Semiconductor laser with internal reflectors and vertical output
    1.
    发明授权
    Semiconductor laser with internal reflectors and vertical output 失效
    半导体激光器具有内部反射器和垂直输出

    公开(公告)号:US4633476A

    公开(公告)日:1986-12-30

    申请号:US672297

    申请日:1984-11-16

    摘要: A heterostructure semiconductor laser emitting light in a direction vertical to the horizontal active layer has one or more internal reflectors for feedback. Angled reflectors, in the form of grooves etched at an angle exceeding the angle of total internal reflection through the layers, totally internally reflect light out of the laser. One or more of the following feedback constructions are used separately or in combination to provide low threshold current and frequency selection. Insulating windows may be put on the grooves. A periodic grating on a layer adjacent the active layer provides distributed feedback. A plurality of thin dielectric layers placed next to the active layer reflect light back into the active layer. Two parallel integral feedback facets crossing vertically through the active layer act as planar mirrors.

    摘要翻译: 在垂直于水平有源层的方向上发射光的异质结构半导体激光器具有用于反馈的一个或多个内部反射器。 倾斜的反射器以以超过通过层的全内反射角度的角度蚀刻的凹槽的形式全部内部反射出激光。 以下反馈结构中的一个或多个单独地或组合使用以提供低阈值电流和频率选择。 绝缘窗可以放在凹槽上。 与有源层相邻的层上的周期性光栅提供分布式反馈。 放置在有源层旁边的多个薄电介质层将光反射回有源层。 两个平行的积分反馈小平面垂直穿过有源层,作为平面反射镜。

    Diode laser arrangement forming bright image
    2.
    发明授权
    Diode laser arrangement forming bright image 失效
    二极管激光布置形成明亮的图像

    公开(公告)号:US4826269A

    公开(公告)日:1989-05-02

    申请号:US109824

    申请日:1987-10-16

    摘要: A plurality of diode lasers is focussed onto a single region by arranging the diodes at equally spaced locations on a first arc. Each diode laser emits light in a slit-like pattern which is characterized by orthogonal axes. In a first group of cylindrical lenses, one associated with each diode laser, each lens has a refractive surface having an axis parallel to one of the emitting axes of the laser and refracts light to a focal region of defined dimensions. Each cylindrical lens is disposed along a second arc having a circular center common with the first arc. A second group of cylindrical lenses, one associated with each laser, is also disposed on a circular arc, concentric with the other arcs, but the second group has a refractive axis perpendicular to the first refractive axis. The second group of cylindrical lenses acts upon the second axis of the source image, focussing it to the common focal region. The first and second cylindrical lens groups may be combined into a toric surface within a single lens. The cylindrical lenses may either be individual lenses, or may be combined into a lenticular array. The lenses may be simple cylindrical refractive lenses, Fresnel lenses, or holographic lenses. A bright image of the source is formed at the common focal region. The diode lasers and cylindrical lenses may be arranged in three dimensions to produce very high optical power densities.

    摘要翻译: 多个二极管激光器通过将二极管布置在第一弧上等间隔的位置而聚焦在单个区域上。 每个二极管激光器以正交轴为特征的狭缝状图案发光。 在第一组柱面透镜中,每个透镜都与每个二极管激光器相关联,每个透镜具有折射表面,该折射表面具有平行于激光器的一个发射轴的轴线,并将光折射到限定尺寸的焦点区域。 每个柱面透镜沿着具有与第一弧共同的圆形中心的第二弧设置。 与每个激光器相关联的第二组柱面透镜也设置在与其它弧同心的圆弧上,但是第二组具有垂直于第一折射轴的折射轴。 第二组柱面透镜作用于源图像的第二轴,将其聚焦到公共焦点区域。 第一和第二柱面透镜组可以组合成单个透镜内的复曲面。 柱面透镜可以是单独的透镜,或者可以组合成透镜阵列。 透镜可以是简单的圆柱形折射透镜,菲涅尔透镜或全息透镜。 在公共焦点区域形成源的明亮图像。 二极管激光器和柱面透镜可以三维布置以产生非常高的光功率密度。

    Stacked diode laser array assembly
    3.
    发明授权
    Stacked diode laser array assembly 失效
    堆叠二极管激光阵列组件

    公开(公告)号:US4716568A

    公开(公告)日:1987-12-29

    申请号:US859058

    申请日:1986-05-01

    摘要: A diode laser array assembly made from a plurality of linear diode laser array subassemblies stacked one above the other. Each subassembly is an array of individual laser beam emitters, such as a laser bar, mounted on a support plate. An electrically conductive path goes from one major surface of a support plate, through the linear laser array, to an opposite major surface of the support plate. Each subassembly is connected physically and electrically to adjacent subassemblies to form the final assembly. In one embodiment, the support plates are electrically insulating and partly coated or covered with conducting material. The plates are either rectangular with projections and directly connected, rectangular with metal plates between each other, or rectangular and connected in a staircase configuration. Alternatively, the support plates may be electrically conducting with an insulating layer and a conducting layer disposed in a sandwich configuration. The plates may also be made up of an electrically insulating support plate and an electrically conducting spacer plate.

    摘要翻译: 由多个线性二极管激光器阵列组件制成的二极管激光器阵列组件,其一个堆叠在另一个之上。 每个子组件是安装在支撑板上的各个激光束发射器(例如激光棒)的阵列。 导电路径从支撑板的一个主表面通过线性激光器阵列移动到支撑板的相对主表面。 每个子组件物理和电连接到相邻的子组件以形成最终组件。 在一个实施例中,支撑板是电绝缘的并且部分地涂覆或用导电材料覆盖。 这些板是矩形的,具有突起并且直接连接,矩形,金属板彼此之间或矩形并且以阶梯结构连接。 或者,支撑板可以导电,绝缘层和以夹层结构设置的导电层。 板也可以由电绝缘支撑板和导电间隔板组成。

    Schottky barrier photovoltaic detector
    4.
    发明授权
    Schottky barrier photovoltaic detector 失效
    肖特基势垒光电探测器

    公开(公告)号:US4319258A

    公开(公告)日:1982-03-09

    申请号:US128325

    申请日:1980-03-07

    摘要: A platinum-cadmium sulfide Schottky barrier photovoltaic detector which is capable of sensing near ultraviolet and short wavelength visible radiation with extremely small response to wavelengths longer than about 5200 angstroms. The detector is fabricated with both the ohmic and barrier contacts located on the same side of the cadmium sulfide substrate to facilitate wire attachment by high-speed bonding techniques. A titanium-gold-titanium infrared shield structure is deposited directly on the substrate and is utilized to provide a connection between the ohmic contact and the substrate. An insulating layer of silicon dioxide covers the shield structure. A thin layer of platinum is deposited directly on the substrate in a small central optically active area surrounded by the insulated shield structure. A metal boundary layer overlies the periphery of the platinum layer and prevents the barrier contact metalization from affecting the properties of the Schottky barrier. Both the ohmic and barrier contacts may be formed of a titanium adhesive layer and a layer of gold. The gold portions of these contacts touch the shield structure and the boundary layer through separate windows etched in the silicon dioxide insulating layer.

    摘要翻译: 一种铂 - 硫化镉硫化物肖特基势垒光伏检测器,能够感测近紫外和短波长的可见光辐射,响应波长远大于约5200埃。 该检测器由位于硫化镉基板的同一侧上的欧姆和阻挡触点制成,以便于通过高速接合技术进行电线连接。 钛 - 金 - 钛红外屏蔽结构直接沉积在衬底上,并用于提供欧姆接触和衬底之间的连接。 二氧化硅的绝缘层覆盖屏蔽结构。 在由绝缘屏蔽结构围绕的小的中心光学活性区域中,将薄的铂层直接沉积在衬底上。 金属边界层覆盖铂层周边,防止屏障接触金属化影响肖特基势垒的性质。 欧姆和阻挡触点都可以由钛粘合剂层和金层形成。 这些触点的金部分通过在二氧化硅绝缘层中蚀刻的分开的窗口接触屏蔽结构和边界层。

    Solid state radiation detector and process
    5.
    发明授权
    Solid state radiation detector and process 失效
    固体辐射探测器和工艺

    公开(公告)号:US4000502A

    公开(公告)日:1976-12-28

    申请号:US413083

    申请日:1973-11-05

    摘要: A radiation detector that combines the characteristics of high quantum efficiency in the UV spectrum with good IR transmission characteristics so that it may be used in association with an IR sensor to produce a coaxial transducer suitable for use in association with unfiltered, high-resolution optics. The detector is a solid state photovoltaic Schottky barrier semi-conductor junction comprising a thin platinum layer laid over single-crystal cadmium sulfide. Processing, including lapping, polishing, and chemical etch, produces a surface suitable for providing radiation sensitivity which drops off sharply outside of the ultraviolet spectrum beyond 550 nanometers. The platinum layer is approximately 35 angstroms in thickness and is therefore transparent both to ultraviolet and infrared radiation. The infrared radiation passes through the cadmium sulfide wafer and through a window in the indium ohmic contact surface on the second surface of the cadmium sulfide crystal. An infrared sensor positioned in association with this window will be exposed to up to 85% of the incident infrared radiation.

    摘要翻译: 一种辐射检测器,其结合了紫外光谱中的高量子效率的特性和良好的红外透射特性,使得其可以与IR传感器相关联使用,以产生适用于与未过滤的高分辨率光学器件相关联的同轴传感器。 检测器是一种固态光伏肖特基势垒半导体结,其中包含一层薄铂层,放在单晶硫化镉上。 包括研磨,抛光和化学蚀刻在内的加工产生了适合于提供超过550纳米的紫外光谱之外急剧下降的辐射敏感性的表面。 铂层的厚度约为35埃,因此对紫外线和红外辐射都是透明的。 红外辐射通过硫化镉晶片,并穿过硫化镉晶体的第二表面上的铟欧姆接触表面的窗口。 与该窗口相关联的红外传感器将暴露于高达入射红外辐射的85%。

    Ribbed submounts for two dimensional stacked laser array
    6.
    发明授权
    Ribbed submounts for two dimensional stacked laser array 失效
    用于二维堆叠激光阵列的带肋底座

    公开(公告)号:US5099488A

    公开(公告)日:1992-03-24

    申请号:US676758

    申请日:1991-03-27

    IPC分类号: H01S5/02 H01S5/40

    摘要: A laser array submount structure for assembly into a two-dimensional stacked array with precise separation between laser diodes of adjacent submounts. The submount includes a deformable metal layer, such as a soft solder, on one major surface of a laser array support plate. A spacer element having spaced apart ridges is disposed on the opposite major surface. A laser diode array is mounted on a front edge of the support plate. In a cold bonding step, submounts are pressed together causing ridges to penetrate the deformable metal layer to a specified depth. The displaced metal spreads into channels between the ridges, allowing pressing of multiple laser array submounts into stackes of precise total tolerance.

    摘要翻译: 激光阵列底座结构,用于组装成相邻底座的激光二极管之间的精确分离的二维堆叠阵列。 底座在激光阵列支撑板的一个主表面上包括可变形金属层,例如软焊料。 具有间隔开的脊的间隔元件设置在相对的主表面上。 激光二极管阵列安装在支撑板的前边缘上。 在冷粘合步骤中,副安装座被压在一起,导致脊部将可变形的金属层穿透到指定的深度。 移位的金属扩散到脊之间的通道中,允许将多个激光阵列底座压入精确的总容差的堆叠中。

    Navigation instrument
    7.
    发明授权
    Navigation instrument 失效
    导航仪

    公开(公告)号:US3967098A

    公开(公告)日:1976-06-29

    申请号:US568162

    申请日:1975-04-14

    IPC分类号: G01C21/22 B64D45/04

    CPC分类号: G01C21/22

    摘要: A digital navigation instrument primarily intended for the general aviation pilot. The navigation instrument combines the functions of a calculator and a stopwatch and provides a method of easy reference to a navigation chart. The resulting unit provides ease of data entry from the navigation chart and ease of alternation between time interval measurement and arithmetic calculations.

    摘要翻译: 主要用于通用航空飞行员的数字导航仪。 导航仪结合了计算器和秒表的功能,并提供了一种简单参考导航图的方法。 所得到的单元从导航图提供数据输入的容易程度,并且易于在时间间隔测量和算术计算之间进行交替。

    Process of fabricating a Schottky barrier photovoltaic detector
    8.
    发明授权
    Process of fabricating a Schottky barrier photovoltaic detector 失效
    制造肖特基势垒光伏检测器的工艺

    公开(公告)号:US4355456A

    公开(公告)日:1982-10-26

    申请号:US281258

    申请日:1981-07-08

    摘要: A platinum-cadmium sulfide Schottky barrier photovoltaic detector which is capable of sensing near ultraviolet and short wavelength visible radiation with extremely small response to wavelengths longer than about 5200 angstroms. The detector is fabricated with both the ohmic and barrier contacts located on the same side of the cadmium sulfide substrate to facilitate wire attachment by high-speed bonding techniques. A titanium-gold-titanium infrared shield structure is deposited directly on the substrate and is utilized to provide a connection between the ohmic contact and the substrate. An insulating layer of silicon dioxide covers the shield structure. A thin layer of platinum is deposited directly on the substrate in a small central optically active area surrounded by the insulated shield structure. A metal boundary layer overlies the periphery of the platinum layer and prevents the barrier contact metalization from affecting the properties of the Schottky barrier. Both the ohmic and barrier contacts may be formed of a titanium adhesion layer and a layer of gold. The gold portions of these contacts touch the shield structure and the boundary layer through separate windows etched in the silicon dioxide insulating layer.

    摘要翻译: 一种铂 - 硫化镉硫化物肖特基势垒光伏检测器,能够感测近紫外和短波长的可见光辐射,响应波长远大于约5200埃。 该检测器由位于硫化镉基板的同一侧上的欧姆和阻挡触点制成,以便于通过高速接合技术进行电线连接。 钛 - 金 - 钛红外屏蔽结构直接沉积在衬底上,并用于提供欧姆接触和衬底之间的连接。 二氧化硅的绝缘层覆盖屏蔽结构。 在由绝缘屏蔽结构围绕的小的中心光学活性区域中,将薄的铂层直接沉积在衬底上。 金属边界层覆盖铂层周边,防止屏障接触金属化影响肖特基势垒的性质。 欧姆和阻挡触点都可以由钛粘合层和金层形成。 这些触点的金部分通过在二氧化硅绝缘层中蚀刻的分开的窗口接触屏蔽结构和边界层。