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    BATTERY PACK
    2.
    发明申请
    BATTERY PACK 有权
    电池组

    公开(公告)号：US20130302651A1

    公开(公告)日：2013-11-14

    申请号：US13609124

    申请日：2012-09-10

    申请人： Hyun-Joong KIM ,  Kyoung-Hwan Noh ,  Jun-Ho Lee ,  Hyun-Kook Kim

    发明人： Hyun-Joong KIM ,  Kyoung-Hwan Noh ,  Jun-Ho Lee ,  Hyun-Kook Kim

    IPC分类号： H01M2/00

    CPC分类号： H05K1/148 ,  H01M2/204 ,  H01M10/425 ,  H05K1/0263 ,  H05K2201/10037 ,  H05K2201/10151 ,  H05K2201/10356 ,  H05K2201/10409

    摘要： A battery pack including a plurality of battery cells, each including an electrode terminal; and a circuit board assembly including: a first circuit board electrically connecting the electrode terminals of adjacent battery cells of the plurality of battery cells; a second circuit board electrically connected to the first circuit board; and a connection wire electrically connected between the second circuit board and the first circuit board.

    摘要翻译： 一种电池组，包括多个电池单元，每个电池单元包括电极端子; 以及电路板组件，包括：电连接所述多个电池单元的相邻电池单元的电极端子的第一电路板; 电连接到第一电路板的第二电路板; 以及电连接在第二电路板和第一电路板之间的连接线。

    Image forming apparatus employing an electrical charge removal device with an improved configuration
    4.
    发明授权
    Image forming apparatus employing an electrical charge removal device with an improved configuration 有权
    采用具有改进结构的电荷去除装置的图像形成装置

    公开(公告)号：US08396394B2

    公开(公告)日：2013-03-12

    申请号：US12787931

    申请日：2010-05-26

    申请人： Jun-Ho Lee ,  Jeong-Yong Ju

    发明人： Jun-Ho Lee ,  Jeong-Yong Ju

    IPC分类号： G03G15/16

    CPC分类号： G03G21/06 ,  G03G15/163 ,  G03G21/1647 ,  G03G21/1661 ,  G03G21/168 ,  G03G2221/1642 ,  G03G2221/1654

    摘要： An image forming apparatus, including: a main body; an image carrying body disposed in the main body, a transfer unit and an electrical charge removal unit. The image forming apparatus forms a visible image on the image carrying body by carrying out charging, exposing and developing processes. The transfer unit transfers the visible image from the image carrying body to a printing medium. The electrical charge removal unit is configured to remove residual electrical charge from the printing medium, and is movable, in cooperation with at least one replaceable component part of the transfer unit, between an operable position at which the electrical charge removal unit is capable of removing the electrical charge from the printing medium and a non-interfering position at which the electrical charge removal unit does not interfere with the movement of the at least one replaceable component part of the transfer unit being received into or being removed from the main body for replacement.

    摘要翻译： 一种图像形成装置，包括：主体; 设置在主体中的图像承载体，转印单元和电荷去除单元。 图像形成装置通过进行充电，曝光和显影处理在图像载体上形成可见图像。 传送单元将可见图像从图像承载体传送到打印介质。 电荷去除单元被配置为从打印介质去除残留的电荷，并且可以与所述转印单元的至少一个可替换的组成部分协作地在所述电荷去除单元能够移除的可操作位置之间移动 来自打印介质的电荷和非干扰位置，在该非干扰位置，电荷消除单元不干扰转移单元的至少一个可更换部件的移动，该移动单元被接收到主体中或从主体移除以进行更换 。

    Methods of fabricating semiconductor devices including elevated source and drain regions
    5.
    发明授权
    Methods of fabricating semiconductor devices including elevated source and drain regions 有权
    制造包括升高的源极和漏极区域的半导体器件的方法

    公开(公告)号：US07867865B2

    公开(公告)日：2011-01-11

    申请号：US12166575

    申请日：2008-07-02

    申请人： Jin-Bum Kim ,  Young-Pil Kim ,  Jung-Yun Won ,  Hion-Suck Baik ,  Jun-Ho Lee

    发明人： Jin-Bum Kim ,  Young-Pil Kim ,  Jung-Yun Won ,  Hion-Suck Baik ,  Jun-Ho Lee

    IPC分类号： H01L21/336

    CPC分类号： H01L21/823456 ,  H01L21/823418 ,  H01L27/1052 ,  H01L27/10876 ,  H01L27/10894 ,  H01L29/4236 ,  H01L29/66621

    摘要： Methods of fabricating semiconductor devices are provided. A substrate having active patterns and isolating layer patterns is prepared. Each of the isolating layer patterns has an upper surface higher than that of each of the active patterns. A spacer layer having a uniform thickness is formed on the substrate. The spacer layer is etched to form a spacer on a sidewall of each of the isolating layer patterns. A gate structure is formed on each of the active patterns. A selective epitaxial growth (SEG) process is performed on the active patterns having the gate structure to form isolated epitaxial layers that have upper surfaces higher than those of the isolating layer patterns, on the active patterns. Related semiconductor devices are also provided.

    摘要翻译： 提供制造半导体器件的方法。 制备具有活性图案和隔离层图案的基板。 每个隔离层图案的上表面高于每个活动图案的上表面。 在基板上形成具有均匀厚度的间隔层。 蚀刻间隔层以在每个隔离层图案的侧壁上形成间隔物。 在每个有源图案上形成栅极结构。 对具有栅极结构的有源图案进行选择性外延生长（SEG）处理，以在活性图案上形成具有高于绝缘层图案的上表面的隔离的外延层。 还提供了相关的半导体器件。

    Semiconductor Devices Including Elevated Source and Drain Regions and Methods of Fabricating the Same
    8.
    发明申请
    Semiconductor Devices Including Elevated Source and Drain Regions and Methods of Fabricating the Same 有权
    包括提升源和排水区的半导体器件及其制造方法

    公开(公告)号：US20090008717A1

    公开(公告)日：2009-01-08

    申请号：US12166575

    申请日：2008-07-02

    申请人： Jin-Bum Kim ,  Young-Pil Kim ,  Jung-Yun Won ,  Hion-Suck Baik ,  Jun-Ho Lee

    发明人： Jin-Bum Kim ,  Young-Pil Kim ,  Jung-Yun Won ,  Hion-Suck Baik ,  Jun-Ho Lee

    IPC分类号： H01L21/336 ,  H01L27/088

    CPC分类号： H01L21/823456 ,  H01L21/823418 ,  H01L27/1052 ,  H01L27/10876 ,  H01L27/10894 ,  H01L29/4236 ,  H01L29/66621

    摘要： Methods of fabricating semiconductor devices are provided. A substrate having active patterns and isolating layer patterns is prepared. Each of the isolating layer patterns has an upper surface higher than that of each of the active patterns. A spacer layer having a uniform thickness is formed on the substrate. The spacer layer is etched to form a spacer on a sidewall of each of the isolating layer patterns. A gate structure is formed on each of the active patterns. A selective epitaxial growth (SEG) process is performed on the active patterns having the gate structure to form isolated epitaxial layers that have upper surfaces higher than those of the isolating layer patterns, on the active patterns. Related semiconductor devices are also provided.

    摘要翻译： 提供制造半导体器件的方法。 制备具有活性图案和隔离层图案的基板。 每个隔离层图案的上表面高于每个活动图案的上表面。 在基板上形成具有均匀厚度的间隔层。 蚀刻间隔层以在每个隔离层图案的侧壁上形成间隔物。 在每个有源图案上形成栅极结构。 对具有栅极结构的有源图案进行选择性外延生长（SEG）处理，以在活性图案上形成具有高于绝缘层图案的上表面的隔离的外延层。 还提供了相关的半导体器件。

    End-pumped vertical external cavity surface emitting laser
    10.
    发明申请
    End-pumped vertical external cavity surface emitting laser 有权

    公开(公告)号：US20060251140A1

    公开(公告)日：2006-11-09

    申请号：US11399391

    申请日：2006-04-07

    申请人： Jun-Ho Lee

    发明人： Jun-Ho Lee

    IPC分类号： H01S3/04 ,  H01S3/091 ,  H01S3/08 ,  H01S3/092

    CPC分类号： H01S5/183 ,  H01S3/109 ,  H01S5/02 ,  H01S5/0213 ,  H01S5/0224 ,  H01S5/024 ,  H01S5/041 ,  H01S5/14

    摘要： There is provided an end-pumped vertical external cavity surface emitting laser (VECSEL) in which a pump laser beam is incident on a laser chip at a right angle. In the external cavity surface emitting laser, a laser chip package is provided with a laser chip emitting light at a first wavelength by optical pumping, an external mirror is spaced apart from a top surface of the laser chip package to transmit a portion of the light emitted from the laser chip to the outside and to reflect the remainder to the laser chip, a heat sink is coupled to the bottom surface of the laser chip package to discharge heat generated by the laser chip, and a pump laser faces a bottom surface of the heat sink to emit pump light at a second wavelength perpendicular to the laser chip.