摘要:
Apparatus for atomic layer deposition on a surface of a substrate includes a precursor injector head. The precursor injector head includes a precursor supply and a deposition space that in use is bounded by the precursor injector head and the substrate surface. The precursor injector head is arranged for injecting a precursor gas from the precursor supply into the deposition space for contacting the substrate surface. The apparatus is arranged for relative motion between the deposition space and the substrate in a plane of the substrate surface. The apparatus is provided with a confining structure arranged for confining the injected precursor gas to the deposition space adjacent to the substrate surface.
摘要:
Apparatus for atomic layer deposition on a surface of a substrate includes a precursor injector head. The precursor injector head includes a precursor supply and a deposition space that in use is bounded by the precursor injector head and the substrate surface. The precursor injector head is arranged for injecting a precursor gas from the precursor supply into the deposition space for contacting the substrate surface. The apparatus is arranged for relative motion between the deposition space and the substrate in a plane of the substrate surface. The apparatus is provided with a confining structure arranged for confining the injected precursor gas to the deposition space adjacent to the substrate surface.
摘要:
Method of depositing an atomic layer on a substrate. The method comprises supplying a precursor gas from a precursor-gas supply of a deposition head that may be part of a rotatable drum. The precursor gas is provided from the precursor-gas supply towards the substrate. The method further comprises moving the precursor-gas supply by rotating the deposition head along the substrate which in its turn is moved along the rotating drum. The method further comprises switching between supplying the precursor gas from the precursor-gas supply towards the substrate over a first part of the rotation trajectory; and interrupting supplying the precursor gas from the precursor-gas supply over a second part of the rotation trajectory.
摘要:
A lithographic projection apparatus including a support structure configured to support a patterning device, the patterning device configured to impart a beam of radiation with a pattern in its cross-section; a substrate holder configured to hold a substrate; a projection system configured to expose the patterned beam of radiation on a target portion of the substrate; and a system configured to compensate one or more perturbation factors by providing an additional beam of radiation to be exposed on the target portion of the substrate, the additional beam of radiation being imparted in its cross-section with an additional pattern which is based on the pattern of the patterning device and on lithographic projection apparatus property data, the lithographic projection apparatus property data characterizing a level and nature of one or more systematic perturbation factors of different lithographic apparatus.
摘要:
Method of depositing an atomic layer on a substrate. The method comprises supplying a precursor gas from a precursor-gas supply of a deposition head that may be part of a rotatable drum. The precursor gas is provided from the precursor-gas supply towards the substrate. The method further comprises moving the precursor-gas supply by rotating the deposition head along the substrate which in its turn is moved along the rotating drum. The method further comprises switching between supplying the precursor gas from the precursor-gas supply towards the substrate over a first part of the rotation trajectory; and interrupting supplying the precursor gas from the precursor-gas supply over a second part of the rotation trajectory
摘要:
Disclosed are methods for preparing samples that include forming a first channel in a material by directing a first plurality of noble gas ions at the material, forming a second channel in the material by directing a second plurality of noble gas ions at the material, where the second channel is spaced from the first channel so that a portion of the material between channels has a mean thickness of 100 nm or less, and detaching the portion from the material to yield the sample.
摘要:
A lithographic apparatus and method is disclosed to reduce the exposure time that a substrate spends within a main lithographic apparatus by pre- (or post-) exposing one or more edge devices on the substrate. Because an edge device does not ultimately yield a useful device, it can be exposed with a lithographic apparatus that has a lower resolution than that used to expose one or more of the other, complete devices produced from the substrate. Therefore, the pre- (or post-) exposure of an edge device can be performed using a less complex, and less expensive, lithographic device.
摘要:
A lithographic apparatus and method is disclosed to reduce the exposure time that a substrate spends within a main lithographic apparatus by pre- (or post-) exposing one or more edge devices on the substrate. Because an edge device does not ultimately yield a useful device, it can be exposed with a lithographic apparatus that has a lower resolution than that used to expose one or more of the other, complete devices produced from the substrate. Therefore, the pre- (or post-) exposure of an edge device can be performed using a less complex, and less expensive, lithographic device.
摘要:
Disclosed are methods for preparing samples that include forming a first channel in a material by directing a first plurality of noble gas ions at the material, forming a second channel in the material by directing a second plurality of noble gas ions at the material, where the second channel is spaced from the first channel so that a portion of the material between channels has a mean thickness of 100 nm or less, and detaching the portion from the material to yield the sample.
摘要:
A lithographic projection apparatus including a support structure configured to support a patterning device, the patterning device configured to impart a beam of radiation with a pattern in its cross-section; a substrate holder configured to hold a substrate; a projection system configured to expose the patterned beam of radiation on a target portion of the substrate; and a system configured to compensate one or more perturbation factors by providing an additional beam of radiation to be exposed on the target portion of the substrate, the additional beam of radiation being imparted in its cross-section with an additional pattern which is based on the pattern of the patterning device and on lithographic projection apparatus property data, the lithographic projection apparatus property data characterizing a level and nature of one or more systematic perturbation factors of different lithographic apparatus.