CHARGED PARTICLE BEAM DEVICE, SIMULATION METHOD, AND SIMULATION DEVICE

    公开(公告)号:US20170213695A1

    公开(公告)日:2017-07-27

    申请号:US15329638

    申请日:2014-07-28

    申请人: HITACHI, LTD.

    摘要: A simulation device calculates a detection number of electrons generated by charged particles radiated to a sample by a simulation and generates a simulation image of the sample. The simulation device holds penetration length information (272) in which incidence conditions of the charged particles and a penetration length are associated with each other, sample configuration information (271) which shows a configuration of a sample, and emission electron number information in which the incidence conditions of the charged particles and an emission electron number are associated with each other. The simulation device calculates the number of electrons emitted from a predetermined incidence point, on the basis of incidence conditions at the predetermined incidence point, the penetration length information (272), the sample configuration information (271), and the emission electron number information.

    ELECTRON BEAM DEVICE
    3.
    发明申请

    公开(公告)号:US20190295805A1

    公开(公告)日:2019-09-26

    申请号:US16269345

    申请日:2019-02-06

    申请人: HITACHI, LTD.

    IPC分类号: H01J37/12 H01J37/28

    摘要: The present invention provides an electron beam device suitable for observing the bottom of a deep groove or a deep hole with a high degree of accuracy under a large current condition. The electron beam device has: an electron optical system having an irradiation optical system to irradiate an aperture 153 with an electron beam 116 emitted from an electron source 100 and a reduction projection optical system to project and form an aperture image of the aperture on a sample 114; and a control unit 146 to control a projection magnification of the aperture image of the aperture projected and formed on the sample and an aperture angle 402 of the electron beam emitted to the sample by the electron optical system.