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    METHOD FOR PRODUCING FERROELECTRIC THIN FILM
    1.
    发明申请
    METHOD FOR PRODUCING FERROELECTRIC THIN FILM 有权
    生产薄膜薄膜的方法

    公开(公告)号：US20120295100A1

    公开(公告)日：2012-11-22

    申请号：US13471845

    申请日：2012-05-15

    申请人： Toshiaki Watanabe ,  Hideaki Sakurai ,  Nobuyuki Soyama ,  Toshihiro Doi

    发明人： Toshiaki Watanabe ,  Hideaki Sakurai ,  Nobuyuki Soyama ,  Toshihiro Doi

    IPC分类号： B32B9/00 ,  B05D5/12

    CPC分类号： H01L41/1876 ,  C30B1/023 ,  C30B29/16 ,  H01L21/02186 ,  H01L21/02194 ,  H01L21/02197 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/28291 ,  H01L28/55 ,  H01L28/56 ,  H01L28/65 ,  H01L28/75 ,  H01L29/516 ,  H01L35/22 ,  H01L35/34 ,  H01L41/0815 ,  H01L41/318 ,  H01L41/319 ,  Y10T428/249921 ,  Y10T428/25 ,  Y10T428/26 ,  Y10T428/265

    摘要： A method for producing a ferroelectric thin film comprising: coating a composition for forming a ferroelectric thin film on a base electrode of a substrate having a substrate body and the base electrode that has crystal daces oriented in the (111) direction, calcining the coated composition, and subsequently performing firing the coated composition to crystallize the coated composition, and thereby forming a ferroelectric thin film on the base electrode, wherein the method includes formation of an orientation controlling layer by coating the composition on the base electrode, calcining the coated composition, and firing the coated composition, where an amount of the composition coated on the base electrode is controlled such that a thickness of the orientation controlling layer after crystallization is in a range of 5 nm to 30 nm, and thereby controlling the preferential crystal orientation of the orientation controlling layer to be in the (110) plane.

    摘要翻译： 一种铁电薄膜的制造方法，其特征在于，在具有基板主体的基板的基极上涂布形成铁电薄膜的组合物，并且在（111）方向上取向晶体取向的基极，对所述涂布组合物进行煅烧 ，然后进行焙烧，使涂布的组合物结晶，使基底电极上形成铁电薄膜，其中，该方法包括通过将该组合物涂布在基极上，煅烧涂布组合物而形成取向控制层， 并且对涂覆组合物进行焙烧，其中涂覆在基极上的组合物的量被控制为使结晶后的取向控制层的厚度在5nm至30nm的范围内，从而控制 取向控制层位于（110）面。

    LIQUID AND METHOD FOR REMOVING CSD COATED FILM, FERROELECTRIC THIN FILM AND METHOD FOR PRODUCING THE SAME
    2.
    发明申请
    LIQUID AND METHOD FOR REMOVING CSD COATED FILM, FERROELECTRIC THIN FILM AND METHOD FOR PRODUCING THE SAME 审中-公开
    用于去除CSD涂膜的液体和方法，微电薄膜及其制造方法

    公开(公告)号：US20120100330A1

    公开(公告)日：2012-04-26

    申请号：US13380288

    申请日：2010-04-21

    申请人： Nobuyuki Soyama ,  Toshiaki Watanabe ,  Hideaki Sakurai

    发明人： Nobuyuki Soyama ,  Toshiaki Watanabe ,  Hideaki Sakurai

    IPC分类号： B32B3/02 ,  B44C1/22 ,  B05D3/10 ,  C09K13/00

    CPC分类号： H01L21/02087 ,  H01L21/02197 ,  H01L21/02282

    摘要： Coated film is removed at an outer peripheral edge of a substrate before heat-treating in CSD method by spraying or dropping liquid for removing CSD coated film including water and organic solvent mixed in a weight ratio of 50:50 to 0:100, in which the organic solvent is one or more selected from the group consisting of β-diketones, β-ketoesters, polyhydric alcohol, carboxylic acids, alkanolamines, α-hydroxy carboxylic acid, α-hydroxy carbonyl derivatives, and hydrazone derivatives.

    摘要翻译： 在CSD法热处理之前，通过喷涂或滴加用于除去包含以重量比为50:50至0:100混合的水和有机溶剂的CSD涂膜的液体，在基板的外周边缘处去除涂覆膜，其中 所述有机溶剂是选自由β-二酮，酮基酯，多元醇，羧酸，链烷醇胺，α-羟基羧酸，α-羟基羰基衍生物和腙衍生物组成的组中的一种或多种。

    Method for producing ferroelectric thin film
    3.
    发明授权
    Method for producing ferroelectric thin film 有权
    铁电薄膜的制造方法

    公开(公告)号：US08956689B2

    公开(公告)日：2015-02-17

    申请号：US13471796

    申请日：2012-05-15

    申请人： Toshiaki Watanabe ,  Hideaki Sakurai ,  Nobuyuki Soyama ,  Toshihiro Doi

    发明人： Toshiaki Watanabe ,  Hideaki Sakurai ,  Nobuyuki Soyama ,  Toshihiro Doi

    IPC分类号： B05D5/12 ,  B32B9/04 ,  H01L49/02 ,  H01L21/02 ,  H01L41/08 ,  H01L41/319 ,  H01L21/28

    CPC分类号： H01L21/02197 ,  B05D3/0254 ,  B05D5/00 ,  H01L21/022 ,  H01L21/02282 ,  H01L21/28291 ,  H01L28/55 ,  H01L28/65 ,  H01L28/75 ,  H01L41/0815 ,  H01L41/319 ,  Y10T428/249921 ,  Y10T428/25 ,  Y10T428/26 ,  Y10T428/265

    摘要： A method for producing a ferroelectric thin film comprising: coating a composition for forming a ferroelectric thin film on a base electrode of a substrate having a substrate body and the base electrode that has crystal faces oriented in the (111) direction, calcining the coated composition, and subsequently performing firing the coated composition to crystallize the coated composition, and thereby forming a ferroelectric thin film on the base electrode, wherein the method includes formation of an orientation controlling layer by coating the composition on the base electrode, calcining the coated composition, and firing the coated composition, where an amount of the composition coated on the base electrode is controlled such that a thickness of the orientation controlling layer after crystallization is in a range of 35 nm to 150 nm, and thereby controlling the preferential crystal orientation of the orientation controlling layer in the (100) plane.

    摘要翻译： 一种铁电薄膜的制造方法，其特征在于，在具有基板主体的基板的基极上涂布形成铁电薄膜的组合物和在（111）方向上取向晶面的基极，煅烧所述涂布组合物 ，然后进行焙烧，使涂布的组合物结晶，使基底电极上形成铁电薄膜，其中，该方法包括通过将该组合物涂布在基极上，煅烧涂布组合物，形成取向控制层， 对涂覆在基极上的组合物的量进行控制，使得结晶后的取向控制层的厚度在35nm〜150nm的范围内，从而控制该涂层组合物的优选结晶取向 （100）平面中的取向控制层。

    Method for manufacturing thin film capacitor and thin film capacitor obtained by the same
    5.
    发明授权
    Method for manufacturing thin film capacitor and thin film capacitor obtained by the same 有权
    制造薄膜电容器和薄膜电容器的方法

    公开(公告)号：US08501560B2

    公开(公告)日：2013-08-06

    申请号：US13067800

    申请日：2011-06-28

    申请人： Hideaki Sakurai ,  Toshiaki Watanabe ,  Nobuyuki Soyama ,  Guillaume Guegan

    发明人： Hideaki Sakurai ,  Toshiaki Watanabe ,  Nobuyuki Soyama ,  Guillaume Guegan

    IPC分类号： H01L21/8242 ,  H01L21/00 ,  H01L21/20

    CPC分类号： H01L28/60 ,  B82Y30/00 ,  C04B35/4682 ,  C04B2235/3213 ,  C04B2235/441 ,  C04B2235/781 ,  C04B2235/785 ,  C04B2235/787 ,  H01G4/01 ,  H01G4/1227 ,  H01G4/33 ,  H01L21/02197 ,  H01L21/02282 ,  H01L28/55 ,  H01L28/65

    摘要： A thin film capacitor is characterized by forming a lower electrode, coating a composition onto the lower electrode without applying an annealing process having a temperature of greater than 300° C., drying at a predetermined temperature within a range from ambient temperature to 500° C., and calcining at a predetermined temperature within a range of 500 to 800° C. and higher than a drying temperature. The process from coating to calcining is performed the process from coating to calcining once or at least twice, or the process from coating to drying is performed at least twice, and then calcining is performed once. The thickness of the dielectric thin film formed after the first calcining is 20 to 600 nm. The ratio of the thickness of the lower electrode and the thickness of the dielectric thin film formed after the initial calcining step (thickness of lower electrode/thickness of the dielectric thin film) is preferably in the range 0.10 to 15.0.

    摘要翻译： 薄膜电容器的特征在于形成下电极，将组合物涂覆在下电极上，而不施加温度大于300℃的退火工艺，在环境温度至500℃的范围内的预定温度下干燥 并在500〜800℃的范围内的预定温度下煅烧并高于干燥温度。 从涂覆到煅烧的过程进行从涂覆到煅烧一次或至少两次的过程，或者从涂覆到干燥的过程进行至少两次，然后进行一次煅烧。 在第一次煅烧后形成的电介质薄膜的厚度为20〜600nm。 初始煅烧步骤后形成的下部电极的厚度与电介质薄膜的厚度之比（下部电极的厚度/电介质薄膜的厚度）优选在0.10〜15.0的范围内。

    METHOD FOR PRODUCING FERROELECTRIC THIN FILM
    9.
    发明申请
    METHOD FOR PRODUCING FERROELECTRIC THIN FILM 有权
    生产薄膜薄膜的方法

    公开(公告)号：US20120295099A1

    公开(公告)日：2012-11-22

    申请号：US13471796

    申请日：2012-05-15

    申请人： Toshiaki Watanabe ,  Hideaki Sakurai ,  Nobuyuki Soyama ,  Toshihiro Doi

    发明人： Toshiaki Watanabe ,  Hideaki Sakurai ,  Nobuyuki Soyama ,  Toshihiro Doi

    IPC分类号： B05D5/12 ,  B32B5/00

    CPC分类号： H01L21/02197 ,  B05D3/0254 ,  B05D5/00 ,  H01L21/022 ,  H01L21/02282 ,  H01L21/28291 ,  H01L28/55 ,  H01L28/65 ,  H01L28/75 ,  H01L41/0815 ,  H01L41/319 ,  Y10T428/249921 ,  Y10T428/25 ,  Y10T428/26 ,  Y10T428/265

    摘要： A method for producing a ferroelectric thin film comprising: coating a composition for forming a ferroelectric thin film on a base electrode of a substrate having a substrate body and the base electrode that has crystal faces oriented in the (111) direction, calcining the coated composition, and subsequently performing firing the coated composition to crystallize the coated composition, and thereby forming a ferroelectric thin film on the base electrode, wherein the method includes formation of a orientation controlling layer b coating the composition on the base electrode, calcining the coated composition, and firing the coated composition, where an amount of the composition coated on the base electrode is controlled such that a thickness of the orientation controlling layer after crystallization is in a range of 35 nm to 150 nm, and thereby controlling the preferential crystal orientation of the orientation controlling layer in the (100) plane.

    摘要翻译： 一种铁电薄膜的制造方法，其特征在于，在具有基板主体的基板的基极上涂布形成铁电薄膜的组合物和在（111）方向上取向晶面的基极，煅烧所述涂布组合物 ，然后进行焙烧，使涂布组合物结晶，使基极上形成强电介质薄膜，其特征在于：在基极上形成涂布组合物的取向控制层b，煅烧涂布组合物， 对涂覆在基极上的组合物的量进行控制，使得结晶后的取向控制层的厚度在35nm〜150nm的范围内，从而控制该涂层组合物的优选结晶取向 （100）平面中的取向控制层。

    Method for manufacturing thin film capacitor and thin film capacitor obtained by the same
    10.
    发明申请
    Method for manufacturing thin film capacitor and thin film capacitor obtained by the same 有权
    制造薄膜电容器和薄膜电容器的方法

    公开(公告)号：US20120001298A1

    公开(公告)日：2012-01-05

    申请号：US13067800

    申请日：2011-06-28

    申请人： Hideaki Sakurai ,  Toshiaki Watanabe ,  Nobuyuki Soyama ,  Guillaume Guegan

    发明人： Hideaki Sakurai ,  Toshiaki Watanabe ,  Nobuyuki Soyama ,  Guillaume Guegan

    IPC分类号： H01L29/92 ,  H01L21/02

    CPC分类号： H01L28/60 ,  B82Y30/00 ,  C04B35/4682 ,  C04B2235/3213 ,  C04B2235/441 ,  C04B2235/781 ,  C04B2235/785 ,  C04B2235/787 ,  H01G4/01 ,  H01G4/1227 ,  H01G4/33 ,  H01L21/02197 ,  H01L21/02282 ,  H01L28/55 ,  H01L28/65

    摘要： A thin film capacitor is characterized by forming a lower electrode, coating a composition onto the lower electrode without applying an annealing process having a temperature of greater than 300° C., drying at a predetermined temperature within a range from ambient temperature to 500° C., and calcining at a predetermined temperature within a range of 500 to 800° C. and higher than a drying temperature. The process from coating to calcining is performed the process from coating to calcining once or at least twice, or the process from coating to drying is performed at least twice, and then calcining is performed once. The thickness of the dielectric thin film formed after the first calcining is 20 to 600 nm. The ratio of the thickness of the lower electrode and the thickness of the dielectric thin film formed after the initial calcining step (thickness of lower electrode/thickness of the dielectric thin film) is preferably in the range 0.10 to 15.0.

    摘要翻译： 薄膜电容器的特征在于形成下电极，在不施加温度大于300℃的退火工艺的情况下将组合物涂覆在下电极上，在从环境温度至500℃的范围内的预定温度下干燥 并在500〜800℃的范围内的预定温度下煅烧并高于干燥温度。 从涂覆到煅烧的过程进行从涂覆到煅烧一次或至少两次的过程，或者从涂覆到干燥的过程进行至少两次，然后进行一次煅烧。 在第一次煅烧后形成的电介质薄膜的厚度为20〜600nm。 初始煅烧步骤后形成的下部电极的厚度与电介质薄膜的厚度之比（下部电极的厚度/电介质薄膜的厚度）优选在0.10〜15.0的范围内。