公开(公告)号：US20140053648A1

公开(公告)日：2014-02-27

申请号：US14068057

申请日：2013-10-31

Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA ,  DENSO CORPORATION

Inventor： Tameharu OHTA ,  Tetsuo FUJII ,  Masanobu AZUKAWA ,  Takeshi ITO ,  Itaru ISHII

IPC: G01C19/56 ,  H05K13/00

CPC classification number: G01C19/56 ,  B81B7/0058 ,  B81B2201/0235 ,  B81B2201/0285 ,  G01D18/00 ,  G01P15/08 ,  H01L2224/48247 ,  H05K13/00 ,  Y10T29/49002 ,  Y10T29/49117 ,  Y10T29/49826

Abstract: A physical quantity sensor includes a sensor portion, a casing, and a vibration isolator. The casing includes a supporting portion with a supporting surface that is located to face an end surface of the sensor portion. The vibration isolator is located between the end surface of the sensor portion and the supporting surface of the casing to join the sensor portion to the casing. The vibration isolator reduces a relative vibration between the sensor portion and the casing.

Abstract translation: 物理量传感器包括传感器部分，壳体和隔振器。 壳体包括具有支撑表面的支撑部分，支撑表面位于传感器部分的端表面上。 隔振器位于传感器部分的端面和壳体的支撑表面之间，以将传感器部分接合到壳体。 隔振器减小传感器部分和壳体之间的相对振动。

公开(公告)号：US20130178008A1

公开(公告)日：2013-07-11

申请号：US13748734

申请日：2013-01-24

Applicant: DENSO CORPORATION

Inventor： Kazuhiko SUGIURA ,  Tetsuo FUJII ,  Hisanori YOKURA

IPC: B81C1/00

CPC classification number: B81C1/00134 ,  B81B2207/095 ,  B81C1/00269 ,  B81C1/00301 ,  H01L2224/48463 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/30105

Abstract: A semiconductor device includes a sensor portion, a cap portion, and an ion-implanted layer. The sensor portion has a sensor structure at a surface portion of a surface. The cap portion has first and second surfaces opposite to each other and includes a through electrode. The surface of the sensor portion is joined to the first surface of the cap portion such that the sensor structure is sealed between the sensor portion and the cap portion. The ion-implanted layer is located on the second surface of the cap portion. The through electrode extends from the first surface to the second surface and is exposed through the ion-implanted layer.

Abstract translation: 半导体器件包括传感器部分，帽部分和离子注入层。 传感器部分在表面的表面部分具有传感器结构。 盖部具有彼此相对的第一和第二表面，并且包括通孔。 传感器部分的表面与盖部分的第一表面接合，使得传感器结构被密封在传感器部分和盖部分之间。 离子注入层位于帽部的第二表面上。 通孔从第一表面延伸到第二表面，并通过离子注入层暴露。

公开(公告)号：US20140084437A1

公开(公告)日：2014-03-27

申请号：US14091507

申请日：2013-11-27

Applicant: DENSO CORPORATION

Inventor： Masao YAMADA ,  Tetsuo FUJII

IPC: H01L23/495

CPC classification number: H01L23/49575 ,  H01L23/49589 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/48091 ,  H01L2224/48195 ,  H01L2224/48247 ,  H01L2224/484 ,  H01L2224/4911 ,  H01L2224/49171 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/05599

Abstract: A semiconductor device includes a lead frame, a semiconductor chip, a substrate, a plurality of chip parts, a plurality of wires, and a resin member. The lead frame includes a chip mounted section and a plurality of lead sections. The semiconductor chip is mounted on the chip mounted section. The substrate is mounted on the chip mounted section. The chip parts are mounted on the substrate. Each of the chip parts has a first end portion and a second end portion in one direction, and each of the chip parts has a first electrode at the first end portion and a second electrode at the second end portion. Each of the wires couples the second electrode of one of the chip parts and one of the lead sections. The resin member covers the lead frame, the semiconductor chip, the substrate, the chip parts, and the wires.

Abstract translation: 半导体器件包括引线框架，半导体芯片，基板，多个芯片部件，多个导线以及树脂部件。 引线框架包括芯片安装部分和多个引线部分。 半导体芯片安装在芯片安装部分上。 基板安装在芯片安装部分上。 芯片部件安装在基板上。 每个芯片部件在一个方向上具有第一端部部分和第二端部部分，并且每个芯片部分在第一端部具有第一电极，在第二端部具有第二电极。 每个电线将芯片部件之一的第二电极和引线部分中的一个耦合。 树脂构件覆盖引线框架，半导体芯片，基板，芯片部件和电线。

公开(公告)号：US20140048922A1

公开(公告)日：2014-02-20

申请号：US14059662

申请日：2013-10-22

Applicant: DENSO CORPORATION

Inventor： Masaya TANAKA ,  Tetsuo FUJII

IPC: H01L23/498 ,  H01L21/768

CPC classification number: H01L23/498 ,  B81B7/007 ,  B81B2201/0235 ,  B81B2207/095 ,  B81C2203/0118 ,  H01L21/768 ,  H01L21/7682 ,  H01L21/76898 ,  H01L21/84 ,  H01L24/03 ,  H01L24/05 ,  H01L24/48 ,  H01L27/1203 ,  H01L2224/04042 ,  H01L2224/05171 ,  H01L2224/05184 ,  H01L2224/05556 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/05669 ,  H01L2224/4845 ,  H01L2224/48463 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01055 ,  H01L2924/01058 ,  H01L2924/01072 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12036 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/16235 ,  H01L2924/00 ,  H01L2224/45099

Abstract: A semiconductor device includes a base substrate made of silicon, a cap substrate and a leading electrode having a metal part. The base substrate has base semiconductor regions being insulated and separated from each other at a predetermined portion of a surface layer thereof. The cap substrate is bonded to the predetermined portion of the surface layer of the base substrate. The leading electrode has a first end connected to one of the plurality of base semiconductor regions of the base substrate Wand extends through the cap substrate such that a second end of the leading electrode is located adjacent to a surface of the cap substrate for allowing an electrical connection with an external part, the surface being opposite to a bonding surface at which the base substrate and the cap substrate are bonded. The leading electrode defines a groove between an outer surface thereof and the cap substrate.

Abstract translation: 半导体器件包括由硅制成的基底衬底，帽基底和具有金属部分的引导电极。 基底基板具有在其表面层的预定部分彼此绝缘和分离的基底半导体区域。 盖基板结合到基底基板的表面层的预定部分。 引导电极具有连接到基底基板的多个基底半导体区域中的一个的第一端，并且穿过盖衬底延伸，使得引导电极的第二端邻近盖衬底的表面定位，以允许电气 与外部部分的连接，该表面与基底基底和盖基底接合的接合表面相对。 引导电极在其外表面和盖基板之间限定凹槽。

公开(公告)号：US20130098155A1

公开(公告)日：2013-04-25

申请号：US13711911

申请日：2012-12-12

Applicant: Denso Corporation ,  Toyota Jidosha Kabushiki Kaisha

Inventor： Tameharu OHTA ,  Tetsuo FUJII ,  Masanobu AZUKAWA ,  Takeshi ITO ,  Itaru ISHII

IPC: G01P15/08 ,  H05K13/00

CPC classification number: G01C19/56 ,  B81B7/0058 ,  B81B2201/0235 ,  B81B2201/0285 ,  G01D18/00 ,  G01P15/08 ,  H01L2224/48247 ,  H05K13/00 ,  Y10T29/49002 ,  Y10T29/49117 ,  Y10T29/49826

Abstract: A physical quantity sensor includes a sensor portion, a casing, and a vibration isolator. The casing includes a supporting portion with a supporting surface that is located to face an end surface of the sensor portion. The vibration isolator is located between the end surface of the sensor portion and the supporting surface of the casing to join the sensor portion to the casing. The vibration isolator reduces a relative vibration between the sensor portion and the casing.

Abstract translation: 物理量传感器包括传感器部分，壳体和隔振器。 壳体包括具有支撑表面的支撑部分，支撑表面位于传感器部分的端表面上。 隔振器位于传感器部分的端面和壳体的支撑表面之间，以将传感器部分接合到壳体。 隔振器减小传感器部分和壳体之间的相对振动。

公开(公告)号：US20150041850A1

公开(公告)日：2015-02-12

申请号：US14513685

申请日：2014-10-14

Applicant: DENSO CORPORATION

Inventor： Hirotaka SAIKAKU ,  Tsuyoshi YAMAMOTO ,  Shoji MIZUNO ,  Masakiyo SUMITOMO ,  Tetsuo FUJII ,  Jun SAKAKIBARA ,  Hitoshi YAMAGUCHI ,  Yoshiyuki HATTORI ,  Rie TAGUCHI ,  Makoto KUWAHARA

IPC: H01L27/06 ,  H01L29/10 ,  H01L29/78 ,  H01L29/423 ,  H01L29/739

CPC classification number: H01L29/7813 ,  H01L27/0629 ,  H01L27/0635 ,  H01L29/0634 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/4238 ,  H01L29/4983 ,  H01L29/66734 ,  H01L29/7391 ,  H01L29/7393 ,  H01L29/7397 ,  H01L29/7398 ,  H01L29/7805 ,  H01L29/7819 ,  H01L29/7825 ,  H01L29/7831 ,  H01L29/861 ,  H01L2924/0002 ,  H02M7/003 ,  H01L2924/00

Abstract: A semiconductor device includes a switching element having: a drift layer; a base region; an element-side first impurity region in the base region; an element-side gate electrode sandwiched between the first impurity region and the drift layer; a second impurity region contacting the drift layer; an element-side first electrode coupled with the element-side first impurity region and the base region; and an element-side second electrode coupled with the second impurity region, and a FWD having: a first conductive layer; a second conductive layer; a diode-side first electrode coupled to the second conductive layer; a diode-side second electrode coupled to the first conductive layer; a diode-side first impurity region in the second conductive layer; and a diode-side gate electrode in the second conductive layer sandwiched between first impurity region and the first conductive layer and having a first gate electrode as an excess carrier injection suppression gate.

Abstract translation: 一种半导体器件包括：具有漂移层的开关元件; 基地区 在基极区域中的元件侧第一杂质区域; 夹在所述第一杂质区域和所述漂移层之间的元件侧栅电极; 接触漂移层的第二杂质区; 与元件侧第一杂质区域和基极区域耦合的元件侧第一电极; 以及与所述第二杂质区域耦合的元件侧第二电极以及具有：第一导电层的FWD; 第二导电层; 耦合到所述第二导电层的二极管侧第一电极; 耦合到所述第一导电层的二极管侧第二电极; 第二导电层中的二极管侧第一杂质区; 以及夹在第一杂质区域和第一导电层之间的第二导电层中的二极管侧栅电极，并具有作为过剩载流子注入抑制栅极的第一栅极电极。