公开(公告)号：US07936062B2

公开(公告)日：2011-05-03

申请号：US11655777

申请日：2007-01-19

申请人： Giles Humpston ,  Michael J. Nystrom ,  Vage Oganesian ,  Yulia Aksenton ,  Osher Avsian ,  Robert Burtzlaff ,  Avi Dayan ,  Andrey Grinman ,  Felix Hazanovich ,  Ilya Hecht ,  Charles Rosenstein ,  David Ovrutsky ,  Mitchell Hayes Reifel

发明人： Giles Humpston ,  Michael J. Nystrom ,  Vage Oganesian ,  Yulia Aksenton ,  Osher Avsian ,  Robert Burtzlaff ,  Avi Dayan ,  Andrey Grinman ,  Felix Hazanovich ,  Ilya Hecht ,  Charles Rosenstein ,  David Ovrutsky ,  Mitchell Hayes Reifel

IPC分类号： H01L23/12

CPC分类号： B81C1/00269 ,  B81C2203/0118 ,  H01L21/50 ,  H01L23/10 ,  H01L24/48 ,  H01L24/73 ,  H01L27/14618 ,  H01L27/14687 ,  H01L31/0203 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/4824 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/16235 ,  H01L2924/181 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： Packaged microelectronic elements are provided. In an exemplary embodiment, a microelectronic element having a front face and a plurality of peripheral edges bounding the front face has a device region at the front face and a contact region with a plurality of exposed contacts adjacent to at least one of the peripheral edges. The packaged element may include a plurality of support walls overlying the front face of the microelectronic element such that a lid can be mounted to the support walls above the microelectronic element. For example, the lid may have an inner surface confronting the front face. In a particular embodiment, some of the contacts can be exposed beyond edges of the lid.

摘要翻译： 提供封装的微电子元件。 在一个示例性实施例中，具有前表面和限定前表面的多个周边边缘的微电子元件在前表面具有一个器件区域，以及一个接触区域与多个暴露的接触件相邻，至少一个周边边缘。 封装元件可以包括覆盖微电子元件的前表面的多个支撑壁，使得盖可以安装到微电子元件上方的支撑壁上。 例如，盖可以具有面向正面的内表面。 在一个具体实施例中，一些触点可以暴露在盖的边缘之外。

公开(公告)号：US20070190691A1

公开(公告)日：2007-08-16

申请号：US11655777

申请日：2007-01-19

申请人： Giles Humpston ,  Michael Nystrom ,  Vage Oganesian ,  Yulia Aksenton ,  Osher Avsian ,  Robert Burtzlaff ,  Avi Dayan ,  Andrey Grinman ,  Felix Hazanovich ,  Ilya Hecht ,  Charles Rosenstein ,  David Ovrutsky ,  Mitchell Reifel

发明人： Giles Humpston ,  Michael Nystrom ,  Vage Oganesian ,  Yulia Aksenton ,  Osher Avsian ,  Robert Burtzlaff ,  Avi Dayan ,  Andrey Grinman ,  Felix Hazanovich ,  Ilya Hecht ,  Charles Rosenstein ,  David Ovrutsky ,  Mitchell Reifel

IPC分类号： H01L21/00

CPC分类号： B81C1/00269 ,  B81C2203/0118 ,  H01L21/50 ,  H01L23/10 ,  H01L24/48 ,  H01L24/73 ,  H01L27/14618 ,  H01L27/14687 ,  H01L31/0203 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/4824 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/16235 ,  H01L2924/181 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： Packaged microelectronic elements are provided. In an exemplary embodiment, a microelectronic element having a front face and a plurality of peripheral edges bounding the front face has a device region at the front face and a contact region with a plurality of exposed contacts adjacent to at least one of the peripheral edges. The packaged element may include a plurality of support walls overlying the front face of the microelectronic element such that a lid can be mounted to the support walls above the microelectronic element. For example, the lid may have an inner surface confronting the front face. In a particular embodiment, some of the contacts can be exposed beyond edges of the lid.

摘要翻译： 提供封装的微电子元件。 在一个示例性实施例中，具有前表面和限定前表面的多个周边边缘的微电子元件在前表面具有一个器件区域，以及一个接触区域与多个暴露的接触件相邻，至少一个周边边缘。 封装元件可以包括覆盖微电子元件的前表面的多个支撑壁，使得盖可以安装到微电子元件上方的支撑壁上。 例如，盖可以具有面向正面的内表面。 在一个具体实施例中，一些触点可以暴露在盖的边缘之外。

公开(公告)号：US20070190747A1

公开(公告)日：2007-08-16

申请号：US11655739

申请日：2007-01-19

申请人： Giles Humpston ,  Michael Nystrom ,  Vage Oganesian ,  Yulia Aksenton ,  Osher Avsian ,  Robert Burtzlaff ,  Avi Dayan ,  Andrey Grinman ,  Felix Hazanovich ,  Ilya Hecht ,  Charles Rosenstein ,  David Ovrutsky

发明人： Giles Humpston ,  Michael Nystrom ,  Vage Oganesian ,  Yulia Aksenton ,  Osher Avsian ,  Robert Burtzlaff ,  Avi Dayan ,  Andrey Grinman ,  Felix Hazanovich ,  Ilya Hecht ,  Charles Rosenstein ,  David Ovrutsky

IPC分类号： H01L21/00

CPC分类号： B81C1/00285 ,  B81C2203/0118 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48228 ,  H01L2924/01019 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/1461 ,  H01L2924/16235 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00

摘要： Methods are provided for making a plurality of lidded microelectronic elements. In an exemplary embodiment, a lid wafer is assembled with a device wafer. Desirably, the lid wafer is severed into a plurality of lid elements to remove portions of the lid wafer overlying contacts at a front face of the device wafer adjacent to dicing lanes of the device wafer. Thereafter, desirably, the device wafer is severed along the dicing lanes to provide a plurality of lidded microelectronic elements.

摘要翻译： 提供了制造多个带盖的微电子元件的方法。 在示例性实施例中，盖晶片与装置晶片组装在一起。 期望地，将盖晶片切割成多个盖元件以去除盖子晶片的覆盖在与器件晶片的切割通道相邻的器件晶片的正面处的触点的部分。 此后，期望地，器件晶片沿着切割通道切断以提供多个带盖的微电子元件。

公开(公告)号：US07807508B2

公开(公告)日：2010-10-05

申请号：US11789694

申请日：2007-04-25

申请人： Vage Oganesian ,  Andrey Grinman ,  Charles Rosenstein ,  Felix Hazanovich ,  David Ovrutsky ,  Avi Dayan ,  Yulia Aksenton ,  Ilya Hecht

发明人： Vage Oganesian ,  Andrey Grinman ,  Charles Rosenstein ,  Felix Hazanovich ,  David Ovrutsky ,  Avi Dayan ,  Yulia Aksenton ,  Ilya Hecht

IPC分类号： H01L21/00

CPC分类号： H01L23/3114 ,  H01L21/6836 ,  H01L23/481 ,  H01L24/06 ,  H01L24/11 ,  H01L24/12 ,  H01L24/16 ,  H01L24/48 ,  H01L24/94 ,  H01L27/14618 ,  H01L27/14625 ,  H01L27/14683 ,  H01L31/0203 ,  H01L31/02325 ,  H01L2221/68327 ,  H01L2224/0231 ,  H01L2224/0236 ,  H01L2224/024 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/06136 ,  H01L2224/11334 ,  H01L2224/114 ,  H01L2224/1147 ,  H01L2224/116 ,  H01L2224/13022 ,  H01L2224/13099 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/274 ,  H01L2224/48 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/0105 ,  H01L2924/01057 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/07811 ,  H01L2924/10253 ,  H01L2924/12044 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A method is provided for fabricating a unit including a semiconductor element such as a sensor unit, e.g., for optical imaging. A semiconductor element has plurality of conductive features exposed at the front surface and semiconductive or conductive material exposed at at least one of the front and rear surfaces. At least some of the conductive features are insulated from the exposed semiconductive or conductive material. By electrodeposition, an insulative layer is formed to overlie the at least one of exposed semiconductive material or conductive material. Subsequently, a plurality of conductive contacts and a plurality of conductive traces are formed overlying the electrodeposited insulative layer, the conductive traces connecting the conductive features to the conductive contacts on the rear surface. The unit can be incorporated in a camera module having an optical element in registration with an imaging area of the semiconductor element.

摘要翻译： 提供了一种用于制造包括诸如传感器单元的半导体元件的单元的方法，例如用于光学成像。 半导体元件具有在前表面暴露的多个导电特征，并且在前表面和后表面中的至少一个处暴露的半导体或导电材料。 至少一些导电特征与暴露的半导电材料或导电材料绝缘。 通过电沉积，形成绝缘层以覆盖暴露的半导体材料或导电材料中的至少一种。 随后，多个导电触点和多个导电迹线形成在电沉积绝缘层上，导电迹线将导电特征连接到后表面上的导电触头。 该单元可以结合在具有与半导体元件的成像区域对准的光学元件的相机模块中。

公开(公告)号：US20080099907A1

公开(公告)日：2008-05-01

申请号：US11789694

申请日：2007-04-25

申请人： Vage Oganesian ,  Andrey Grinman ,  Charles Rosenstein ,  Felix Hazanovich ,  David Ovrutsky ,  Avi Dayan ,  Yulia Aksenton ,  Ilya Hecht

发明人： Vage Oganesian ,  Andrey Grinman ,  Charles Rosenstein ,  Felix Hazanovich ,  David Ovrutsky ,  Avi Dayan ,  Yulia Aksenton ,  Ilya Hecht

IPC分类号： H01L23/48 ,  H01L21/56

CPC分类号： H01L23/3114 ,  H01L21/6836 ,  H01L23/481 ,  H01L24/06 ,  H01L24/11 ,  H01L24/12 ,  H01L24/16 ,  H01L24/48 ,  H01L24/94 ,  H01L27/14618 ,  H01L27/14625 ,  H01L27/14683 ,  H01L31/0203 ,  H01L31/02325 ,  H01L2221/68327 ,  H01L2224/0231 ,  H01L2224/0236 ,  H01L2224/024 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/06136 ,  H01L2224/11334 ,  H01L2224/114 ,  H01L2224/1147 ,  H01L2224/116 ,  H01L2224/13022 ,  H01L2224/13099 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/274 ,  H01L2224/48 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/0105 ,  H01L2924/01057 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/07811 ,  H01L2924/10253 ,  H01L2924/12044 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A method is provided for fabricating a unit including a semiconductor element such as a sensor unit, e.g., for optical imaging. A semiconductor element has plurality of conductive features exposed at the front surface and semiconductive or conductive material exposed at at least one of the front and rear surfaces. At least some of the conductive features are insulated from the exposed semiconductive or conductive material. By electrodeposition, an insulative layer is formed to overlie the at least one of exposed semiconductive material or conductive material. Subsequently, a plurality of conductive contacts and a plurality of conductive traces are formed overlying the electrodeposited insulative layer, the conductive traces connecting the conductive features to the conductive contacts on the rear surface. The unit can be incorporated in a camera module having an optical element in registration with an imaging area of the semiconductor element.

摘要翻译： 提供了一种用于制造包括诸如传感器单元的半导体元件的单元的方法，例如用于光学成像。 半导体元件具有在前表面暴露的多个导电特征，并且在前表面和后表面中的至少一个处暴露的半导体或导电材料。 至少一些导电特征与暴露的半导电材料或导电材料绝缘。 通过电沉积，形成绝缘层以覆盖暴露的半导体材料或导电材料中的至少一种。 随后，多个导电触点和多个导电迹线形成在电沉积绝缘层上，导电迹线将导电特征连接到后表面上的导电触头。 该单元可以结合在具有与半导体元件的成像区域对准的光学元件的相机模块中。

公开(公告)号：US10147750B2

公开(公告)日：2018-12-04

申请号：US13145830

申请日：2010-02-03

申请人： Moshe Kriman ,  William Hudson Welch ,  Giles Humpston ,  Osher Avsian ,  Felix Hazanovich ,  Ekaterina Axelrod

发明人： Moshe Kriman ,  William Hudson Welch ,  Giles Humpston ,  Osher Avsian ,  Felix Hazanovich ,  Ekaterina Axelrod

IPC分类号： H04N5/232 ,  H01L27/146 ,  H04N5/225

摘要： The present invention provides optical imaging apparatus comprising solid state sensing elements and optical components operable to be manufactured and assembled at the wafer level.

公开(公告)号：US20110273600A1

公开(公告)日：2011-11-10

申请号：US13145830

申请日：2010-02-03

申请人： Moshe Kriman ,  William Hudson Welch ,  Giles Humpston ,  Osher Avsian ,  Felix Hazanovich ,  Ekaterina Axelrod

发明人： Moshe Kriman ,  William Hudson Welch ,  Giles Humpston ,  Osher Avsian ,  Felix Hazanovich ,  Ekaterina Axelrod

IPC分类号： H04N5/335 ,  H01L31/18

CPC分类号： H01L27/14618 ,  H01L27/14625 ,  H01L27/14683 ,  H01L2224/05001 ,  H01L2224/05009 ,  H01L2224/051 ,  H01L2224/0557 ,  H01L2224/056 ,  H01L2224/13 ,  H01L2224/13025 ,  H04N5/2254 ,  H04N5/2257 ,  H01L2924/00014

摘要： The present invention provides optical imaging apparatus comprising solid state sensing elements and optical components operable to be manufactured and assembled at the wafer level.

摘要翻译： 本发明提供了包括固态感测元件和可操作以在晶片级制造和组装的光学部件的光学成像设备。