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    SPECTRAL LIGHT SPLITTING MODULE AND PHOTOVOLTAIC SYSTEM
    2.
    发明申请
    SPECTRAL LIGHT SPLITTING MODULE AND PHOTOVOLTAIC SYSTEM 审中-公开
    光谱分光模块和光伏系统

    公开(公告)号：US20170012157A1

    公开(公告)日：2017-01-12

    申请号：US15107315

    申请日：2014-12-22

    Applicant: DOW GLOBAL TECHNOLOGIES LLC ,  CALIFORNIAINSTITUTE OF TECHNOLOGY

    Inventor： Carissa Eisler ,  Weijun Zhou ,  Emily D. Kosten ,  Emily C. Warmann ,  Carrie E. Hofmann ,  Harry A. Atwater ,  Rebekah K. Feist ,  James C. Stevens

    IPC: H01L31/054 ,  H01L31/05

    CPC classification number: H01L31/0547 ,  H01L31/0504 ,  H01L31/0543 ,  H01L31/0549 ,  Y02E10/52

    Abstract: A light splitting optical module that converts incident light into electrical energy, the module including a solid optical element comprising an input end for receiving light, a first side, and a second side spaced from the first side, a first solar cell adjacent to the first side of the solid optical element, and a second solar cell adjacent to the second side of the solid optical element. The first solar cell is positioned to absorb a first subset of incident light and reflect a first remainder of the incident light to the second solar cell through the solid optical element, wherein the first solar cell has a lower band gap than the second cell.

    Abstract translation: 一种将入射光转换成电能的分光光学模块，该模块包括一个固体光学元件，该固体光学元件包括一个用于接收光的输入端，一个第一侧和与该第一侧隔开的第二侧，与第一个相邻的第一个太阳能电池 固体光学元件的一侧，以及与固体光学元件的第二侧相邻的第二太阳能电池。 第一太阳能电池被定位成吸收入射光的第一子集，并且通过固体光学元件将入射光的第一剩余部分反射到第二太阳能电池，其中第一太阳能电池具有比第二电池低的带隙。

    PHOTOVOLTAIC DEVICES INCORPORATING THIN CHALCOGENIDE FILM ELECTRICALLY INTERPOSED BETWEEN PNICTIDE-CONTAINING ABSORBER LAYER AND EMITTER LAYER
    6.
    发明申请
    PHOTOVOLTAIC DEVICES INCORPORATING THIN CHALCOGENIDE FILM ELECTRICALLY INTERPOSED BETWEEN PNICTIDE-CONTAINING ABSORBER LAYER AND EMITTER LAYER 审中-公开
    包含含PNICTIDE的吸收层和发射层之间的电化学膜的薄膜电容器的光伏器件

    公开(公告)号：US20150255637A1

    公开(公告)日：2015-09-10

    申请号：US14433221

    申请日：2013-10-07

    Applicant: DOW GLOBAL TECHNOLOGIES LLC ,  CALIFORNIA INSTITUTE OF TECHNOLOGY

    Inventor： Jeffrey P. Bosco ,  Rebekah K. Feist ,  Harry A. Atwater ,  Marty W. Degroot ,  James C. Stevens ,  Gregory M. Kimball

    IPC: H01L31/0296 ,  H01L31/032 ,  H01L31/18 ,  H01L31/072

    CPC classification number: H01L31/0296 ,  H01L31/032 ,  H01L31/062 ,  H01L31/07 ,  H01L31/072 ,  H01L31/1085 ,  H01L31/109 ,  H01L31/1828 ,  Y02E10/50

    Abstract: The present invention provides strategies for improving the quality of the insulating layer in MIS and SIS devices in which the insulator layer interfaces with at least one pnictide-containing film The principles of the present invention are based at least in part on the discovery that very thin (20 nm or less) insulating films comprising a chalcogenide such as i-ZnS are surprisingly superior tunnel barriers in MIS and SIS devices incorporating pnictide semiconductors. In one aspect, the present invention relates to a photovoltaic device, comprising: a semiconductor region comprising at least one pnictide semiconductor; an insulating region electrically coupled to the semiconductor region, wherein the insulating region comprises at least one chalcogenide and has a thickness in the range from 0.5 nm to 20 nm; and a rectifying region electrically coupled to the semiconductor region in a manner such that the insulating region is electrically interposed between the collector region and the semiconductor region.

    Abstract translation: 本发明提供了改善MIS和SIS器件中的绝缘层的质量的策略，其中绝缘体层与至少一个含有pnictide的膜相接触。本发明的原理至少部分地基于以下发现：非常薄 （20nm以下）包含硫族化物如i-ZnS的绝缘膜在MIS和SIS器件中具有令人惊奇的优越的隧道势垒，其包含pnictide半导体。 一方面，本发明涉及一种光伏器件，包括：包含至少一个半导体的半导体区域; 绝缘区域，其电耦合到所述半导体区域，其中所述绝缘区域包括至少一个硫族化物，并且具有在0.5nm至20nm范围内的厚度; 以及整流区域，其以这样的方式电耦合到所述半导体区域，使得所述绝缘区域电插入在所述集电极区域和所述半导体区域之间。

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