Vertical thermal processor for semiconductor wafers
    1.
    发明授权
    Vertical thermal processor for semiconductor wafers 失效
    用于半导体晶圆的垂直热处理器

    公开(公告)号:US5000682A

    公开(公告)日:1991-03-19

    申请号:US467937

    申请日:1990-01-22

    IPC分类号: F27D5/00

    CPC分类号: F27D5/0037

    摘要: Semiconductor wafers within a supporting vertical wafer tower are positioned within a vertical process chamber through a lower gate valve fixed to a supporting framework. The gate valve is sealed to a similar gate valve at the upper end of a movable load lock on the framework, within which the wafers are subjected to pre-treatment and post-treatment processes. Two load locks are alternately used in conjunction with the process chamber and a wafer loading station on the framework. In addition, a cleaning element is movably mounted on the framework for periodically maintaining the interior surfaces of the process tube within the process chamber.

    摘要翻译: 支撑垂直晶片塔内的半导体晶片通过固定到支撑框架的下闸阀定位在垂直处理室内。 闸阀在框架上的可移动负载锁的上端处被密封到类似的闸阀,在其中晶片经过预处理和后处理过程。 两个负载锁与框架上的处理室和晶片加载站交替使用。 此外,清洁元件可移动地安装在框架上,用于周期性地将处理管的内表面保持在处理室内。

    ELECTROPLATING APPARATUS HAVING SCROLL PUMP
    2.
    发明申请
    ELECTROPLATING APPARATUS HAVING SCROLL PUMP 审中-公开
    具有滚动泵的电镀设备

    公开(公告)号:US20150014175A1

    公开(公告)日:2015-01-15

    申请号:US13937866

    申请日:2013-07-09

    IPC分类号: C25D17/00 C25D7/12

    摘要: An electroplating apparatus for plating a metal onto a surface of a wafer is disclosed. The apparatus comprises a wafer support configured to support a wafer and a processing base. The processing base has a scroll pump oriented to pump a plating solution in a substantially perpendicular direction with respect to the surface of the wafer. Further, the scroll pump includes a first scroll and a second scroll, at least one of which is configured as an anode. In one embodiment, the processing base includes an anolyte chamber including the scroll pump, a catholyte chamber, and a membrane separating the anolyte chamber from the catholyte chamber.

    摘要翻译: 公开了一种用于将金属镀覆在晶片表面上的电镀设备。 该装置包括构造成支撑晶片和处理基座的晶片支撑件。 处理基座具有定向成相对于晶片表面沿基本上垂直的方向泵送电镀溶液的涡旋泵。 此外,涡旋泵包括第一涡旋件和第二涡旋件,其中至少一个构造为阳极。 在一个实施例中,处理基底包括一个包括涡旋泵,阴极电解液室和一个将阳极电解液室与阴极电解液室隔开的膜的阳极电解液室。

    Process and apparatus for thinning a semiconductor workpiece
    4.
    发明授权
    Process and apparatus for thinning a semiconductor workpiece 失效
    用于使半导体工件变薄的工艺和装置

    公开(公告)号:US07625821B2

    公开(公告)日:2009-12-01

    申请号:US11420591

    申请日:2006-05-26

    IPC分类号: H01L21/302

    摘要: The present invention provides system and apparatus for use in processing wafers. The new system and apparatus allows for the production of thinner wafers that at same time remain strong. As a result, the wafers produced by the present process are less susceptible to breaking. The unique system also offers an improved structure for handling thinned wafers and reduces the number of processing steps. This results in improved yields and improved process efficiency.

    摘要翻译: 本发明提供了用于处理晶片的系统和装置。 新的系统和设备允许生产更薄的晶片,同时保持坚固。 结果,由本方法生产的晶片不易破裂。 独特的系统还提供了一种改进的处理薄化晶片的结构,并减少了处理步骤的数量。 这导致产量提高和工艺效率提高。

    System for processing a workpiece

    公开(公告)号:US06666922B2

    公开(公告)日:2003-12-23

    申请号:US09921845

    申请日:2001-08-02

    IPC分类号: C23C1600

    摘要: An apparatus for processing a workpiece in a micro-environment includes a workpiece housing connected to a motor for rotation. The workpiece housing forms a substantially closed processing chamber where one or more processing fluids are distributed across at least one face of the workpiece by centrifugal force generated during rotation of the housing. Multiple housings may be vertically stacked and rotated about a common rotation axis to simultaneously process multiple workpieces in a small space.

    Reactor for processing a semiconductor wafer

    公开(公告)号:US06447633B1

    公开(公告)日:2002-09-10

    申请号:US09710530

    申请日:2000-11-09

    IPC分类号: C28F102

    摘要: A method for processing a semiconductor wafer or similar article includes the step of spinning the wafer and applying a fluid to a first side of the wafer, while it is spinning. The fluid flows radially outwardly in all directions, over the first side of the wafer, via centrifugal force. As the fluid flows off of the circumferential edge of the wafer, it is contained in an annular reservoir, so that the fluid also flows onto an outer annular area of the second side of the wafer. An opening allows fluid to flow out of the reservoir. The opening defines the location of a parting line beyond which the fluid will not travel on the second side of the wafer. An apparatus for processing a semiconductor wafer or similar article includes a reactor having a processing chamber formed by upper and lower rotors. The wafer is supported between the rotors. The rotors are rotated by a spin motor. A processing fluid is introduced onto the top or bottom surface of the wafer, or onto both surfaces, at a central location. The fluid flows outwardly uniformly and in all directions. A wafer support automatically lifts the wafer, so that it can be removed from the reactor by a robot, when the rotors separate from each other after processing.

    Reactor for processing a microelectronic workpiece
    9.
    发明授权
    Reactor for processing a microelectronic workpiece 失效
    用于处理微电子工件的反应器

    公开(公告)号:US06264752B1

    公开(公告)日:2001-07-24

    申请号:US09113435

    申请日:1998-07-10

    IPC分类号: C23L1600

    摘要: An apparatus for processing a microelectronic workpiece in a micro-environment is set forth. The apparatus includes a first chamber member having an interior chamber wall and a second chamber member having an interior chamber wall. The first and second chamber members are adapted for relative movement between a loading position in which the first and second chamber members are distal one another and a processing position in which the first and second chamber members are proximate one another to define a processing chamber. At least one workpiece support assembly is disposed between the first and second chamber members for supporting the microelectronic workpiece. The workpiece support assembly is operable to space the workpiece a first distance, x1, from an interior chamber wall of at least one of the first and second chamber members when the first and second chamber members are in the loading position and to space the workpiece a second distance, x2, from the interior chamber wall when the first and second chamber members are in the processing position, wherein x1>x2.

    摘要翻译: 阐述了在微环境中处理微电子工件的装置。 该装置包括具有内部室壁的第一室构件和具有内部室壁的第二室构件。 第一和第二室构件适于在第一和第二室构件彼此远离的装载位置和第一和第二室构件彼此靠近以限定处理室的处理位置之间的相对运动。 至少一个工件支撑组件设置在第一和第二室构件之间,用于支撑微电子工件。 工件支撑组件可操作以当第一和第二室构件处于装载位置时将工件与第一和第二室构件中的至少一个室内构件的内室壁隔开第一距离x1,并使工件空间 第二距离x2,当第一和第二腔室构件处于加工位置时,其中x1> x2。