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    Protruded contact and insertion of inter-layer-dielectric material to match damascene hardmask to improve undercut for low-k interconnects
    5.
    发明申请
    Protruded contact and insertion of inter-layer-dielectric material to match damascene hardmask to improve undercut for low-k interconnects 有权
    突出接触和插入层间介电材料以匹配镶嵌硬掩模，以改善低k互连的底切

    公开(公告)号：US20070264820A1

    公开(公告)日：2007-11-15

    申请号：US11434318

    申请日：2006-05-15

    申请人： Wuping Liu ,  Raymond Joy ,  Beichao Zhang ,  Liang Hsia ,  Boon Seah ,  Shyam Pal

    发明人： Wuping Liu ,  Raymond Joy ,  Beichao Zhang ,  Liang Hsia ,  Boon Seah ,  Shyam Pal

    IPC分类号： H01L21/4763

    CPC分类号： H01L21/76802 ,  H01L21/02063 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31133 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/76814

    摘要： An embodiment of the invention shows a process to form a damascene opening preferably without hardmask overhang or dielectric layer undercut/void. The low-k dielectric material can be sandwiched in two hardmask films to form the dielectric film through which an interconnect opening is etched. A first example embodiment comprises the following. We form a lower interconnect and an insulating layer over a semiconductor structure. We form a first hardmask a dielectric layer, and a second hardmask layer, over the lower interconnect and insulating layer. We etch a first interconnect opening in the first hardmask, the dielectric layer and the second hardmask layer. Lastly, we form an interconnect in the first interconnect opening.

    摘要翻译： 本发明的一个实施例示出了一种形成镶嵌开口的方法，优选地不具有硬掩模悬垂或电介质层底切/空隙。 低k电介质材料可以被夹在两个硬掩模膜中以形成蚀刻互连开口的电介质膜。 第一示例性实施例包括以下。 我们在半导体结构上形成下互连和绝缘层。 我们在下互连和绝缘层上形成第一硬掩模介电层和第二硬掩模层。 我们蚀刻第一硬掩模，电介质层和第二硬掩模层中的第一互连开口。 最后，我们在第一个互连开口中形成互连。

    Method to fabricate aligned dual damacene openings
    6.
    发明申请
    Method to fabricate aligned dual damacene openings 有权
    制造对齐双重断裂孔的方法

    公开(公告)号：US20060003573A1

    公开(公告)日：2006-01-05

    申请号：US11174805

    申请日：2005-07-05

    申请人： Yeow Lim ,  Wuping Liu ,  Tae Lee ,  Bei Zhang ,  Juan Boon Tan ,  Alan Cuthbertson ,  Chin Neo

    发明人： Yeow Lim ,  Wuping Liu ,  Tae Lee ,  Bei Zhang ,  Juan Boon Tan ,  Alan Cuthbertson ,  Chin Neo

    IPC分类号： H01L21/4763

    CPC分类号： H01L21/76807 ,  H01L21/76829 ,  H01L21/76834

    摘要： An aligned dual damascene opening structure, comprising the following. A structure having a metal structure formed thereover. A patterned layer stack over the metal structure; the layer stack comprising, in ascending order: a patterned bottom etch stop layer; a patterned lower dielectric material layer; a patterned middle etch stop layer; and a patterned middle dielectric material layer; the lower and middle dielectric layers being comprised of the same material. An upper trench opening in the patterned bottom etch stop layer and the patterned lower dielectric material layer; and a lower via opening in the patterned middle etch stop layer and the patterned middle dielectric material layer. The lower via opening being in communication with the upper trench opening. Wherein the upper trench opening and the lower via opening comprise an aligned dual damascene opening.

    摘要翻译： 对准的双镶嵌开口结构，包括以下。 具有形成在其上的金属结构的结构。 金属结构上的图案层叠层; 所述层堆叠按升序包括：图案化的底部蚀刻停止层; 图案化的下介电材料层; 图案化的中间蚀刻停止层; 和图案化的中间介电材料层; 下部和中间介电层由相同的材料组成。 在图案化的底部蚀刻停止层和图案化的下部介电材料层中的上部沟槽开口; 以及图案化的中间蚀刻停止层和图案化的中间介电材料层中的下通孔开口。 下通道开口与上沟槽开口连通。 其中上沟槽开口和下通孔开口包括对准的双镶嵌开口。

    Method to fabricate aligned dual damascene openings
    7.
    发明申请
    Method to fabricate aligned dual damascene openings 有权

    公开(公告)号：US20050090095A1

    公开(公告)日：2005-04-28

    申请号：US10690998

    申请日：2003-10-22

    申请人： Yeow Lim ,  Wuping Liu ,  Tae Lee ,  Bei Zhang ,  Juan Tan ,  Alan Cuthbertson ,  Chin Neo

    发明人： Yeow Lim ,  Wuping Liu ,  Tae Lee ,  Bei Zhang ,  Juan Tan ,  Alan Cuthbertson ,  Chin Neo

    IPC分类号： H01L21/4763 ,  H01L21/768 ,  H01L29/06

    CPC分类号： H01L21/76807 ,  H01L21/76829 ,  H01L21/76834

    摘要： A method of forming an aligned dual damascene opening, comprising including the following sequential steps. A structure having a metal structure formed thereover is provided. A layer stack is formed over the metal structure. The layer stack comprises, in ascending order: a bottom etch stop layer; a lower dielectric material layer; a middle etch stop layer; a middle dielectric material layer; and an upper dielectric layer. The upper dielectric layer is patterned to form an opening exposing a portion of the underlying middle dielectric material layer. The opening having a width. A patterned mask layer is formed over the patterned upper dielectric layer leaving exposed opposing portions of the patterned upper dielectric layer. The middle dielectric material layer is patterned to form an opening therein using the patterned mask layer and the exposed portions of the upper dielectric layer as masks. The middle dielectric material layer opening exposing a portion of the middle etch stop layer. The middle etch stop layer is removed at its exposed portion to form a patterned middle etch stop layer having an opening exposing a portion of the lower dielectric material layer. Simultaneously patterning: the patterned middle dielectric material layer using the patterned upper dielectric layer as a mask to form an inchoate upper trench opening; and the lower dielectric material layer using the patterned mask layer and the patterned middle etch stop layer as masks to form an inchoate lower via opening aligned with the inchoate upper trench opening. The inchoate lower via opening exposing a portion of the underlying bottom etch stop layer. The patterned mask layer is removed. The patterned upper dielectric material layer, the exposed portions of the patterned middle etch stop layer and the exposed portion of the bottom etch stop layer are removed to convert: the inchoate upper trench opening into a final upper trench opening; and the inchoate lower via opening into a final lower via opening to form the dual damascene opening.

    Barrier metal cap structure on copper lines and vias
    8.
    发明申请
    Barrier metal cap structure on copper lines and vias 审中-公开
    铜线和通孔上的金属盖结构

    公开(公告)号：US20050191851A1

    公开(公告)日：2005-09-01

    申请号：US11119274

    申请日：2005-04-29

    申请人： Wuping Liu ,  Beichao Zhang ,  Liang Hsia

    发明人： Wuping Liu ,  Beichao Zhang ,  Liang Hsia

    IPC分类号： H01L21/768 ,  H01L21/4763 ,  H01L21/44 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

    CPC分类号： H01L21/76849 ,  H01L21/76805 ,  H01L21/76807 ,  H01L21/7684 ,  H01L21/76865 ,  H01L21/76877

    摘要： A new method is provided for the creation of damascene copper interconnects. A method is provided whereby created copper surfaces are capped with a layer of barrier material. With the cap structure of barrier material, the surface of the created copper interconnect is shielded against outside influences such as effects of processing chemicals. As a result of the creation of a cap of barrier material, conventional concerns of copper oxidation, copper back-sputtering and the like are eliminated.

    摘要翻译： 提供了一种用于创建镶嵌铜互连的新方法。 提供了一种方法，由此产生的铜表面被一层屏障材料盖住。 通过阻挡材料的盖结构，所制造的铜互连的表面被屏蔽以防止诸如加工化学品的影响等外部影响。 作为阻挡材料盖的形成的结果，消除了铜氧化，铜背溅射等的常规问题。