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1.发明授权公开(公告)号：US08570489B2
公开(公告)日：2013-10-29
申请号：US12741960
申请日：2008-11-07
申请人： Jan Bernard Plechelmus Van Schoot , Antonius Johannes Josephus Van Dijsseldonk , Hans Van Der Laan , Diederik Jan Maas
发明人： Jan Bernard Plechelmus Van Schoot , Antonius Johannes Josephus Van Dijsseldonk , Hans Van Der Laan , Diederik Jan Maas
CPC分类号： G03F7/70291 , G03F7/70208 , G03F7/70941
摘要： A lithographic projection apparatus including a support structure configured to support a patterning device, the patterning device configured to impart a beam of radiation with a pattern in its cross-section; a substrate holder configured to hold a substrate; a projection system configured to expose the patterned beam of radiation on a target portion of the substrate; and a system configured to compensate one or more perturbation factors by providing an additional beam of radiation to be exposed on the target portion of the substrate, the additional beam of radiation being imparted in its cross-section with an additional pattern which is based on the pattern of the patterning device and on lithographic projection apparatus property data, the lithographic projection apparatus property data characterizing a level and nature of one or more systematic perturbation factors of different lithographic apparatus.
摘要翻译： 一种光刻投影设备，包括被配置为支撑图案形成装置的支撑结构，所述图案形成装置被配置为在其横截面中赋予图案的辐射束; 衬底保持器，其构造成保持衬底; 投影系统，被配置为将所述图案化的辐射束暴露在所述基板的目标部分上; 以及被配置为通过提供待暴露在所述基板的目标部分上的另外的辐射束来补偿一个或多个扰动因子的系统，所述附加辐射束在其横截面中被赋予附加图案，所述另外的图案基于 图案形成装置的图案和光刻投影装置的属性数据，光刻投影装置的属性数据表征不同光刻装置的一个或多个系统扰动因子的水平和性质。
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2.发明申请公开(公告)号：US20100321657A1
公开(公告)日：2010-12-23
申请号：US12741960
申请日：2008-11-07
申请人： Jan Bernard Plechelmus VAN SCHOOT , Diederik Jan Maas , Antonius Johannes Josephus Van Dijsseldonk , Hans Van Der Laan
发明人： Jan Bernard Plechelmus VAN SCHOOT , Diederik Jan Maas , Antonius Johannes Josephus Van Dijsseldonk , Hans Van Der Laan
IPC分类号： G03B27/52
CPC分类号： G03F7/70291 , G03F7/70208 , G03F7/70941
摘要： A lithographic projection apparatus including a support structure configured to support a patterning device, the patterning device configured to impart a beam of radiation with a pattern in its cross-section; a substrate holder configured to hold a substrate; a projection system configured to expose the patterned beam of radiation on a target portion of the substrate; and a system configured to compensate one or more perturbation factors by providing an additional beam of radiation to be exposed on the target portion of the substrate, the additional beam of radiation being imparted in its cross-section with an additional pattern which is based on the pattern of the patterning device and on lithographic projection apparatus property data, the lithographic projection apparatus property data characterizing a level and nature of one or more systematic perturbation factors of different lithographic apparatus.
摘要翻译： 一种光刻投影设备，包括被配置为支撑图案形成装置的支撑结构，所述图案形成装置被配置为在其横截面中赋予图案的辐射束; 衬底保持器，其构造成保持衬底; 投影系统，被配置为将所述图案化的辐射束暴露在所述基板的目标部分上; 以及被配置为通过提供待暴露在所述基板的目标部分上的另外的辐射束来补偿一个或多个扰动因子的系统，所述附加辐射束在其横截面中被赋予附加图案，所述另外的图案基于 图案形成装置的图案和光刻投影装置的属性数据，光刻投影装置的属性数据表征不同光刻装置的一个或多个系统扰动因子的水平和性质。
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公开(公告)号：US20090047604A1
公开(公告)日：2009-02-19
申请号：US11889722
申请日：2007-08-15
申请人： Judocus Marie Dominicus Stoeldraijer , Erik Roelof Loopstra , Jan Bernard Plechelmus Van Schoot , Diederik Jan Maas
发明人： Judocus Marie Dominicus Stoeldraijer , Erik Roelof Loopstra , Jan Bernard Plechelmus Van Schoot , Diederik Jan Maas
CPC分类号： G03F7/7045 , G03F7/70425 , G03F7/70466 , G03F7/70733 , G03F7/70991
摘要： A lithographic apparatus and method is disclosed to reduce the exposure time that a substrate spends within a main lithographic apparatus by pre- (or post-) exposing one or more edge devices on the substrate. Because an edge device does not ultimately yield a useful device, it can be exposed with a lithographic apparatus that has a lower resolution than that used to expose one or more of the other, complete devices produced from the substrate. Therefore, the pre- (or post-) exposure of an edge device can be performed using a less complex, and less expensive, lithographic device.
摘要翻译： 公开了一种光刻设备和方法，以通过预先（或后）暴露基板上的一个或多个边缘设备来减少基板在主平版印刷设备内花费的曝光时间。 因为边缘装置最终不会产生有用的装置，所以可以用光刻设备曝光，该光刻设备的分辨率比用于暴露从基板产生的一个或多个其它完整装置的分辨率低。 因此，可以使用较不复杂和较便宜的光刻设备来执行边缘设备的预曝光（或后曝光）。
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公开(公告)号：US08896809B2
公开(公告)日：2014-11-25
申请号：US11889722
申请日：2007-08-15
申请人： Judocus Marie Dominicus Stoeldraijer , Erik Roelof Loopstra , Jan Bernard Plechelmus Van Schoot , Diederik Jan Maas
发明人： Judocus Marie Dominicus Stoeldraijer , Erik Roelof Loopstra , Jan Bernard Plechelmus Van Schoot , Diederik Jan Maas
CPC分类号： G03F7/7045 , G03F7/70425 , G03F7/70466 , G03F7/70733 , G03F7/70991
摘要： A lithographic apparatus and method is disclosed to reduce the exposure time that a substrate spends within a main lithographic apparatus by pre- (or post-) exposing one or more edge devices on the substrate. Because an edge device does not ultimately yield a useful device, it can be exposed with a lithographic apparatus that has a lower resolution than that used to expose one or more of the other, complete devices produced from the substrate. Therefore, the pre- (or post-) exposure of an edge device can be performed using a less complex, and less expensive, lithographic device.
摘要翻译： 公开了一种光刻设备和方法，以通过预先（或后）暴露基板上的一个或多个边缘设备来减少基板在主平版印刷设备内花费的曝光时间。 因为边缘装置最终不会产生有用的装置，所以可以用光刻设备曝光，该光刻设备的分辨率比用于暴露从基板产生的一个或多个其它完整装置的分辨率低。 因此，可以使用较不复杂和较便宜的光刻设备来执行边缘设备的预曝光（或后曝光）。
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公开(公告)号：US09567671B2
公开(公告)日：2017-02-14
申请号：US14237577
申请日：2012-07-30
申请人： Raymond Jacobus Wilhelmus Knaapen , Ruud Olieslagers , Dennis Van Den Berg , Matijs C. Van Den Boer , Diederik Jan Maas , Jacques Cor Johan Van Der Donck , Freddy Roozeboom
发明人： Raymond Jacobus Wilhelmus Knaapen , Ruud Olieslagers , Dennis Van Den Berg , Matijs C. Van Den Boer , Diederik Jan Maas , Jacques Cor Johan Van Der Donck , Freddy Roozeboom
IPC分类号： C23C16/455 , C23C16/44 , C23C16/458 , C23C16/52 , C23C16/54
CPC分类号： C23C16/45589 , C23C16/4401 , C23C16/4409 , C23C16/45517 , C23C16/45525 , C23C16/45536 , C23C16/45551 , C23C16/45578 , C23C16/45587 , C23C16/4586 , C23C16/4588 , C23C16/52 , C23C16/545
摘要： Method of depositing an atomic layer on a substrate. The method comprises supplying a precursor gas from a precursor-gas supply of a deposition head that may be part of a rotatable drum. The precursor gas is provided from the precursor-gas supply towards the substrate. The method further comprises moving the precursor-gas supply by rotating the deposition head along the substrate which in its turn is moved along the rotating drum. The method further comprises switching between supplying the precursor gas from the precursor-gas supply towards the substrate over a first part of the rotation trajectory; and interrupting supplying the precursor gas from the precursor-gas supply over a second part of the rotation trajectory.
摘要翻译： 在基板上沉积原子层的方法。 该方法包括从可以是可旋转滚筒的一部分的沉积头的前体气体供应源供应前体气体。 前体气体从前体气体供应源朝向基底提供。 该方法还包括通过沿着衬底旋转沉积头来移动前体气体源，衬底又沿旋转鼓移动。 该方法还包括在旋转轨迹的第一部分上将来自前体气体供应的前体气体供给朝向基底的切换; 并且中断在旋转轨迹的第二部分上从前体气体供应源提供前体气体。
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公开(公告)号：US11549180B2
公开(公告)日：2023-01-10
申请号：US13060435
申请日：2009-08-25
申请人： Diederik Jan Maas , Bob van Someren , Axel Sebastiaan Lexmond , Carolus Ida Maria Antonius Spee , Antonie Ellert Duisterwinkel , Adrianus Johannes Petrus Maria Vermeer
发明人： Diederik Jan Maas , Bob van Someren , Axel Sebastiaan Lexmond , Carolus Ida Maria Antonius Spee , Antonie Ellert Duisterwinkel , Adrianus Johannes Petrus Maria Vermeer
IPC分类号： C23C16/455 , C23C16/54
摘要： Apparatus for atomic layer deposition on a surface of a substrate includes a precursor injector head. The precursor injector head includes a precursor supply and a deposition space that in use is bounded by the precursor injector head and the substrate surface. The precursor injector head is arranged for injecting a precursor gas from the precursor supply into the deposition space for contacting the substrate surface. The apparatus is arranged for relative motion between the deposition space and the substrate in a plane of the substrate surface. The apparatus is provided with a confining structure arranged for confining the injected precursor gas to the deposition space adjacent to the substrate surface.
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公开(公告)号：US20150086715A1
公开(公告)日：2015-03-26
申请号：US14237577
申请日：2012-07-30
申请人： Raymond Jacobus Wilhelmus Knaapen , Ruud Olieslagers , Dennis Van Den Berg , Matijs C. Van Den Boer , Diederik Jan Maas , Jacques Cor Johan Van Der Donck , Freddy Roozeboom
发明人： Raymond Jacobus Wilhelmus Knaapen , Ruud Olieslagers , Dennis Van Den Berg , Matijs C. Van Den Boer , Diederik Jan Maas , Jacques Cor Johan Van Der Donck , Freddy Roozeboom
IPC分类号： C23C16/455 , C23C16/52
CPC分类号： C23C16/45589 , C23C16/4401 , C23C16/4409 , C23C16/45517 , C23C16/45525 , C23C16/45536 , C23C16/45551 , C23C16/45578 , C23C16/45587 , C23C16/4586 , C23C16/4588 , C23C16/52 , C23C16/545
摘要： Method of depositing an atomic layer on a substrate. The method comprises supplying a precursor gas from a precursor-gas supply of a deposition head that may be part of a rotatable drum. The precursor gas is provided from the precursor-gas supply towards the substrate. The method further comprises moving the precursor-gas supply by rotating the deposition head along the substrate which in its turn is moved along the rotating drum. The method further comprises switching between supplying the precursor gas from the precursor-gas supply towards the substrate over a first part of the rotation trajectory; and interrupting supplying the precursor gas from the precursor-gas supply over a second part of the rotation trajectory
摘要翻译： 在基板上沉积原子层的方法。 该方法包括从可以是可旋转滚筒的一部分的沉积头的前体气体供应源供应前体气体。 前体气体从前体气体供应源朝向基底提供。 该方法还包括通过沿着衬底旋转沉积头来移动前体气体源，衬底又沿旋转鼓移动。 该方法还包括在旋转轨迹的第一部分上将来自前体气体供应的前体气体供给朝向基底的切换; 并且中断在旋转轨迹的第二部分上从前体气体供应源提供前体气体
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公开(公告)号：US08624185B2
公开(公告)日：2014-01-07
申请号：US13233397
申请日：2011-09-15
IPC分类号： H01J37/30
CPC分类号： H01J37/30 , G01N1/286 , H01J2237/31745
摘要： Disclosed are methods for preparing samples that include forming a first channel in a material by directing a first plurality of noble gas ions at the material, forming a second channel in the material by directing a second plurality of noble gas ions at the material, where the second channel is spaced from the first channel so that a portion of the material between channels has a mean thickness of 100 nm or less, and detaching the portion from the material to yield the sample.
摘要翻译： 公开了用于制备样品的方法，其包括通过在材料处引导第一多个惰性气体离子而在材料中形成第一通道，通过在材料处引导第二多个惰性气体离子在材料中形成第二通道， 第二通道与第一通道间隔开，使得通道之间的材料的一部分具有100nm或更小的平均厚度，并且将该部分与材料分离以产生样品。
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公开(公告)号：US20120199737A1
公开(公告)日：2012-08-09
申请号：US13233397
申请日：2011-09-15
CPC分类号： H01J37/30 , G01N1/286 , H01J2237/31745
摘要： Disclosed are methods for preparing samples that include forming a first channel in a material by directing a first plurality of noble gas ions at the material, forming a second channel in the material by directing a second plurality of noble gas ions at the material, where the second channel is spaced from the first channel so that a portion of the material between channels has a mean thickness of 100 nm or less, and detaching the portion from the material to yield the sample.
摘要翻译： 公开了用于制备样品的方法，其包括通过在材料处引导第一多个惰性气体离子而在材料中形成第一通道，通过在材料处引导第二多个惰性气体离子在材料中形成第二通道， 第二通道与第一通道间隔开，使得通道之间的材料的一部分具有100nm或更小的平均厚度，并且将该部分与材料分离以产生样品。
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公开(公告)号：US20120003396A1
公开(公告)日：2012-01-05
申请号：US13060435
申请日：2009-08-25
申请人： Diederik Jan Maas , Bob Van Someren , Axel Sebastiaan Lexmond , Carolus Ida Maria Antonlus Spee , Antonie Ellert Duisterwinkel , Adrianus Johannes Petrus Maria Meer
发明人： Diederik Jan Maas , Bob Van Someren , Axel Sebastiaan Lexmond , Carolus Ida Maria Antonlus Spee , Antonie Ellert Duisterwinkel , Adrianus Johannes Petrus Maria Meer
IPC分类号： C23C16/455 , C23C16/48 , C23C16/50
CPC分类号： C23C16/45551
摘要： Apparatus for atomic layer deposition on a surface of a substrate includes a precursor injector head. The precursor injector head includes a precursor supply and a deposition space that in use is bounded by the precursor injector head and the substrate surface. The precursor injector head is arranged for injecting a precursor gas from the precursor supply into the deposition space for contacting the substrate surface. The apparatus is arranged for relative motion between the deposition space and the substrate in a plane of the substrate surface. The apparatus is provided with a confining structure arranged for confining the injected precursor gas to the deposition space adjacent to the substrate surface.
摘要翻译： 用于原子层沉积在衬底表面上的装置包括前体注入头。 前体注入头包括前体供应源和沉积空间，其在使用中由前体注入头和基底表面限定。 前体注入头被设置用于将前体气体从前体供应源注入到用于接触基底表面的沉积空间中。 该装置设置成在衬底表面的平面中在沉积空间和衬底之间的相对运动。 该装置设置有限制结构，其被布置用于将注入的前体气体限制在与衬底表面相邻的沉积空间。
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