公开(公告)号：US6130496A

公开(公告)日：2000-10-10

申请号：US355245

申请日：1999-07-27

申请人： Hideki Takigawa ,  Wataru Bitou ,  Makoto Tsukiji ,  Hiroki Shiota ,  Shiro Takada ,  Nobuo Urakawa

发明人： Hideki Takigawa ,  Wataru Bitou ,  Makoto Tsukiji ,  Hiroki Shiota ,  Shiro Takada ,  Nobuo Urakawa

IPC分类号： H02K3/34 ,  H02K3/40

CPC分类号： H02K3/345 ,  H02K3/40

摘要： A stator coil for a rotating electrical machine having a ground wall insulation of a stator coil impregnated with a resin, maintaining a releasing characteristic between the ground wall insulation and a slot of a stator core, preventing surface corona and exhibiting excellent characteristics for a long time. The stator coil of the rotating electrical machine has a conductor covered with an insulating layer and a surface-corona preventive layer, the stator coil being accommodated in the slot of a stator core and, together with the stator core, impregnated with a thermosetting resin so that the stator coil is integrated with the stator core. The surface-corona preventive layer has a wound semiconductive tape and a composite tape including a fluorine-containing non-bonding material layer on a second semiconductive tape. The slot of a stator core and the insulating layer contact the semiconductive tapes and the non-bonding material is disposed between the semiconductive tapes, forming a gap in a widthwise direction of the non-bonding material layer.

摘要翻译： PCT No.PCT / JP97 / 04668 Sec。 371日期：1999年7月27日 102（e）1999年7月27日PCT 1997年12月18日PCT公布。 公开号WO99 /​​ 31782 日期1999年6月24日用于旋转电机的定子线圈，其具有浸渍有树脂的定子线圈的接地壁绝缘体，保持接地壁绝缘体与定子芯体的槽之间的释放特性，防止表面电晕并表现出优异 特点长期以来。 旋转电机的定子线圈具有覆盖有绝缘层和表面电晕防护层的导体，定子线圈容纳在定子芯的槽中，并与定子芯一起浸渍有热固性树脂，因此 定子线圈与定子芯集成。 表面电晕防护层具有卷绕的半导体带和在第二半导体带上包括含氟非接合材料层的复合带。 定子芯的槽和绝缘层接触半导体带和非接合材料设置在半导体带之间，在非接合材料层的宽度方向上形成间隙。

公开(公告)号：US08193633B2

公开(公告)日：2012-06-05

申请号：US12675549

申请日：2008-09-12

申请人： Kenji Mimura ,  Hideki Takigawa ,  Hiroki Shiota ,  Kazuhiro Tada ,  Takashi Nishimura ,  Hiromi Ito ,  Seiki Hiramatsu ,  Atsuko Fujino ,  Kei Yamamoto ,  Motoki Masaki

发明人： Kenji Mimura ,  Hideki Takigawa ,  Hiroki Shiota ,  Kazuhiro Tada ,  Takashi Nishimura ,  Hiromi Ito ,  Seiki Hiramatsu ,  Atsuko Fujino ,  Kei Yamamoto ,  Motoki Masaki

IPC分类号： H01L23/34 ,  H01L23/10

CPC分类号： H01L23/3737 ,  F28F2013/006 ,  H01L23/4334 ,  H01L23/49568 ,  H01L23/49575 ,  H01L24/29 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/2929 ,  H01L2224/29386 ,  H01L2224/29499 ,  H01L2224/32245 ,  H01L2224/451 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2924/01019 ,  H01L2924/181 ,  Y10T29/4935 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： Provided is a heat conductive sheet obtained by dispersing an inorganic filler in a thermosetting resin, in which the inorganic filler contains secondary aggregation particles formed by isotropically aggregating scaly boron nitride primary particles having an average length of 15 μm or less, and the inorganic filler contains more than 20 vol % of the secondary aggregation particles each having a particle diameter of 50 μm or more. The heat conductive sheet is advantageous in terms of productivity and cost and excellent in heat conductivity and electrical insulating properties.

摘要翻译： 提供了一种通过将无机填料分散在热固性树脂中而获得的导热片，其中无机填料含有通过各向同性地聚集平均长度为15μm以下的鳞片状氮化硼一次粒子形成的二次凝集粒子，无机填料含有 大于20体积％的二次聚集粒子各自具有50μm以上的粒径。 导热片在生产率和成本方面是有利的，并且导热性和电绝缘性能优异。

公开(公告)号：US20100226095A1

公开(公告)日：2010-09-09

申请号：US12675549

申请日：2008-09-12

申请人： Kenji Mimura ,  Hideki Takigawa ,  Hiroki Shiota ,  Kazuhiro Tada ,  Takashi Nishimura ,  Hiromi Ito ,  Seiki Hiramatsu ,  Atsuko Fujino ,  Kei Yamamoto ,  Motoki Masaki

发明人： Kenji Mimura ,  Hideki Takigawa ,  Hiroki Shiota ,  Kazuhiro Tada ,  Takashi Nishimura ,  Hiromi Ito ,  Seiki Hiramatsu ,  Atsuko Fujino ,  Kei Yamamoto ,  Motoki Masaki

IPC分类号： H05K7/20 ,  F28F7/00 ,  B21D53/02

CPC分类号： H01L23/3737 ,  F28F2013/006 ,  H01L23/4334 ,  H01L23/49568 ,  H01L23/49575 ,  H01L24/29 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/2929 ,  H01L2224/29386 ,  H01L2224/29499 ,  H01L2224/32245 ,  H01L2224/451 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2924/01019 ,  H01L2924/181 ,  Y10T29/4935 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： Provided is a heat conductive sheet obtained by dispersing an inorganic filler in a thermosetting resin, in which the inorganic filler contains secondary aggregation particles formed by isotropically aggregating scaly boron nitride primary particles having an average length of 15 μm or less, and the inorganic filler contains more than 20 vol % of the secondary aggregation particles each having a particle diameter of 50 μm or more. The heat conductive sheet is advantageous in terms of productivity and cost and excellent in heat conductivity and electrical insulating properties.

摘要翻译： 提供了一种通过将无机填料分散在热固性树脂中而获得的导热片，其中无机填料含有通过各向同性地聚集平均长度为15μm以下的鳞片状氮化硼一次粒子形成的二次凝集粒子，无机填料含有 大于20体积％的二次聚集粒子各自具有50μm以上的粒径。 导热片在生产率和成本方面是有利的，并且导热性和电绝缘性能优异。

公开(公告)号：US08236666B2

公开(公告)日：2012-08-07

申请号：US12664751

申请日：2007-12-05

申请人： Seiki Hiramatsu ,  Kei Yamamoto ,  Atsuko Fujino ,  Takashi Nishimura ,  Kenji Mimura ,  Hideki Takigawa ,  Hiroki Shiota ,  Nobutake Taniguchi ,  Hiroshi Yoshida

发明人： Seiki Hiramatsu ,  Kei Yamamoto ,  Atsuko Fujino ,  Takashi Nishimura ,  Kenji Mimura ,  Hideki Takigawa ,  Hiroki Shiota ,  Nobutake Taniguchi ,  Hiroshi Yoshida

IPC分类号： H01L21/00 ,  H01L21/46 ,  H01L21/30

CPC分类号： H01L23/3737 ,  H01L23/16 ,  H01L23/3121 ,  H01L23/3735 ,  H01L23/5386 ,  H01L23/562 ,  H01L2224/48091 ,  H01L2924/09701 ,  H01L2924/19107 ,  H05K1/056 ,  H05K3/041 ,  H05K3/202 ,  H05K3/44 ,  H05K2201/0209 ,  H05K2201/09745 ,  H05K2201/09881 ,  H01L2924/00014

摘要： Provided is a semiconductor device including: a base plate; a thermally conductive resin layer formed on an upper surface of the base plate; an integrated layer which is formed on an upper surface of the thermally conductive resin layer, and includes an electrode and an insulating resin layer covering all side surfaces of the electrode; and a semiconductor element formed on an upper surface of the electrode, in which the integrated layer is thermocompression bonded to the base plate through the thermally conductive resin layer. This semiconductor device excels in insulating properties and reliability.

摘要翻译： 提供一种半导体器件，包括：基板; 形成在所述基板的上表面上的导热树脂层; 形成在导热性树脂层的上表面的整体层，具有覆盖电极的所有侧面的电极和绝缘性树脂层; 以及形成在所述电极的上表面上的半导体元件，其中所述一体层通过所述导热树脂层热压接合到所述基板。 该半导体器件的绝缘性和可靠性优异。

公开(公告)号：US20100201002A1

公开(公告)日：2010-08-12

申请号：US12664751

申请日：2007-12-05

申请人： Seiki Hiramatsu ,  Kei Yamamoto ,  Atsuko Fujino ,  Takashi Nishimura ,  Kenji Mimura ,  Hideki Takigawa ,  Hiroki Shiota ,  Nobutake Taniguchi ,  Hiroshi Yoshida

发明人： Seiki Hiramatsu ,  Kei Yamamoto ,  Atsuko Fujino ,  Takashi Nishimura ,  Kenji Mimura ,  Hideki Takigawa ,  Hiroki Shiota ,  Nobutake Taniguchi ,  Hiroshi Yoshida

IPC分类号： H01L23/36 ,  H01L21/58 ,  H01L23/31

CPC分类号： H01L23/3737 ,  H01L23/16 ,  H01L23/3121 ,  H01L23/3735 ,  H01L23/5386 ,  H01L23/562 ,  H01L2224/48091 ,  H01L2924/09701 ,  H01L2924/19107 ,  H05K1/056 ,  H05K3/041 ,  H05K3/202 ,  H05K3/44 ,  H05K2201/0209 ,  H05K2201/09745 ,  H05K2201/09881 ,  H01L2924/00014

摘要： Provided is a semiconductor device including: a base plate; a thermally conductive resin layer formed on an upper surface of the base plate; an integrated layer which is formed on an upper surface of the thermally conductive resin layer, and includes an electrode and an insulating resin layer covering all side surfaces of the electrode; and a semiconductor element formed on an upper surface of the electrode, in which the integrated layer is thermocompression bonded to the base plate through the thermally conductive resin layer. This semiconductor device excels in insulating properties and reliability.

摘要翻译： 提供一种半导体器件，包括：基板; 形成在所述基板的上表面上的导热树脂层; 形成在导热性树脂层的上表面的整体层，具有覆盖电极的所有侧面的电极和绝缘性树脂层; 以及形成在所述电极的上表面上的半导体元件，其中所述一体层通过所述导热树脂层热压接合到所述基板。 该半导体器件的绝缘性和可靠性优异。

公开(公告)号：US20130240912A1

公开(公告)日：2013-09-19

申请号：US13988535

申请日：2011-12-05

申请人： Hiroki Shiota ,  Seiji Oka ,  Yoshihiro Yamaguchi

发明人： Hiroki Shiota ,  Seiji Oka ,  Yoshihiro Yamaguchi

IPC分类号： H01L23/495 ,  H01L29/16

CPC分类号： H01L23/49568 ,  H01L23/3121 ,  H01L23/36 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L25/0655 ,  H01L25/072 ,  H01L29/1602 ,  H01L29/1608 ,  H01L2224/32013 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/10253 ,  H01L2924/10272 ,  H01L2924/1033 ,  H01L2924/1203 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/14 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device including: a semiconductor element; a lead frame connected to the semiconductor element; a metal base plate mounted on the lead frame via a first insulation layer; and a second insulation layer disposed on the opposite side of the metal base plate face on which the first insulation layer is disposed; wherein the first insulation layer is an insulation layer whose heat-dissipation performance is higher than that of the second insulation layer, and the second insulation layer is an insulation layer whose insulation performance is the same as that of the first insulation layer or higher than that of the first insulation layer.

摘要翻译： 一种半导体器件，包括：半导体元件; 连接到所述半导体元件的引线框架; 通过第一绝缘层安装在引线框架上的金属基板; 以及第二绝缘层，其设置在设置有所述第一绝缘层的所述金属基板面的相对侧上; 其特征在于，所述第一绝缘层是绝热层，其绝热性能比所述第二绝缘层高，绝缘性能与所述第一绝缘层的绝缘性能相同， 的第一绝缘层。

公开(公告)号：US20070284719A1

公开(公告)日：2007-12-13

申请号：US11742057

申请日：2007-04-30

申请人： Hiroki Shiota ,  Hirotaka Muto ,  Tetsuo Mizoshiri

发明人： Hiroki Shiota ,  Hirotaka Muto ,  Tetsuo Mizoshiri

IPC分类号： H01L23/08

CPC分类号： H01L23/585 ,  H01L23/24 ,  H01L23/60 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L25/072 ,  H01L29/0619 ,  H01L2224/29101 ,  H01L2224/32225 ,  H01L2224/43825 ,  H01L2224/451 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45155 ,  H01L2224/45169 ,  H01L2224/4556 ,  H01L2224/45565 ,  H01L2224/45572 ,  H01L2224/45644 ,  H01L2224/45655 ,  H01L2224/45669 ,  H01L2224/4569 ,  H01L2224/45691 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/4847 ,  H01L2224/48699 ,  H01L2224/4899 ,  H01L2224/49176 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01028 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/10272 ,  H01L2924/1203 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/14 ,  H01L2924/1532 ,  H01L2924/19107 ,  H01L2924/00 ,  H01L2224/43 ,  H01L2224/05599 ,  H01L2924/01006

摘要： A semiconductor device includes an insulator substrate mounted on a base plate, the insulator substrate having an upper electrode, semiconductor chips mounted on the insulator substrate, external terminals for establishing external electrical connections of the semiconductor device, wires for establishing electrical connections among the external terminals, the upper electrode and the semiconductor chips, a case accommodating the insulator substrate, the semiconductor chips, the external terminals and the wires which are sealed by a sealing material filled in the case, a lid for protecting an upper part of the sealing material, and an insulative low electrification covering fitted on each wire, the low electrification covering having a lesser tendency to produce an electric charge buildup than the sealing material.

摘要翻译： 半导体器件包括安装在基板上的绝缘体基板，具有上电极的绝缘体基板，安装在绝缘体基板上的半导体芯片，用于建立半导体器件的外部电连接的外部端子，用于在外部端子之间建立电连接的导线 上部电极和半导体芯片，容纳绝缘体基板的壳体，半导体芯片，外部端子和由填充在壳体中的密封材料密封的电线，用于保护密封材料的上部的盖， 以及安装在每根电线上的绝缘低电气覆盖层，低电气覆盖层产生比密封材料产生电荷积累的倾向较小。

公开(公告)号：US07868436B2

公开(公告)日：2011-01-11

申请号：US11742057

申请日：2007-04-30

申请人： Hiroki Shiota ,  Hirotaka Muto ,  Tetsuo Mizoshiri

发明人： Hiroki Shiota ,  Hirotaka Muto ,  Tetsuo Mizoshiri

IPC分类号： H01L23/02

CPC分类号： H01L23/585 ,  H01L23/24 ,  H01L23/60 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L25/072 ,  H01L29/0619 ,  H01L2224/29101 ,  H01L2224/32225 ,  H01L2224/43825 ,  H01L2224/451 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45155 ,  H01L2224/45169 ,  H01L2224/4556 ,  H01L2224/45565 ,  H01L2224/45572 ,  H01L2224/45644 ,  H01L2224/45655 ,  H01L2224/45669 ,  H01L2224/4569 ,  H01L2224/45691 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/4847 ,  H01L2224/48699 ,  H01L2224/4899 ,  H01L2224/49176 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01028 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/10272 ,  H01L2924/1203 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/14 ,  H01L2924/1532 ,  H01L2924/19107 ,  H01L2924/00 ,  H01L2224/43 ,  H01L2224/05599 ,  H01L2924/01006

摘要： A semiconductor device includes an insulator substrate mounted on a base plate, the insulator substrate having an upper electrode, semiconductor chips mounted on the insulator substrate, external terminals for establishing external electrical connections of the semiconductor device, wires for establishing electrical connections among the external terminals, the upper electrode and the semiconductor chips, a case accommodating the insulator substrate, the semiconductor chips, the external terminals and the wires which are sealed by a sealing material filled in the case, a lid for protecting an upper part of the sealing material, and an insulative low electrification covering fitted on each wire, the low electrification covering having a lesser tendency to produce an electric charge buildup than the sealing material.

摘要翻译： 半导体器件包括安装在基板上的绝缘体基板，具有上电极的绝缘体基板，安装在绝缘体基板上的半导体芯片，用于建立半导体器件的外部电连接的外部端子，用于在外部端子之间建立电连接的导线 上部电极和半导体芯片，容纳绝缘体基板的壳体，半导体芯片，外部端子和由填充在壳体中的密封材料密封的电线，用于保护密封材料的上部的盖， 以及安装在每根电线上的绝缘低电气覆盖层，低电气覆盖层产生比密封材料产生电荷积累的倾向较小。

公开(公告)号：US09287201B2

公开(公告)日：2016-03-15

申请号：US13988535

申请日：2011-12-05

申请人： Hiroki Shiota ,  Seiji Oka ,  Yoshihiro Yamaguchi

发明人： Hiroki Shiota ,  Seiji Oka ,  Yoshihiro Yamaguchi

IPC分类号： H01L23/495 ,  H01L23/36 ,  H01L29/16 ,  H01L23/00 ,  H01L25/065 ,  H01L25/07 ,  H01L23/31

CPC分类号： H01L23/49568 ,  H01L23/3121 ,  H01L23/36 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L25/0655 ,  H01L25/072 ,  H01L29/1602 ,  H01L29/1608 ,  H01L2224/32013 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/10253 ,  H01L2924/10272 ,  H01L2924/1033 ,  H01L2924/1203 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/14 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device including: a semiconductor element; a lead frame connected to the semiconductor element; a metal base plate mounted on the lead frame via a first insulation layer; and a second insulation layer disposed on the opposite side of the metal base plate face on which the first insulation layer is disposed; wherein the first insulation layer is an insulation layer whose heat-dissipation performance is higher than that of the second insulation layer, and the second insulation layer is an insulation layer whose insulation performance is the same as that of the first insulation layer or higher than that of the first insulation layer.

摘要翻译： 一种半导体器件，包括：半导体元件; 连接到所述半导体元件的引线框架; 通过第一绝缘层安装在引线框架上的金属基板; 以及第二绝缘层，其设置在设置有所述第一绝缘层的所述金属基板面的相对侧上; 其特征在于，所述第一绝缘层是绝热层，其绝热性能比所述第二绝缘层高，绝缘性能与所述第一绝缘层的绝缘性能相同， 的第一绝缘层。