment module for annealing the composite polymer dielectric film, and a silane delivery system configured to admit a vapor flow containing a silane precursor into at least one of the process module and the post-treatment module for the formation of the first silane-containing layer and the silane-containing layer.

Abstract translation: 公开了一种用于在基板上沉积复合聚合物电介质膜的系统，其中复合聚合物电介质膜包括设置在第一含硅烷层和第二含硅烷层之间的低介电常数聚合物层。 该系统包括具有处理室和单体输送系统的处理模块，该单体输送系统构造成将气相单体进入处理室以沉积低介电常数聚合物层，用于退火复合聚合物电介质膜的后处理模块， 以及硅烷输送系统，其被构造成允许含有硅烷前体的蒸汽流进入至少一个工艺模块和后处理模块中，用于形成第一含硅烷层和含硅烷层。

公开(公告)号：US07621794B2

公开(公告)日：2009-11-24

申请号：US11271410

申请日：2005-11-09

Applicant: Chung J. Lee ,  Atul Kumar ,  Chieh Chen

Inventor： Chung J. Lee ,  Atul Kumar ,  Chieh Chen

IPC: H05B33/10 ,  H01L51/56 ,  G02F1/335 ,  C03B27/00

CPC classification number: H01L51/5256 ,  Y10T428/1082 ,  Y10T428/2852

Abstract: A method of encapsulating an organic light-emitting device is disclosed, wherein the device includes a light-emitting portion and an electrical contact portion, the method including forming a polymer layer over the light-emitting portion and the electrical contact portion of the device; forming a separation in the polymer layer between a portion of the polymer layer disposed over the light-emitting portion of the device and a portion of the polymer layer disposed over the electrical contact portion of the device; adhering a film removal structure to the portion of the polymer layer disposed over the electrical contact portion of the device; and removing the film removal structure, thereby causing the removal of the portion of the polymer layer disposed over the electrical contact portion of the device.

Abstract translation: 公开了一种封装有机发光器件的方法，其中该器件包括发光部分和电接触部分，该方法包括在器件的发光部分和电接触部分上形成聚合物层; 在所述聚合物层的设置在所述器件的发光部分之上的部分和设置在所述器件的电接触部分之上的聚合物层的一部分之间的聚合物层中形成分离; 将膜去除结构粘附到设置在所述器件的电接触部分上方的聚合物层的部分; 并去除膜去除结构，从而导致去除设置在器件的电接触部分上的聚合物层的部分。

公开(公告)号：US20080213579A1

公开(公告)日：2008-09-04

申请号：US12075995

申请日：2008-03-14

Applicant: Chung J. Lee ,  Chieh Chen ,  Atul Kumar

Inventor： Chung J. Lee ,  Chieh Chen ,  Atul Kumar

IPC: C09K11/00 ,  B32B27/06 ,  B32B9/04 ,  B05D5/12

CPC classification number: B05D1/60 ,  B05D3/0254 ,  B29C71/02 ,  B29C2071/022 ,  B29C2071/025 ,  B29C2071/027 ,  C08G61/02 ,  C08G61/025 ,  C08G2261/3424 ,  C08J5/18 ,  H01L21/0212 ,  H01L21/02271 ,  H01L21/31058 ,  H01L21/3127 ,  Y10T428/269 ,  Y10T428/3154 ,  Y10T428/31544 ,  Y10T428/31855

Abstract: In an organic light emitting device package including a plurality of layers of materials formed on a substrate the plurality of layers of materials including an organic light emitting layer a protective barrier for protecting the organic light emitting device from environmental degradation the protective barrier comprising a first semi-crystalline parylene-based layer an inorganic barrier layer and a second semi-crystalline parylene-based layer.

Abstract translation: 在包括形成在基板上的多层材料的有机发光器件封装中，包括有机发光层的多层材料是用于保护有机发光器件免受环境恶化的保护屏障，该保护屏障包括第一半 结晶聚对二甲苯基层为无机阻挡层和第二半结晶聚对二甲苯基层。

公开(公告)号：US07094661B2

公开(公告)日：2006-08-22

申请号：US10815994

申请日：2004-03-31

Applicant: Chung J. Lee ,  Atul Kumar

Inventor： Chung J. Lee ,  Atul Kumar

IPC: H01L21/76

CPC classification number: H01L21/76825 ,  H01L21/76807 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76832

Abstract: A method of forming an electrically conductive element in an integrated circuit is disclosed. The method includes depositing a composite polymer dielectric film onto a silicon-containing substrate, wherein the composite polymer dielectric film includes a silane-containing adhesion promoter layer formed on the silicon-containing substrate, and a low dielectric constant polymer layer formed on the adhesion promoter layer, depositing a silane-containing hard mask layer onto the composite polymer dielectric film, exposing the adhesion promoter layer and the hard mask layer to a free radical-generating energy source to chemically bond the adhesion promoter layer to the underlying silicon-containing substrate and to the low dielectric constant polymer layer, and to chemically bond the composite polymer dielectric film to the hard mask layer, etching an etched feature in the hard mask layer and the composite polymer dielectric film, and depositing an electrically conductive material in the etched feature.

Abstract translation: 公开了一种在集成电路中形成导电元件的方法。 该方法包括将复合聚合物电介质膜沉积到含硅衬底上，其中复合聚合物电介质膜包括在含硅衬底上形成的含硅烷的粘合促进剂层，以及形成在粘合促进剂上的低介电常数聚合物层 将含硅烷的硬掩模层沉积到复合聚合物电介质膜上，将粘附促进剂层和硬掩模层暴露于自由基产生能量源以将粘附促进剂层化学键合到下面的含硅基材上;以及 到低介电常数聚合物层，并且将复合聚合物电介质膜化学键合到硬掩模层，蚀刻硬掩模层和复合聚合物电介质膜中的蚀刻特征，以及在蚀刻特征中沉积导电材料。

公开(公告)号：US07364925B2

公开(公告)日：2008-04-29

申请号：US11009285

申请日：2004-12-08

Applicant: Chung J. Lee ,  Chieh Chen ,  Atul Kumar

Inventor： Chung J. Lee ,  Chieh Chen ,  Atul Kumar

IPC: H01L21/00

CPC classification number: B05D1/60 ,  B05D3/0254 ,  B29C71/02 ,  B29C2071/022 ,  B29C2071/025 ,  B29C2071/027 ,  C08G61/02 ,  C08G61/025 ,  C08G2261/3424 ,  C08J5/18 ,  H01L21/0212 ,  H01L21/02271 ,  H01L21/31058 ,  H01L21/3127 ,  Y10T428/269 ,  Y10T428/3154 ,  Y10T428/31544 ,  Y10T428/31855

Abstract: A method of forming a protective barrier in an organic light emitting device is disclosed, wherein the organic light emitting device is formed on a substrate and includes a plurality of layers of materials, the plurality of layers of materials including an organic light emitting layer. The method includes forming an inorganic layer and a semi-crystalline parylene-based polymer layer over an underlying layer, wherein the semi-crystalline parylene-based polymer layer is formed via transport polymerization of a reactive intermediate species. Organic light emitting devices having barriers are also disclosed.

Abstract translation: 公开了一种在有机发光器件中形成保护屏障的方法，其中所述有机发光器件形成在衬底上，并且包括多层材料，所述多层材料包括有机发光层。 该方法包括在下层上形成无机层和半结晶聚对二甲苯基聚合物层，其中通过反应性中间体物质的转移聚合形成半结晶聚对二甲苯基聚合物层。 还公开了具有屏障的有机发光器件。

公开(公告)号：US06881447B2

公开(公告)日：2005-04-19

申请号：US10116724

申请日：2002-04-04

Applicant: Chung J. Lee ,  Atul Kumar

Inventor： Chung J. Lee ,  Atul Kumar

IPC: B05D3/02 ,  B05D7/24 ,  B29C71/02 ,  C08G61/02 ,  C08J5/18 ,  H01L21/312 ,  C23C16/56

CPC classification number: B05D1/60 ,  B05D3/0254 ,  B29C71/02 ,  B29C2071/022 ,  B29C2071/025 ,  B29C2071/027 ,  C08G61/02 ,  C08G61/025 ,  C08G2261/3424 ,  C08J5/18 ,  H01L21/0212 ,  H01L21/02271 ,  H01L21/31058 ,  H01L21/3127 ,  Y10T428/269 ,  Y10T428/3154 ,  Y10T428/31544 ,  Y10T428/31855

Abstract: Preparation methods and stabilization processes for low k polymers that consist of sp2C—X and HC-sp3Cα—X bonds. A preparation method is achieved by controlling the substrate temperature and feed rate of the polymer precursors. One stabilization process includes a post annealing of as-deposited polymer films under the presence of hydrogen under high temperatures. The reductive annealing of these films is conducted at temperatures from −20° C. to −50° C. to +20° C. to +50° C. of their Reversible Crystal Transformation (“CRT”) temperatures, then quenching the resulting films to −20° C. to −50° C. below their “CRT” temperatures. The reductive annealing is conducted before the as-deposited film was removed from a deposition system and still under the vacuum. “Re-stabilization” processes of polymer surfaces that are exposed to reactive plasma etching are also disclosed; thus, further coating by barrier metal, cap layer or etch-stop layer can be safely applied.

Abstract translation: 由k-S-X和HC-sp-3-α-X键组成的低k聚合物的制备方法和稳定化方法。 通过控制聚合物前体的基板温度和进料速率来实现制备方法。 一种稳定化方法包括在氢气存在下在高温下对沉积的聚合物膜进行后退火。 这些膜的还原退火在其可逆晶体转变（“CRT”）温度的-20℃至-50℃至+ 20℃至+ 50℃的温度下进行，然后淬灭所得 在-20℃至-50℃的温度下低于它们的“CRT”温度。 还原退火在沉积膜从沉积系统中移除之前仍然在真空下进行。 还公开了暴露于反应性等离子体蚀刻的聚合物表面的“再稳定化”工艺; 因此，可以安全地施加通过阻挡金属，盖层或蚀刻停止层的进一步涂覆。

公开(公告)号：US07425346B2

公开(公告)日：2008-09-16

申请号：US10936156

申请日：2004-09-07

Applicant: Chieh Chen ,  Atul Kumar ,  Yuri Pikovsky ,  Chung J. Lee

Inventor： Chieh Chen ,  Atul Kumar ,  Yuri Pikovsky ,  Chung J. Lee

IPC: B05D5/12 ,  C23C16/18

CPC classification number: H01L21/02271 ,  H01L21/02118 ,  H01L21/0212 ,  H01L21/02123 ,  H01L21/02126 ,  H01L21/02131 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/312 ,  H01L21/316 ,  H01L21/76808 ,  H01L21/76811 ,  H01L21/76835 ,  Y10T29/41

Abstract: A method of forming a hybrid inorganic/organic dielectric layer on a substrate for use in an integrated circuit is provided, wherein the method includes forming a first dielectric layer on the substrate via chemical vapor deposition, and forming a second dielectric layer on the first dielectric layer via chemical vapor deposition, wherein one of the first dielectric layer and the second dielectric layer is formed from an organic dielectric material, and wherein the other of the first dielectric layer and the second dielectric layer is formed from an inorganic dielectric material.

Abstract translation: 提供了一种在用于集成电路的衬底上形成杂化无机/有机电介质层的方法，其中所述方法包括通过化学气相沉积在衬底上形成第一电介质层，并在第一电介质上形成第二电介质层 层，其中所述第一介电层和所述第二介电层中的一个由有机介电材料形成，并且其中所述第一介电层和所述第二介电层中的另一个由无机介电材料形成。

公开(公告)号：US07238626B2

公开(公告)日：2007-07-03

申请号：US11020422

申请日：2004-12-21

Applicant: Chung J. Lee ,  Atul Kumar

Inventor： Chung J. Lee ,  Atul Kumar

IPC: H01L21/31

CPC classification number: B05D1/60 ,  B05D3/0254 ,  B29C71/02 ,  B29C2071/022 ,  B29C2071/025 ,  B29C2071/027 ,  C08G61/02 ,  C08G61/025 ,  C08G2261/3424 ,  C08J5/18 ,  H01L21/0212 ,  H01L21/02271 ,  H01L21/31058 ,  H01L21/3127 ,  Y10T428/269 ,  Y10T428/3154 ,  Y10T428/31544 ,  Y10T428/31855

Abstract: A method of stabilizing a poly(paraxylylene) dielectric thin film after forming the dielectric thin film via transport polymerization is disclosed, wherein the method includes annealing the dielectric thin film under at least one of a reductive atmosphere and a vacuum at a temperature above a reversible solid phase transition temperature of the dielectric film to convert the film from a lower temperature phase to a higher temperature phase, and cooling the dielectric thin film at a sufficient rate to a temperature below the solid phase transition temperature of the dielectric thin film to trap substantial portions of the film in the higher temperature phase.

Abstract translation: 公开了一种在通过传输聚合形成电介质薄膜之后稳定聚（对二甲苯）电介质薄膜的方法，其中该方法包括在至少一种还原性气氛和真空中在高于可逆的温度下退火介电薄膜 电介质膜的固相转变温度，以将膜从较低温度相转变为较高温度相，并将电介质薄膜以足够的速率冷却至低于介电薄膜的固相转变温度的温度，以捕获相当大的 在较高温度阶段的薄膜部分。