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    STRUCTURE AND METHOD FOR A FISHBONE DIFFERENTIAL CAPACITOR
    4.
    发明申请
    STRUCTURE AND METHOD FOR A FISHBONE DIFFERENTIAL CAPACITOR 有权
    FISHBONE差分电容器的结构和方法

    公开(公告)号：US20130228894A1

    公开(公告)日：2013-09-05

    申请号：US13411052

    申请日：2012-03-02

    申请人： Hsiao-Tsung Yen ,  Yu-Ling Lin ,  Chin-Wei Kuo ,  Ho-Hsiang Chen ,  Min-Chie Jeng

    发明人： Hsiao-Tsung Yen ,  Yu-Ling Lin ,  Chin-Wei Kuo ,  Ho-Hsiang Chen ,  Min-Chie Jeng

    IPC分类号： H01L27/06 ,  H01L21/768

    CPC分类号： H01L23/5223 ,  H01L28/60 ,  H01L28/88 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The present disclosure provides an integrated circuit. The integrated circuit includes a substrate having a surface that is defined by a first axis and a second axis perpendicular to the first axis; and a capacitor structure disposed on the substrate. The capacitor structure includes a first conductive component; a second conductive component and a third conductive component symmetrically configured on opposite sides of the first conductive component. The first, second and third conductive components are separated from each other by respective dielectric material.

    摘要翻译： 本发明提供集成电路。 集成电路包括具有由第一轴线和垂直于第一轴线的第二轴线限定的表面的基板; 以及设置在基板上的电容器结构。 电容器结构包括第一导电元件; 对称地配置在第一导电部件的相对侧上的第二导电部件和第三导电部件。 第一，第二和第三导电部件通过相应的介电材料彼此分离。

    STRUCTURE AND METHOD FOR A HIGH-K TRANSFORMER WITH CAPACITIVE COUPLING
    6.
    发明申请
    STRUCTURE AND METHOD FOR A HIGH-K TRANSFORMER WITH CAPACITIVE COUPLING 有权
    具有电容耦合的高K变压器的结构和方法

    公开(公告)号：US20130099352A1

    公开(公告)日：2013-04-25

    申请号：US13280786

    申请日：2011-10-25

    申请人： Hsiao-Tsung Yen ,  Yu-Ling Lin ,  Chin-Wei Kuo ,  Ho-Hsiang Chen ,  Min-Chie Jeng

    发明人： Hsiao-Tsung Yen ,  Yu-Ling Lin ,  Chin-Wei Kuo ,  Ho-Hsiang Chen ,  Min-Chie Jeng

    IPC分类号： H01L23/48 ,  H01L21/768

    CPC分类号： H01L23/5222 ,  H01F17/0013 ,  H01L21/76805 ,  H01L21/76877 ,  H01L23/5225 ,  H01L23/5227 ,  H01L23/528 ,  H01L23/552 ,  H01L23/642 ,  H01L23/645 ,  H01L28/10 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The present disclosure provides a semiconductor device. The semiconductor device includes a semiconductor substrate having an integrated circuit (IC) device; an interconnect structure disposed on the semiconductor substrate and coupled with the IC device; and a transformer disposed on the semiconductor substrate and integrated in the interconnect structure. The transformer includes a first conductive feature; a second conductive feature inductively coupled with the first conductive feature; a third conductive feature electrically connected to the first conductive feature; and a fourth conductive feature electrically connected to the second conductive feature. The third and fourth conductive features are designed and configured to be capacitively coupled to increase a coupling coefficient of the transformer.

    摘要翻译： 本发明提供一种半导体器件。 半导体器件包括具有集成电路（IC）器件的半导体衬底; 布置在半导体衬底上并与IC器件耦合的互连结构; 以及设置在半导体衬底上并集成在互连结构中的变压器。 变压器包括第一导电特征; 与所述第一导电特征电感耦合的第二导电特征; 电连接到第一导电特征的第三导电特征; 以及电连接到第二导电特征的第四导电特征。 第三和第四导电特征被设计和配置为电容耦合以增加变压器的耦合系数。

    Integrated Antenna Structure
    8.
    发明申请
    Integrated Antenna Structure 有权
    集成天线结构

    公开(公告)号：US20140008773A1

    公开(公告)日：2014-01-09

    申请号：US13541937

    申请日：2012-07-05

    申请人： Hsiao-Tsung Yen ,  Yu-Ling Lin ,  Chin-Wei Kuo ,  Ho-Hsiang Chen ,  Min-Chie Jeng

    发明人： Hsiao-Tsung Yen ,  Yu-Ling Lin ,  Chin-Wei Kuo ,  Ho-Hsiang Chen ,  Min-Chie Jeng

    IPC分类号： H01L25/065 ,  H01L21/50

    CPC分类号： H01Q1/38 ,  H01L23/66 ,  H01L25/0652 ,  H01L25/0657 ,  H01L25/16 ,  H01L25/18 ,  H01L2223/6677 ,  H01L2924/0002 ,  H01Q1/2283 ,  H01Q1/40 ,  H01Q7/00 ,  H01L2924/00

    摘要： Some embodiments relate to a semiconductor module comprising an integrated antenna structure configured to wirelessly transmit signals. The integrated antenna structure has a lower metal layer and an upper metal layer. The lower metal layer is disposed on a lower die and is connected to a ground terminal. The upper metal layer is disposed on an upper die and is connected to a signal generator configured to generate a signal to be wirelessly transmitted. The upper die is stacked on the lower die and is connected to the lower die by way of an adhesion layer having one or more micro-bumps. By connecting the lower and upper die together by way of the adhesion layer, the lower and upper metal layers are separated from each other by a large spacing that provides for a good performance of the integrated antenna structure.

    摘要翻译： 一些实施例涉及包括被配置为无线传输信号的集成天线结构的半导体模块。 集成天线结构具有下金属层和上金属层。 下金属层设置在下模上并连接到接地端子。 上金属层设置在上模上并连接到被配置为产生要无线传输的信号的信号发生器。 上模具堆叠在下模上，并通过具有一个或多个微凸块的粘合层连接到下模。 通过将粘合层连接在一起，下部和上部金属层彼此间隔开大间隔，从而提供了集成天线结构的良好性能。