公开(公告)号：US08669129B2

公开(公告)日：2014-03-11

申请号：US12996329

申请日：2009-06-03

申请人： Hisayuki Miki ,  Yasunori Yokoyama ,  Takehiko Okabe ,  Kenzo Hanawa

发明人： Hisayuki Miki ,  Yasunori Yokoyama ,  Takehiko Okabe ,  Kenzo Hanawa

IPC分类号： H01L21/00 ,  H01L33/00

CPC分类号： H01L21/02458 ,  C23C14/022 ,  C23C14/0617 ,  C30B25/183 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02658 ,  H01L33/007 ,  H01L33/12 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2924/181 ,  H01S5/32341 ,  H01S2301/173 ,  H01S2304/04 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/00

摘要： One object of the present invention is to provide a method for producing a group III nitride semiconductor light-emitting device which has excellent productivity and produce a group III nitride semiconductor light-emitting device and a lamp, a method for producing a group III nitride semiconductor light-emitting device, in which a buffer layer (12) made of a group III nitride is laminated on a substrate (11), an n-type semiconductor layer (14) comprising a base layer (14a), a light-emitting layer (15), and a p-type semiconductor layer (16) are laminated on the buffer layer (12) in this order, comprising: a pretreatment step in which the substrate (11) is treated with plasma; a buffer layer formation step in which the buffer layer (12) having a composition represented by AlxGa1-xN (0≦x

摘要翻译： 本发明的一个目的是提供一种具有优异的生产率并生产III族氮化物半导体发光器件和灯的III族氮化物半导体发光器件的制造方法，用于制造III族氮化物半导体的方法 在基板（11）上层压由III族氮化物构成的缓冲层（12）的发光装置，包括基底层（14a）的发光层 （15）和p型半导体层（16）依次层压在缓冲层（12）上，包括：预处理步骤，其中基板（11）用等离子体处理; 缓冲层形成步骤，其中具有由Al x Ga 1-x N（0 @ x <1）表示的组成的缓冲层（12）通过用等离子体激活形成在预处理衬底（11）上并使至少一种金属镓原料 和含有V族元素的气体; 以及基底层形成步骤，其中在缓冲层（12）上形成基底层（14a）。

公开(公告)号：US08445302B2

公开(公告)日：2013-05-21

申请号：US12996329

申请日：2009-06-03

申请人： Hisayuki Miki ,  Yasunori Yokoyama ,  Takehiko Okabe ,  Kenzo Hanawa

发明人： Hisayuki Miki ,  Yasunori Yokoyama ,  Takehiko Okabe ,  Kenzo Hanawa

IPC分类号： H01L21/00 ,  H01L33/00

摘要： One object of the present invention is to provide a method for producing a group III nitride semiconductor light-emitting device which has excellent productivity and produce a group III nitride semiconductor light-emitting device and a lamp, a method for producing a group III nitride semiconductor light-emitting device, in which a buffer layer (12) made of a group III nitride is laminated on a substrate (11), an n-type semiconductor layer (14) comprising a base layer (14a), a light-emitting layer (15), and a p-type semiconductor layer (16) are laminated on the buffer layer (12) in this order, comprising: a pretreatment step in which the substrate (11) is treated with plasma; a buffer layer formation step in which the buffer layer (12) having a composition represented by AlxGa1-xN (0≦x

公开(公告)号：US08012784B2

公开(公告)日：2011-09-06

申请号：US12464522

申请日：2009-05-12

申请人： Hisayuki Miki ,  Yasunori Yokoyama ,  Takehiko Okabe ,  Kenzo Hanawa

发明人： Hisayuki Miki ,  Yasunori Yokoyama ,  Takehiko Okabe ,  Kenzo Hanawa

IPC分类号： H01L21/00

CPC分类号： H01L21/02631 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/02538 ,  H01L21/0254 ,  H01L21/02658 ,  H01L33/007 ,  H01L33/12 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/4823 ,  H01L2224/73265 ,  H01L2924/01004 ,  H01L2924/01012 ,  H01L2924/0102 ,  H01L2924/01025 ,  H01L2924/01057 ,  H01L2924/01079 ,  H01L2924/1305 ,  H01L2924/00 ,  H01L2924/00014

摘要： Provided is a method for producing a group III nitride semiconductor light emitting device capable of producing a group III nitride semiconductor light emitting device with excellent light emitting properties with excellent productivity; a group III nitride semiconductor light emitting device; and a lamp.Provided is a method in which a buffer layer 12 composed of a group III nitride compound is laminated on a substrate 11 and then an n-type semiconductor layer 14 provided with an underlying layer 14a, a light emitting layer 15, and an p-type semiconductor layer 16 are sequentially laminated on the buffer layer 12, and is a method in which the buffer layer 12 is formed so as to have a composition of AlXGa1-XN (0≦X

摘要翻译： 本发明提供能够制造发光性优异且生产率优异的III族氮化物半导体发光元件的III族氮化物半导体发光元件的制造方法。 III族氮化物半导体发光器件; 和一盏灯。 提供了一种方法，其中将由III族氮化物化合物构成的缓冲层12层压在基板11上，然后层叠设置有下层14a，发光层15和p型的n型半导体层14 半导体层16依次层叠在缓冲层12上，并且是通过用等离子体激活而形成缓冲层12以具有AlXGa1-XN（0＆amp; NlE; X <1）的组成的方法，从而使 至少金属Ga源和含有V族元素的气体，并且在缓冲层12上形成下层14。

公开(公告)号：US20090283795A1

公开(公告)日：2009-11-19

申请号：US12464522

申请日：2009-05-12

申请人： Hisayuki MIKI ,  Yasunori Yokoyama ,  Takehiko Okabe ,  Kenzo Hanawa

发明人： Hisayuki MIKI ,  Yasunori Yokoyama ,  Takehiko Okabe ,  Kenzo Hanawa

IPC分类号： H01L33/00 ,  H01L21/20

CPC分类号： H01L21/02631 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/02538 ,  H01L21/0254 ,  H01L21/02658 ,  H01L33/007 ,  H01L33/12 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/4823 ,  H01L2224/73265 ,  H01L2924/01004 ,  H01L2924/01012 ,  H01L2924/0102 ,  H01L2924/01025 ,  H01L2924/01057 ,  H01L2924/01079 ,  H01L2924/1305 ,  H01L2924/00 ,  H01L2924/00014

摘要： Provided is a method for producing a group III nitride semiconductor light emitting device capable of producing a group III nitride semiconductor light emitting device with excellent light emitting properties with excellent productivity; a group III nitride semiconductor light emitting device; and a lamp.Provided is a method in which a buffer layer 12 composed of a group III nitride compound is laminated on a substrate 11 and then an n-type semiconductor layer 14 provided with an underlying layer 14a, a light emitting layer 15, and an p-type semiconductor layer 16 are sequentially laminated on the buffer layer 12, and is a method in which the buffer layer 12 is formed so as to have a composition of AlXGa1-XN (0≦X

摘要翻译： 本发明提供能够制造发光性优异且生产率优异的III族氮化物半导体发光元件的III族氮化物半导体发光元件的制造方法。 III族氮化物半导体发光器件; 和一盏灯。 提供了一种方法，其中将由III族氮化物化合物构成的缓冲层12层压在基板11上，然后层叠设置有下层14a，发光层15和p型的n型半导体层14 半导体层16依次层叠在缓冲层12上，并且是通过用等离子体激活而形成缓冲层12以具有AlXGa1-XN（0 <= X <1）的组成的方法，从而 至少使金属Ga源和含有V族元素的气体反应，并且在缓冲层12上形成下层14。

公开(公告)号：US20110084307A1

公开(公告)日：2011-04-14

申请号：US12996329

申请日：2009-06-03

申请人： Hisayuki Miki ,  Yasunori Yokoyama ,  Takehiko Okabe ,  Kenzo Hanawa

发明人： Hisayuki Miki ,  Yasunori Yokoyama ,  Takehiko Okabe ,  Kenzo Hanawa

IPC分类号： H01L33/40 ,  H01L33/32

CPC分类号： H01L21/02458 ,  C23C14/022 ,  C23C14/0617 ,  C30B25/183 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02658 ,  H01L33/007 ,  H01L33/12 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2924/181 ,  H01S5/32341 ,  H01S2301/173 ,  H01S2304/04 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/00

摘要： One object of the present invention is to provide a method for producing a group III nitride semiconductor light-emitting device which has excellent productivity and produce a group III nitride semiconductor light-emitting device and a lamp, a method for producing a group III nitride semiconductor light-emitting device, in which a buffer layer (12) made of a group III nitride is laminated on a substrate (11), an n-type semiconductor layer (14) comprising a base layer (14a), a light-emitting layer (15), and a p-type semiconductor layer (16) are laminated on the buffer layer (12) in this order, comprising: a pretreatment step in which the substrate (11) is treated with plasma; a buffer layer formation step in which the buffer layer (12) having a composition represented by AlxGa1-xN (0≦x

摘要翻译： 本发明的一个目的是提供一种具有优异的生产率并生产III族氮化物半导体发光器件和灯的III族氮化物半导体发光器件的制造方法，用于制造III族氮化物半导体的方法 在基板（11）上层叠由III族氮化物构成的缓冲层（12）的n型半导体层（14）的发光装置，其特征在于，包括：基底层（14a），发光层 （15）和p型半导体层（16）依次层压在缓冲层（12）上，包括：预处理步骤，其中基板（11）用等离子体处理; 缓冲层形成步骤，其中具有由Al x Ga 1-x N（0＆nlE; x <1）表示的组成的缓冲层（12）通过用等离子体激活形成在预处理衬底（11）上并使至少一种金属镓原料 和含有V族元素的气体; 以及基底层形成步骤，其中在缓冲层（12）上形成基底层（14a）。

公开(公告)号：US20080121924A1

公开(公告)日：2008-05-29

申请号：US11943542

申请日：2007-11-20

申请人： Hisayuki Miki ,  Kenzo Hanawa ,  Yasumasa Sasaki ,  Yasunori Yokoyama

发明人： Hisayuki Miki ,  Kenzo Hanawa ,  Yasumasa Sasaki ,  Yasunori Yokoyama

IPC分类号： H01L33/00 ,  C23C14/34

CPC分类号： C23C14/3464 ,  C23C14/0617 ,  C30B25/06 ,  C30B29/406 ,  H01L33/0095 ,  H01L33/325 ,  H01L2224/32257 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/00

摘要： A Group III nitride compound semiconductor light-emitting device manufacturing apparatus with a simple structure, which it is capable of easily optimizing the density of a dopant element in the crystals of a Group III nitride compound semiconductor and forming layers with high efficiency using a sputtering method. The manufacturing apparatus includes: a chamber; a Ga target containing a Ga element and a dopant target containing a dopant element, the Ga target and the dopant target being placed within the chamber; and a power application unit that applies power to the Ga target and the dopant target simultaneously or alternately.

摘要翻译： 具有简单结构的III族氮化物化合物半导体发光器件制造装置，其能够容易地优化III族氮化物半导体的晶体中的掺杂元素的密度，并且使用溅射法高效地形成层 。 制造装置包括：腔室; 包含Ga元素的Ga靶和包含掺杂元素的掺杂物靶，Ga靶和掺杂物靶放置在所述腔内; 以及同时或交替地向Ga靶和掺杂物靶施加电力的功率施加单元。

公开(公告)号：US08148712B2

公开(公告)日：2012-04-03

申请号：US12300306

申请日：2007-05-08

申请人： Hisayuki Miki ,  Hiromitsu Sakai ,  Kenzo Hanawa ,  Yasunori Yokoyama ,  Yasumasa Sasaki ,  Hiroaki Kaji

发明人： Hisayuki Miki ,  Hiromitsu Sakai ,  Kenzo Hanawa ,  Yasunori Yokoyama ,  Yasumasa Sasaki ,  Hiroaki Kaji

IPC分类号： H01L29/06

CPC分类号： C23C16/303 ,  C23C16/0272 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/02403 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/02595 ,  H01L21/0262 ,  H01L21/02631 ,  H01L33/007 ,  H01L33/16 ,  H01L33/32 ,  H01L2924/0002 ,  H01L2924/00

摘要： An object of the present invention is to obtain a group III nitride compound semiconductor stacked structure where a group III nitride compound semiconductor layer having good crystallinity is stably stacked on a dissimilar substrate.The group III nitride compound semiconductor stacked structure of the present invention is a group III nitride compound semiconductor stacked structure comprising a substrate having provided thereon a first layer comprising a group III nitride compound semiconductor and a second layer being in contact with the first layer and comprising a group III nitride compound semiconductor, wherein the first layer contains a columnar crystal with a definite crystal interface and the columnar crystal density is from 1×103 to 1×105 crystals/μm2.

摘要翻译： 本发明的目的是获得具有良好结晶度的III族氮化物化合物半导体层稳定地层叠在不同的基板上的III族氮化物化合物半导体层叠结构。 本发明的III族氮化物化合物半导体堆叠结构是III族氮化物化合物半导体层叠结构，其包括在其上设置有包含III族氮化物化合物半导体的第一层和与第一层接触的第二层的衬底， III族氮化物化合物半导体，其中第一层含有具有确定的结晶界面的柱状晶体，柱状晶体密度为1×10 3〜1×10 5个晶体/μm2。

公开(公告)号：US08882971B2

公开(公告)日：2014-11-11

申请号：US12987828

申请日：2011-01-10

申请人： Hisayuki Miki ,  Kenzo Hanawa ,  Yasunori Yokoyama ,  Yasumasa Sasaki

发明人： Hisayuki Miki ,  Kenzo Hanawa ,  Yasunori Yokoyama ,  Yasumasa Sasaki

IPC分类号： C23C14/06 ,  C23C14/34 ,  H01L33/00 ,  C23C14/54

CPC分类号： C23C14/34 ,  C23C14/0647 ,  C23C14/541 ,  H01L33/007

摘要： A sputtering apparatus (1) includes: a chamber (10) having an inside maintained in a depressurized state to generate plasma discharge (20); a cathode (22) placed in the chamber (10) and holding a target (21); and a substrate holder (60) holding a substrate (110) so that one surface of the substrate (110) faces the surface of the target (21). The substrate (110) is arranged at an upper portion in the sputtering apparatus (1) with the surface of the substrate (110) facing downward. The target (21) is arranged at a lower portion in the sputtering apparatus (1) with the surface of the target (21) facing upward. The sputtering apparatus (1) includes a heater (65) for heating the substrate (110). The temperature of the substrate (110) is raised by absorbing electromagnetic waves radiated from the heater (65). A method of manufacturing a semiconductor light-emitting element using the sputtering apparatus is also disclosed.

摘要翻译： 溅射装置（1）包括：具有保持在减压状态的内部以产生等离子体放电（20）的室（10）; 放置在所述室（10）中并保持靶（21）的阴极（22）; 以及保持基板（110）的基板保持器（60），使得基板（110）的一个表面面向目标（21）的表面。 基板（110）布置在溅射装置（1）的上部，基板（110）的表面朝下。 目标（21）被布置在溅射装置（1）的下部，靶（21）的表面朝上。 溅射装置（1）包括用于加热基板（110）的加热器（65）。 通过吸收从加热器（65）辐射的电磁波来升高基板（110）的温度。 还公开了使用溅射装置制造半导体发光元件的方法。

公开(公告)号：US20110198212A1

公开(公告)日：2011-08-18

申请号：US12987828

申请日：2011-01-10

申请人： Hisayuki MIKI ,  Kenzo Hanawa ,  Yasunori Yokoyama ,  Yasumasa Sasaki

发明人： Hisayuki MIKI ,  Kenzo Hanawa ,  Yasunori Yokoyama ,  Yasumasa Sasaki

IPC分类号： C23C14/34

CPC分类号： C23C14/34 ,  C23C14/0647 ,  C23C14/541 ,  H01L33/007

摘要： A sputtering apparatus (1) includes: a chamber (10) having an inside maintained in a depressurized state to generate plasma discharge (20); a cathode (22) placed in the chamber (10) and holding a target (21); and a substrate holder (60) holding a substrate (110) so that one surface of the substrate (110) faces the surface of the target (21). The substrate (110) is arranged at an upper portion in the sputtering apparatus (1) with the surface of the substrate (110) facing downward. The target (21) is arranged at a lower portion in the sputtering apparatus (1) with the surface of the target (21) facing upward. The sputtering apparatus (1) includes a heater (65) for heating the substrate (110). The temperature of the substrate (110) is raised by absorbing electromagnetic waves radiated from the heater (65). A method of manufacturing a semiconductor light-emitting element using the sputtering apparatus is also disclosed.

摘要翻译： 溅射装置（1）包括：具有保持在减压状态的内部以产生等离子体放电（20）的室（10）; 放置在所述室（10）中并保持靶（21）的阴极（22）; 以及保持基板（110）的基板保持器（60），使得基板（110）的一个表面面向目标（21）的表面。 基板（110）布置在溅射装置（1）的上部，基板（110）的表面朝下。 目标（21）被布置在溅射装置（1）的下部，靶（21）的表面朝上。 溅射装置（1）包括用于加热基板（110）的加热器（65）。 通过吸收从加热器（65）辐射的电磁波来升高基板（110）的温度。 还公开了使用溅射装置制造半导体发光元件的方法。

公开(公告)号：US20090146161A1

公开(公告)日：2009-06-11

申请号：US12300306

申请日：2007-05-08

申请人： Hisayuki Miki ,  Hiromitsu Sakai ,  Kenzo Hanawa ,  Yasunori Yokoyama ,  Yasumasa Sasaki ,  Hiroaki Kaji

发明人： Hisayuki Miki ,  Hiromitsu Sakai ,  Kenzo Hanawa ,  Yasunori Yokoyama ,  Yasumasa Sasaki ,  Hiroaki Kaji

IPC分类号： H01L29/205 ,  H01L21/20 ,  H01L33/00

CPC分类号： C23C16/303 ,  C23C16/0272 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/02403 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/02595 ,  H01L21/0262 ,  H01L21/02631 ,  H01L33/007 ,  H01L33/16 ,  H01L33/32 ,  H01L2924/0002 ,  H01L2924/00

摘要： An object of the present invention is to obtain a group III nitride compound semiconductor stacked structure where a group III nitride compound semiconductor layer having good crystallinity is stably stacked on a dissimilar substrate.The group III nitride compound semiconductor stacked structure of the present invention is a group III nitride compound semiconductor stacked structure comprising a substrate having provided thereon a first layer comprising a group III nitride compound semiconductor and a second layer being in contact with the first layer and comprising a group III nitride compound semiconductor, wherein the first layer contains a columnar crystal with a definite crystal interface and the columnar crystal density is from 1×103 to 1×105 crystals/μm2.

摘要翻译： 本发明的目的是获得具有良好结晶度的III族氮化物化合物半导体层稳定地层叠在不同的基板上的III族氮化物化合物半导体层叠结构。 本发明的III族氮化物化合物半导体堆叠结构是III族氮化物化合物半导体层叠结构，其包括在其上设置有包含III族氮化物化合物半导体的第一层和与第一层接触的第二层的衬底， III族氮化物化合物半导体，其中第一层包含具有确定的晶体界面的柱状晶体，并且柱状晶体密度为1×10 3〜1×10 5个晶体/ m 2。