公开(公告)号：US11322912B2

公开(公告)日：2022-05-03

申请号：US15188270

申请日：2016-06-21

Applicant: FURUKAWA ELECTRIC CO., LTD.

Inventor： Akira Itoh ,  Junji Yoshida ,  Kazuaki Kiyota

IPC: H01S5/34 ,  H01S5/40 ,  H01S5/12 ,  H01S5/024 ,  H01S5/0687 ,  H01S5/30 ,  H01S5/02251 ,  H01S5/20 ,  H01S5/026 ,  H01S5/227 ,  H01S5/22 ,  H01S5/10

Abstract: A semiconductor laser array includes: a plurality of semiconductor lasers configured to oscillate in a single mode at oscillation wavelengths different from one another, each semiconductor laser including an active layer including a multi-quantum well structure including a plurality of will layers and a plurality of barrier layers laminated alternately, and an n-side separate confinement heterostructure layer and p-side separate confinement heterostructure layer configured to sandwich the active layer therebetween in a thickness direction, band gap energies of the n-side separate confinement heterostructure layer and the p-side separate confinement heterostructure layer being greater than band gap energies of the barrier layers of the active layer. The active layer is doped with an n-type impurity.

公开(公告)号：US20130149804A1

公开(公告)日：2013-06-13

申请号：US13748469

申请日：2013-01-23

Applicant: Furukawa Electric Co., Ltd.

Inventor： Junji Yoshida ,  Naoki Tsukiji ,  Hidehiro Taniguchi ,  Satosho Irino ,  Hirokazu Itoh ,  Harunobu Ikeda ,  Masako Kobayakawa ,  Akihiko Kasukawa

IPC: H01L33/60

CPC classification number: H01L33/60 ,  B82Y20/00 ,  H01L2924/0002 ,  H01S5/02284 ,  H01S5/02415 ,  H01S5/02438 ,  H01S5/2206 ,  H01S5/2222 ,  H01S5/2275 ,  H01S5/3406 ,  H01S5/3434 ,  H01L2924/00

Abstract: A semiconductor device of the invention is formed so that n-type InP current blocking layers enter the inside of p-type InP cladding layers, i.e., the n-type current blocking layers ride over the upper part of the p-type InP cladding layers, so that a distance between the n-type InP current block layers composing a current blocking region is narrower than a width of the p-type cladding layers contacting with the n-type InP current blocking layers. Thereby, the semiconductor device whose leak current in the current blocking region may be reduced which permits high-output and high-temperature operations may be readily fabricated.

Abstract translation: 本发明的半导体器件形成为使n型InP电流阻挡层进入p型InP包覆层的内部，即，n型电流阻挡层越过p型InP包覆层的上部 使得构成电流阻挡区域的n型InP电流阻挡层之间的距离比与n型InP电流阻挡层接触的p型覆层的宽度窄。 因此，可以容易地制造其电流阻挡区域中的漏电流可以减小的半导体器件，其允许高输出和高温操作。

公开(公告)号：US10944236B2

公开(公告)日：2021-03-09

申请号：US15622897

申请日：2017-06-14

Applicant: FURUKAWA ELECTRIC CO., LTD.

Inventor： Hidehiro Taniguchi ,  Junji Yoshida

IPC: H01S5/022 ,  H01S5/024 ,  H01S5/0683 ,  H01S5/40 ,  H01S5/02216

Abstract: A circuit conductor is provided on a base. A semiconductor laser is connected to the circuit conductor. Cutout parts on which the circuit conductor is not formed are provided at, for example, the vicinity of the four corners of the base, and a hole is provided at each of the said portions. The holes penetrate the base. Fixing members are inserted through the holes. The fixing members are, for example, male threads. Since the head part of the fixing members is located in the cutout part, the fixing members and the circuit conductor are not in contact with each other. A platform has holes formed at portions corresponding to the holes in the optical unit and female threads formed on the inner surface. The fixing members and the platform are therefore joined. As a result, the optical unit is fixed to the platform.

公开(公告)号：US20170288367A1

公开(公告)日：2017-10-05

申请号：US15622897

申请日：2017-06-14

Applicant: FURUKAWA ELECTRIC CO., LTD.

Inventor： Hidehiro Taniguchi ,  Junji Yoshida

IPC: H01S5/022 ,  H01S5/40 ,  H01S5/024 ,  H01S5/0683

Abstract: A circuit conductor is provided on a base. A semiconductor laser is connected to the circuit conductor. Cutout parts on which the circuit conductor is not formed are provided at, for example, the vicinity of the four corners of the base, and a hole is provided at each of the said portions. The holes penetrate the base. Fixing members are inserted through the holes. The fixing members are, for example, male threads. Since the head part of the fixing members is located in the cutout part, the fixing members and the circuit conductor are not in contact with each other. A platform has holes formed at portions corresponding to the holes in the optical unit and female threads formed on the inner surface. The fixing members and the platform are therefore joined. As a result, the optical unit is fixed to the platform.

公开(公告)号：US09711945B2

公开(公告)日：2017-07-18

申请号：US15177175

申请日：2016-06-08

Applicant: FURUKAWA ELECTRIC CO., LTD.

Inventor： Hideaki Hasegawa ,  Noriyuki Yokouchi ,  Taketsugu Sawamura ,  Satoshi Irino ,  Junji Yoshida

IPC: H01S5/14 ,  H01S3/067 ,  H01S3/094 ,  H01S3/30 ,  H01S5/024 ,  H01S5/065 ,  H01S5/022

CPC classification number: H01S5/146 ,  H01S3/06754 ,  H01S3/094011 ,  H01S3/094096 ,  H01S3/302 ,  H01S5/02208 ,  H01S5/02248 ,  H01S5/02415 ,  H01S5/0652 ,  H01S5/141 ,  H01S5/142 ,  H01S2301/03

Abstract: A method of designing a semiconductor laser device includes: controlling a distance between the output-side reflection unit and the second reflection unit and an effective optical feedback κ to the semiconductor laser element, the effective optical feedback κ defined by a below-presented formula (1) including a circulating time τ of the light in the semiconductor laser element, a reflectivity R1 of the output-side reflection unit, and a reflectivity R2 of the second reflection unit; selecting a semiconductor laser device in which an LFF period is equal to or smaller than 20 ns as a semiconductor laser device in which high speed switching occurs between an FBG mode and an FP mode; and using the selected semiconductor laser device as an semiconductor laser device oscillating in a coherent collapse mode. κ=(1/τ)×(1−R1)×(R2/R1)1/2  (1)

公开(公告)号：US09083150B2

公开(公告)日：2015-07-14

申请号：US14507374

申请日：2014-10-06

Applicant: FURUKAWA ELECTRIC CO., LTD.

Inventor： Junji Yoshida ,  Hirokazu Itoh ,  Satoshi Irino ,  Yuichiro Irie ,  Taketsugu Sawamura

IPC: H01S5/00 ,  H01S5/20 ,  H01S5/34 ,  H01S3/067 ,  H01S5/22 ,  H01S5/024 ,  H01S3/04

CPC classification number: H01S5/3216 ,  B82Y20/00 ,  H01S3/04 ,  H01S3/0675 ,  H01S3/06754 ,  H01S3/094003 ,  H01S3/094011 ,  H01S3/09415 ,  H01S3/302 ,  H01S5/0064 ,  H01S5/02284 ,  H01S5/02288 ,  H01S5/024 ,  H01S5/0287 ,  H01S5/1039 ,  H01S5/1064 ,  H01S5/146 ,  H01S5/2018 ,  H01S5/2077 ,  H01S5/2205 ,  H01S5/2206 ,  H01S5/2222 ,  H01S5/227 ,  H01S5/3213 ,  H01S5/34 ,  H01S5/3406 ,  H01S5/34306 ,  H01S5/3434 ,  H01S2301/03 ,  H01S2301/166

Abstract: An optical semiconductor device outputting a predetermined wavelength of laser light includes: a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction; a separate confinement heterostructure layer positioned between the quantum well active layer and the n-type cladding layer; and an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and the n-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer.

Abstract translation: 输出预定波长的激光的光学半导体器件包括：在厚度方向上位于p型覆层和n型覆层之间的量子阱有源层; 位于量子阱有源层和n型覆层之间的单独限制异质结构层; 以及位于分离的限制异质结构层和n型覆层之间的电场分布控制层，并且由至少两个具有比构成量子阱活性的势垒层的带隙能量大的带隙能量的半导体层构成 层。

公开(公告)号：US11605935B2

公开(公告)日：2023-03-14

申请号：US17187086

申请日：2021-02-26

Applicant: FURUKAWA ELECTRIC CO., LTD.

Inventor： Junji Yoshida ,  Hirokazu Itoh ,  Satoshi Irino ,  Yuichiro Irie ,  Taketsugu Sawamura

IPC: H01S5/00 ,  H01S5/32 ,  H01S3/067 ,  H01S5/34 ,  H01S5/22 ,  H01S5/20 ,  H01S5/343 ,  H01S5/227 ,  B82Y20/00 ,  H01S5/10 ,  H01S5/02251 ,  H01S5/02253 ,  H01S3/094 ,  H01S5/024 ,  H01S3/04 ,  H01S5/14 ,  H01S5/028 ,  H01S3/30 ,  H01S3/0941

Abstract: An optical semiconductor device outputting a predetermined wavelength of laser light includes a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction. The optical semiconductor device includes a separate confinement heterostructure layer positioned between the quantum well active layer and the n-type cladding layer. The optical semiconductor device further includes an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and the n-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer. The optical semiconductor device is applied to a ridge-stripe type laser.

公开(公告)号：US11581706B2

公开(公告)日：2023-02-14

申请号：US17186933

申请日：2021-02-26

Applicant: FURUKAWA ELECTRIC CO., LTD.

Inventor： Junji Yoshida ,  Hirokazu Itoh ,  Satoshi Irino ,  Yuichiro Irie ,  Taketsugu Sawamura

IPC: H01S5/00 ,  H01S5/32 ,  H01S3/067 ,  H01S5/34 ,  H01S5/22 ,  H01S5/20 ,  H01S5/343 ,  H01S5/227 ,  B82Y20/00 ,  H01S5/10 ,  H01S5/02251 ,  H01S5/02253 ,  H01S3/094 ,  H01S5/024 ,  H01S3/04 ,  H01S5/14 ,  H01S5/028 ,  H01S3/30 ,  H01S3/0941

Abstract: An optical semiconductor device outputting a predetermined wavelength of laser light includes a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction. The optical semiconductor device includes a separate confinement heterostructure layer positioned between the quantum well active layer and the n-type cladding layer. The optical semiconductor device further includes an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and the n-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer. The quantum well active layer is doped with 0.3 to 1×1018/cm3 of n-type impurity.

公开(公告)号：US10938183B2

公开(公告)日：2021-03-02

申请号：US16672163

申请日：2019-11-01

Applicant: FURUKAWA ELECTRIC CO., LTD.

Inventor： Junji Yoshida ,  Hirokazu Itoh ,  Satoshi Irino ,  Yuichiro Irie ,  Taketsugu Sawamura ,  Masaki Funabashi ,  Nobumasa Tanaka

IPC: H01S5/00 ,  H01S5/32 ,  H01S5/022 ,  H01S3/067 ,  H01S5/34 ,  H01S5/22 ,  H01S5/20 ,  H01S5/343 ,  H01S5/227 ,  B82Y20/00 ,  H01S5/10 ,  H01S3/094 ,  H01S5/024 ,  H01S3/04 ,  H01S5/14 ,  H01S5/028 ,  H01S3/30 ,  H01S3/0941

Abstract: A distributed feedback (DFB) laser outputting a predetermined wavelength of laser light includes a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction. The DFB laser includes a separate confinement heterostructure layer positioned between the quantum well active layer and then-type cladding layer. The DFB laser includes an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and then-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer. The DFB laser has a function to select a specific wavelength by returning a specific wavelength in the wavelength-variable laser.

公开(公告)号：US12009636B2

公开(公告)日：2024-06-11

申请号：US18164285

申请日：2023-02-03

Applicant: FURUKAWA ELECTRIC CO., LTD.

Inventor： Junji Yoshida ,  Hirokazu Itoh ,  Satoshi Irino ,  Yuichiro Irie ,  Taketsugu Sawamura

IPC: H01S5/00 ,  H01S3/067 ,  H01S5/02251 ,  H01S5/02253 ,  H01S5/10 ,  H01S5/20 ,  H01S5/22 ,  H01S5/227 ,  H01S5/32 ,  H01S5/34 ,  H01S5/343 ,  B82Y20/00 ,  H01S3/04 ,  H01S3/094 ,  H01S3/0941 ,  H01S3/30 ,  H01S5/024 ,  H01S5/028 ,  H01S5/14

CPC classification number: H01S5/3216 ,  H01S3/0675 ,  H01S3/06754 ,  H01S5/02251 ,  H01S5/02253 ,  H01S5/1064 ,  H01S5/2018 ,  H01S5/2077 ,  H01S5/2205 ,  H01S5/2206 ,  H01S5/227 ,  H01S5/3213 ,  H01S5/34 ,  H01S5/3406 ,  H01S5/34306 ,  H01S5/3434 ,  B82Y20/00 ,  H01S3/04 ,  H01S3/094003 ,  H01S3/094011 ,  H01S3/09415 ,  H01S3/302 ,  H01S5/0064 ,  H01S5/024 ,  H01S5/0287 ,  H01S5/1039 ,  H01S5/146 ,  H01S5/2222 ,  H01S2301/03 ,  H01S2301/166

Abstract: An optical semiconductor device outputting a predetermined wavelength of laser light includes a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction. The optical semiconductor device includes a separate confinement heterostructure layer positioned between the quantum well active layer and the n-type cladding layer. The optical semiconductor device further includes an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and the n-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer. The optical semiconductor device is applied to a ridge-stripe type laser.