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95 条记录 (耗时 0.033 秒)

    Grain boundary blocking for stress migration and electromigration improvement in CU interconnects
    1.
    发明申请
    Grain boundary blocking for stress migration and electromigration improvement in CU interconnects 有权
    用于CU互连中的应力迁移和电迁移改进的谷物边界阻塞

    公开(公告)号：US20060286797A1

    公开(公告)日：2006-12-21

    申请号：US11153747

    申请日：2005-06-15

    申请人： Fan Zhang ,  Kho Liep ,  Alex See ,  Cheng-Cheh Tou ,  Xiaomei Bu ,  Tae Lee ,  Liang Hsia

    发明人： Fan Zhang ,  Kho Liep ,  Alex See ,  Cheng-Cheh Tou ,  Xiaomei Bu ,  Tae Lee ,  Liang Hsia

    IPC分类号： H01L21/44 ,  H01L21/4763

    CPC分类号： H01L21/76859 ,  H01L21/76856 ,  H01L21/76864

    摘要： Example embodiments of a structure and method for forming a copper interconnect having a doped region near a top surface. The doped region has implanted alloying elements that block grain boundaries and reduce stress and electro migration. In a first example embodiment, the barrier layer is left over the inter metal dielectric layer during the alloying element implant. The barrier layer is later removed with a planarization process. In a second example embodiment the barrier layer is removed before the alloying element implant and a hard mask blocks the alloying element from being implanted in the inter metal dielectric layer.

    摘要翻译： 用于形成具有在顶表面附近的掺杂区域的铜互连的结构和方法的示例实施例。 掺杂区域已经植入了阻挡晶界并减少应力和电迁移的合金元素。 在第一示例性实施例中，在合金元素植入期间，阻挡层留在金属间介电层上。 稍后通过平坦化处理去除阻挡层。 在第二示例性实施例中，在合金元素注入之前去除阻挡层，并且硬掩模阻止合金元素被注入在金属间介电层中。

    Structure and method of liner air gap formation
    2.
    发明申请
    Structure and method of liner air gap formation 有权
    衬里气隙形成的结构和方法

    公开(公告)号：US20060030128A1

    公开(公告)日：2006-02-09

    申请号：US10910499

    申请日：2004-08-03

    申请人： Xiaomei Bu ,  Alex See ,  Tae Lee ,  Fan Zhang ,  Yeon Lim ,  Liang Hsia

    发明人： Xiaomei Bu ,  Alex See ,  Tae Lee ,  Fan Zhang ,  Yeon Lim ,  Liang Hsia

    IPC分类号： H01L21/78

    CPC分类号： H01L21/7682 ,  H01L21/76807 ,  H01L21/76831 ,  H01L23/5222 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A structure and method of a semiconductor device with liner air gaps next to interconnects and dielectric layers. A dielectric layer is formed over a lower dielectric layer and a lower interconnect over a substrate. We form an interconnect opening in the dielectric layer. The opening has sidewalls of the dielectric layer. A sacrificial liner is formed over the sidewalls of the interconnect opening. An upper interconnect is formed that fills the opening. We remove the sacrificial liner/spacers to form (air) liner gaps.

    摘要翻译： 一种半导体器件的结构和方法，衬底气隙靠近互连和电介质层。 介电层形成在衬底上的下介电层和下互连之上。 我们在电介质层中形成互连开口。 开口具有介电层的侧壁。 牺牲衬垫形成在互连开口的侧壁上。 形成填充开口的上互连。 我们移除牺牲衬垫/垫片以形成（空气）衬垫间隙。

    Slot designs in wide metal lines
    4.
    发明申请
    Slot designs in wide metal lines 有权
    狭槽金属线槽设计

    公开(公告)号：US20060040491A1

    公开(公告)日：2006-02-23

    申请号：US10923123

    申请日：2004-08-21

    申请人： Yeow Lim ,  Alex See ,  Tae Lee ,  David Vigar ,  Liang Hsia ,  Kin Pey

    发明人： Yeow Lim ,  Alex See ,  Tae Lee ,  David Vigar ,  Liang Hsia ,  Kin Pey

    IPC分类号： H01L21/4763

    CPC分类号： H01L23/528 ,  H01L21/0276 ,  H01L21/288 ,  H01L21/3212 ,  H01L21/76802 ,  H01L21/76808 ,  H01L21/76816 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/7685 ,  H01L21/76879 ,  H01L23/5226 ,  H01L23/53228 ,  H01L23/53295 ,  H01L23/562 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method and structure for slots in wide lines to reduce stress. An example embodiment method and structure for is an interconnect structure comprising: interconnect comprising a wide line. The wide line has a first slot. The first slot is spaced a first distance from a via plug so that the first slot relieves stress on the wide line and the via plug. The via plug can contact the wide line from above or below. Another example embodiment is a dual damascene interconnect structure comprising: an dual damascene shaped interconnect comprising a via plug, a first slot and a wide line. The wide line has the first slot. The first slot is spaced a first distance from the via plug so that the first slot relieves stress on the wide line and the via plug.

    摘要翻译： 用于宽线槽以减少压力的方法和结构。 一种示例性实施例的方法和结构是一种互连结构，包括：包括宽线的互连。 宽线有第一个插槽。 第一槽与通孔塞隔开第一距离，使得第一槽减轻宽线和通孔塞上的应力。 通孔插头可以从上方或下方接触宽线。 另一个示例性实施例是双镶嵌互连结构，包括：双镶嵌形互连件，其包括通孔塞，第一槽和宽线。 宽线有第一个插槽。 第一槽与通孔塞隔开第一距离，使得第一槽减轻宽线和通孔塞上的应力。

    Conductive compound cap layer
    6.
    发明申请
    Conductive compound cap layer 审中-公开
    导电复合盖层

    公开(公告)号：US20060001170A1

    公开(公告)日：2006-01-05

    申请号：US10882855

    申请日：2004-07-01

    申请人： Fan Zhang ,  Tae Lee ,  Liang choo Hsia

    发明人： Fan Zhang ,  Tae Lee ,  Liang choo Hsia

    IPC分类号： H01L29/40 ,  H01L21/44

    CPC分类号： H01L21/76882 ,  H01L21/76849 ,  H01L21/7685 ,  H01L21/76858 ,  H01L21/76864 ,  H01L21/76886

    摘要： An interconnect structure and method thereof comprising: a interconnect and a compound cap layer. The interconnect has a compound cap layer thereover. The interconnect is preferably comprised of copper. The compound cap layer is preferably comprised of a copper-metal (Cu-Me) compound or a metal; and is more preferably comprised of a Cu—Sn compound or Ni metal. A dielectric cap layer is formed over the compound cap layer. The compound cap layer can provide a barrier capping effect to the Cu to minimize the out-diffusion of Cu and therefore improve the electro-migration performance of Cu. The compound cap layer has excellent adhesion to dielectric cap layers, especially SiN and SiC dielectric cap layers.

    摘要翻译： 一种互连结构及其方法，包括：互连和复合覆盖层。 互连在其上具有复合盖层。 互连优选地由铜组成。 化合物盖层优选由铜 - 金属（Cu-Me）化合物或金属组成; 更优选由Cu-Sn化合物或Ni金属构成。 在复合盖层之上形成电介质盖层。 复合盖层可以提供Cu的阻挡封盖作用以最小化Cu的扩散，从而提高Cu的电迁移性能。 复合覆盖层对电介质盖层，特别是SiN和SiC介电盖层具有优异的粘合性。

    Optical finger print input device
    8.
    发明申请
    Optical finger print input device 审中-公开
    光指针输入装置

    公开(公告)号：US20070196003A1

    公开(公告)日：2007-08-23

    申请号：US10593373

    申请日：2004-09-14

    申请人： Hyun Kim ,  Young Seo ,  Jong Ahn ,  Seung Lee ,  Sa Hong ,  Tae Lee ,  Byung Kwak

    发明人： Hyun Kim ,  Young Seo ,  Jong Ahn ,  Seung Lee ,  Sa Hong ,  Tae Lee ,  Byung Kwak

    IPC分类号： G06K9/00

    CPC分类号： G06K9/00046 ,  G06K9/00899

    摘要： An optical fingerprint input device by where a mark identification is attached to one surface of a prism and reflected by light beams coming from an external light source to be incident on a lens such that erroneous recognition caused by a fingerprint afterimage of water, sweat or oil remaining on the fingerprint contact surface of the prism can be prevented to improve the security of the device, and a visual advertisement can be additionally obtained when a mark identification logo for advertisement is attached on one surface of the prism.

    摘要翻译： 一种光学指纹输入装置，其中标记识别附着到棱镜的一个表面并由来自外部光源的光束反射以入射到透镜上，使得由指纹残留水，汗或油引起的错误识别 可以防止残留在棱镜的指纹接触表面上，从而提高装置的安全性，并且当在棱镜的一个表面上附着用于广告的标识识别标识时，可以另外获得视觉广告。

    Drive unit for dish washing machines
    10.
    发明申请
    Drive unit for dish washing machines 有权
    洗碗机驱动装置

    公开(公告)号：US20060151016A1

    公开(公告)日：2006-07-13

    申请号：US11188762

    申请日：2005-07-26

    申请人： Si Jeon ,  Tae Lee ,  Young Park

    发明人： Si Jeon ,  Tae Lee ,  Young Park

    IPC分类号： B08B3/02

    CPC分类号： A47L15/4208 ,  A47L15/4204 ,  A47L15/4225

    摘要： A drive unit for dish washing machines includes a flow channel housing, a filter housing and an arm holder, which are thermally fused to one another to form an integral unit. Consequently, assembly of the drive unit is simplified, leakage of wash water is prevented, and pumping performance is increased. Also, the flow channel housing, the filter housing and the arm holder are concurrently fixed to a pump housing of the drive unit by fixing members. Consequently, the assembly process of the drive unit is simplified, and the coupling force between the components of the drive unit is increased.

    摘要翻译： 用于洗碗机的驱动单元包括彼此热熔合以形成整体单元的流动通道壳体，过滤器壳体和臂保持器。 因此，简化了驱动单元的组装，防止了洗涤水的泄漏，并提高了泵送性能。 此外，流动通道壳体，过滤器壳体和臂保持器通过固定构件同时固定到驱动单元的泵壳体。 因此，驱动单元的组装过程被简化，并且驱动单元的部件之间的联接力增加。