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    Method and apparatus for wafer bonding with enhanced wafer mating
    3.
    发明授权
    Method and apparatus for wafer bonding with enhanced wafer mating 有权
    具有增强的晶片配合的晶片接合的方法和装置

    公开(公告)号：US08147630B2

    公开(公告)日：2012-04-03

    申请号：US12618846

    申请日：2009-11-16

    申请人： Gregory George

    发明人： Gregory George

    IPC分类号： B32B41/00

    CPC分类号： H01L21/67092 ,  H01L21/187 ,  Y10T29/49131

    摘要： An improved wafer-to-wafer bonding method includes aligning an upper and a lower wafer and initiating a bond at a single point by applying pressure to a single point of the upper wafer via the flow of pressurized gas through a port terminating at the single point. The bond-front propagates radially across the aligned oppositely oriented wafer surfaces at a set radial velocity rate bringing the two wafer surfaces into full atomic contact by controlling the gas pressure and/or controlling the velocity of the motion of the lower wafer up toward the upper wafer.

    摘要翻译： 改进的晶片到晶片接合方法包括：通过将加压气体流通过终止于单个点的端口向上部晶片的单个点施加压力，使上部和下部晶片对准并且在单个点处引发结合 。 键合前端以设定的径向速度径向跨越对准的相对定向的晶片表面传播，从而通过控制气体压力和/或控制下部晶片的运动速度向上移动，使两个晶片表面进入完全原子接触 晶圆。

    Apparatus and method for semiconductor wafer alignment
    4.
    发明授权
    Apparatus and method for semiconductor wafer alignment 有权
    用于半导体晶圆对准的装置和方法

    公开(公告)号：US08139219B2

    公开(公告)日：2012-03-20

    申请号：US12416779

    申请日：2009-04-01

    申请人： Gregory George

    发明人： Gregory George

    IPC分类号： G01B11/00

    CPC分类号： H01L21/681 ,  H01L21/67092 ,  H01L23/544 ,  H01L2223/5442 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

    摘要： An apparatus for aligning semiconductor wafers includes equipment for positioning a first surface of a first semiconductor wafer directly opposite to a first surface of a second semiconductor wafer and equipment for aligning a first structure on the first semiconductor wafer with a second structure on the first surface of the second semiconductor wafer. The aligning equipment comprises at least one movable alignment device configured to be moved during alignment and to be inserted between the first surface of the first semiconductor wafer and the first surface of the second semiconductor wafer. The positioning equipment are vibrationally and mechanically isolated from the alignment device motion.

    摘要翻译： 用于对准半导体晶片的装置包括用于定位与第二半导体晶片的第一表面直接相对的第一半导体晶片的第一表面的设备和用于将第一半导体晶片上的第一结构与第二半导体晶片的第一表面上的第一结构对准的设备 第二半导体晶片。 对准设备包括至少一个可移动对准装置，其构造成在对准期间移动并且被插入在第一半导体晶片的第一表面和第二半导体晶片的第一表面之间。 定位设备与对准装置的运动振动和机械隔离。

    Thin wafer carrier
    5.
    发明授权
    Thin wafer carrier 有权
    薄晶片载体

    公开(公告)号：US09159595B2

    公开(公告)日：2015-10-13

    申请号：US13022215

    申请日：2011-02-07

    申请人： Daniel T. Hurley ,  Gregory George

    发明人： Daniel T. Hurley ,  Gregory George

    IPC分类号： H01L21/683 ,  B23B31/30 ,  H01L21/67 ,  B23Q3/08

    CPC分类号： H01L21/67092 ,  B23B31/307 ,  B23Q3/088 ,  H01L21/67144 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/6838 ,  H01L2221/6834 ,  H01L2221/68381 ,  Y10T279/11

    摘要： An improved wafer carrier device for carrying and holding semiconductor wafers that have a thickness of below 100 micrometers includes a transportable wafer chuck having an enclosed vacuum reservoir and a top surface configured to support a wafer. The top surface has one or more through-openings extending from the top surface to the vacuum reservoir and the wafer is held onto the top surface via vacuum from the vacuum reservoir drawn through the through-openings.

    摘要翻译： 用于承载和保持具有低于100微米厚度的半导体晶片的改进的晶片载体装置包括可移动的晶片卡盘，其具有封闭的真空容器和被配置为支撑晶片的顶表面。 顶表面具有从顶表面延伸到真空储存器的一个或多个通孔，并且晶片通过真空从穿过通孔的真空容器被保持在顶表面上。

    Apparatus for high throughput wafer bonding
    6.
    发明授权
    Apparatus for high throughput wafer bonding 有权
    高通量晶片接合装置

    公开(公告)号：US08425715B2

    公开(公告)日：2013-04-23

    申请号：US13079446

    申请日：2011-04-04

    申请人： Gregory George

    发明人： Gregory George

    IPC分类号： B29C65/00 ,  B29C65/08 ,  B29C45/00 ,  B29C47/00 ,  B29C43/02 ,  B29C49/00 ,  B29C51/00 ,  B29C43/10 ,  B32B37/00 ,  B30B5/02 ,  B30B5/04 ,  B30B15/34 ,  H01L21/30 ,  H01L21/46 ,  H01L21/76 ,  B29D24/00 ,  B29D29/00 ,  B28B21/36 ,  A01J21/00 ,  A01J25/12 ,  A21C3/00 ,  A21C11/00 ,  A23G1/20 ,  A23G3/02 ,  A23P1/00 ,  B28B11/08 ,  B29C55/28

    CPC分类号： H01L21/6719 ,  H01L21/67092

    摘要： An industrial-scale high throughput wafer bonding apparatus includes a wafer bonder chamber extending along a main axis and comprising a plurality of chamber zones, a plurality of heater/isolator plates, a guide rod system extending along the main axis, a pair of parallel track rods extending along the main axis, and first pressure means. The chamber zones are separated from each other and thermally isolated from each other by the heater/isolator plates. The heater/isolator plates are oriented perpendicular to the main axis, are movably supported and guided by the guide rod system and are configured to move along the direction of the main axis. Each of the chamber zones is dimensioned to accommodate an aligned wafer pair and the wafer pairs are configured to be supported by the parallel track rods. The first pressure means is configured to apply a first force perpendicular to a first end heater/isolator plate. The applied first force causes the heater/isolator plates to move toward each other along the main axis and thereby causes the collapse of each chamber zone volume and the application of bonding pressure onto the wafer pairs.

    摘要翻译： 一种工业规模的高通量晶片接合装置，包括沿着主轴延伸的晶片接合室，包括多个室区，多个加热器/隔离板，沿主轴延伸的导杆系统，一对平行轨道 杆沿着主轴线延伸，以及第一压力装置。 室区彼此分离并通过加热器/隔离板彼此热隔离。 加热器/隔离板垂直于主轴定向，由导杆系统可移动地支撑和引导，并被构造成沿着主轴线的方向移动。 每个室区的尺寸被设计成适应对准的晶片对，并且晶片对构造成由平行轨道杆支撑。 第一压力装置构造成施加垂直于第一端加热器/隔离板的第一力。 所施加的第一力使得加热器/隔离板沿着主轴线彼此移动，从而导致每个室区域体积的崩溃以及将结合压力施加到晶片对上。

    Debonding equipment and methods for debonding temporary bonded wafers
    7.
    发明授权
    Debonding equipment and methods for debonding temporary bonded wafers 有权
    剥离临时粘结晶片的脱粘设备和方法

    公开(公告)号：US08366873B2

    公开(公告)日：2013-02-05

    申请号：US13085159

    申请日：2011-04-12

    申请人： Gregory George

    发明人： Gregory George

    IPC分类号： B32B38/10

    CPC分类号： B32B43/006 ,  B32B38/1858 ,  B32B2309/105 ,  B32B2457/14 ,  H01L21/67092 ,  H01L21/67132 ,  H01L21/6835 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/68381 ,  Y10T156/1126 ,  Y10T156/1132 ,  Y10T156/1168 ,  Y10T156/1174 ,  Y10T156/1944 ,  Y10T156/1956 ,  Y10T156/1978

    摘要： A debonder apparatus includes a chuck assembly, a flex plate assembly, a contact roller and a resistance roller. The chuck assembly includes a chuck and a first wafer holder holding a first wafer of a bonded wafer pair in contact with the chuck. The flex plate assembly includes a flex plate and a second wafer holder holding a second wafer of the bonded wafer pair in contact with the flex plate. The flex plate is placed above the chuck. The contact roller is arranged adjacent to a first edge of the chuck and pushes and lifts up a first edge of the flex plate, while the resistance roller traverses horizontally over the flex plate and applies a downward force upon the flex plate and thereby the bonded wafer pair delaminates along a release layer and the first and second wafers are separated from each other.

    摘要翻译： 脱粘器装置包括卡盘组件，挠性板组件，接触辊和电阻辊。 卡盘组件包括卡盘和保持与卡盘接触的接合晶片对的第一晶片的第一晶片保持架。 柔性板组件包括柔性板和保持接合晶片对的第二晶片与柔性板接触的第二晶片保持架。 柔性板放置在卡盘的上方。 接触辊被布置成与卡盘的第一边缘相邻并且将柔性板的第一边缘推起并提升，同时阻力辊横向于柔性板上的水平方向并且向上施加向下的力到柔性板上，从而将接合的晶片 沿分离层分层，并且第一和第二晶片彼此分离。

    Apparatus and method for semiconductor bonding
    8.
    发明授权
    Apparatus and method for semiconductor bonding 有权
    用于半导体结合的装置和方法

    公开(公告)号：US07948034B2

    公开(公告)日：2011-05-24

    申请号：US11766531

    申请日：2007-06-21

    申请人： Gregory George ,  Etienne Hancock ,  Robert Campbell

    发明人： Gregory George ,  Etienne Hancock ,  Robert Campbell

    IPC分类号： H01L27/12

    CPC分类号： H01L21/67092 ,  H01L21/187

    摘要： An apparatus for bonding semiconductor structures includes equipment for positioning a first surface of a first semiconductor structure directly opposite and in contact with a first surface of a second semiconductor structure and equipment for forming a bond interface area between the first surfaces of the first and second semiconductor structures by pressing the first and second semiconductor structures together with a force column configured to apply uniform pressure to the entire bond interface area between the first surfaces.

    摘要翻译： 一种用于接合半导体结构的装置包括用于定位与第二半导体结构的第一表面直接相对并接触的第一半导体结构的第一表面的设备和用于在第一和第二半导体的第一表面之间形成接合界面区域的设备 通过将第一和第二半导体结构与被配置为对第一表面之间的整个结合界面区域施加均匀压力的力列一起按压第一和第二半导体结构的结构。

    Method and apparatus for temporary bonding of ultra thin wafers
    9.
    发明授权
    Method and apparatus for temporary bonding of ultra thin wafers 有权
    用于临时粘合超薄晶片的方法和装置

    公开(公告)号：US09064686B2

    公开(公告)日：2015-06-23

    申请号：US13790684

    申请日：2013-03-08

    申请人： Gregory George ,  Stefan Lutter

    发明人： Gregory George ,  Stefan Lutter

    IPC分类号： H01L21/00 ,  H01L21/02 ,  H01L21/20 ,  H01L21/67 ,  H01L21/683

    CPC分类号： B32B37/0046 ,  B32B37/1284 ,  B32B37/18 ,  B32B2307/202 ,  B32B2457/14 ,  H01L21/0201 ,  H01L21/2007 ,  H01L21/67092 ,  H01L21/6835 ,  H01L21/6836 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68381 ,  Y10T156/17

    摘要： A method for temporary bonding first and second wafers includes, applying a first adhesive layer upon a first surface of a first wafer and then curing the first adhesive layer. Next, applying a second adhesive layer upon a first surface of a second wafer. Next, inserting the first wafer into a bonder module and holding the first wafer by an upper chuck assembly so that its first surface with the cured first adhesive layer faces down. Next, inserting the second wafer into the bonder module and placing the second wafer upon a lower chuck assembly so that the second adhesive layer faces up and is opposite to the first adhesive layer. Next, moving the lower chuck assembly upwards and bringing the second adhesive layer in contact with the cured first adhesive layer, and then curing the second adhesive layer.

    摘要翻译： 临时粘合第一和第二晶片的方法包括：在第一晶片的第一表面上施加第一粘合剂层，然后固化第一粘合剂层。 接下来，将第二粘合剂层施加到第二晶片的第一表面上。 接下来，将第一晶片插入粘合剂模块中，并通过上卡盘组件保持第一晶片，使得其第一表面与固化的第一粘合剂层面朝下。 接下来，将第二晶片插入到接合器模块中，并将第二晶片放置在下卡盘组件上，使得第二粘合剂层面向上并与第一粘合剂层相对。 接下来，向下移动下卡盘组件并使第二粘合剂层与固化的第一粘合剂层接触，然后固化第二粘合剂层。