公开(公告)号：US20070249156A1

公开(公告)日：2007-10-25

申请号：US11672608

申请日：2007-02-08

申请人： Griselda Bonilla ,  Stephen M. Gates ,  Shom Ponoth ,  Satyanarayana V. Nitta ,  Sampath Purushothaman

发明人： Griselda Bonilla ,  Stephen M. Gates ,  Shom Ponoth ,  Satyanarayana V. Nitta ,  Sampath Purushothaman

IPC分类号： H01L21/4763

CPC分类号： H01L21/76826 ,  H01L21/02074 ,  H01L21/3105 ,  H01L21/31058 ,  H01L21/76883

摘要： A method is described for the repair of process induced damage sustained by low-k organosilicate dielectrics as a result of reactive ion etch, resist strip, wet clean and CMP operations in a hard mask free integration of these dielectrics into microelectronic interconnect structures incorporating a dielectric cap which is an etch stop and barrier layer. In situ reaction of the damaged regions with a suitable silylation agent just prior to a passivation barrier cap deposition is proposed as the most efficacious means to repair all the damage sustained by the dielectric. Variations of this method which include ex situ rather than in situ silylation are also described for use with hard mask free integration with selective barrier caps.

摘要翻译： 描述了一种用于修复由低k有机硅酸盐电介质持续的过程诱导的损伤作为反应离子蚀刻，抗蚀剂条，湿清洁和CMP操作在将这些电介质纳入包含电介质的微电子互连结构的硬掩模中的CMP操作的方法 盖是蚀刻停止层和阻挡层。 在钝化阻挡层沉积之前，损伤区域与合适的甲硅烷基化剂的原位反应被提出作为修复由电介质所承受的所有损伤的最有效手段。 还描述了包括异位原位甲硅烷基化的这种方法的变化，用于与选择性屏障帽的硬掩模自由积分。

公开(公告)号：US20090311859A1

公开(公告)日：2009-12-17

申请号：US12544088

申请日：2009-08-19

申请人： Griselda Bonilla ,  Stephen M. Gates ,  Shom Ponoth ,  Satyanarayana V. Nitta ,  Sampath Purushothaman

发明人： Griselda Bonilla ,  Stephen M. Gates ,  Shom Ponoth ,  Satyanarayana V. Nitta ,  Sampath Purushothaman

IPC分类号： H01L21/3205 ,  H01L21/31

CPC分类号： H01L21/76826 ,  H01L21/02074 ,  H01L21/3105 ,  H01L21/31058 ,  H01L21/76883

摘要： A method of fabricating an interconnect structure on a substrate includes steps of: providing a dielectric with at least one etched opening; filling the at least one etched opening with at least one conductive material; planarizing the conductive material to provide a planarized structure; subjecting the planarized structure to a plasma preclean process; and exposing the planarized structure to a silylating repair agent which is a silane derivative; and forming a dielectric cap layer on the planarized structure.

摘要翻译： 在衬底上制造互连结构的方法包括以下步骤：为电介质提供至少一个蚀刻开口; 用至少一种导电材料填充所述至少一个蚀刻开口; 平面化导电材料以提供平坦化结构; 对平坦化结构进行等离子体预清洗处理; 并将平坦化结构暴露于作为硅烷衍生物的甲硅烷基化修复剂; 以及在所述平坦化结构上形成电介质盖层。

公开(公告)号：US08491987B2

公开(公告)日：2013-07-23

申请号：US12164647

申请日：2008-06-30

申请人： Matthew E Colburn ,  Stephen M Gates ,  Jeffrey C Hedrick ,  Elbert Huang ,  Satyanarayana V Nitta ,  Sampath Purushothaman ,  Muthumanickam Sankarapandian

发明人： Matthew E Colburn ,  Stephen M Gates ,  Jeffrey C Hedrick ,  Elbert Huang ,  Satyanarayana V Nitta ,  Sampath Purushothaman ,  Muthumanickam Sankarapandian

IPC分类号： H01L23/58 ,  C08L53/00

CPC分类号： H05K3/0079 ,  H01L21/0331 ,  H01L21/76849 ,  H05K3/282 ,  H05K2203/1173 ,  Y10T428/24802

摘要： A method for forming a self aligned pattern on an existing pattern on a substrate comprising applying a coating of a solution containing a masking material in a carrier, the masking material having an affinity for portions of the existing pattern; and allowing at least a portion of the masking material to preferentially assemble to the portions of the existing pattern. The pattern may be comprised of a first set of regions of the substrate having a first atomic composition and a second set of regions of the substrate having a second atomic composition different from the first composition. The first set of regions may include one or more metal elements and the second set of regions may include a dielectric. The first and second regions may be treated to have different surface properties. Structures made in accordance with the method. Compositions useful for practicing the method.

摘要翻译： 一种用于在衬底上的现有图案上形成自对准图案的方法，包括在载体中涂覆含有掩蔽材料的溶液的涂层，所述掩模材料对现有图案的部分具有亲和力; 并且允许掩模材料的至少一部分优先组装到现有图案的部分。 该图案可以由具有第一原子组成的衬底的第一组区域和第二组衬底的区域组成，其具有不同于第一组成的第二原子组成。 第一组区域可以包括一个或多个金属元件，并且第二组区域可以包括电介质。 可以将第一和第二区域处理成具有不同的表面性质。 按照该方法制造的结构。 用于练习该方法的组合物。

公开(公告)号：US07948051B2

公开(公告)日：2011-05-24

申请号：US12164599

申请日：2008-06-30

申请人： Matthew E Colburn ,  Stephen M Gates ,  Jeffrey C Hedrick ,  Elbert Huang ,  Satyanarayana V Nitta ,  Sampath Purushothaman ,  Muthumanickam Sankarapandian

发明人： Matthew E Colburn ,  Stephen M Gates ,  Jeffrey C Hedrick ,  Elbert Huang ,  Satyanarayana V Nitta ,  Sampath Purushothaman ,  Muthumanickam Sankarapandian

IPC分类号： H01L21/70

CPC分类号： H05K3/0079 ,  H01L21/0331 ,  H01L21/76849 ,  H05K3/282 ,  H05K2203/1173 ,  Y10T428/24802

摘要： A method for forming a self aligned pattern on an existing pattern on a substrate comprising applying a coating of a solution containing a masking material in a carrier, the masking material having an affinity for portions of the existing pattern; and allowing at least a portion of the masking material to preferentially assemble to the portions of the existing pattern. The pattern may be comprised of a first set of regions of the substrate having a first atomic composition and a second set of regions of the substrate having a second atomic composition different from the first composition. The first set of regions may include one or more metal elements and the second set of regions may include a dielectric. The first and second regions may be treated to have different surface properties. Structures made in accordance with the method. Compositions useful for practicing the method.

摘要翻译： 一种用于在衬底上的现有图案上形成自对准图案的方法，包括在载体中涂覆含有掩蔽材料的溶液的涂层，所述掩模材料对现有图案的部分具有亲和力; 并且允许掩模材料的至少一部分优先组装到现有图案的部分。 该图案可以由具有第一原子组成的衬底的第一组区域和第二组衬底的区域组成，其具有不同于第一组成的第二原子组成。 第一组区域可以包括一个或多个金属元件，并且第二组区域可以包括电介质。 可以将第一和第二区域处理成具有不同的表面性质。 按照该方法制造的结构。 用于练习该方法的组合物。

公开(公告)号：US20080265415A1

公开(公告)日：2008-10-30

申请号：US12164599

申请日：2008-06-30

申请人： Matthew E. Colburn ,  Stephen M. Gates ,  Jeffrey C. Hedrick ,  Elbert Huang ,  Satyanarayana V. Nitta ,  Sampath Purushothaman ,  Muthumanickam Sankarapandian

发明人： Matthew E. Colburn ,  Stephen M. Gates ,  Jeffrey C. Hedrick ,  Elbert Huang ,  Satyanarayana V. Nitta ,  Sampath Purushothaman ,  Muthumanickam Sankarapandian

IPC分类号： H01L23/52

CPC分类号： H05K3/0079 ,  H01L21/0331 ,  H01L21/76849 ,  H05K3/282 ,  H05K2203/1173 ,  Y10T428/24802

摘要： A method for forming a self aligned pattern on an existing pattern on a substrate comprising applying a coating of a solution containing a masking material in a carrier, the masking material having an affinity for portions of the existing pattern; and allowing at least a portion of the masking material to preferentially assemble to the portions of the existing pattern. The pattern may be comprised of a first set of regions of the substrate having a first atomic composition and a second set of regions of the substrate having a second atomic composition different from the first composition. The first set of regions may include one or more metal elements and the second set of regions may include a dielectric. The first and second regions may be treated to have different surface properties. Structures made in accordance with the method. Compositions useful for practicing the method.

公开(公告)号：US06641899B1

公开(公告)日：2003-11-04

申请号：US10287935

申请日：2002-11-05

申请人： Matthew E Colburn ,  Stephen M Gates ,  Jeffrey C Hedrick ,  Elbert Huang ,  Satyanarayana V Nitta ,  Sampath Purushothaman ,  Muthumanickam Sankarapandian

发明人： Matthew E Colburn ,  Stephen M Gates ,  Jeffrey C Hedrick ,  Elbert Huang ,  Satyanarayana V Nitta ,  Sampath Purushothaman ,  Muthumanickam Sankarapandian

IPC分类号： B32B300

CPC分类号： H01L21/76849 ,  B82Y30/00 ,  G03F7/165 ,  H01L21/0331 ,  H01L21/31058 ,  H05K3/0079 ,  Y10T428/24802 ,  Y10T428/24917 ,  Y10T428/24926

摘要： A method for forming a self aligned pattern on an existing pattern on a substrate comprising applying a coating of the masking material to the substrate; and allowing at least a portion of the masking material to preferentially attach to portions of the existing pattern. The pattern is comprised of a first set of regions of the substrate having a first atomic composition and a second set of regions of the substrate having a second atomic composition different from the first composition. The first set of regions may include one or more metal elements and the second set of regions may include a dielectric. The masking material may comprise a polymer containing a reactive grafting site that selectively binds to the portions of the pattern. The masking material may include a polymer that binds to the portions of the pattern to provide a layer of functional groups suitable for polymerization initiation, a reactive molecule having functional groups suitable for polymerization propagation, or a reactive molecule, wherein reaction of the reactive molecule with the portion of the pattern generates a layer having reactive groups, which participate in step growth polymerization. Structures in accordance with the method. Compositions for practicing the method.

公开(公告)号：US07485341B2

公开(公告)日：2009-02-03

申请号：US10421306

申请日：2003-04-23

申请人： Matthew E Colburn ,  Stephen M Gates ,  Jeffrey C Hedrick ,  Elbert Huang ,  Satyanarayana V Nitta ,  Sampath Purushothaman ,  Muthumanickam Sankarapandian

发明人： Matthew E Colburn ,  Stephen M Gates ,  Jeffrey C Hedrick ,  Elbert Huang ,  Satyanarayana V Nitta ,  Sampath Purushothaman ,  Muthumanickam Sankarapandian

IPC分类号： B05D1/32

CPC分类号： H01L21/76849 ,  B82Y30/00 ,  G03F7/165 ,  H01L21/0331 ,  H01L21/31058 ,  H05K3/0079 ,  Y10T428/24802 ,  Y10T428/24917 ,  Y10T428/24926

摘要： A method for forming a self aligned pattern on an existing pattern on a substrate comprising applying a coating of the masking material to the substrate; and allowing at least a portion of the masking material to preferentially attach to portions of the existing pattern. The pattern is comprised of a first set of regions of the substrate having a first atomic composition and a second set of regions of the substrate having a second atomic composition different from the first composition. The first set of regions may include one or more metal elements and the second set of regions may include a dielectric. The masking material may comprise a polymer containing a reactive grafting site that selectively binds to the portions of the pattern. The masking material may include a polymer that binds to the portions of the pattern to provide a layer of functional groups suitable for polymerization initiation, a reactive molecule having functional groups suitable for polymerization propagation, or a reactive molecule, wherein reaction of the reactive molecule with the portion of the pattern generates a layer having reactive groups, which participate in step growth polymerization. Structures in accordance with the method. Compositions for practicing the method.

摘要翻译： 一种用于在衬底上的现有图案上形成自对准图案的方法，包括将掩模材料的涂层施加到衬底上; 并且允许掩模材料的至少一部分优先地附着到现有图案的部分上。 该图案由具有第一原子组成的基底的第一组区域和具有不同于第一组成的第二原子组成的基底的第二组区域组成。 第一组区域可以包括一个或多个金属元件，并且第二组区域可以包括电介质。 掩模材料可以包含含有选择性结合图案部分的反应性接枝位点的聚合物。 掩蔽材料可以包括聚合物，其结合图案的部分以提供适于聚合起始的官能团层，具有适用于聚合扩展的官能团的反应性分子或反应性分子，其中反应性分子与 图案的部分产生具有反应性基团的层，其参与步骤生长聚合。 结构按照方法。 组合练习方法。

公开(公告)号：US20080265382A1

公开(公告)日：2008-10-30

申请号：US12164647

申请日：2008-06-30

申请人： Matthew E. Colburn ,  Stephen M. Gates ,  Jeffrey C. Hedrick ,  Elbert Huang ,  Satyanarayana V. Nitta ,  Sampath Purushothaman ,  Muthumanickam Sankarapandian

发明人： Matthew E. Colburn ,  Stephen M. Gates ,  Jeffrey C. Hedrick ,  Elbert Huang ,  Satyanarayana V. Nitta ,  Sampath Purushothaman ,  Muthumanickam Sankarapandian

IPC分类号： H01L23/58 ,  C08L53/00

CPC分类号： H05K3/0079 ,  H01L21/0331 ,  H01L21/76849 ,  H05K3/282 ,  H05K2203/1173 ,  Y10T428/24802

摘要： A method for forming a self aligned pattern on an existing pattern on a substrate comprising applying a coating of a solution containing a masking material in a carrier, the masking material having an affinity for portions of the existing pattern; and allowing at least a portion of the masking material to preferentially assemble to the portions of the existing pattern. The pattern may be comprised of a first set of regions of the substrate having a first atomic composition and a second set of regions of the substrate having a second atomic composition different from the first composition. The first set of regions may include one or more metal elements and the second set of regions may include a dielectric. The first and second regions may be treated to have different surface properties. Structures made in accordance with the method. Compositions useful for practicing the method.

摘要翻译： 一种用于在衬底上的现有图案上形成自对准图案的方法，包括在载体中涂覆含有掩蔽材料的溶液的涂层，所述掩模材料对现有图案的部分具有亲和力; 并且允许掩模材料的至少一部分优先组装到现有图案的部分。 该图案可以由具有第一原子组成的衬底的第一组区域和第二组衬底的区域组成，其具有不同于第一组成的第二原子组成。 第一组区域可以包括一个或多个金属元件，并且第二组区域可以包括电介质。 可以将第一和第二区域处理成具有不同的表面性质。 按照该方法制造的结构。 用于练习该方法的组合物。

公开(公告)号：US06911400B2

公开(公告)日：2005-06-28

申请号：US10287905

申请日：2002-11-05

申请人： Matthew E Colburn ,  Stephen M Gates ,  Jeffrey C Hedrick ,  Elbert Huang ,  Satyanarayana V Nitta ,  Sampath Purushothaman ,  Muthumanickam Sankarapandian

发明人： Matthew E Colburn ,  Stephen M Gates ,  Jeffrey C Hedrick ,  Elbert Huang ,  Satyanarayana V Nitta ,  Sampath Purushothaman ,  Muthumanickam Sankarapandian

IPC分类号： H01L21/027 ,  B32B3/00 ,  G03F7/00 ,  G03F7/16 ,  G03F7/26 ,  H01L21/31 ,  H01L21/3105 ,  H01L21/469

CPC分类号： H05K3/0079 ,  H01L21/0331 ,  H01L21/76849 ,  H05K3/282 ,  H05K2203/1173 ,  Y10T428/24802

摘要： A method for forming a self aligned pattern on an existing pattern on a substrate comprising applying a coating of a solution containing a masking material in a carrier, the masking material having an affinity for portions of the existing pattern; and allowing at least a portion of the masking material to preferentially assemble to the portions of the existing pattern. The pattern may be comprised of a first set of regions of the substrate having a first atomic composition and a second set of regions of the substrate having a second atomic composition different from the first composition. The first set of regions may include one or more metal elements and the second set of regions may include a dielectric. The first and second regions may be treated to have different surface properties. Structures made in accordance with the method. Compositions useful for practicing the method.

公开(公告)号：US07892940B2

公开(公告)日：2011-02-22

申请号：US11851123

申请日：2007-09-06

申请人： Daniel C. Edelstein ,  Matthew E. Colburn ,  Edward C. Cooney, III ,  Timothy J. Dalton ,  John A. Fitzsimmons ,  Jeffrey P. Gambino ,  Elbert E. Huang ,  Michael W. Lane ,  Vincent J. McGahay ,  Lee M. Nicholson ,  Satyanarayana V. Nitta ,  Sampath Purushothaman ,  Sujatha Sankaran ,  Thomas M. Shaw ,  Andrew H. Simon ,  Anthony K. Stamper

发明人： Daniel C. Edelstein ,  Matthew E. Colburn ,  Edward C. Cooney, III ,  Timothy J. Dalton ,  John A. Fitzsimmons ,  Jeffrey P. Gambino ,  Elbert E. Huang ,  Michael W. Lane ,  Vincent J. McGahay ,  Lee M. Nicholson ,  Satyanarayana V. Nitta ,  Sampath Purushothaman ,  Sujatha Sankaran ,  Thomas M. Shaw ,  Andrew H. Simon ,  Anthony K. Stamper

IPC分类号： H01L21/00

CPC分类号： B82Y30/00 ,  H01L21/0332 ,  H01L21/31111 ,  H01L21/31144 ,  H01L21/7682 ,  H01L21/76829 ,  H01L23/5222 ,  H01L23/53295 ,  H01L2924/0002 ,  Y10S438/947 ,  H01L2924/00

摘要： Method of manufacturing a structure which includes the steps of providing a structure having an insulator layer with at least one interconnect, forming a sub lithographic template mask over the insulator layer, and selectively etching the insulator layer through the sub lithographic template mask to form sub lithographic features spanning to a sidewall of the at least one interconnect.

摘要翻译： 一种制造结构的方法，包括以下步骤：提供具有至少一个互连的绝缘体层的结构，在绝缘体层上形成次级光刻模板掩模，以及通过次级光刻模板掩模选择性地蚀刻绝缘体层以形成次光刻 特征跨越至少一个互连的侧壁。