公开(公告)号：US07284324B2

公开(公告)日：2007-10-23

申请号：US11197675

申请日：2005-08-04

Applicant: Christopher L. Chua ,  Francesco Lemmi ,  Koenraad F. Van Schuylenbergh ,  Jeng Ping Lu ,  David K. Fork ,  Eric Peeters ,  Decai Sun ,  Donald L. Smith ,  Linda T. Romano

Inventor： Christopher L. Chua ,  Francesco Lemmi ,  Koenraad F. Van Schuylenbergh ,  Jeng Ping Lu ,  David K. Fork ,  Eric Peeters ,  Decai Sun ,  Donald L. Smith ,  Linda T. Romano

IPC: H01R43/16

CPC classification number: H01L24/13 ,  G01R1/06727 ,  G01R3/00 ,  H01F17/0033 ,  H01F17/02 ,  H01F41/041 ,  H01L21/76838 ,  H01L21/7688 ,  H01L23/498 ,  H01L23/49811 ,  H01L23/5227 ,  H01L24/11 ,  H01L24/16 ,  H01L24/48 ,  H01L28/10 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05624 ,  H01L2224/13099 ,  H01L2224/4847 ,  H01L2224/8592 ,  H01L2924/0001 ,  H01L2924/00014 ,  H01L2924/00015 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/0104 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01057 ,  H01L2924/01058 ,  H01L2924/01061 ,  H01L2924/01068 ,  H01L2924/01072 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01084 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12034 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3011 ,  Y10T29/4902 ,  Y10T29/49071 ,  Y10T29/49147 ,  Y10T29/49204 ,  Y10T29/49208 ,  Y10T29/4921 ,  Y10T29/49218 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/85399 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: An out-of-plane micro-structure which can be used for on-chip integration of high-Q inductors and transformers places the magnetic field direction parallel to the substrate plane without requiring high aspect ratio processing. The photolithographically patterned coil structure includes an elastic member having an intrinsic stress profile. The intrinsic stress profile biases a free portion away from the substrate forming a loop winding. An anchor portion remains fixed to the substrate. The free portion end becomes a second anchor portion which may be connected to the substrate via soldering or plating. A series of individual coil structures can be joined via their anchor portions to form inductors and transformers.

Abstract translation: 可以用于高Q电感和变压器的片上集成的平面外微结构使得磁场方向平行于衬底平面而不需要高纵横比处理。 光刻图案的线圈结构包括具有固有应力分布的弹性构件。 固有的应力分布使形成环绕的基板远离基板偏移。 锚固部分​​保持固定到基底上。 自由部分端部成为可以通过焊接或电镀而连接到基板的第二锚固部分。 一系列单独的线圈结构可以通过它们的锚定部分接合以形成电感器和变压器。

公开(公告)号：US07120182B2

公开(公告)日：2006-10-10

申请号：US10739181

申请日：2003-12-19

Applicant: Christopher L. Chua ,  Decai Sun

Inventor： Christopher L. Chua ,  Decai Sun

IPC: H01S5/20 ,  H01S5/00

CPC classification number: B82Y20/00 ,  H01S5/2063 ,  H01S5/22 ,  H01S5/2275 ,  H01S5/34313 ,  H01S5/4031

Abstract: An array of light emitters includes a plurality of light emitting structures formed over a layered structure with at least one quantum well layer. At least one cladding layer is formed on over the at least one quantum well layer. At least one waveguide layer is formed on or over the at least one cladding layer. At least one isolation region is formed at least in between at least two of the plurality of light emitting structures. The at least one isolation region isolates the at least two light emitting structures from each other.

Abstract translation: 光发射器阵列包括在具有至少一个量子阱层的分层结构上形成的多个发光结构。 在所述至少一个量子阱层上形成至少一个覆层。 至少一个波导层形成在至少一个包层上或上面。 至少在多个发光结构中的至少两个之间形成至少一个隔离区域。 所述至少一个隔离区将所述至少两个发光结构彼此隔离。

公开(公告)号：US6054335A

公开(公告)日：2000-04-25

申请号：US209866

申请日：1998-12-11

Applicant: Decai Sun ,  Ross D. Bringans ,  Christopher L. Chua ,  Philip D. Floyd ,  Eric Peeters ,  Joel A. Kubby ,  Alex T. Tran

Inventor： Decai Sun ,  Ross D. Bringans ,  Christopher L. Chua ,  Philip D. Floyd ,  Eric Peeters ,  Joel A. Kubby ,  Alex T. Tran

IPC: B81B3/00 ,  B81B7/02 ,  H01L27/15 ,  H01S5/00 ,  H01S5/02 ,  H01S5/022 ,  H01S5/026 ,  H01S5/042 ,  H01S5/183 ,  H01S5/42 ,  H01L21/00

CPC classification number: H01S5/18308 ,  H01S5/02288 ,  H01L27/15 ,  H01S5/021 ,  H01S5/02252 ,  H01S5/4087 ,  H01S5/423 ,  H01S5/426

Abstract: A III-V compound light emitter is integrated with Si-based actuators. The Proposed devices take advantage of the superior optical properties of III-V compounds and the superior mechanical properties of Si, as well as mature fabrication technologies of Si-Micro-Electro-Mechanical Systems (MEMS). The emitter can be a light emitting diode (LED), a vertical cavity surface emitting laser (VCSEL) or an edge emitting laser. Electro or magnetic based actuation from Si-based actuators provides linear or angular movement of the light emitter.

Abstract translation: III-V复合光发射器与Si基致动器集成。 提出的器件利用了III-V化合物的优异光学性能和Si的优异机械性能，以及Si-Micro-Electro-Mechanical Systems（MEMS）的成熟制造技术。 发射极可以是发光二极管（LED），垂直腔表面发射激光器（VCSEL）或边缘发射激光器。 基于Si的致动器的基于电或磁的致动器提供光发射器的线性或角度运动。

公开(公告)号：US06674090B1

公开(公告)日：2004-01-06

申请号：US09472754

申请日：1999-12-27

Applicant: Christopher L. Chua ,  Philip D. Floyd ,  Thomas L. Paoli ,  Decai Sun

Inventor： Christopher L. Chua ,  Philip D. Floyd ,  Thomas L. Paoli ,  Decai Sun

IPC: H01L2906

CPC classification number: H01L29/0649 ,  H01L21/76264 ,  H01L21/76281 ,  H01S5/2215

Abstract: An active semiconductor device is made using planar lateral oxidation to define a core region that is surrounded by regions of buried oxidized semiconductor material in. The buried oxidized semiconductor material provides optical waveguiding, and or a defined electrical path.

Abstract translation: 使用平面侧向氧化来制造有源半导体器件，以限定由埋入的氧化半导体材料的区域包围的芯区域。掩埋氧化半导体材料提供光波导和/或定义的电路径。

公开(公告)号：US06947291B2

公开(公告)日：2005-09-20

申请号：US10154555

申请日：2002-05-23

Applicant: Christopher L. Chua ,  Francesco Lemmi ,  Koenraad F. Van Schuylenbergh ,  Jeng Ping Lu ,  David K. Fork ,  Eric Peeters ,  Decai Sun ,  Donald L. Smith ,  Linda T. Romano

Inventor： Christopher L. Chua ,  Francesco Lemmi ,  Koenraad F. Van Schuylenbergh ,  Jeng Ping Lu ,  David K. Fork ,  Eric Peeters ,  Decai Sun ,  Donald L. Smith ,  Linda T. Romano

IPC: H01F41/04 ,  G01R1/067 ,  G01R3/00 ,  G03C5/00 ,  H01F17/00 ,  H01F17/02 ,  H01F27/29 ,  H01L21/02 ,  H01L21/60 ,  H01L21/768 ,  H01L23/485 ,  H01L23/49 ,  H01L23/498 ,  H01L23/522 ,  H01R9/03 ,  H05K7/02

CPC classification number: H01L24/13 ,  G01R1/06727 ,  G01R3/00 ,  H01F17/0033 ,  H01F17/02 ,  H01F41/041 ,  H01L21/76838 ,  H01L21/7688 ,  H01L23/498 ,  H01L23/49811 ,  H01L23/5227 ,  H01L24/11 ,  H01L24/16 ,  H01L24/48 ,  H01L28/10 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05624 ,  H01L2224/13099 ,  H01L2224/4847 ,  H01L2224/8592 ,  H01L2924/0001 ,  H01L2924/00014 ,  H01L2924/00015 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/0104 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01057 ,  H01L2924/01058 ,  H01L2924/01061 ,  H01L2924/01068 ,  H01L2924/01072 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01084 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12034 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3011 ,  Y10T29/4902 ,  Y10T29/49071 ,  Y10T29/49147 ,  Y10T29/49204 ,  Y10T29/49208 ,  Y10T29/4921 ,  Y10T29/49218 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/85399 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: An out-of-plane micro-structure which can be used for on-chip integration of high-Q inductors and transformers places the magnetic field direction parallel to the substrate plane without requiring high aspect ratio processing. The photolithographically patterned coil structure includes an elastic member having an intrinsic stress profile. The intrinsic stress profile biases a free portion away from the substrate forming a loop winding. An anchor portion remains fixed to the substrate. The free portion end becomes a second anchor portion which may be connected to the substrate via soldering or plating. A series of individual coil structures can be joined via their anchor portions to form inductors and transformers.

公开(公告)号：US06706202B1

公开(公告)日：2004-03-16

申请号：US09672386

申请日：2000-09-28

Applicant: Decai Sun ,  Michel A. Rosa ,  Eric Peeters ,  Francesco Lemmi ,  Patrick Y. Maeda ,  Christopher L. Chua

Inventor： Decai Sun ,  Michel A. Rosa ,  Eric Peeters ,  Francesco Lemmi ,  Patrick Y. Maeda ,  Christopher L. Chua

IPC: B81B702

CPC classification number: B81C1/00666 ,  B81B2201/047 ,  B81C2201/017

Abstract: A method is disclosed for making shaped optical moems components with stressed thin films. In particular, stressed thin films are used to make mirror structures.

Abstract translation: 公开了一种用于制造具有应力薄膜的成形光学元件的方法。 特别地，应力薄膜用于制造镜面结构。

公开(公告)号：US07042015B2

公开(公告)日：2006-05-09

申请号：US09924840

申请日：2001-08-08

Applicant: Decai Sun ,  Eric Peeters ,  Christopher L. Chua ,  Francesco Lemmi ,  Patrick Y. Maeda ,  Scott Solberg

Inventor： Decai Sun ,  Eric Peeters ,  Christopher L. Chua ,  Francesco Lemmi ,  Patrick Y. Maeda ,  Scott Solberg

IPC: H01L31/12

CPC classification number: H01L31/1055 ,  B41J2/45 ,  H01L25/0753 ,  H01L31/1016 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01S5/02 ,  H01S5/0262 ,  H01S5/4025 ,  H01L2924/00

Abstract: A light-producing device integrated with a power monitoring system include a light-producing device from which light is emitted in wavelengths that can range from approximately 700 nm to approximately 3 microns. A semi-transparent sensor is located such that at least a portion of the light emitted passes through the semi-transparent sensor and at least a portion of light is absorbed by the semi-transparent sensor. The semi-transparent sensor is configured to be semi-transparent at wavelengths that can range from 700 nm to 3 microns. The semi-transparent sensor may also be used with an external light source, for example with fiber-optic cables.

公开(公告)号：US06548908B2

公开(公告)日：2003-04-15

申请号：US09473108

申请日：1999-12-27

Applicant: Christopher L. Chua ,  Philip D. Floyd ,  Thomas L. Paoli ,  Decai Sun

Inventor： Christopher L. Chua ,  Philip D. Floyd ,  Thomas L. Paoli ,  Decai Sun

IPC: H01L2348

CPC classification number: G02B6/136 ,  G02B6/132 ,  G02B2006/12102 ,  G02B2006/12104 ,  G02B2006/12119 ,  G02B2006/12121 ,  G02B2006/12142 ,  G02B2006/1215 ,  G02B2006/12176 ,  H01S5/18313 ,  H01S5/18338 ,  H01S5/18388 ,  H01S5/2215

Abstract: A passive semiconductor device structure is made using planar lateral oxidation to define a buried oxidized semiconductor structure such as a passive waveguide, microlens or DBR mirror stack.

Abstract translation: 无源半导体器件结构使用平面侧向氧化来形成掩埋氧化半导体结构，例如无源波导，微透镜或DBR反射镜叠层。

公开(公告)号：US07195939B2

公开(公告)日：2007-03-27

申请号：US10281421

申请日：2002-10-25

Applicant: Christopher L. Chua ,  Philip D. Floyd ,  Thomas L. Paoli ,  Decai Sun

Inventor： Christopher L. Chua ,  Philip D. Floyd ,  Thomas L. Paoli ,  Decai Sun

IPC: H01L21/00

CPC classification number: H01S5/0261 ,  H01S5/18313 ,  H01S5/1833 ,  H01S5/18388

Abstract: Semiconductor devices in an optoelectronic integrated circuit are electrically isolated from each other by using planar lateral oxidation to oxidize a buried semiconductor layer vertically separating the semiconductor devices.

Abstract translation: 光电子集成电路中的半导体器件通过使用平面横向氧化来彼此电绝缘以氧化垂直分离半导体器件的掩埋半导体层。

公开(公告)号：US07000315B2

公开(公告)日：2006-02-21

申请号：US10387203

申请日：2003-03-11

Applicant: Christopher L. Chua ,  Francesco Lemmi ,  Koenraad F. Van Schuylenbergh ,  Jeng Ping Lu ,  David K. Fork ,  Eric Peeters ,  Decai Sun ,  Donald L. Smith ,  Linda T. Romano

Inventor： Christopher L. Chua ,  Francesco Lemmi ,  Koenraad F. Van Schuylenbergh ,  Jeng Ping Lu ,  David K. Fork ,  Eric Peeters ,  Decai Sun ,  Donald L. Smith ,  Linda T. Romano

IPC: H01R43/16

CPC classification number: H01L24/13 ,  G01R1/06727 ,  G01R3/00 ,  H01F17/0033 ,  H01F17/02 ,  H01F41/041 ,  H01L21/76838 ,  H01L21/7688 ,  H01L23/498 ,  H01L23/49811 ,  H01L23/5227 ,  H01L24/11 ,  H01L24/16 ,  H01L24/48 ,  H01L28/10 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05624 ,  H01L2224/13099 ,  H01L2224/4847 ,  H01L2224/8592 ,  H01L2924/0001 ,  H01L2924/00014 ,  H01L2924/00015 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/0104 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01057 ,  H01L2924/01058 ,  H01L2924/01061 ,  H01L2924/01068 ,  H01L2924/01072 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01084 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12034 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3011 ,  Y10T29/4902 ,  Y10T29/49071 ,  Y10T29/49147 ,  Y10T29/49204 ,  Y10T29/49208 ,  Y10T29/4921 ,  Y10T29/49218 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/85399 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: An out-of-plane micro-structure which can be used for on-chip integration of high-Q inductors and transformers places the magnetic field direction parallel to the substrate plane without requiring high aspect ratio processing. The photolithographically patterned coil structure includes an elastic member having an intrinsic stress profile. The intrinsic stress profile biases a free portion away from the substrate forming a loop winding. An anchor portion remains fixed to the substrate. The free portion end becomes a second anchor portion which may be connected to the substrate via soldering or plating. A series of individual coil structures can be joined via their anchor portions to form inductors and transformers.