利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

22 条记录 (耗时 0.027 秒)

    SPIN TRANSISTOR USING N-TYPE AND P-TYPE DOUBLE CARRIER SUPPLY LAYER STRUCTURE
    5.
    发明申请
    SPIN TRANSISTOR USING N-TYPE AND P-TYPE DOUBLE CARRIER SUPPLY LAYER STRUCTURE 有权
    使用N型和P型双载波供电层结构的旋转晶体管

    公开(公告)号：US20110284937A1

    公开(公告)日：2011-11-24

    申请号：US12858702

    申请日：2010-08-18

    申请人： Hyung Jun KIM ,  Jin Dong Song ,  Hyun Cheol Koo ,  Kyung Ho Kim ,  Suk Hee Han

    发明人： Hyung Jun KIM ,  Jin Dong Song ,  Hyun Cheol Koo ,  Kyung Ho Kim ,  Suk Hee Han

    IPC分类号： H01L29/82

    CPC分类号： H01L29/66984 ,  G11C11/161 ,  G11C11/1675 ,  G11C11/18 ,  Y10S257/902

    摘要： A spin transistor that includes: a semiconductor substrate including an upper cladding layer and a lower cladding layer, and a channel layer interposed between the upper and lower cladding layers; a ferromagnetic source and a ferromagnetic drain formed on the semiconductor substrate and spaced from each other in a length direction of the channel layer; and a gate electrode formed on the semiconductor substrate between the source and the drain and having applied a gate voltage thereto to control a spin precession of an electron passing through the channel layer, wherein the semiconductor substrate includes a first carrier supply layer of a first conductivity type disposed below the lower cladding layer and supplying carriers to the channel layer, and a second carrier supply layer of a second conductivity type opposite to the first conductivity type formed on the upper cladding layer and supplying the carriers to the channel layer.

    摘要翻译： 一种自旋晶体管，包括：包括上包层和下包层的半导体衬底，以及介于上包层和下包层之间的沟道层; 形成在所述半导体基板上并且在所述沟道层的长度方向上彼此间隔开的铁磁源和铁磁性漏极; 以及形成在所述源极和漏极之间的所述半导体衬底上并且施加了栅极电压以用于控制通过所述沟道层的电子的自旋进动的栅电极，其中所述半导体衬底包括具有第一导电性的第一载流子供应层 类型，其设置在所述下包层下方并且将沟道层供给到所述沟道层;以及第二导电类型的第二载流子供应层，其形成在所述上包层上并且将所述载流子提供给所述沟道层。

    COMPLEMENTARY SPIN TRANSISTOR LOGIC CIRCUIT
    6.
    发明申请
    COMPLEMENTARY SPIN TRANSISTOR LOGIC CIRCUIT 有权
    补充旋转晶体管逻辑电路

    公开(公告)号：US20110279146A1

    公开(公告)日：2011-11-17

    申请号：US12899778

    申请日：2010-10-07

    申请人： Hyun Cheol Koo ,  Suk Hee Han ,  Joon Yeon Chang ,  Hyung Jun Kim ,  Jun Woo Choi

    发明人： Hyun Cheol Koo ,  Suk Hee Han ,  Joon Yeon Chang ,  Hyung Jun Kim ,  Jun Woo Choi

    IPC分类号： H03K19/091

    CPC分类号： H03K19/091 ,  B82Y10/00 ,  G11C11/16 ,  H03K19/18

    摘要： There is provided a complementary spin transistor logic circuit, including: a parallel spin transistor that includes a magnetized first source, a first drain magnetized in parallel with the magnetization direction of the first source, a first channel layer and a first gate electrode; and an anti-parallel spin transistor that includes a magnetized second source, a second drain magnetized in anti-parallel with the magnetization direction of the second source, a second channel layer and a second gate electrode, wherein the first gate electrode and the second gate electrode are connected to a common input terminal.

    摘要翻译： 提供了一种互补自旋晶体管逻辑电路，包括：并联自旋晶体管，其包括磁化的第一源，与第一源的磁化方向平行磁化的第一漏极，第一沟道层和第一栅电极; 以及反并联自旋晶体管，其包括磁化的第二源极，与所述第二源极的磁化方向反并联的第二漏极，第二沟道层和第二栅电极，其中所述第一栅电极和所述第二栅极 电极连接到公共输入端子。

    RECONFIGURABLE LOGIC DEVICE USING SPIN ACCUMULATION AND DIFFUSION
    7.
    发明申请
    RECONFIGURABLE LOGIC DEVICE USING SPIN ACCUMULATION AND DIFFUSION 有权
    使用旋转累积和扩展的可重构逻辑器件

    公开(公告)号：US20110042648A1

    公开(公告)日：2011-02-24

    申请号：US12684586

    申请日：2010-01-08

    申请人： Hyun Cheol Koo ,  Suk Hee Han ,  Joon Yeon Chang ,  Hyung Jun Kim ,  Jang Hae Ku

    发明人： Hyun Cheol Koo ,  Suk Hee Han ,  Joon Yeon Chang ,  Hyung Jun Kim ,  Jang Hae Ku

    IPC分类号： H01L29/82 ,  H01L29/66

    CPC分类号： H01L29/66984 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H01L29/0665 ,  H01L29/1606 ,  H01L29/7783

    摘要： A logic device includes: a substrate having a channel layer; two input terminal patterns of ferromagnetic material formed on the substrate and spaced apart from each other along a longitudinal direction of the channel layer so as to serve as the input terminals of a logic gate; and an output terminal pattern of ferromagnetic material formed on the substrate and disposed between the two input terminal patterns to serve as an output terminal of the logic gate. The output terminal pattern reads an output voltage by using spin accumulation and diffusion of electron spins which are injected into the channel layer from the input terminal patterns.

    摘要翻译： 逻辑器件包括：具有沟道层的衬底; 铁磁材料的两个输入端子图案形成在基板上并且沿着沟道层的纵向方向彼此间隔开，以便用作逻辑门的输入端; 以及形成在所述基板上并且设置在所述两个输入端子图案之间以用作所述逻辑门的输出端子的铁磁材料的输出端子图案。 输出端子图案通过使用从输入端子图案注入到沟道层中的电子自旋的自旋累积和扩散来读取输出电压。

    Spin transistor using stray magnetic field
    9.
    发明授权
    Spin transistor using stray magnetic field 失效
    旋转晶体管使用杂散磁场

    公开(公告)号：US07608901B2

    公开(公告)日：2009-10-27

    申请号：US11777228

    申请日：2007-07-12

    申请人： Hyun Cheol Koo ,  Jong Hwa Eom ,  Suk Hee Han ,  Joon Yeon Chang ,  Hyung Jun Kim

    发明人： Hyun Cheol Koo ,  Jong Hwa Eom ,  Suk Hee Han ,  Joon Yeon Chang ,  Hyung Jun Kim

    IPC分类号： H01L29/72

    CPC分类号： H01L29/66984 ,  G11C11/16 ,  H01L29/0843 ,  Y10S257/902 ,  Y10S977/933

    摘要： Disclosed herein is a spin transistor including: a semiconductor substrate having a channel layer formed therein; first and second electrodes which are formed to be spaced apart from each other on the substrate at a predetermined distance along a longitudinal direction of the channel layer; a source and drain which include magnetized ferromagnetic materials and are formed to be spaced apart form each other between the first electrode and the second electrode at a predetermined distance along the longitudinal direction of the channel layer; and a gate which is formed on the substrate between the source and the drain, and adjusts spin orientations of electrons passing through the channel layer, wherein the electrons passing through the channel layer are spin-aligned at a lower side of the source by a stray magnetic field of the source and spin-filtered at a lower side of the drain by a stray field of the drain.

    摘要翻译： 本文公开了一种自旋晶体管，包括：其中形成有沟道层的半导体衬底; 第一和第二电极，沿着沟道层的纵向以预定的距离形成在衬底上彼此间隔开; 源极和漏极，其包括磁化铁磁材料，并且沿着沟道层的纵向方向以预定的距离在第一电极和第二电极之间彼此间隔开形成间隔开的源极和漏极; 以及形成在源极和漏极之间的衬底上的栅极，并且调节通过沟道层的电子的自旋取向，其中通过沟道层的电子通过杂散在源的较低侧自旋对准 源极的磁场，并通过漏极的杂散场在漏极的下侧进行自旋滤波。