公开(公告)号：US4351492A

公开(公告)日：1982-09-28

申请号：US90593

申请日：1979-11-02

申请人： Hideki Aoyama ,  Takashi Kishida

发明人： Hideki Aoyama ,  Takashi Kishida

IPC分类号： B65H51/04 ,  B65H51/28 ,  B65H54/88 ,  B65H65/00 ,  D01D7/00 ,  D01D10/04 ,  D01D11/00 ,  B65H54/02

CPC分类号： D01D10/0409 ,  B65H54/88 ,  B65H57/003 ,  B65H65/00 ,  D01D7/00 ,  B65H2701/31

摘要： Polyester yarns spun from spinnerets are delivered to bobbins held on a bobbin holder in a winding apparatus through godet rollers which have mirror finished surfaces and axially grooved surfaces. Upon threading the yarns on the bobbins, the yarns are moved to the axially grooved surface from the mirror finished surfaces by means of a yarn displacing guide disposed upstream of the uppermost godet roller. The change in the tension in the yarn caused by the threading operation of the yarn is transmitted beyond the godet rollers, and entanglement of the yarn around the godet roller does not occur.

摘要翻译： 从喷丝头纺出的聚酯纱线通过具有镜面加工表面和轴向凹槽表面的导丝辊被输送到卷绕装置中的筒管架上的筒管上。 在将纱线穿过线轴时，纱线通过位于最上层导丝辊上游的纱线移位导向器从镜面加工表面移动到轴向沟槽表面。 由纱线的穿线操作引起的纱​​线张力变化超过导丝辊，不会发生纱线缠绕在导丝辊上。

公开(公告)号：US5780900A

公开(公告)日：1998-07-14

申请号：US733164

申请日：1996-10-17

申请人： Yuji Suzuki ,  Hitomichi Takano ,  Masahiko Suzumura ,  Yoshiki Hayasaki ,  Takashi Kishida ,  Yoshifumi Shirai

发明人： Yuji Suzuki ,  Hitomichi Takano ,  Masahiko Suzumura ,  Yoshiki Hayasaki ,  Takashi Kishida ,  Yoshifumi Shirai

IPC分类号： H01L29/06 ,  H01L29/08 ,  H01L29/78 ,  H01L29/786 ,  H01L29/10

CPC分类号： H01L29/7824 ,  H01L29/0873 ,  H01L29/78624 ,  H01L29/0657 ,  H01L29/0878 ,  H01L29/402

摘要： A thin film transistor of SOI (Silicon-On-Insulator) type includes a buried oxide layer formed on a semiconductor substrate, a silicon layer of a first conductive type formed on the buried oxide layer, and an upper oxide layer formed on the silicon layer. The silicon layer has a body region of a second conductive type, source region of the first conductive type, drain region of the first conductive type, and a drift region of the first conductive type. The silicon layer is formed with a first portion of a thickness T1 in which the doping region is formed, and a second portion of a thickness T2 in which the body region is formed to reach the buried oxide layer. When the thicknesses T1 and T2 are determined so as to satisfy the relationships: 0.4 .mu.m

摘要翻译： SOI（绝缘体上硅）型薄膜晶体管包括在半导体衬底上形成的掩埋氧化物层，形成在掩埋氧化物层上的第一导电类型的硅层和形成在硅层上的上部氧化物层 。 硅层具有第二导电类型的主体区域，第一导电类型的源极区域，第一导电类型的漏极区域和第一导电类型的漂移区域。 硅层形成有其中形成有掺杂区域的厚度T1的第一部分和形成有体区以到达掩埋氧化物层的厚度T2的第二部分。 当厚度T1和T2被确定为满足以下关系：0.4μm

公开(公告)号：US06847435B2

公开(公告)日：2005-01-25

申请号：US10601703

申请日：2003-06-24

申请人： Tatsuya Honda ,  Hiroshi Maeda ,  Takashi Kishida ,  Kazunari Yoshimura ,  Kazufumi Oogi ,  Hideshi Hamaguchi ,  Yoshimitsu Nakamura ,  Kuninori Nakamura

发明人： Tatsuya Honda ,  Hiroshi Maeda ,  Takashi Kishida ,  Kazunari Yoshimura ,  Kazufumi Oogi ,  Hideshi Hamaguchi ,  Yoshimitsu Nakamura ,  Kuninori Nakamura

IPC分类号： G01C15/00 ,  G01B11/03 ,  G01C3/06 ,  G01C3/08 ,  G01S7/48 ,  G01S7/481 ,  G01S17/06 ,  G01S17/46 ,  G01S17/87 ,  G01B11/02 ,  G01B11/26

CPC分类号： G01C3/08 ,  G01S7/4808 ,  G01S7/4813 ,  G01S17/08 ,  G01S17/48 ,  G01S17/87

摘要： A laser distance measuring apparatus, for measuring the distance between objects existing in two directions at least as seen from the apparatus by using laser light, comprises two projectors for projecting laser beams along a specified projection axis toward each one of the objects, a photo detector for receiving reflected light of projection from each object, a distance measurement processor for measuring the distance from a reference point of the apparatus to each object on the basis of the reception signal to the projection by the photo detector, and a distance calculation processor for calculating the distance between the objects on the basis of the distance data measured by the distance measurement processor and the angle formed by two projection axes, in which the projection axis by one projector is variable in angle with respect to the other projector. Therefore, the distance between objects can be measured easily and at high precision by one distance measuring operation only.

摘要翻译： 一种激光测距装置，用于测量至少通过使用激光从该装置看到的存在于两个方向上的物体之间的距离，包括两个投射器，用于将激光束沿着指定的投影轴朝向每个物体投射，光电检测器 用于从每个物体接收投射的反射光;距离测量处理器，用于根据由光电检测器投射的接收信号，测量从设备的参考点到每个物体的距离;以及距离计算处理器，用于计算 基于由距离测量处理器测量的距离数据和由两个投影轴形成的角度的物体之间的距离，其中由一个投影仪的投影轴相对于另一投影仪的角度是可变的。 因此，通过一次距离测量操作，可以容易且高精度地测量物体之间的距离。

公开(公告)号：US06580126B1

公开(公告)日：2003-06-17

申请号：US09709582

申请日：2000-11-13

申请人： Masahiko Suzumura ,  Hitomichi Takano ,  Yuji Suzuki ,  Takashi Kishida ,  Yoshiki Hayasaki ,  Yoshifumi Shirai ,  Takeshi Yoshida ,  Yasunori Miyamoto

发明人： Masahiko Suzumura ,  Hitomichi Takano ,  Yuji Suzuki ,  Takashi Kishida ,  Yoshiki Hayasaki ,  Yoshifumi Shirai ,  Takeshi Yoshida ,  Yasunori Miyamoto

IPC分类号： H01L2976

CPC分类号： H01L29/7824 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/06 ,  H01L24/48 ,  H01L24/49 ,  H01L27/088 ,  H01L27/1203 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/0696 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05624 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48237 ,  H01L2224/48257 ,  H01L2224/49 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/00 ,  H01L2224/45099

摘要： A solid state relay composed of a series connected pair of LDMOSFETs has a minimized output capacitance. Each LDMOSFET is configured to have a silicon layer of a first conductive type, a drain region of the first conductive type diffused in the top surface of the silicon layer, a well region of a second conductive type diffused in the silicon layer in a laterally spaced relation from the drain region, and a source region of the first conductive type diffused within the well region to define a channel extending between the source region and a confronting edge of the well region along the top surface of the silicon layer. Each LDMOSFET is of an SOI (Silicon-On-Insulator) structure composed of a silicon substrate placed on a supporting plate, a buried oxide layer on the silicon substrate, and the silicon layer on the buried oxide layer. The well region is diffused over the full depth of the silicon layer to have its bottom in contact with the buried oxide layer, so that the well region forms with the silicon layer a P-N interface only at a small area adjacent the channel. Because of this reduced P-N interface and also because of the buried oxide layer exhibiting a much lower inductive capacitance than the silicon layer, it is possible to greatly reduce a drain-source capacitance for minimizing the output capacitance of the relay in the non-conductive condition.

公开(公告)号：US06373101B1

公开(公告)日：2002-04-16

申请号：US09709528

申请日：2000-11-13

申请人： Masahiko Suzumura ,  Hitomichi Takano ,  Yuji Suzuki ,  Takashi Kishida ,  Yoshiki Hayasaki ,  Yoshifumi Shirai ,  Takeshi Yoshida ,  Yasunori Miyamoto

发明人： Masahiko Suzumura ,  Hitomichi Takano ,  Yuji Suzuki ,  Takashi Kishida ,  Yoshiki Hayasaki ,  Yoshifumi Shirai ,  Takeshi Yoshida ,  Yasunori Miyamoto

IPC分类号： H01L2976

CPC分类号： H01L29/7824 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/06 ,  H01L24/48 ,  H01L24/49 ,  H01L27/088 ,  H01L27/1203 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/0696 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05624 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48237 ,  H01L2224/48257 ,  H01L2224/49 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/00 ,  H01L2224/45099

摘要： A solid state relay composed of a series connected pair of LDMOSFETs has a minimized output capacitance. Each LDMOSFET is configured to have a silicon layer of a first conductive type, a drain region of the first conductive type diffused in the top surface of the silicon layer, a well region of a second conductive type diffused in the silicon layer in a laterally spaced relation from the drain region, and a source region of the first conductive type diffused within the well region to define a channel extending between the source region and a confronting edge of the well region along the top surface of the silicon layer. Each LDMOSFET is of an SOI (Silicon-On-Insulator) structure composed of a silicon substrate placed on a supporting plate, a buried oxide layer on the silicon substrate, and the silicon layer on the buried oxide layer. The well region is diffused over the full depth of the silicon layer to have its bottom in contact with the buried oxide layer, so that the well region forms with the silicon layer a P-N interface only at a small area adjacent the channel. Because of this reduced P-N interface and also because of the buried oxide layer exhibiting a much lower inductive capacitance than the silicon layer, it is possible to greatly reduce a drain-source capacitance for minimizing the output capacitance of the relay in the non-conductive condition.

摘要翻译： 由串联连接的LDMOSFET组成的固态继电器具有最小的输出电容。 每个LDMOSFET被配置为具有第一导电类型的硅层，第一导电类型的漏极区域扩散在硅层的顶表面中，第二导电类型的阱区域在硅层中以横向间隔开地扩散 与漏区域的关系以及在阱区域内扩散的第一导电类型的源极区域，以限定沿着硅层的顶表面在源极区域和阱区域的相对边缘之间延伸的沟道。 每个LDMOSFET是由放置在支撑板上的硅衬底，硅衬底上的掩埋氧化物层和掩埋氧化物层上的硅层组成的SOI（绝缘体上硅）结构。 阱区域在硅层的整个深度上扩散以使其底部与掩埋氧化物层接触，使得阱区域仅在邻近通道的小区域处与硅层形成P-N界面。 由于这种减小的PN接口，并且由于掩埋氧化物层具有比硅层更低的电感性电容，因此可以大大减小漏 - 源电容，以使在非导电条件下继电器的输出电容最小化 。

公开(公告)号：US06211551B1

公开(公告)日：2001-04-03

申请号：US09105464

申请日：1998-06-26

申请人： Masahiko Suzumura ,  Hitomichi Takano ,  Yuji Suzuki ,  Takashi Kishida ,  Yoshiki Hayasaki ,  Yoshifumi Shirai ,  Takeshi Yoshida ,  Yasunori Miyamoto

发明人： Masahiko Suzumura ,  Hitomichi Takano ,  Yuji Suzuki ,  Takashi Kishida ,  Yoshiki Hayasaki ,  Yoshifumi Shirai ,  Takeshi Yoshida ,  Yasunori Miyamoto

IPC分类号： H01L2976

CPC分类号： H01L29/7824 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/06 ,  H01L24/48 ,  H01L24/49 ,  H01L27/088 ,  H01L27/1203 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/0696 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05624 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48237 ,  H01L2224/48257 ,  H01L2224/49 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/00 ,  H01L2224/45099

摘要： A solid state relay composed of a series connected pair of LDMOSFETs has a minimized output capacitance. Each LDMOSFET is configured to have a silicon layer of a first conductive type, a drain region of the first conductive type diffused in the top surface of the silicon layer, a well region of a second conductive type diffused in the silicon layer in a laterally spaced relation from the drain region, and a source region of the first conductive type diffused within the well region to define a channel extending between the source region and a confronting edge of the well region along the top surface of the silicon layer. Each LDMOSFET is of an SOI (Silicon-On-Insulator) structure composed of a silicon substrate placed on a supporting plate, a buried oxide layer on the silicon substrate, and the silicon layer on the buried oxide layer. The well region is diffused over the full depth of the silicon layer to have its bottom in contact with the buried oxide layer, so that the well region forms with the silicon layer a P-N interface only at a small area adjacent the channel. Because of this reduced P-N interface and also because of the buried oxide layer exhibiting a much lower inductive capacitance than the silicon layer, it is possible to greatly reduce a drain-source capacitance for minimizing the output capacitance of the relay in the non-conductive condition.

摘要翻译： 由串联连接的LDMOSFET组成的固态继电器具有最小的输出电容。 每个LDMOSFET被配置为具有第一导电类型的硅层，第一导电类型的漏极区域扩散在硅层的顶表面中，第二导电类型的阱区域在硅层中以横向间隔开地扩散 与漏区域的关系以及在阱区域内扩散的第一导电类型的源极区域，以限定沿着硅层的顶表面在源极区域和阱区域的相对边缘之间延伸的沟道。 每个LDMOSFET是由放置在支撑板上的硅衬底，硅衬底上的掩埋氧化物层和掩埋氧化物层上的硅层组成的SOI（绝缘体上硅）结构。 阱区域在硅层的整个深度上扩散以使其底部与掩埋氧化物层接触，使得阱区域仅在邻近通道的小区域处与硅层形成P-N界面。 由于这种减小的PN接口，并且由于掩埋氧化物层具有比硅层更低的电感性电容，因此可以大大减小漏 - 源电容，以使在非导电条件下继电器的输出电容最小化 。

公开(公告)号：US20140012527A1

公开(公告)日：2014-01-09

申请号：US14005836

申请日：2012-03-19

申请人： Naota Yamamoto ,  Takashi Ito ,  Takashi Kishida ,  Yoriko Kosaka

发明人： Naota Yamamoto ,  Takashi Ito ,  Takashi Kishida ,  Yoriko Kosaka

IPC分类号： G01N33/00

CPC分类号： G01N33/00 ,  F16C33/58 ,  F16C41/008 ,  G05B19/128 ,  G05B19/4183 ,  G05B23/0216 ,  G05B2219/24086 ,  G05B2219/25294 ,  G05B2219/37252 ,  G05B2219/49302 ,  G05B2219/49304 ,  G06Q10/06 ,  G07C3/00 ,  Y02P90/10

摘要： The present invention makes it possible to determine whether a mechanical component can be reused, without consulting a specialist, by: attaching to the mechanical component an IC tag that records identification information that includes at least one among the type, manufacturing time, manufacturing lot, and manufacturing history of the mechanical component, and that enables the identification information to be externally read by an electromagnetic method; recording, in the memory unit of an inspection device that can read the IC tag, inspection items corresponding to the identification information and the evaluation criteria of the inspection items; displaying an inspection item corresponding to the mechanical component on a display unit; obtaining result information from an input unit; and comparing the result information to the evaluation criteria and displaying, on the display unit, whether the part can be reused.

摘要翻译： 本发明使得可以通过以下方式来确定机械部件是否可以重复使用：通过以下方式来附加机械部件：IC标记，其记录包括类型，制造时间，制造批次中的至少一个的识别信息， 和机械部件的制造历史，并且能够通过电磁方式从外部读取识别信息; 在可读取IC标签的检查装置的存储单元中记录与识别信息相对应的检查项目和检查项目的评价标准; 在显示单元上显示与所述机械部件相对应的检查项目; 从输入单元获取结果信息; 以及将所述结果信息与所述评估标准进行比较，并且在所述显示单元上显示所述部分是否可以重复使用。

公开(公告)号：US06448620B2

公开(公告)日：2002-09-10

申请号：US09741812

申请日：2000-12-22

申请人： Yoshiki Hayasaki ,  Hitomichi Takano ,  Masahiko Suzumura ,  Yuji Suzuki ,  Yoshifumi Shirai ,  Takashi Kishida ,  Takeshi Yoshida ,  Takaaki Yoshihara

发明人： Yoshiki Hayasaki ,  Hitomichi Takano ,  Masahiko Suzumura ,  Yuji Suzuki ,  Yoshifumi Shirai ,  Takashi Kishida ,  Takeshi Yoshida ,  Takaaki Yoshihara

IPC分类号： H01L2701

CPC分类号： H01L29/7824 ,  H01L29/0878 ,  H01L29/66681 ,  H01L29/78624

摘要： To provide a semiconductor device having a large allowable current, a demanded withstand voltage, and small output capacitance and resistance, the semiconductor device comprises a semiconductor layer formed on a semiconductor substrate, and the semiconductor layer includes a first conductivity type-drain region, a second conductivity type-well region apart from the drain region, a first conductivity type-source region in the well region apart from one end of the well region on the side of the drain region, a first conductivity type-drift region formed between one end of the well region and the drain region and in contact with the well region and the drain region, respectively, and a gate electrode formed spaced a gate oxide layer and on the well region located between the drift region and the source region; and the impurity concentration of the drift region decreases in the lateral direction and also in the vertical direction, respectively, as the distance from the drain region increases.

摘要翻译： 为了提供具有大容许电流，所要求的耐受电压和小的输出电容和电阻的半导体器件，半导体器件包括形成在半导体衬底上的半导体层，并且半导体层包括第一导电类型 - 漏极区域， 与漏极区分离的第二导电类型 - 阱区，在与漏极区一侧的阱区的一端分开的阱区中的第一导电型 - 源极区，形成在漏极区的一端 和与阱区和漏极区分别接触的阱区和形成在栅极氧化物层之间以及位于漂移区和源极区之间的阱区上的栅极; 随着距离漏极区域的距离增加，漂移区域的杂质浓度分别在横向和垂直方向上减小。

公开(公告)号：US5053201A

公开(公告)日：1991-10-01

申请号：US904180

申请日：1986-09-05

申请人： Shinichi Yamauchi ,  Katsushi Sasaki ,  Eiji Matsumura ,  Yasuhiko Saito ,  Takashi Kishida

发明人： Shinichi Yamauchi ,  Katsushi Sasaki ,  Eiji Matsumura ,  Yasuhiko Saito ,  Takashi Kishida

IPC分类号： B01F7/00 ,  B01F7/30 ,  B01J19/18 ,  C08F2/00 ,  C08G63/78

CPC分类号： B01J19/18 ,  B01F7/30 ,  C08G63/78 ,  C08G63/785 ,  B01F7/00416 ,  B01F7/00991 ,  B01J2219/00094 ,  B01J2219/00168 ,  B01J2219/185

摘要： A process and apparatus for the preparation of a polyester, wherein a thin film polymerization apparatus having at least one columnar or cylindrical roller-shaped stirring vane rotating along and in close proximity to a substantially cylindrical vertical tank wall is used, and the stirring vane is caused to make an epicyclic movement along the tank wall in the circumferential direction thereof so that the direction of rotation is the same as the direction of revolution and a polyester-forming monomer and/or an oligomer thereof is dropped on the surface of the tank wall in the form of a thin film.

摘要翻译： 一种用于制备聚酯的方法和设备，其中使用具有至少一个沿大致圆柱形的垂直罐壁旋转并且紧邻基本上圆柱形的垂直罐壁的柱形或圆柱形辊状搅拌叶片的薄膜聚合装置，并且搅拌叶片 导致沿罐壁周向的周向运动，使得旋转方向与旋转方向相同，并且聚酯形成单体和/或其低聚物滴落在罐壁的表面上 以薄膜的形式。

公开(公告)号：US3971517A

公开(公告)日：1976-07-27

申请号：US496514

申请日：1974-08-12

申请人： Yosio Matuura ,  Shoichi Murakami ,  Norihisa Yamaguchi ,  Takashi Kishida ,  Sadao Kadokura ,  Kiyoshi Imai

发明人： Yosio Matuura ,  Shoichi Murakami ,  Norihisa Yamaguchi ,  Takashi Kishida ,  Sadao Kadokura ,  Kiyoshi Imai

IPC分类号： B65H54/04 ,  B65H59/38 ,  B65H67/04 ,  B65H54/02 ,  B65H54/32

CPC分类号： B65H54/04 ,  B65H59/38 ,  B65H59/384 ,  B65H67/04 ,  B65H2701/31

摘要： A guide roller is traversed substantially in parallel to the axis of an uprightly supported bobbin at a speed slow enough not to form appreciable twilled angles of a wound yarn. The yarn continuously extruded from a spinning apparatus at a speed higher than 2000 m/min is introduced substantially in parallel to the axis of the bobbin and changes its direction to right angles with respect to the axis of the bobbin while travelling through the guide roller. The guide roller traverses with shorter traverse strokes as the diameter of the wound yarn becomes larger.

摘要翻译： 引导辊以足够慢的速度基本上平行于垂直支撑的筒管的轴线移动，不能形成卷绕的纱线的明显的斜角。 以高于2000m / min的速度从纺丝设备连续挤出的纱线基本上平行于筒管的轴线引入，并且在通过导辊行进时相对于筒管的轴线改变成直角。 当卷绕的纱线的直径变大时，导辊以较短的横动程移动。