公开(公告)号：US5791782A

公开(公告)日：1998-08-11

申请号：US531602

申请日：1995-09-21

申请人： David Wooten ,  Bruce Krein ,  Jianou Shi

发明人： David Wooten ,  Bruce Krein ,  Jianou Shi

IPC分类号： G01J5/12 ,  G01J5/14 ,  G01K1/14 ,  G01K7/02 ,  G01K1/00 ,  G01K7/00

CPC分类号： G01K1/143

摘要： A combination contact temperature probe/wafer support includes a thermocouple enclosing probe head of low thermal mass and large contact area supported by a support means such that 1) there is a high thermal resistivity connection between the support means and the probe head, and 2) the probe head is self orienting under the weight of the wafer so that the contact area is maintained coplanar with the surface of the wafer.

摘要翻译： 组合接触式温度探针/晶片支架包括热电偶，其包围具有低热质量的探针头和由支撑装置支撑的大的接触面积，使得1）在支撑装置和探头之间存在高热阻连接，以及2） 探针头在晶片的重量下是自定向的，使得接触面积保持与晶片的表面共面。

公开(公告)号：US06909291B1

公开(公告)日：2005-06-21

申请号：US10606066

申请日：2003-06-24

申请人： Zhiwei (Steve) Xu ,  Jianou Shi ,  Shiyou Pei ,  Mahmood Mirzaaghaeian ,  Jeffrey A. Rzepiela

发明人： Zhiwei (Steve) Xu ,  Jianou Shi ,  Shiyou Pei ,  Mahmood Mirzaaghaeian ,  Jeffrey A. Rzepiela

IPC分类号： G01N27/00 ,  G01R35/00 ,  G01R31/02

CPC分类号： G01N27/002

摘要： A method and a system for calibrating the work function of a non-contact voltage sensor are provided. The method includes preparing a reference sample to have a stable work function, measuring a voltage of the sample using a non-contact voltage sensor, and determining a work function correction factor of the sensor from the measured voltage. In turn, the calibrated work function may be used to adjust voltages of substrates measured by the sensor. A corona gun which includes a first electrode and one or more conductive rods is provided. In some embodiments, the conductive rods may be angled between 0 and 90 degrees with respect to a first electrode sidewall and/or be concentrically arranged less than 90 degrees from each other. In addition or alternatively, the corona gun may be adapted to alter its length and/or include a second electrode partially inset within a space surrounded by the first electrode.

摘要翻译： 提供了一种用于校准非接触式电压传感器的功能的方法和系统。 该方法包括制备参考样品以具有稳定的功函数，使用非接触电压传感器测量样品的电压，以及根据测量的电压确定传感器的功函数校正因子。 反过来，校准的功函数可以用于调节由传感器测量的衬底的电压。 提供包括第一电极和一个或多个导电棒的电晕枪。 在一些实施例中，导电棒相对于第一电极侧壁可以在0度和90度之间成角度和/或彼此同心布置成小于90度。 另外或替代地，电晕枪可以适于改变其长度和/或包括在由第一电极包围的空间内部分插入的第二电极。

公开(公告)号：US20070109003A1

公开(公告)日：2007-05-17

申请号：US11465888

申请日：2006-08-21

申请人： Jianou Shi ,  Xiafang Zhang ,  Shiyou Pei ,  Shu Huang ,  Dennis Yeh ,  Jeffrey Rzepiela ,  Yiping Feng ,  Ahmad Khan

发明人： Jianou Shi ,  Xiafang Zhang ,  Shiyou Pei ,  Shu Huang ,  Dennis Yeh ,  Jeffrey Rzepiela ,  Yiping Feng ,  Ahmad Khan

IPC分类号： G01R31/02

CPC分类号： G01R31/2831 ,  G01R31/2856 ,  H01L22/34 ,  H01L2924/0002 ,  H01L2924/00

摘要： Test pads, methods, and systems for measuring properties of a wafer are provided. One test pad formed on a wafer includes a test structure configured such that one or more electrical properties of the test structure can be measured. The test pad also includes a conductive layer formed between the test structure and the wafer. The conductive layer prevents structures located under the test structure between the conductive layer and the wafer from affecting the one or more electrical properties of the test structure during measurement. One method for assessing plasma damage of a wafer includes measuring one or more electrical properties of a test structure formed on the wafer and determining an index characterizing the plasma damage of the test structure using the one or more electrical properties.

摘要翻译： 提供了用于测量晶片性能的测试垫，方法和系统。 形成在晶片上的一个测试焊盘包括测试结构，其被配置为使得可以测量测试结构的一个或多个电特性。 测试垫还包括在测试结构和晶片之间形成的导电层。 导电层防止在测量期间位于导电层和晶片之间的测试结构下方的结构影响测试结构的一个或多个电性能。 用于评估晶片的等离子体损伤的一种方法包括测量形成在晶片上的测试结构的一个或多个电特性，并使用一个或多个电性质确定表征测试结构的等离子体损伤的指标。

公开(公告)号：US5961851A

公开(公告)日：1999-10-05

申请号：US626451

申请日：1996-04-02

申请人： Mohammad Kamarehi ,  Richard Pingree ,  Jianou Shi ,  Gerald Cox

发明人： Mohammad Kamarehi ,  Richard Pingree ,  Jianou Shi ,  Gerald Cox

IPC分类号： C23F4/00 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H05H1/00

CPC分类号： H01J37/32192

摘要： A method of removing material from a substrate, and a plasma discharge device wherein a plasma is excited by microwave energy having an electric field which is azimuthally and axially uniform in relation to the plasma tube. The microwave cavity is divided longitudinally into sections by conducting partitions, each of which is separately fed with microwave energy, and the plasma tube extends through openings in the partitions.

摘要翻译： 从衬底去除材料的方法和等离子体放电装置，其中等离子体由具有相对于等离子体管的方位角和轴向均匀的电场的微波能量激发。 微波腔通过导电隔板纵向分成几个部分，每个隔板分别供给微波能量，等离子体管延伸穿过隔板中的开口。

公开(公告)号：US07893703B2

公开(公告)日：2011-02-22

申请号：US11465893

申请日：2006-08-21

申请人： Jeffrey A. Rzepiela ,  Yiping Feng ,  Shiyou Pei ,  Alexander Kagan ,  Jianou Shi ,  Sergio Edelstein

发明人： Jeffrey A. Rzepiela ,  Yiping Feng ,  Shiyou Pei ,  Alexander Kagan ,  Jianou Shi ,  Sergio Edelstein

IPC分类号： G01R31/308

CPC分类号： G01R31/2831 ,  G01R31/2856 ,  H01L22/34 ,  H01L2924/0002 ,  H01L2924/00

摘要： Systems and methods for controlling deposition of a charge on a wafer for measurement of one or more electrical properties of the wafer are provided. One system includes a corona source configured to deposit the charge on the wafer and a sensor configured to measure one or more conditions within the corona source. This system also includes a control subsystem configured to alter one or more parameters of the corona source based on the one or more conditions. Another system includes a corona source configured to deposit the charge on the wafer and a mixture of gases disposed within a discharge chamber of the corona source during the deposition of the charge. The mixture of gases alters one or more parameters of the charge deposited on the wafer.

摘要翻译： 提供了用于控制晶片上的电荷沉积以测量晶片的一个或多个电性能的系统和方法。 一个系统包括配置成将电荷沉积在晶片上的电晕源和配置成测量电晕源内的一个或多个条件的传感器。 该系统还包括配置为基于一个或多个条件来改变电晕源的一个或多个参数的控制子系统。 另一种系统包括电晕源，其被配置为在电荷沉积期间将电荷沉积在晶片上以及布置在电晕源的放电室内的气体混合物。 气体混合物改变沉积在晶片上的电荷的一个或多个参数。

公开(公告)号：US07538333B1

公开(公告)日：2009-05-26

申请号：US11460517

申请日：2006-07-27

申请人： Amin Samsavar ,  John M. Schmidt ,  Rainer Schierle ,  Gregory S. Horner ,  Thomas G. Miller ,  Zhiwei Xu ,  Xiaofeng Hu ,  Jianou Shi ,  Sergio Edelstein

发明人： Amin Samsavar ,  John M. Schmidt ,  Rainer Schierle ,  Gregory S. Horner ,  Thomas G. Miller ,  Zhiwei Xu ,  Xiaofeng Hu ,  Jianou Shi ,  Sergio Edelstein

IPC分类号： H01J37/30 ,  H01J37/317 ,  G01R31/26

CPC分类号： G01R31/303 ,  G01R31/2831 ,  H01L22/14 ,  H01L2924/0002 ,  H01L2924/00

摘要： Systems and methods for determining a property of a specimen are provided. The specimen may be a product wafer. The method may include biasing a focused spot on the specimen. The method may also include measuring a parameter of a measurement spot on the specimen. The measurement spot may overlap the focused spot. In addition, the method may include determining the property of the specimen from the measured parameter. Systems and methods for varying the performance of a corona source are also provided. The method may include altering a property of the environment within the corona source. The property may include, but is not limited to, temperature, pressure, humidity, and/or partial pressure of a gas within the corona source.

摘要翻译： 提供了用于确定样品性质的系统和方法。 样品可以是产品晶片。 该方法可以包括将聚焦斑点偏置在样本上。 该方法还可以包括测量样品上的测量点的参数。 测量点可能与聚焦点重叠。 此外，该方法可以包括根据测量的参数确定样品的性质。 还提供了用于改变电晕源的性能的系统和方法。 该方法可以包括改变电晕源内的环境的属性。 该性质可以包括但不限于电晕源内的气体的温度，压力，湿度和/或分压。

公开(公告)号：US20070126458A1

公开(公告)日：2007-06-07

申请号：US11669209

申请日：2007-01-31

申请人： Jianou Shi ,  Jeffrey Rzepiela ,  Shiyou Pei ,  Zhiwei Xu ,  John Alexander

发明人： Jianou Shi ,  Jeffrey Rzepiela ,  Shiyou Pei ,  Zhiwei Xu ,  John Alexander

IPC分类号： G01R31/26

CPC分类号： G01R31/311 ,  G01R31/2648

摘要： Various methods and systems for determining one or more properties of a specimen are provided. One system for determining a property of a specimen is configured to illuminate a specimen with different wavelengths of light substantially simultaneously. The different wavelengths of light are modulated at substantially the same frequency. The system is also configured to perform at least two measurements on the specimen. A minority carrier diffusion length of the specimen may be determined from the measurements and absorption coefficients of the specimen at the different wavelengths. Another system for detecting defects on a specimen is configured to deposit a charge at multiple locations on an upper surface of the specimen. This system is also configured to measure a vibration of a probe at the multiple locations. Defects may be detected on the specimen using a two-dimensional map of the specimen generated from the measured surface voltages.

摘要翻译： 提供了用于确定样本的一个或多个属性的各种方法和系统。 用于确定样本特性的一个系统被配置为基本上同时照射具有不同波长的光的样本。 不同波长的光以基本上相同的频率被调制。 该系统还被配置为对样本进行至少两次测量。 样品的少数载流子扩散长度可以根据不同波长的样品的测量和吸收系数来确定。 用于检测样本上的缺陷的另一系统被配置为在样本的上表面上的多个位置沉积电荷。 该系统还被配置为测量在多个位置处的探针的振动。 可以使用从测量的表面电压产生的样本的二维图来在样本上检测缺陷。

公开(公告)号：US06265320B1

公开(公告)日：2001-07-24

申请号：US09467389

申请日：1999-12-21

申请人： Jianou Shi ,  Thomas W. Mountsier ,  Mary Anne Plano ,  Joseph R. Laia

发明人： Jianou Shi ,  Thomas W. Mountsier ,  Mary Anne Plano ,  Joseph R. Laia

IPC分类号： H01L21302

CPC分类号： H01L21/31138 ,  H01L21/76802 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76828

摘要： A method of limiting surface damage during reactive ion etching of an organic polymer layer on a semiconductor substrate combines particular choices of process gases and plasma conditions with a post-etch passivation treatment. According to the method, a low density plasma etcher is used with a process gas mixture of one or more of an inert gas such as argon, helium, or nitrogen; methane; hydrogen; and oxygen, where the percentage of oxygen is up to about 5%. Typically a parallel plate plasma etcher is used. The reactive ion etching is followed by a post-etch passivation treatment in a which a gas containing hydrogen is flowed over the etched layer at an elevated temperature. The method is particularly useful in reactive ion etching of fluorinated organic polymer layers such as films formed from parylene AF4, and layers of poly(arylene ethers) and TEFLON®.

摘要翻译： 在半导体衬底上的有机聚合物层的反应离子蚀刻期间限制表面损伤的方法通过蚀刻后钝化处理来组合工艺气体和等离子体条件的特定选择。 根据该方法，使用低密度等离子体蚀刻器与一种或多种惰性气体如氩气，氦气或氮气的处理气体混合物; 甲烷 氢; 和氧气，其中氧气的百分比高达约5％。 通常使用平行板等离子体蚀刻器。 反应离子蚀刻之后是后蚀刻钝化处理，其中含有氢的气体在升高的温度下流过蚀刻层。 该方法在诸如由聚对二甲苯AF4形成的膜和聚（亚芳基醚）和TEFLON层形成的氟化有机聚合物层的反应离子蚀刻中特别有用。

公开(公告)号：US5767626A

公开(公告)日：1998-06-16

申请号：US568290

申请日：1995-12-06

申请人： Mohammad Kamarehi ,  Richard Pingree ,  Jianou Shi

发明人： Mohammad Kamarehi ,  Richard Pingree ,  Jianou Shi

IPC分类号： H01J65/04 ,  H05B41/24 ,  H05B41/38

CPC分类号： H05B41/24 ,  H05B41/382

摘要： An electrodeless lamp is started by coupling microwave power of a first frequency to a lamp cavity, while the discharge is maintained by coupling microwave power of a second frequency, wherein the first frequency is lower than the second frequency. A cooling fluid is impinged on the lamp bulb immediately before the application of the microwave power of the first frequency.

摘要翻译： 通过将第一频率的微波功率耦合到灯泡腔来启动无电极灯，同时通过耦合第二频率的微波功率来维持放电，其中第一频率低于第二频率。 在施加第一频率的微波功率之前，冷却流体就立即撞在灯泡上。

公开(公告)号：US08804106B2

公开(公告)日：2014-08-12

申请号：US13530774

申请日：2012-06-22

申请人： NanChang Zhu ,  Derrick Shaughnessy ,  Houssam Chouaib ,  Yaolei Zheng ,  Lu Yu ,  Jianli Cui ,  Jin An ,  Jianou Shi

发明人： NanChang Zhu ,  Derrick Shaughnessy ,  Houssam Chouaib ,  Yaolei Zheng ,  Lu Yu ,  Jianli Cui ,  Jin An ,  Jianou Shi

IPC分类号： G01N21/00 ,  G01B11/28

CPC分类号： G01B11/0633 ,  G01N21/1717 ,  G01N21/55 ,  G01N21/8422 ,  G01N21/9501 ,  G01N2021/1719 ,  G01N2021/8427

摘要： The disclosure is directed to nondestructive systems and methods for simultaneously measuring active carrier concentration and thickness of one or more doped semiconductor layers. Reflectance signals may be defined as functions of active carrier concentration and thickness varying over different wavelengths and over different incidence angles of analyzing illumination reflected off the surface of an analyzed sample. Systems and methods are provided for collecting a plurality of reflectance signals having either different wavelengths or different incidence angle ranges to extract active carrier density and thickness of one or more doped semiconductor layers.

摘要翻译： 本公开涉及用于同时测量一个或多个掺杂半导体层的有源载流子浓度和厚度的非破坏性系统和方法。 反射信号可以被定义为在不同波长上变化的有效载流子浓度和厚度的函数以及从分析样品的表面反射的分析照射的不同入射角的函数。 提供了系统和方法来收集具有不同波长或不同入射角范围的多个反射信号，以提取一个或多个掺杂半导体层的有效载流子密度和厚度。