摘要:
An injection seeded modular gas discharge laser system capable of producing high quality pulsed laser beams at pulse rates of about 4,000 Hz or greater and at pulse energies of about 5 mJ or greater. Two separate discharge chambers are provided, one of which is a part of a master oscillator producing a very narrow band seed beam which is amplified in the second discharge chamber. The chambers can be controlled separately permitting separate optimization of wavelength parameters in the master oscillator and optimization of pulse energy parameters in the amplifying chamber. A preferred embodiment in a F2 laser system configured as a MOPA and specifically designed for use as a light source for integrated circuit lithography. In the preferred MOPA embodiment, each chamber comprises a single tangential fan providing sufficient gas flow to permit operation at pulse rates of 4000 Hz or greater by clearing debris from the discharge region in less time than the approximately 0.25 milliseconds between pulses. The master oscillator is equipped with a line selection package for selecting the strongest F2 spectral line.
摘要翻译:一种注射种子模块化气体放电激光系统,其能够以约4,000Hz或更大的脉冲速率和约5mJ或更大的脉冲能量产生高质量的脉冲激光束。 提供两个单独的放电室,其中之一是主振荡器的一部分,其产生在第二放电室中放大的非常窄的带状晶体束。 可以单独控制室,允许主振荡器中的波长参数的单独优化和放大室中的脉冲能量参数的优化。 配置为MOPA并被专门设计用作集成电路光刻的光源的F 2 N 2激光系统中的优选实施例。 在优选的MOPA实施例中,每个腔室包括单个切向风扇,其通过在比脉冲之间的大约0.25毫秒更短的时间内清除来自放电区域的碎屑来提供足够的气流以允许以4000Hz或更高的脉冲速率操作。 主振荡器配备有用于选择最强的F 2/2谱线的线选择包。
摘要:
An injection seeded modular gas discharge laser system capable of producing high quality pulsed laser beams at pulse rates of about 4,000 Hz or greater and at pulse energies of about 5 mJ or greater. Two separate discharge chambers are provided, one of which is a part of a master oscillator producing a very narrow band seed beam which is amplified in the second discharge chamber. The chambers can be controlled separately permitting separate optimization of wavelength parameters in the master oscillator and optimization of pulse energy parameters in the amplifying chamber. A preferred embodiment in a F2 laser system configured as a MOPA and specifically designed for use as a light source for integrated circuit lithography. In the preferred MOPA embodiment, each chamber comprises a single tangential fan providing sufficient gas flow to permit operation at pulse rates of 4000 Hz or greater by clearing debris from the discharge region in less time than the approximately 0.25 milliseconds between pulses. The master oscillator is equipped with a line selection package for selecting the strongest F2 spectral line.
摘要翻译:一种注射种子模块化气体放电激光系统,其能够以约4,000Hz或更大的脉冲速率和约5mJ或更大的脉冲能量产生高质量的脉冲激光束。 提供两个单独的放电室,其中之一是主振荡器的一部分,其产生在第二放电室中放大的非常窄的带状晶体束。 可以单独控制室,允许主振荡器中的波长参数的单独优化和放大室中的脉冲能量参数的优化。 配置为MOPA并被专门设计用作集成电路光刻的光源的F 2 N 2激光系统中的优选实施例。 在优选的MOPA实施例中,每个腔室包括单个切向风扇,其通过在比脉冲之间的大约0.25毫秒更短的时间内清除来自放电区域的碎屑来提供足够的气流以允许以4000Hz或更高的脉冲速率操作。 主振荡器配备有用于选择最强的F 2/2谱线的线选择包。
摘要:
An injection seeded modular gas discharge laser system capable of producing high quality pulsed laser beams at pulse rates of about 4,000 Hz or greater and at pulse energies of about 5 mJ or greater. Two separate discharge chambers are provided, one of which is a part of a master oscillator producing a very narrow band seed beam which is amplified in the second discharge chamber. The chambers can be controlled separately permitting separate optimization of wavelength parameters in the master oscillator and optimization of pulse energy parameters in the amplifying chamber. A preferred embodiment in a F2 laser system configured as a MOPA and specifically designed for use as a light source for integrated circuit lithography. In the preferred MOPA embodiment, each chamber comprises a single tangential fan providing sufficient gas flow to permit operation at pulse rates of 4000 Hz or greater by clearing debris from the discharge region in less time than the approximately 0.25 milliseconds between pulses. The master oscillator is equipped with a line selection package for selecting the strongest F2 spectral line.
摘要:
An oscillator-amplifier gas discharge laser system and method is disclosed which may comprise a first laser unit which may comprise a first discharge region which may contain an excimer or molecular fluorine lasing gas medium; a first pair of electrodes defining the first discharge region containing the lasing gas medium, a line narrowing unit for narrowing a spectral bandwidth of output laser light pulse beam pulses produced in said first discharge region; a second laser unit which may comprise a second discharge chamber which may contain an excimer or molecular fluorine lasing gas medium; a second pair of electrodes defining the second discharge region containing the lasing gas medium; a pulse power system providing electrical pulses to the first pair of electrodes and to the second pair of electrodes producing gas discharges in the lasing gas medium between the respective first and second pair of electrodes, and laser parameter control mechanism modifying a selected parameter of a selected laser output light pulse beam pulse produced by said gas discharge laser system by controlling the timing of the occurrence of the gas discharge between the first pair of electrodes and the occurrence of the gas discharge between the second pair of electrodes.
摘要:
An oscillator-amplifier gas discharge laser system and method is disclosed which may comprise a first laser unit which may comprise a first discharge region which may contain an excimer or molecular fluorine lasing gas medium; a first pair of electrodes defining the first discharge region containing the lasing gas medium, a line narrowing unit for narrowing a spectral bandwidth of output laser light pulse beam pulses produced in said first discharge region; a second laser unit which may comprise a second discharge chamber which may contain an excimer or molecular fluorine lasing gas medium; a second pair of electrodes defining the second discharge region containing the lasing gas medium; a pulse power system providing electrical pulses to the first pair of electrodes and to the second pair of electrodes producing gas discharges in the lasing gas medium between the respective first and second pair of electrodes, and laser parameter control mechanism modifying a selected parameter of a selected laser output light pulse beam pulse produced by said gas discharge laser system by controlling the timing of the occurrence of the gas discharge between the first pair of electrodes and the occurrence of the gas discharge between the second pair of electrodes.
摘要:
An injection seeded modular gas discharge laser system capable of producing high quality pulsed laser beams at pulse rates of about 4,000 Hz or greater and at pulse energies of about 5 mJ or greater. Two separate discharge chambers are provided, one of which is a part of a master oscillator producing a very narrow band seed beam which is amplified in the second discharge chamber. The chambers can be controlled separately permitting separate optimization of wavelength parameters in the master oscillator and optimization of pulse energy parameters in the amplifying chamber. A preferred embodiment in an ArF excimer laser system configured as a MOPA and specifically designed for use as a light source for integrated circuit lithography. In the preferred MOPA embodiment, each chamber comprises a single tangential fan providing sufficient gas flow to permit operation at pulse rates of 4000 Hz or greater by clearing debris from the discharge region in less time than the approximately 0.25 milliseconds between pulses. The master oscillator is equipped with a line narrowing package having a very fast tuning mirror capable of controlling centerline wavelength on a pulse-to-pulse basis at repetition rates of 4000 Hz or greater to a precision of less than 0.2 pm.
摘要:
An injection seeded modular gas discharge laser system capable of producing high quality pulsed laser beams at pulse rates of about 4,000 Hz or greater and at pulse energies of about 5 mJ or greater. Two separate discharge chambers are provided, one of which is a part of a master oscillator producing a very narrow band seed beam which is amplified in the second discharge chamber. The chambers can be controlled separately permitting separate optimization of wavelength parameters in the master oscillator and optimization of pulse energy parameters in the amplifying chamber. A preferred embodiment in an ArF excimer laser system configured as a MOPA and specifically designed for use as a light source for integrated circuit lithography. In the preferred MOPA embodiment, each chamber comprises a single tangential fan providing sufficient gas flow to permit operation at pulse rates of 4000 Hz or greater by clearing debris from the discharge region in less time than the approximately 0.25 milliseconds between pulses. The master oscillator is equipped with a line narrowing package having a very fast tuning mirror capable of controlling centerline wavelength on a pulse-to-pulse basis at repetition rates of 4000 Hz or greater to a precision of less than 0.2 pm.
摘要:
A reliable, modular, production quality narrow-band KrF excimer laser capable of producing 10 mJ laser pulses at 1000 Hz with a bandwidth of about 0.6 pm or less. The present invention is especially suited to long-term round-the-clock operation in the lithographic production of integrated circuits. Improvements over prior art lasers include a single upstream preionizer tube and acoustic baffles. A preferred embodiment includes reduced fluorine concentration, an anode support bar shaped to reduce aerodynamic reaction forces on blower bearings, a modified pulse power system providing faster pulse rise time, an output coupler with substantially increased reflectivity, a line narrowing module with CaF prism beam expanders, a more accurate wavemeter, a laser computer controller programmed with new and improved pulse energy control algorithm.
摘要:
Systems and methods are disclosed for shaping laser light as a line beam for interaction with a film that may have an imperfect, non-planar surface. The system may include a beam stop that defines an edge; a sensor that measures a distance between a selected point on a surface of the film and a reference plane and generates a signal representative of the measured distance; and an actuator coupled to the beam stop and responsive to the signal to move a portion of beam stop edge. Movement of the beam stop edge portion shifts a corresponding portion of the focused line beam in a direction normal to the reference plane to produce a line beam that more closely conforms to the surface profile of the film.
摘要:
Systems and methods are disclosed for shaping a laser beam for interaction with a film in which the laser beam travels along a beam path and defines a short-axis and a long-axis. In one aspect, the system may include a first short-axis element having an edge positioned at a distance, d1, along the beam path from the film and a second short-axis element having an edge positioned at a distance, d2, along the beam path from the film, with d2