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    Radiation emitter component
    1.
    发明授权
    Radiation emitter component 失效
    辐射发射器组件

    公开(公告)号：US5999552A

    公开(公告)日：1999-12-07

    申请号：US9606

    申请日：1998-01-20

    申请人： Georg Bogner ,  Herbert Brunner ,  Heinz Haas ,  Johann Luft ,  Ernst Nirschl ,  Werner Spaeth ,  Norbert Stath ,  Wolfgang Teich

    发明人： Georg Bogner ,  Herbert Brunner ,  Heinz Haas ,  Johann Luft ,  Ernst Nirschl ,  Werner Spaeth ,  Norbert Stath ,  Wolfgang Teich

    IPC分类号： H01L33/56 ,  H01S3/00 ,  H01S5/00 ,  H01S5/022 ,  H01S3/18 ,  H01L33/00

    CPC分类号： H01S5/02244 ,  H01S5/02228 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/181 ,  H01L2933/0091 ,  H01L33/56

    摘要： A radiation emitter component, in particular an infrared emitter component with a conventional light-emitting diode housing, includes two electrode connections, one of which has a well-shaped reflector. The housing has an optically transparent, electrically non-conducting encapsulation material. A semiconductor laser chip is fastened in a well-shaped reflector of the light-emitting diode housing. The semiconductor laser chip has a quantum well structure, in particular with a strained layer structure, for example MOVPE epitaxial layers with a layer sequence GaAlAs-InGaAs-GaAlAs. A diffusor material can be inserted into the optically transparent, electrically non-conducting material of the light-emitting diode housing. The diffusor material is constructed or inserted with regard to type and concentration in such a way that in connection with the semiconductor laser chip encapsulated in the light-emitting diode housing, a radiation characteristic curve or an increase of an effective emission surface is produced that is comparable to that of a conventional infrared light-emitting diode.

    摘要翻译： 辐射发射器部件，特别是具有传统发光二极管外壳的红外发射器部件包括两个电极连接件，其中之一具有良好形状的反射器。 壳体具有光学透明的非导电封装材料。 将半导体激光芯片紧固在发光二极管壳体的形状好的反射器中。 半导体激光芯片具有量子阱结构，特别是具有应变层结构，例如具有层序列GaAlAs-InGaAs-GaAlAs的MOVPE外延层。 漫射材料可以插入到发光二极管外壳的光学透明的非导电材料中。 关于类型和浓度来构造或插入扩散材料，使得与封装在发光二极管外壳中的半导体激光器芯片有关，产生辐射特性曲线或有效发射表面的增加，即， 与传统的红外发光二极管相当。

    Method for fabricating an infrared-emitting light-emitting diode
    6.
    发明授权
    Method for fabricating an infrared-emitting light-emitting diode 失效
    制造红外发光二极管的方法

    公开(公告)号：US06440765B1

    公开(公告)日：2002-08-27

    申请号：US09246747

    申请日：1999-02-08

    申请人： Reinhard Sedlmeier ,  Ernst Nirschl ,  Norbert Stath

    发明人： Reinhard Sedlmeier ,  Ernst Nirschl ,  Norbert Stath

    IPC分类号： H01L2100

    CPC分类号： H01L33/30 ,  H01L33/0062 ,  H01L33/02

    摘要： A method for fabricating an infrared-emitting light-emitting diode in which a layer sequence is applied onto a semiconductor substrate, preferably composed of GaAs. The layer sequence has, proceeding from the semiconductor substrate, a first AlGaAs cover layer, a GaAs and/or AlGaAs containing active layer and a second AlGaAs cover layer. In which case, the first AlGaAs cover layer and the active layer are fabricated by a metal organic vapor phase epitaxy (MOVPE) method and the second AlGaAs cover layer is fabricated by a liquid phase epitaxy (LPE) method. Furthermore, an electrically conductive coupling-out layer having a thickness of at least about 10 &mgr;m is deposited on the second AlGaAs cover layer by the LPE method. The coupling-out layer is optically transparent in the infrared spectral region.

    摘要翻译： 一种制造其中将层序施加到优选由GaAs构成的半导体衬底上的红外发射二极管的方法。 该层序列具有从半导体衬底开始的第一AlGaAs覆盖层，包含GaAs和/或AlGaAs的有源层和第二AlGaAs覆盖层。 在这种情况下，通过金属有机气相外延（MOVPE）方法制造第一AlGaAs覆盖层和有源层，并且通过液相外延（LPE）方法制造第二AlGaAs覆盖层。 此外，通过LPE方法在第二AlGaAs覆盖层上沉积具有至少约10μm厚度的导电耦合出层。 耦合输出层在红外光谱区域是光学透明的。