摘要:
A computer-implemented method provides an elastic modulus map of a chip carrier of a flip chip package. Design data including dielectric and conductive design elements of each of vertically aligned sub-areas of each of the layers of the chip carrier are modeled as springs to provide the elastic modulus map. Determining the elastic modulus of the sub-areas of the chip carrier identifies probable mechanical failure sites during chip-join and cools down of the flip chip package. Modifying a footprint of solder bumps to the chip carrier reduces stresses applied to the identified probable mechanical failure sites. Modifying the chip carrier design to reduce a stiffness of sub-areas associated with identified probable mechanical failure sites also reduces stresses from chip-join and cool-down.
摘要:
A computer-implemented method provides an elastic modulus map of a chip carrier of a flip chip package. Design data including dielectric and conductive design elements of each of vertically aligned sub-areas of each of the layers of the chip carrier are modeled as springs to provide the elastic modulus map. Determining the elastic modulus of the sub-areas of the chip carrier identifies probable mechanical failure sites during chip-join and cools down of the flip chip package. Modifying a footprint of solder bumps to the chip carrier reduces stresses applied to the identified probable mechanical failure sites. Modifying the chip carrier design to reduce a stiffness of sub-areas associated with identified probable mechanical failure sites also reduces stresses from chip-join and cool-down.
摘要:
A stacked via structure for reducing vertical stiffness includes: a plurality of stacked vias, each via disposed on a disc-like structure. The disc-like structure includes a platted through hole landing supporting the plurality of stacked vias. The platted through hole landing includes an etched pattern.
摘要:
A stacked via structure for reducing vertical stiffness includes: a plurality of stacked vias, each via disposed on a disc-like structure. The disc-like structure includes a platted through hole landing with a thickness of substantially 3 μm. The platted through hole landing includes an etched pattern and a copper top surface.
摘要:
A substrate via structure for stacked vias in a substrate/chip assembly includes: a center via stack and a plurality of stacked vias clustered around the center via stack. In this structure, the center via and the surrounding vias are made of copper. Some of the surrounding vias may be non-functional vias and these may be of a different height than the functional vias.
摘要:
A substrate via structure for stacked vias in a substrate/chip assembly includes: a center via stack and a plurality of stacked vias clustered around the center via stack. In this structure, the center via and the surrounding vias are made of copper. Some of the surrounding vias may be non-functional vias and these may be of a different height than the functional vias.
摘要:
A stacked via structure for reducing vertical stiffness includes: a plurality of stacked vias, each via disposed on a disc-like structure. The disc-like structure includes a platted through hole landing with a thickness of substantially 3 μm. The platted through hole landing includes an etched pattern and a copper top surface.
摘要:
A stacked via structure for reducing vertical stiffness includes: a plurality of stacked vias, each via disposed on a disc-like structure. The disc-like structure includes a platted through hole landing supporting the plurality of stacked vias. The platted through hole landing includes an etched pattern.
摘要:
A stacked via structure for reducing vertical stiffness includes: a plurality of stacked vias, each via disposed on a disc-like structure. The disc-like structure includes a platted through hole landing supporting the plurality of stacked vias. The platted through hole landing includes a compliant center zone; and spring-like stiffness-reducing connectors for connecting the compliant center zone of the platted through hole landing.
摘要:
A method of fabricating a substrate via structure in a substrate/chip assembly includes steps of: disposing a center via stack for electrical interconnects in the substrate/chip assembly; and providing a plurality of stacked vias surrounding the center via stack. The plurality of stacked vias encircle the center via stack, resulting in no isolated via stacks on the structure. The plurality of stacked vias have both functional and non-functional vias.