Abstract:
An underfill material enabling voidless packaging and excellent solder bonding properties, and a method for manufacturing a semiconductor device using the same are provided. An underfill material is used which contains an epoxy resin and a curing agent, and a time for a reaction rate to reach 20% at 240° C. calculated by Ozawa method using a differential scanning calorimeter is 2.0 sec or less and a time for the reaction rate to reach 60% is 3.0 sec or more. This enables voidless packaging and excellent solder connection properties.
Abstract:
A protective tape and a method for manufacturing a semiconductor device using the same capable of achieving excellent connection properties. The protective tape includes an adhesive layer, a thermoplastic resin layer and a backing material film in that order; a modulus ratio of a shear storage modulus of the adhesive layer to a shear storage modulus of the thermoplastic resin layer at an application temperature at which the protective tape is applied is 0.01 or less. This suppresses resin residue on bumps thereby achieving excellent connection properties.
Abstract:
An underfill material enabling voidless packaging and excellent solder bonding properties, and a method for manufacturing a semiconductor device using the same are provided. An underfill material is used which contains an epoxy resin and a curing agent, and a time for a reaction rate to reach 20% at 240° C. calculated by Ozawa method using a differential scanning calorimeter is 2.0 sec or less and a time for the reaction rate to reach 60% is 3.0 sec or more. This enables voidless packaging and excellent solder connection properties.
Abstract:
A protective tape including an adhesive agent layer, a thermoplastic resin layer, and a matrix film layer in this order to a surface of a wafer on which a bump electrode is formed; grinding a surface of the wafer opposite to the surface on which the protective tape is pasted; pasting an adhesive tape to the ground surface of the wafer; peeling the protective tape so that the adhesive agent layer remains and other layers are removed; dicing the wafer to which the adhesive tape is pasted to obtain individual semiconductor chips; and curing the adhesive agent layer before dicing; the adhesive agent layer after curing has a shear storage modulus of 3.0E+08 Pa to 5.0E+09 Pa, and the ratio of the thickness of the adhesive agent layer of the protective tape before pasting to the height of the bump electrode is 1/30 to ⅙.
Abstract:
A protective tape that improves solder bonding properties and reduces wafer warping. The protective tape includes, in the following order, an adhesive agent layer, a first thermoplastic resin layer, a second thermoplastic resin layer, and a matrix film layer. The protective tape satisfies the conditions expressed by the following formulae (1) to (3): Ga>Gb (1) Ta
Abstract:
An underfill material achieving a wide margin for mounting and a method for manufacturing a semiconductor device using the same are provided. The underfill material contains an epoxy resin, an acid anhydride, an acrylic resin, and an organic peroxide, wherein a minimum melt viscosity attainment temperature and a minimum melt viscosity obtained when melt viscosity of the underfill material is measured under a temperature increase rate condition in a range of 5 to 50° C./min are in a range of 100° C. to 150° C. and in a range of 100 to 5000 Pa·s, respectively. Since variation in the minimum melt viscosity attainment temperature measured under different temperature increase conditions is small, voidless mounting and good solder bonding properties can be achieved without strict control on the temperature profile during thermocompression bonding, and a wide margin for mounting can be achieved.