公开(公告)号：US20130005082A1

公开(公告)日：2013-01-03

申请号：US13608981

申请日：2012-09-10

申请人： Do-Hyun KIM ,  Je-Hun LEE ,  Pil-Sang YUN ,  Dong-Hoon LEE ,  Bong-Kyun KIM

发明人： Do-Hyun KIM ,  Je-Hun LEE ,  Pil-Sang YUN ,  Dong-Hoon LEE ,  Bong-Kyun KIM

IPC分类号： H01L21/336

CPC分类号： H01L27/1225 ,  H01L29/7869

摘要： A thin film transistor array substrate having a high charge mobility and that can raise a threshold voltage, and a method of fabricating the thin film transistor array substrate are provided. The thin film transistor array substrate includes: an insulating substrate; a gate electrode formed on the insulating substrate; an oxide semiconductor layer comprising a lower oxide layer formed on the gate electrode and an upper oxide layer formed on the lower oxide layer, such that the oxygen concentration of the upper oxide layer is higher than the oxygen concentration of the lower oxide layer; and a source electrode and a drain electrode formed on the oxide semiconductor layer and separated from each other.

摘要翻译： 提供具有高电荷迁移率并且可以提高阈值电压的薄膜晶体管阵列基板，以及制造薄膜晶体管阵列基板的方法。 薄膜晶体管阵列基板包括：绝缘基板; 形成在所述绝缘基板上的栅电极; 氧化物半导体层，其包括形成在所述栅电极上的低氧化物层和形成在所述低氧化物层上的上氧化物层，使得所述上氧化物层的氧浓度高于所述低氧化物层的氧浓度; 以及形成在氧化物半导体层上并且彼此分离的源电极和漏电极。

公开(公告)号：US20100149476A1

公开(公告)日：2010-06-17

申请号：US12534300

申请日：2009-08-03

申请人： Do-Hyun KIM ,  Jong-Hyun CHOUNG ,  Young-Joo CHOI ,  Hong-Sick PARK ,  Tae-Hyung IHN ,  Dong-Hoon LEE ,  Pil-Sang YUN ,  Je-Hyeong PARK ,  Chang-Oh JEONG ,  Je-Hun LEE ,  Sun-Young HONG ,  Bong-Kyun KIM ,  Byeong-Jin LEE ,  Nam-Seok SUH

发明人： Do-Hyun KIM ,  Jong-Hyun CHOUNG ,  Young-Joo CHOI ,  Hong-Sick PARK ,  Tae-Hyung IHN ,  Dong-Hoon LEE ,  Pil-Sang YUN ,  Je-Hyeong PARK ,  Chang-Oh JEONG ,  Je-Hun LEE ,  Sun-Young HONG ,  Bong-Kyun KIM ,  Byeong-Jin LEE ,  Nam-Seok SUH

IPC分类号： G02F1/1333 ,  B05D5/12 ,  B44C1/22

CPC分类号： G02F1/136286 ,  G02F2001/133302 ,  G02F2001/136295

摘要： A display substrate includes; a base substrate, a deformation preventing layer disposed on a lower surface of the base substrate, wherein the deformation preventing layer applies a force to the base substrate to prevent the base substrate from bending, a gate line disposed on an upper surface of the base substrate, a data line disposed on the base substrate, and a pixel electrode disposed on the base substrate.

摘要翻译： 显示基板包括： 基底基板，设置在基底基板的下表面的变形防止层，其中变形防止层向基底基板施加力以防止基底基板弯曲，设置在基底基板的上表面上的栅极线 设置在基底基板上的数据线，以及配置在基底基板上的像素电极。

公开(公告)号：US20100155715A1

公开(公告)日：2010-06-24

申请号：US12393521

申请日：2009-02-26

申请人： Pil-Sang YUN ,  Do-Hyun KIM ,  Byeong-Beom KIM ,  Bong-Kyun KIM

发明人： Pil-Sang YUN ,  Do-Hyun KIM ,  Byeong-Beom KIM ,  Bong-Kyun KIM

IPC分类号： H01L33/00 ,  H01L21/336

CPC分类号： H01L27/12 ,  G02F1/1368 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/78642

摘要： A display substrate according to the present invention comprises a gate line formed on a substrate. a data line, a thin film transistor connected to the gate line and the data line respectively and pixel electrode connected to the thin film transistor, wherein a channel of the thin film transistor is formed in a direction perpendicular to the substrate and, a layer where the channel is formed includes an oxide semiconductor pattern. ON current of thin film transistor of the display substrate can be increased without loss of aperture ratio.

摘要翻译： 根据本发明的显示基板包括形成在基板上的栅极线。 数据线，连接到栅极线和数据线的薄膜晶体管以及与薄膜晶体管连接的像素电极，其中薄膜晶体管的沟道在垂直于衬底的方向上形成，层 沟道形成包括氧化物半导体图案。 可以在不损失开口率的情况下增加显示基板的薄膜晶体管的导通电流。

公开(公告)号：US20110193076A1

公开(公告)日：2011-08-11

申请号：US12957743

申请日：2010-12-01

申请人： Pil-Sang YUN ,  Ki-Won KIM ,  Hye-Young RYU ,  Woo-Geun LEE ,  Seung-Ha CHOI ,  Jae-Hyoung YOUN ,  Kyoung-Jae CHUNG ,  Young-Wook LEE ,  Je-Hun LEE ,  Kap-Soo YOON ,  Do-Hyun KIM ,  Dong-Ju YANG ,  Young-Joo CHOI

发明人： Pil-Sang YUN ,  Ki-Won KIM ,  Hye-Young RYU ,  Woo-Geun LEE ,  Seung-Ha CHOI ,  Jae-Hyoung YOUN ,  Kyoung-Jae CHUNG ,  Young-Wook LEE ,  Je-Hun LEE ,  Kap-Soo YOON ,  Do-Hyun KIM ,  Dong-Ju YANG ,  Young-Joo CHOI

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L29/41733 ,  H01L21/44 ,  H01L21/441 ,  H01L21/465 ,  H01L21/475 ,  H01L21/47573 ,  H01L21/47635 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/127 ,  H01L27/1288 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869 ,  H01L29/78696

摘要： A thin film transistor panel includes an insulating substrate, a gate insulating layer disposed on the insulating substrate, an oxide semiconductor layer disposed on the gate insulating layer, an etch stopper disposed on the oxide semiconductor layer, and a source electrode and a drain electrode disposed on the etch stopper.

摘要翻译： 薄膜晶体管面板包括绝缘基板，设置在绝缘基板上的栅极绝缘层，设置在栅极绝缘层上的氧化物半导体层，设置在氧化物半导体层上的蚀刻停止器，以及设置在源极电极和漏极上的 在蚀刻停止器上。

公开(公告)号：US20100148169A1

公开(公告)日：2010-06-17

申请号：US12498816

申请日：2009-07-07

申请人： Do-Hyun KIM ,  Pil-Sang YUN ,  Ki-Won KIM ,  Dong-Hoon LEE ,  Chang-Oh JEONG

发明人： Do-Hyun KIM ,  Pil-Sang YUN ,  Ki-Won KIM ,  Dong-Hoon LEE ,  Chang-Oh JEONG

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L29/7869 ,  H01L27/12 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/78618

摘要： A thin-film transistor (TFT) substrate has improved electrical properties and reduced appearance defects and a method of fabricating the TFT substrate, are provided. The TFT substrate includes: gate wiring which is formed on a surface of an insulating substrate; oxide active layer patterns which are formed on the gate wiring and include an oxide of a first material; buffer layer patterns which are disposed on the oxide active layer patterns to directly contact the oxide active layer patterns and include a second material; and data wiring which is formed on the buffer layer patterns to insulatedly cross the gate wiring, wherein a Gibbs free energy of the oxide of the first material is lower than a Gibbs free energy of an oxide of the second material.

摘要翻译： 薄膜晶体管（TFT）基板具有改善的电性能和减少的外观缺陷以及制造TFT基板的方法。 TFT基板包括：形成在绝缘基板的表面上的栅极布线; 氧化物活性层图案，其形成在栅极布线上并且包括第一材料的氧化物; 缓冲层图案，其设置在所述氧化物活性层图案上以直接接触所述氧化物活性层图案并且包括第二材料; 以及形成在所述缓冲层图案上以绝缘地穿过所述栅极布线的数据布线，其中所述第一材料的氧化物的吉布斯自由能低于所述第二材料的氧化物的吉布斯自由能。

公开(公告)号：US20110147740A1

公开(公告)日：2011-06-23

申请号：US12977853

申请日：2010-12-23

申请人： Ki-Hun JEONG ,  Do-Hyun KIM ,  Dong-Hoon LEE ,  Kap-Soo YOON ,  Jae-Ho CHOI ,  Sung-Hoon YANG ,  Pil-Sang YUN ,  Seung-Mi SEO

发明人： Ki-Hun JEONG ,  Do-Hyun KIM ,  Dong-Hoon LEE ,  Kap-Soo YOON ,  Jae-Ho CHOI ,  Sung-Hoon YANG ,  Pil-Sang YUN ,  Seung-Mi SEO

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L29/7869 ,  H01L29/78606 ,  H01L29/78633

摘要： The present invention discloses a thin film transistor (TFT), a method for manufacturing the TFT, and a display substrate using the TFT that may prevent degradation of the characteristics of an oxide semiconductor contained in the TFT by blocking external light from entering a channel region of the oxide semiconductor. The TFT comprises an oxide semiconductor layer; a protective layer disposed on the oxide semiconductor layer and overlapping a channel region of the oxide semiconductor layer; an opaque layer disposed between the oxide semiconductor layer and the protective layer; a source electrode contacting a first side of the oxide semiconductor layer; a drain electrode contacting a second side of the oxide semiconductor layer and facing the source electrode with the channel region disposed between the drain electrode and the source electrode; a gate electrode to apply an electric field to the oxide semiconductor layer; and a gate insulating layer disposed between the gate electrode and the oxide semiconductor layer.

摘要翻译： 本发明公开了一种薄膜晶体管（TFT），TFT的制造方法以及使用该TFT的显示基板，其可以防止外部光阻挡进入沟道区域而使TFT中包含的氧化物半导体的特性劣化 的氧化物半导体。 TFT包括氧化物半导体层; 保护层，设置在所述氧化物半导体层上并与所述氧化物半导体层的沟道区域重叠; 设置在所述氧化物半导体层和所述保护层之间的不透明层; 与氧化物半导体层的第一面接触的源电极; 与所述氧化物半导体层的第二面接触且与所述源电极相对的漏电极，所述沟道区域设置在所述漏电极和所述源电极之间; 用于向氧化物半导体层施加电场的栅电极; 以及设置在栅电极和氧化物半导体层之间的栅极绝缘层。

公开(公告)号：US20100155721A1

公开(公告)日：2010-06-24

申请号：US12645433

申请日：2009-12-22

申请人： Je-Hun LEE ,  Tae-Hyung IHN ,  Dong-Hoon LEE ,  Do-Hyun KIM

发明人： Je-Hun LEE ,  Tae-Hyung IHN ,  Dong-Hoon LEE ,  Do-Hyun KIM

IPC分类号： H01L29/786 ,  H01L21/34

CPC分类号： H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L27/1225

摘要： A thin film transistor (TFT) array substrate is provided. The thin film transistor (TFT) array substrate includes an insulating substrate, an oxide semiconductor layer formed on the insulating substrate and including an additive element, a gate electrode overlapping the oxide semiconductor layer, and a gate insulating layer interposed between the oxide semiconductor layer and the gate electrode, wherein the oxygen bond energy of the additive element is greater than that of a base element of the oxide semiconductor layer.

摘要翻译： 提供薄膜晶体管（TFT）阵列基板。 薄膜晶体管（TFT）阵列基板包括绝缘基板，形成在绝缘基板上并包括添加元件的氧化物半导体层，与氧化物半导体层重叠的栅极电极以及介于氧化物半导体层和 所述栅电极，其中所述添加元素的氧键能量大于所述氧化物半导体层的基体元素的氧键能。

公开(公告)号：US20120211753A1

公开(公告)日：2012-08-23

申请号：US13328658

申请日：2011-12-16

申请人： Ki-Won KIM ,  Je-Hun LEE ,  Sung-Haeng CHO ,  Woo-Geun LEE ,  Kap-Soo YOON ,  Do-Hyun KIM ,  Seung-Ha CHOI

发明人： Ki-Won KIM ,  Je-Hun LEE ,  Sung-Haeng CHO ,  Woo-Geun LEE ,  Kap-Soo YOON ,  Do-Hyun KIM ,  Seung-Ha CHOI

IPC分类号： H01L29/786 ,  H01L21/336 ,  H01L33/00

CPC分类号： H01L27/1225 ,  H01L27/1288

摘要： In a display substrate and a method of manufacturing the display substrate, the display substrate includes a data line, a channel pattern, an insulating pattern and a pixel electrode. The data line extends in a direction on a base substrate. The channel pattern is disposed in a separate region between an input electrode connected to the data line and an output electrode spaced apart from the input electrode. The channel pattern makes contact with the input electrode and the output electrode on the input and output electrodes. The insulating pattern is spaced apart from the channel pattern on the base substrate and includes a contact hole exposing the output electrode. The pixel electrode is formed on the insulating pattern to make contact with the output electrode through the contact hole. Thus, a damage of the oxide semiconductor layer may be minimized and a manufacturing process may be simplified.

摘要翻译： 在显示基板和显示基板的制造方法中，显示基板包括数据线，通道图案，绝缘图案和像素电极。 数据线沿着基底基板上的方向延伸。 通道图案设置在与数据线连接的输入电极和与输入电极间隔开的输出电极之间的分离区域中。 通道图案与输入电极和输出电极上的输出电极接触。 绝缘图案与基底基板上的沟道图案间隔开，并且包括暴露输出电极的接触孔。 像素电极形成在绝缘图案上，以通过接触孔与输出电极接触。 因此，可以使氧化物半导体层的损伤最小化，并且可以简化制造工艺。

公开(公告)号：US20110140103A1

公开(公告)日：2011-06-16

申请号：US13030213

申请日：2011-02-18

申请人： Je-Hun LEE ,  Do-Hyun KIM ,  Eun-Guk LEE ,  Chang-OH JEONG

发明人： Je-Hun LEE ,  Do-Hyun KIM ,  Eun-Guk LEE ,  Chang-OH JEONG

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L29/7869 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1288

摘要： A thin-film transistor includes a semiconductor pattern, source and drain electrodes and a gate electrode, the semiconductor pattern is formed on a base substrate, and the semiconductor pattern includes metal oxide. The source and drain electrodes are formed on the semiconductor pattern such that the source and drain electrodes are spaced apart from each other and an outline of the source and drain electrodes is substantially same as an outline of the semiconductor pattern. The gate electrode is disposed in a region between the source and drain electrodes such that portions of the gate electrode are overlapped with the source and drain electrodes. Therefore, leakage current induced by light is minimized. As a result, characteristics of the thin-film transistor are enhanced, after-image is reduced to enhance display quality, and stability of manufacturing process is enhanced.

摘要翻译： 薄膜晶体管包括半导体图案，源极和漏极以及栅极，半导体图案形成在基底基板上，半导体图案包括金属氧化物。 源极和漏极形成在半导体图案上，使得源极和漏极彼此间隔开，并且源极和漏极的轮廓与半导体图案的轮廓基本相同。 栅电极设置在源电极和漏电极之间的区域中，使得栅电极的一部分与源电极和漏电极重叠。 因此，由光引起的漏电流最小化。 结果，增强了薄膜晶体管的特性，减少了后图像以提高显示质量，并且提高了制造工艺的稳定性。

公开(公告)号：US20100051935A1

公开(公告)日：2010-03-04

申请号：US12509893

申请日：2009-07-27

申请人： Je-Hun LEE ,  Do-Hyun KIM

发明人： Je-Hun LEE ,  Do-Hyun KIM

IPC分类号： H01L33/00

CPC分类号： H01L27/1225 ,  G02F1/136286 ,  G02F1/1368 ,  H01L29/41733 ,  H01L29/78606 ,  H01L29/7869

摘要： A liquid crystal display and a method of manufacturing the same are provided. The liquid crystal display includes an insulating substrate, a gate electrode formed on the insulating substrate, an oxide semiconductor layer formed on the gate electrode, an etch stopper formed on the oxide semiconductor layer in a channel area, a common electrode formed on the insulating substrate, source and drain electrodes separated from each other on the etch stopper and extending to an upper portion of the oxide semiconductor layer, a passivation layer formed on the etch stopper, the common electrode, the source and drain electrodes, and a pixel electrode formed on the passivation layer and connected to the drain electrode.

摘要翻译： 提供一种液晶显示器及其制造方法。 液晶显示器包括绝缘基板，形成在绝缘基板上的栅电极，形成在栅电极上的氧化物半导体层，形成在沟道区中的氧化物半导体层上的蚀刻停止层，形成在绝缘基板上的公共电极 ，源电极和漏电极在蚀刻停止器上彼此分离并延伸到氧化物半导体层的上部，形成在蚀刻停止器上的钝化层，公共电极，源极和漏极以及形成在其上的像素电极 钝化层并连接到漏电极。