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21 条记录 (耗时 0.024 秒)

    Seat device for use in a vehicle
    1.
    发明授权
    Seat device for use in a vehicle 有权
    用于车辆的座椅装置

    公开(公告)号：US09016797B2

    公开(公告)日：2015-04-28

    申请号：US13355355

    申请日：2012-01-20

    申请人： Fujio Iida ,  Masami Sasaki

    发明人： Fujio Iida ,  Masami Sasaki

    IPC分类号： A47D15/00 ,  B60N2/24 ,  B60N2/02 ,  B60N2/06 ,  B60N2/07 ,  B60N2/14 ,  B60N2/46 ,  A61G3/02 ,  A61G5/08 ,  B60N2/44

    CPC分类号： B60N2/245 ,  A61G3/0209 ,  A61G5/0816 ,  B60N2/0252 ,  B60N2/067 ,  B60N2/0742 ,  B60N2/0745 ,  B60N2/14 ,  B60N2/753 ,  B60N2/76 ,  B60N2/767 ,  B60N2/79 ,  B60N2002/905

    摘要： A seat device for use in a vehicle that can move through an opening of a vehicle between a loading and unloading position positioned outside the vehicle, where a passenger can load and unload as well as be seated, and a seating position positioned in the cabin of the vehicle, where the passenger can maintain a seated disposition. A securing member of the seat device can secure a wheelchair in a folded state to a side surface or a back surface of the seat. The wheelchair together with the seat can move from the loading and unloading position to inside the cabin of the vehicle, with the passenger in a seated position.

    摘要翻译： 一种用于车辆的座椅装置，其可以在位于车辆外部的装载和卸载位置之间移动通过车辆的开口，乘客可以在其中装载和卸载以及被安置，并且位于座舱内的座位位置 车辆，乘客可以保持坐姿。 座椅装置的固定构件可将处于折叠状态的轮椅固定到座椅的侧表面或后表面。 轮椅与座椅一起可以从装载和卸载位置移动到车辆舱内，乘客处于就座位置。

    Non-magnetic ceramics and ceramic multilayer parts
    4.
    发明授权
    Non-magnetic ceramics and ceramic multilayer parts 失效
    非磁性陶瓷和陶瓷多层零件

    公开(公告)号：US6008151A

    公开(公告)日：1999-12-28

    申请号：US89502

    申请日：1998-06-03

    申请人： Masami Sasaki ,  Hiroshige Okawa ,  Yasuyoshi Suzuki ,  Hideki Masuda ,  Hisayuki Abe ,  Akira Suda

    发明人： Masami Sasaki ,  Hiroshige Okawa ,  Yasuyoshi Suzuki ,  Hideki Masuda ,  Hisayuki Abe ,  Akira Suda

    IPC分类号： C03C3/089 ,  C03C10/00 ,  C03C10/04 ,  C03C14/00 ,  C04B35/16 ,  H01F17/00

    CPC分类号： C03C10/0054 ,  C03C14/004 ,  C03C14/006 ,  C03C2214/16 ,  C03C2214/20

    摘要： The invention provides a nonmagnetic ceramic comprising 5% to 40% by weight of .alpha.-quartz and 5% to 60% by weigth of zinc silicate dispersed in 35% to 75% by weight of borosilicate glass as a matrix, the borosilicate glass having SiO.sub.2 and B.sub.2 O.sub.3 contents: SiO.sub.2 =70 to 90% by weight and B.sub.2 O.sub.3 =10 to 30% by weight. Using the nonmagnetic ceramic, multilayer ceramic inductors are obtained. When the ceramic is used as ceramic multilayer parts having an inductor section, it has a low dielectric constant and good characteristics in the high-frequency region, allows for low-temperature firing enabling the use of silver electrodes, prevents chip deformation and crack occurrence upon sintering, and provides a higher mechanical strength.

    摘要翻译： 本发明提供了一种非磁性陶瓷，其包含5重量％至40重量％的α-石英和5重量％至60重量％的分散在35重量％至75重量％的硼硅酸盐玻璃作为基质的硅酸锌，硼硅酸盐玻璃具有SiO 2 B 2 O 3含量：SiO 2 = 70〜90重量％，B 2 O 3 = 10〜30重量％。 使用非磁性陶瓷，获得多层陶瓷电感器。 当陶瓷用作具有电感器部分的陶瓷多层部件时，其在高频区域具有低介电常数和良好的特性，允许使用银电极的低温烧制，防止芯片变形和裂纹发生 烧结，提供更高的机械强度。

    Method for producing flexible metal laminate
    5.
    发明授权
    Method for producing flexible metal laminate 有权
    柔性金属层压板的制造方法

    公开(公告)号：US08858751B2

    公开(公告)日：2014-10-14

    申请号：US13395822

    申请日：2010-09-09

    申请人： Takuro Kochiyama ,  Hiroto Shimokawa ,  Yoshitaka Mineki ,  Masami Sasaki

    发明人： Takuro Kochiyama ,  Hiroto Shimokawa ,  Yoshitaka Mineki ,  Masami Sasaki

    IPC分类号： B32B37/04 ,  B32B15/08 ,  B32B37/10 ,  H05K3/02 ,  B32B15/20 ,  B32B27/34 ,  H05K1/03

    CPC分类号： H05K3/022 ,  B32B15/08 ,  B32B15/20 ,  B32B27/34 ,  B32B37/1027 ,  B32B2307/406 ,  B32B2307/408 ,  B32B2311/00 ,  B32B2379/08 ,  H05K1/0393 ,  H05K2201/0355 ,  H05K2203/068 ,  H05K2203/1545 ,  Y10T156/10

    摘要： A method for producing a flexible metal laminate includes continuously thermocompression-bonding laminate metal foils to a resin film. The thermocompression-bonding step is conducted by placing a protection metal foil between a pressure surface of a heat and pressure forming apparatus and the laminate metal foils. When the protection metal foil is subjected to an abrasion resistance test, in which the protection metal foil is placed such that a matte surface of the protection metal foil contacts a plate material having a surface equivalent to the pressure surface and in which the matte surface is rubbed against the surface of the plate material by applying a load to a shiny surface of the protection metal foil and pulling the protection metal foil, a streak is found on the matte surface only in a case where the load is over 500 g per area of 76 mm×26 mm.

    摘要翻译： 柔性金属层叠体的制造方法包括将层压金属箔连续热压接在树脂膜上。 通过将保护金属箔放置在热压成形装置的压力表面和层压金属箔之间来进行热压接步骤。 当保护金属箔经受耐磨性试验时，其中保护金属箔被放置成使得保护金属箔的无光泽表面与具有与压力表面相当的表面的板材接触，并且其中无光泽表面是 通过向保护金属箔的光泽表面施加负载并拉动保护金属箔而摩擦板材表面，仅在每个面积的负载超过500g的情况下，在无光泽表面上发现条纹 76毫米×26毫米。

    Method for producing multilayer substrate and electronic part, and multilayer electronic part
    6.
    发明授权
    Method for producing multilayer substrate and electronic part, and multilayer electronic part 失效
    多层基板和电子部件的制造方法以及多层电子部件

    公开(公告)号：US06808642B2

    公开(公告)日：2004-10-26

    申请号：US10238677

    申请日：2002-09-11

    申请人： Minoru Takaya ,  Toshikazu Endo ,  Masami Sasaki

    发明人： Minoru Takaya ,  Toshikazu Endo ,  Masami Sasaki

    IPC分类号： H01B1300

    CPC分类号： H05K1/0373 ,  H01F17/0006 ,  H01F17/0013 ,  H01F41/041 ,  H01G4/308 ,  H05K1/16 ,  H05K1/162 ,  H05K1/165 ,  H05K3/0052 ,  H05K3/06 ,  H05K3/20 ,  H05K3/403 ,  H05K3/429 ,  H05K3/4652 ,  H05K2201/0209 ,  H05K2201/086 ,  Y10T29/49124 ,  Y10T29/49155

    摘要： This invention has an object of providing a method for producing a multilayer substrate or an electronic part wherein decrease in the thickness has been enabled without causing the problem of insufficient strength or the like in the handling, as well as the electronic part. Such object has been attained by a method for producing a multilayer substrate or an electronic part comprising the steps of adhering a conductor layer to a transfer film, patterning the conductor layer to form a predetermined pattern, placing the transfer film overlaid with the patterned conductor layer on a prepreg so that the side of the conductor layer faces the prepreg, and then adhering the transfer film to the prepreg by applying heat and pressure and peeling the transfer film to produce the prepreg having the conductor layer formed thereon; and the multilayer electronic part produced by such method.

    摘要翻译： 本发明的目的在于提供一种制造多层基板或电子部件的方法，其中已经实现了厚度的减小，而不会导致处理中的强度等不足的问题以及电子部件。 这样的目的已经通过多层基板或电子部件的制造方法来实现，该方法包括以下步骤：将导体层粘合到转印膜上，图案化导体层以形成预定图案，将转印膜重叠在图案化导体层 在预浸料坯上使导体层的一侧面向预浸料坯，然后通过施加热和压力将转印膜粘附到预浸料上，并剥离转印膜以制备其上形成有导体层的预浸料; 和通过这种方法制造的多层电子部件。

    Electrostastic chuck
    7.
    发明授权
    Electrostastic chuck 失效
    电磁卡盘

    公开(公告)号：US5530616A

    公开(公告)日：1996-06-25

    申请号：US341001

    申请日：1994-11-17

    申请人： Tetsuo Kitabayashi ,  Atsushi Obara ,  Jun Miyagi ,  Yasumi Sago ,  Masami Sasaki

    发明人： Tetsuo Kitabayashi ,  Atsushi Obara ,  Jun Miyagi ,  Yasumi Sago ,  Masami Sasaki

    IPC分类号： B23Q3/15 ,  H01L21/683 ,  H02N13/00

    CPC分类号： H02N13/00 ,  H01L21/6831 ,  H01L21/6833

    摘要： An electrostatic chuck for electrostatically clamping a semiconductor wafer while minimizing any plane temperature difference thereof has a dielectric layer joined to a metal plate and an inner electrode disposed in the di-electric layer. The dielectric layer has a raised outer rim disposed on an upper surface thereof along an outer peripheral edge thereof, and a plurality of protrusions disposed on the upper surface radially inwardly of the outer rim, the protrusions having upper surfaces for clamping the semiconductor wafer in direct contact therewith. The volume resistivity of the dielectric layer is 10.sup.9 .OMEGA.m or less, and Rmax (maximum height) of the clamping surfaces of the protrusions 5 is 2.0 .mu.m or less and or Ra (center-line average roughness) thereof is 0.25 .mu.m or less. The ratio of the total area of the clamping surfaces of the protrusions to the entire area of the upper surface of the dielectric layer is equal to or greater than 1% and less than 10%.

    摘要翻译： 用于静电夹持半导体晶片同时最小化其平面温度差的静电卡盘具有连接到设置在二电层中的金属板和内部电极的电介质层。 电介质层具有沿着其外周边缘设置在其上表面上的凸起的外边缘，以及设置在外边缘的径向内侧的上表面上的多个突起，所述突起具有用于将半导体晶片直接夹持的上表面 与其接触。 电介质层的体积电阻率为10 10Ω·m以下，突起5的夹持面的Rmax（最大高度）为2.0μm以下，Ra（中心线平均粗糙度）为0.25μm， 减。 突起的夹持表面的总面积与介电层的上表面的整个面积的比率等于或大于1％且小于10％。

    Method of manufacturing gallium phosphide single crystals with low defect density
    10.
    发明授权
    Method of manufacturing gallium phosphide single crystals with low defect density 失效
    低缺陷密度的磷化镓单晶的制造方法

    公开(公告)号：US4303464A

    公开(公告)日：1981-12-01

    申请号：US130407

    申请日：1980-03-14

    申请人： Takashi Suzuki ,  Shin-ichi Akai ,  Hideki Mori ,  Katsunosuke Aoyagi ,  Takashi Shimoda ,  Kazuhisa Matsumoto ,  Masami Sasaki

    发明人： Takashi Suzuki ,  Shin-ichi Akai ,  Hideki Mori ,  Katsunosuke Aoyagi ,  Takashi Shimoda ,  Kazuhisa Matsumoto ,  Masami Sasaki

    IPC分类号： C30B15/04 ,  C30B15/00 ,  C30B27/02 ,  C30B29/44 ,  H01L21/18 ,  H01L21/208

    CPC分类号： C30B27/02 ,  C30B15/00 ,  C30B29/44

    摘要： Gallium phosphide single crystals with low defect density which are manufactured by the liquid encapsulation Czochralski pulling method and which are characterized in that they are doped or not doped with at least one kind of dopant which is electrically active in gallium phosphide and are so doped as to have at least one dopant such as boron or some other strongly reducing impurity which has a reducing activity equal to or greater than that of boron remain in the crystals in a quantity not less than 1.times.10.sup.17 cm.sup.-3 and the sum of dislocation etch pit density and small conical etch pit density of the surface (111)B which has been subjected to etching for 3 to 5 minutes with RC etchant at a temperature of 65.degree. C..about.75.degree. C. after removing the mechanically damaged layer on the surface does not exceed 1.times.10.sup.5 cm.sup.-2, and a method of manufacturing the crystals.

    摘要翻译： 具有低缺陷密度的磷化镓单晶，其通过液体封装Czochralski拉制法制造，其特征在于它们掺杂或未掺杂至少一种在磷化镓中具有电活性并且掺杂的掺杂剂 具有等于​​或大于硼的还原活性的至少一种掺杂剂如硼或一些其它强还原杂质在晶体中保留不少于1×10 17 cm -3，并且位错蚀刻坑密度和 表面（111）B的小锥形蚀刻坑密度，已经在65℃的温度下用RC蚀刻剂蚀刻3至5分钟。去除表面上的机械损伤层之后的差值75℃ 超过1×10 5 cm -2，以及制造晶体的方法。