公开(公告)号：US4820656A

公开(公告)日：1989-04-11

申请号：US86914

申请日：1987-08-19

申请人： Hans-Joachim Schulze ,  Reinhold Kuhnert

发明人： Hans-Joachim Schulze ,  Reinhold Kuhnert

IPC分类号： H01L21/223 ,  H01L21/033 ,  H01L21/22 ,  H01L21/225 ,  H01L29/06 ,  H01L29/36 ,  H01L21/383

CPC分类号： H01L21/0334 ,  H01L21/22 ,  H01L21/2252 ,  H01L29/0615 ,  H01L29/36 ,  Y10S438/965

摘要： A method for producing a p-doped semiconductor region in an n-conductive semiconductor body by means of diffusion using a combination of both aluminum and boron as dopants. The semiconductor body is positioned within a hollow silicon member which itself is located within a refractory tube. The refractory tube is evacuated to a very low pressure and then the interior of the tube is heated for a time and at a temperature sufficient to diffuse both aluminum and boron into the semiconductor body.

摘要翻译： 通过使用铝和硼的组合作为掺杂剂的扩散，在n导电半导体主体中产生p掺杂半导体区域的方法。 半导体本体位于中空硅构件内，其本身位于耐火管内。 将耐火管抽真空至非常低的压力，然后将管内部加热足以将铝和硼扩散到半导体本体中的时间和温度。

公开(公告)号：US5204273A

公开(公告)日：1993-04-20

申请号：US723800

申请日：1991-07-01

申请人： Reinhold Kuhnert ,  Heinz Mitlehner ,  Hans-Joachim Schulze ,  Frank Pfirsch

发明人： Reinhold Kuhnert ,  Heinz Mitlehner ,  Hans-Joachim Schulze ,  Frank Pfirsch

IPC分类号： H01L29/417 ,  H01L29/74

CPC分类号： H01L29/7428 ,  H01L29/7408

摘要： Thyristor with defined lateral resistor and method for the manufacturing thereof. The thyristor has a resistor area (5) for the generation of a lateral resistor, for example between an emitter field (8) and an auxiliary emitter field (7), whereby the resistor are (5) has a defined lower doping concentration than the layer (2) surrounding it. The defined lower doping concentration is generated by recesses (3) in an occupation layer and can be adjusted by the ratio of the widths alternately arranged recesses (3) and ribs (4). The recess (3) and the ribs (4) are generated either by diffusion and subsequent etching or by implantation with an implantation mask, before the deposition layer is driven into the semiconductor body of the thyristor by heat supply from a surface.

摘要翻译： 具有限定横向电阻的晶闸管及其制造方法。 晶闸管具有用于产生横向电阻器的电阻器区域（5），例如在发射极场（8）和辅助发射极场（7）之间，由此电阻器（5）具有比 层（2）周围。 限定的较低掺杂浓度由占用层中的凹部（3）产生，并且可以通过交替布置的凹部（3）和肋（4）的宽度的比率来调节。 在通过从表面的热供应将沉积层驱动到晶闸管的半导体本体之前，通过扩散和随后的蚀刻或通过注入掩模注入来产生凹部（3）和肋（4）。

公开(公告)号：US4757031A

公开(公告)日：1988-07-12

申请号：US086269

申请日：1987-08-17

申请人： Reinhold Kuhnert ,  Hans-Joachim Schulze

发明人： Reinhold Kuhnert ,  Hans-Joachim Schulze

IPC分类号： H01L21/033 ,  H01L21/225 ,  H01L29/06 ,  H01L29/74 ,  H01L21/383

CPC分类号： H01L29/0615 ,  H01L21/0334 ,  H01L21/2252 ,  Y10S438/965

摘要： A method for the manufacture of a pn-junction having high dielectric strength starting with a doped semiconductor body of a first conductivity type. A zone of a second conductivity type is formed in the semiconductor body inwardly from a surface thereof. At least one recess is then provided inwardly from the surface and including a recess which is formed at the extreme marginal edge of the semiconductor body. Dopant of the second conductivity type is diffused into the semiconductor body to form zones of varying dopant penetration depths from the center of the body to the marginal edge.

摘要翻译： 一种从第一导电类型的掺杂半导体本体开始制造具有高介电强度的pn结的方法。 第二导电类型的区域从其表面向内形成在半导体本体中。 然后至少一个凹部从表面向内提供，并且包括形成在半导体主体的最外边缘处的凹部。 第二导电类型的掺杂剂扩散到半导体本体中以形成从主体的中心到边缘的不同掺杂剂穿透深度的区域。

公开(公告)号：US10651037B2

公开(公告)日：2020-05-12

申请号：US11232735

申请日：2005-09-22

申请人： Hans-Joachim Schulze ,  Anton Mauder ,  Helmut Strack ,  Holger Schulze

发明人： Hans-Joachim Schulze ,  Anton Mauder ,  Helmut Strack ,  Holger Schulze

IPC分类号： H01L21/265 ,  H01L29/66 ,  H01L21/304 ,  H01L29/10 ,  H01L21/324 ,  H01L21/263 ,  H01L29/08

摘要： One embodiment of the invention relates to a method for fabricating a doped semiconductor zone in a semiconductor body. The method includes implanting dopant particles via one side into the semiconductor body or applying a layer containing dopant particles to one side of the semiconductor body. The method also includes irradiating the semiconductor body via the one side with further particles at least in the region containing the dopant particles. The method finally includes carrying out a thermal treatment by means of which the semiconductor body is heated, at least in the region containing the dopant particles, to a predetermined temperature in order to activate the implanted dopant particles, said temperature being less than 700° C.

公开(公告)号：US09553178B2

公开(公告)日：2017-01-24

申请号：US12977755

申请日：2010-12-23

申请人： Franz Hirler ,  Anton Mauder ,  Frank Pfirsch ,  Hans-Joachim Schulze

发明人： Franz Hirler ,  Anton Mauder ,  Frank Pfirsch ,  Hans-Joachim Schulze

IPC分类号： H01L29/66 ,  H01L29/739 ,  H01L29/06 ,  H01L29/423

CPC分类号： H01L29/7397 ,  H01L29/0696 ,  H01L29/4236

摘要： A semiconductor component includes a first emitter zone of a first conductivity type, a second emitter zone of a second conductivity type, a first base zone arranged between the first and second emitter zones and a first control structure. The first control structure includes a control electrode arranged adjacent the first emitter zone, the control electrode being insulated from the first emitter zone by a first dielectric layer and extending in a current flow direction of the semiconductor component. The first control structure includes a first control connection and at least one first connection zone arranged between the first control connection and the control electrode and comprising a semiconductor material.

摘要翻译： 半导体部件包括第一导电类型的第一发射极区域，第二导电类型的第二发射极区域，布置在第一和第二发射极区域之间的第一基极区域和第一控制结构。 第一控制结构包括布置在第一发射区附近的控制电极，控制电极通过第一介电层与第一发射区绝缘，并沿着半导体部件的电流流动方向延伸。 第一控制结构包括第一控制连接和布置在第一控制连接和控制电极之间并且包括半导体材料的至少一个第一连接区域。

公开(公告)号：US09153674B2

公开(公告)日：2015-10-06

申请号：US12421322

申请日：2009-04-09

申请人： Hans-Joachim Schulze

发明人： Hans-Joachim Schulze

IPC分类号： H01L29/739 ,  H01L29/06 ,  H01L29/10

CPC分类号： H01L29/7395 ,  H01L29/0615 ,  H01L29/0696 ,  H01L29/083 ,  H01L29/0834 ,  H01L29/1095 ,  H01L29/7393

摘要： A semiconductor device is disclosed. One embodiment provides a cell area and a junction termination area at a first side of a semiconductor zone of a first conductivity type. At least one first region of a second conductivity type is formed at a second side of the semiconductor zone. The at least one first region is opposed to the cell area region. At least one second region of the second conductivity type is formed at the second side of the semiconductor zone. The at least one second region is opposed to the cell area region and has a lateral dimension smaller than the at least first region.

摘要翻译： 公开了一种半导体器件。 一个实施例提供在第一导电类型的半导体区域的第一侧处的单元区域和结端接区域。 至少一个第二导电类型的第一区域形成在半导体区域的第二侧。 所述至少一个第一区域与所述单元区域区域相对。 第二导电类型的至少一个第二区域形成在半导体区域的第二侧。 所述至少一个第二区域与所述单元区域区域相对并且具有小于所述至少第一区域的横向尺寸。

公开(公告)号：US08993372B2

公开(公告)日：2015-03-31

申请号：US13407731

申请日：2012-02-28

申请人： Manfred Schneegans ,  Carsten Ahrens ,  Adolf Koller ,  Gerald Lackner ,  Anton Mauder ,  Hans-Joachim Schulze

发明人： Manfred Schneegans ,  Carsten Ahrens ,  Adolf Koller ,  Gerald Lackner ,  Anton Mauder ,  Hans-Joachim Schulze

IPC分类号： H01L21/00 ,  H01L21/36 ,  H01L21/02 ,  H01L21/762 ,  H01L29/861

CPC分类号： H01L21/02658 ,  H01L21/76202 ,  H01L21/76224 ,  H01L29/8611 ,  Y10T428/218

摘要： Exemplary embodiments of a method for producing a semiconductor component having a polycrystalline semiconductor body region are disclosed, wherein the polycrystalline semiconductor body region is produced between the first and second surfaces of the semiconductor body in a semiconductor component section, wherein an electromagnetic radiation having a wavelength of at least 1064 nm is introduced into the semiconductor body in a manner focused onto a position in the semiconductor component section of the semiconductor body and wherein the power density of the radiation at the position is less than 1×108 W/cm2.

摘要翻译： 公开了一种用于制造具有多晶半导体体区域的半导体部件的制造方法的实施例，其中在半导体部件部分中在半导体主体的第一和第二表面之间产生多晶半导体本体区域，其中具有波长 至少1064nm的光束以聚焦到半导体主体的半导体部件部分中的位置的方式被引入半导体本体，并且其中该位置处的辐射的功率密度小于1×108W / cm 2。

公开(公告)号：US08946850B2

公开(公告)日：2015-02-03

申请号：US13312180

申请日：2011-12-06

申请人： Hans-Joachim Schulze ,  Anton Mauder ,  Frank Pfirsch

发明人： Hans-Joachim Schulze ,  Anton Mauder ,  Frank Pfirsch

IPC分类号： H01L31/058

CPC分类号： H01L23/62 ,  H01L27/0251 ,  H01L27/0629 ,  H01L27/088 ,  H01L29/0696 ,  H01L29/41766 ,  H01L29/42364 ,  H01L29/7803 ,  H01L2924/0002 ,  H01L2924/00

摘要： In one embodiment of an integrated circuit, the integrated circuit includes a power transistor with a power control terminal, a first power load terminal and a second power load terminal. The integrated circuit further includes an auxiliary transistor with an auxiliary control terminal, a first auxiliary load terminal and a second auxiliary load terminal. The first auxiliary load terminal is electrically coupled to the power control terminal. The integrated circuit further includes a capacitor with a first capacitor electrode, a second capacitor electrode and a capacitor dielectric layer. The capacitor dielectric layer includes at least one of a ferroelectric material and a paraelectric material. The first capacitor electrode is electrically coupled to the auxiliary control terminal.

摘要翻译： 在集成电路的一个实施例中，集成电路包括具有功率控制端子的功率晶体管，第一功率负载端子和第二功率负载端子。 集成电路还包括具有辅助控制端子的辅助晶体管，第一辅助负载端子和第二辅助负载端子。 第一辅助负载端子电耦合到功率控制端子。 集成电路还包括具有第一电容器电极，第二电容器电极和电容器电介质层的电容器。 电容介质层包括铁电材料和顺电材料中的至少一种。 第一电容器电极电耦合到辅助控制端子。

公开(公告)号：US08772126B2

公开(公告)日：2014-07-08

申请号：US13571769

申请日：2012-08-10

申请人： Hans-Joachim Schulze ,  Anton Mauder

发明人： Hans-Joachim Schulze ,  Anton Mauder

IPC分类号： H01L21/8238 ,  H01L21/8234 ,  H01L21/762 ,  H01L21/683 ,  H01L41/338

CPC分类号： H01L29/06 ,  B24B7/228 ,  B24B37/013 ,  B24B37/042 ,  H01L21/302 ,  H01L21/304 ,  H01L21/30625 ,  H01L21/3247 ,  H01L21/764 ,  H01L21/78 ,  H01L22/26 ,  H01L29/66333

摘要： A cavity is etched from a front surface into a semiconductor substrate. After providing an etch stop structure at the bottom of the cavity, the cavity is closed. From a back surface opposite to the front surface the semiconductor substrate is grinded at least up to an edge of the etch stop structure oriented to the back surface. Providing the etch stop structure at the bottom of an etched cavity allows for precisely adjusting a thickness of a semiconductor body of a semiconductor device.

摘要翻译： 将腔从前表面刻蚀成半导体衬底。 在腔的底部提供蚀刻停止结构之后，空腔被关闭。 从与前表面相对的后表面，半导体衬底至少被研磨到定向到后表面的蚀刻停止结构的边缘。 在蚀刻腔的底部提供蚀刻停止结构允许精确地调节半导体器件的半导体本体的厚度。

公开(公告)号：US08680645B2

公开(公告)日：2014-03-25

申请号：US13205759

申请日：2011-08-09

申请人： Franz Hirler ,  Anton Mauder ,  Hans-Joachim Schulze

发明人： Franz Hirler ,  Anton Mauder ,  Hans-Joachim Schulze

IPC分类号： H01L29/00 ,  H01L27/08 ,  H01L21/8238 ,  H01L21/04

CPC分类号： H01L29/0649 ,  H01L21/761 ,  H01L29/045 ,  H01L29/0653 ,  H01L29/0661 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/407 ,  H01L29/66136 ,  H01L29/66734 ,  H01L29/7397 ,  H01L29/7803 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/8613 ,  H01L29/868

摘要： A semiconductor device having a semiconductor die is provided. The semiconductor die includes a main horizontal surface, an outer edge, an active area, and a peripheral area. The peripheral area includes a dielectric structure surrounding the active area and extending from the main horizontal surface into the semiconductor die. The dielectric structure includes, in a horizontal cross-section, at least one substantially L-shaped portion that is inclined against the outer edge. Further, a method for forming a semiconductor device is provided.

摘要翻译： 提供具有半导体管芯的半导体器件。 半导体管芯包括主水平表面，外边缘，有效区域和周边区域。 周边区域包括围绕有源区域并从主水平表面延伸到半导体管芯中的电介质结构。 电介质结构在水平截面中包括至少一个相对于外边缘倾斜的大致L形的部分。 此外，提供了一种用于形成半导体器件的方法。