公开(公告)号：US12074138B2

公开(公告)日：2024-08-27

申请号：US18378978

申请日：2023-10-11

Applicant: Intel Corporation

Inventor： Mark T. Bohr ,  Wilfred Gomes ,  Rajesh Kumar ,  Pooya Tadayon ,  Doug Ingerly

IPC: H01L25/065 ,  H01L23/00 ,  H01L23/522 ,  H01L23/538

CPC classification number: H01L25/0655 ,  H01L23/5226 ,  H01L23/5384 ,  H01L24/13 ,  H01L2225/06541

Abstract: Hyperchip structures and methods of fabricating hyperchips are described. In an example, an integrated circuit assembly includes a first integrated circuit chip having a device side opposite a backside. The device side includes a plurality of transistor devices and a plurality of device side contact points. The backside includes a plurality of backside contacts. A second integrated circuit chip includes a device side having a plurality of device contact points thereon. The second integrated circuit chip is on the first integrated circuit chip in a device side to device side configuration. Ones of the plurality of device contact points of the second integrated circuit chip are coupled to ones of the plurality of device contact points of the first integrated circuit chip. The second integrated circuit chip is smaller than the first integrated circuit chip from a plan view perspective.

公开(公告)号：US11387198B2

公开(公告)日：2022-07-12

申请号：US16635536

申请日：2017-09-29

Applicant: Intel Corporation

Inventor： Wilfred Gomes ,  Mark Bohr ,  Doug Ingerly ,  Rajesh Kumar ,  Harish Krishnamurthy ,  Nachiket Venkappayya Desai

IPC: H01L23/64 ,  H01L21/48 ,  H01L21/56 ,  H01L23/498 ,  H01L23/00 ,  H01L25/065 ,  H01L25/00

Abstract: Techniques and mechanisms for providing an inductor with an integrated circuit (IC) die. In an embodiment, the IC die comprises integrated circuitry and one or more first metallization layers. The IC die is configured to couple to a circuit device including one or more second metallization layers, where such coupling results in the formation of an inductor which is coupled to the integrated circuitry. One or more loop structures of the inductor each span both some or all of the one or more first metallization layers and some or all of the one or more second metallization layers. In another embodiment, the IC die or the circuit device includes a ferromagnetic material to concentrate a magnetic flux which is provided with the inductor.

公开(公告)号：US11139300B2

公开(公告)日：2021-10-05

申请号：US16689789

申请日：2019-11-20

Applicant: Intel Corporation

Inventor： Wilfred Gomes ,  Mauro J. Kobrinsky ,  Abhishek A. Sharma ,  Rajesh Kumar ,  Kinyip Phoa ,  Elliot Tan ,  Tahir Ghani ,  Swaminathan Sivakumar

IPC: H01L27/108 ,  H01L27/06 ,  H01L29/786 ,  H01L23/522 ,  H01L23/528 ,  G11C5/06

Abstract: A three-dimensional memory array may include a first memory array and a second memory array, stacked above the first. Some memory cells of the first array may be coupled to a first layer selector transistor, while some memory cells of the second array may be coupled to a second layer selector transistor. The first and second layer selector transistor may be coupled to one another and to a peripheral circuit that controls operation of the first and/or second memory arrays. A different layer selector transistor may be used for each row of memory cells of a given memory array and/or for each column of memory cells of a given memory array. Such designs may allow increasing density of memory cells in a memory array having a given footprint area, or, conversely, reducing the footprint area of the memory array with a given memory cell density.

公开(公告)号：US11024601B2

公开(公告)日：2021-06-01

申请号：US16348448

申请日：2017-12-21

Applicant: Intel Corporation

Inventor： Mark T. Bohr ,  Wilfred Gomes ,  Rajesh Kumar ,  Pooya Tadayon ,  Doug Ingerly

IPC: H01L25/065 ,  H01L23/522 ,  H01L23/538 ,  H01L23/00

Abstract: Hyperchip structures and methods of fabricating hyperchips are described. In an example, an integrated circuit assembly includes a first integrated circuit chip having a device side opposite a backside. The device side includes a plurality of transistor devices and a plurality of device side contact points. The backside includes a plurality of backside contacts. A second integrated circuit chip includes a device side having a plurality of device contact points thereon. The second integrated circuit chip is on the first integrated circuit chip in a device side to device side configuration. Ones of the plurality of device contact points of the second integrated circuit chip are coupled to ones of the plurality of device contact points of the first integrated circuit chip. The second integrated circuit chip is smaller than the first integrated circuit chip from a plan view perspective.

公开(公告)号：US20210159229A1

公开(公告)日：2021-05-27

申请号：US16691163

申请日：2019-11-21

Applicant: Intel Corporation

Inventor： Wilfred Gomes ,  Kinyip Phoa ,  Mauro J. Kobrinsky ,  Tahir Ghani ,  Uygar E. Avci ,  Rajesh Kumar

IPC: H01L27/108 ,  H01L29/06 ,  H01L29/423 ,  H01L29/49 ,  H01L29/51 ,  H01L29/786 ,  H01L29/78 ,  H01L49/02

Abstract: Described herein are IC devices that include semiconductor nanoribbons stacked over one another to realize high-density three-dimensional (3D) dynamic random-access memory (DRAM). An example device includes a first semiconductor nanoribbon, a second semiconductor nanoribbon, a first source or drain (S/D) region and a second S/D region in each of the first and second nanoribbons, a first gate stack at least partially surrounding a portion of the first nanoribbon between the first and second S/D regions in the first nanoribbon, and a second gate stack, not electrically coupled to the first gate stack, at least partially surrounding a portion of the second nanoribbon between the first and second S/D regions in the second nanoribbon. The device further includes a bitline coupled to the first S/D regions of both the first and second nanoribbons.

公开(公告)号：US20210151438A1

公开(公告)日：2021-05-20

申请号：US16689789

申请日：2019-11-20

Applicant: Intel Corporation

Inventor： Wilfred Gomes ,  Mauro J. Kobrinsky ,  Abhishek A. Sharma ,  Rajesh Kumar ,  Kinyip Phoa ,  Elliot Tan ,  Tahir Ghani ,  Swaminathan Sivakumar

IPC: H01L27/108 ,  G11C5/06 ,  H01L29/786 ,  H01L23/522 ,  H01L23/528 ,  H01L27/06

Abstract: A three-dimensional memory array may include a first memory array and a second memory array, stacked above the first. Some memory cells of the first array may be coupled to a first layer selector transistor, while some memory cells of the second array may be coupled to a second layer selector transistor. The first and second layer selector transistor may be coupled to one another and to a peripheral circuit that controls operation of the first and/or second memory arrays. A different layer selector transistor may be used for each row of memory cells of a given memory array and/or for each column of memory cells of a given memory array. Such designs may allow increasing density of memory cells in a memory array having a given footprint area, or, conversely, reducing the footprint area of the memory array with a given memory cell density.

公开(公告)号：US10409360B2

公开(公告)日：2019-09-10

申请号：US15256101

申请日：2016-09-02

Applicant: Intel Corporation

Inventor： Herbert Hum ,  Eric Sprangle ,  Doug Carmean ,  Rajesh Kumar

IPC: G06F1/24 ,  G06F1/3293 ,  G06F1/3203 ,  G06F1/324 ,  G06F1/3296 ,  G06T1/20 ,  G06F1/3206 ,  G06F9/50 ,  G06F13/24 ,  G06F9/38 ,  G06F9/46 ,  G06F1/3228 ,  G06F1/20 ,  G06F1/3287 ,  G06F12/0875

Abstract: Techniques to control power and processing among a plurality of asymmetric cores. In one embodiment, one or more asymmetric cores are power managed to migrate processes or threads among a plurality of cores according to the performance and power needs of the system.

公开(公告)号：US09870046B2

公开(公告)日：2018-01-16

申请号：US13954979

申请日：2013-07-31

Applicant: Intel Corporation

Inventor： Herbert Hum ,  Eric Sprangle ,  Doug Carmean ,  Rajesh Kumar

IPC: G06F1/24 ,  G06F9/00 ,  G06F1/32 ,  G06T1/20 ,  G06F9/50 ,  G06F13/24 ,  G06F9/38 ,  G06F9/46 ,  G06F1/20 ,  G06F12/0875

CPC classification number: G06F1/3293 ,  G06F1/206 ,  G06F1/3203 ,  G06F1/3206 ,  G06F1/3228 ,  G06F1/324 ,  G06F1/3287 ,  G06F1/3296 ,  G06F9/3869 ,  G06F9/461 ,  G06F9/5088 ,  G06F9/5094 ,  G06F12/0875 ,  G06F13/24 ,  G06F2209/5017 ,  G06F2212/452 ,  G06T1/20 ,  Y02B70/10 ,  Y02B70/1425 ,  Y02B70/30 ,  Y02B70/32 ,  Y02D10/122 ,  Y02D10/126 ,  Y02D10/172 ,  Y02D50/20

Abstract: Techniques to control power and processing among a plurality of asymmetric processing elements are disclosed. In one embodiment, one or more asymmetric processing elements are power managed to migrate processes or threads among a plurality of processing elements according to the performance and power needs of the system

公开(公告)号：US20240389300A1

公开(公告)日：2024-11-21

申请号：US18789756

申请日：2024-07-31

Applicant: Intel Corporation

Inventor： Wilfred Gomes ,  Mauro J. Kobrinsky ,  Abhishek A. Sharma ,  Rajesh Kumar ,  Kinyip Phoa ,  Elliot Tan ,  Tahir Ghani ,  Swaminathan Sivakumar

IPC: H10B12/00 ,  G11C5/06 ,  H01L23/522 ,  H01L23/528 ,  H01L27/06 ,  H01L29/786

Abstract: A three-dimensional memory array may include a first memory array and a second memory array, stacked above the first. Some memory cells of the first array may be coupled to a first layer selector transistor, while some memory cells of the second array may be coupled to a second layer selector transistor. The first and second layer selector transistor may be coupled to one another and to a peripheral circuit that controls operation of the first and/or second memory arrays. A different layer selector transistor may be used for each row of memory cells of a given memory array and/or for each column of memory cells of a given memory array. Such designs may allow increasing density of memory cells in a memory array having a given footprint area, or, conversely, reducing the footprint area of the memory array with a given memory cell density.

公开(公告)号：US12058849B2

公开(公告)日：2024-08-06

申请号：US17522225

申请日：2021-11-09

Applicant: Intel Corporation

Inventor： Wilfred Gomes ,  Kinyip Phoa ,  Mauro J. Kobrinsky ,  Tahir Ghani ,  Uygar E. Avci ,  Rajesh Kumar

IPC: H10B12/00 ,  H01L29/06 ,  H01L29/423 ,  H01L29/49 ,  H01L29/51 ,  H01L29/78 ,  H01L29/786 ,  H01L49/02

CPC classification number: H10B12/312 ,  H01L28/60 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/4908 ,  H01L29/516 ,  H01L29/78391 ,  H01L29/78618 ,  H01L29/78696

Abstract: Described herein are IC devices that include semiconductor nanoribbons stacked over one another to realize high-density three-dimensional (3D) dynamic random-access memory (DRAM). An example device includes a first semiconductor nanoribbon, a second semiconductor nanoribbon, a first source or drain (S/D) region and a second S/D region in each of the first and second nanoribbons, a first gate stack at least partially surrounding a portion of the first nanoribbon between the first and second S/D regions in the first nanoribbon, and a second gate stack, not electrically coupled to the first gate stack, at least partially surrounding a portion of the second nanoribbon between the first and second S/D regions in the second nanoribbon. The device further includes a bitline coupled to the first S/D regions of both the first and second nanoribbons.