摘要:
A RF power amplifier module comprises a die with a RF power transistor and the RF power transistor comprises a control terminal, a transistor output terminal and a transistor reference terminal. The RF power amplifier module further comprises a module input terminal, a module output terminal and at least two module reference terminals being electrically coupled to the control terminal, the transistor output terminal and the transistor reference terminal, respectively. The RF power amplifier module further comprises an electrically isolating layer and a heat conducting element. The die is in thermal contact with the heat conducting element via the electrically isolating layer in order to transfer heat during operation of the RF power transistor to the heat conducting element.
摘要:
In a system comprising a plurality of gain elements configured in parallel to one another, a harmonically tuned filter provides an isolation circuit to prevent odd-mode differential oscillations. A harmonically tuned filter comprises resistors, inductors, and capacitors (RLC) to selectively allow one or more specific harmonics to pass through the isolation circuit to suppress the odd-mode oscillation. Direct current (DC) and other non-harmonically-related frequencies do not pass through the isolation circuit. Since the resistor is used to dissipate specifically the energy of the harmonic frequencies causing the odd-mode oscillation, the current density through the resistor is much lower than the current density of a typical odd-mode resistor without a harmonically tuned filter.
摘要:
The present invention relates to an impedance transformation circuit (I10; 11a; 11b; 12) with a first contact pad (51) and a second contact pad (52) being spaced-apart and formed on a substrate (20). The impedance transformation circuit comprises at least first circuit element (40) providing a contact area (41) formed on the substrate (20) which is arranged adjacent and between the first (51) and the second (52) contact pad. A first wire element (31) extends over the substrate (20) connecting the first contact pad (51) and a first end portion (41a) of the contact area of the first circuit element (40), whilst at least a second wire element (32) extends over the substrate (20) connecting the second contact pad (52) and a second end portion (41b) of the contact area of the first circuit element (40). The contact area of the first circuit element (40) is shaped such that it is provided a capacitive connection with a predetermined capacitance between the contact area and a fixed reference poteitial. The packing density of the whole circuit can advantageously be increased by having tibe first wire element (31) and the at least second wire element (32) the same shape and having them arranged substantially in parallel to each other and further, by having the first contact's pad (51) and the second contact pad (52) located at opposite sides of the contact area of the at least first circuit element (40). Multiple impedance transformation circuits according to the invention can advantageously combined to a multi-coupled wire impedance transformation circuit (12).
摘要:
A high power Doherty amplifier circuit having at least one input terminal and at least one output terminal comprising at least one carrier transistor (30) forming a main amplifier stage; at least one peak transistor (32) forming a peak amplifier stage; a first input line (27) connecting the input terminal (28) to an input (29) of the carrier transistor (30); a second input line (31) connecting the input terminal (28) to an input (63) of the peak transistor (32); a first output line (33) connecting the output terminal (56) to an output (49) of the carrier transistor (30); and a second output line (35) connecting the output terminal (56) to an output (75) of the peak transistor (32). A high power Doherty amplifier circuit package comprising a support structure (104) supporting circuit elements of the Doherty amplifier circuit; at least one input terminal (102) and at least one output terminal (96) both terminals being supported on the support structure (104); at least one carrier transistor (92) forming a main amplifier stage and at least one peak transistor (98) forming a peak amplifier stage both transistors being supported on the support structure (104); a first input network (106) connecting the input terminal (102) to an input of the carrier transistor (92); a second input network (100, 114, 116) connecting the input terminal (102) to an input of the peak transistor (98); a first output network (94, 108, 110) connecting the output terminal (96) to an output of the carrier transistor (92); and a second output network (112) connecting the output terminal (96) to an output of the peak transistor (98), and wherein the input and output networks are artificial transmission lines comprising serial circuits and/or parallel circuits of at least one capacitance and/or at least one inductance.
摘要:
A radio frequency power amplifier comprises an input and output terminals, a main and peak amplifier stages, and an output power combiner for combining a main output signal and a peak output signal into an output signal. The output power combiner comprises a first combiner terminal electrically coupled to a main output terminal, a second combiner terminal electrically coupled to a peak output terminal, a first transition structure extending from the first combiner terminal in a first direction to a first end, a second transition structure extending from the second combiner terminal in the first direction to a second end, a first electrical conductor arranged between the first and the second ends, and a second electrical conductor arranged between the second combiner terminal and the output terminal. The first electrical conductor extends in a second direction perpendicular to the first direction. The second electrical conductor extends in the first direction.
摘要:
The present invention relates to an impedance transformation circuit (I10; 11 a; 11 b; 12) with a first contact pad (51) and a second contact pad (52) being spaced-apart and formed on a substrate (20). The impedance transformation circuit comprises at least first circuit element (40) providing a contact area (41) formed on the substrate (20) which is arranged adjacent and between the first (51) and the second (52) contact pad. A first ‘wire element (31) extends over the substrate (20) connecting the first contact pad (51) and a first end portion (41 a) of the contact area of the first circuit element (40), whilst at least a second wire element (32) extends over the substrate (20) connecting the second contact pad (52) and a second end portion (41b) of the contact area of the first circuit element (40). The contact area of the first circuit element (40) is shaped such that it is provided a capacitive connection with a predetermined capacitance between the contact area and a fixed reference poteitial. The packing density of the whole circuit can advantageously be increased by having tibe first wire element (31) and the at least second wire element (32) the same shape and having them arranged substantially in parallel to each other and further, by having the first contact's pad (51) and the second contact pad (52) located at opposite sides of the contact area of the at least first circuit element (40). Multiple impedance transformation circuits according to the invention can advantageously combined to a multi-coupled wire impedance transformation circuit (12).
摘要:
An output circuit for a semiconductor amplifier element having an output capacitance (20, 42) that is to be cancelled by a first LC circuit having a first inductance (22, 44) and a first capacitance (24, 46), said output circuit comprising an additional inductance circuit with an additional inductance (30, 52) and an additional capacitance (32, 54), said first inductance circuit and said additional inductance circuit compensating for the output capacitance (20, 42) of the semiconductor amplifier element, while the first inductance (22, 44) and the first capacitance (24, 46) cancel out the second harmonics within the output signal of the semiconductor amplifier element.
摘要:
An RF power amplifier circuit has an input terminal for receiving an input signal having an input power, and an output terminal for outputting an output signal. The RF power amplifier circuit comprises three amplifier stages and an input power splitter for providing respective power fraction signals to respective inputs of each amplifier stage. The input power splitter comprises a first input transmission line arranged between a first node and a second node, a second input transmission line arranged between a third node and a fourth node, and an electrical reactive element having a first terminal electrically connected to both the first and the second nodes, and a second terminal electrically coupled to a third one of the respective three inputs.
摘要:
In a system comprising a plurality of gain elements configured in parallel to one another, a harmonically tuned filter provides an isolation circuit to prevent odd-mode differential oscillations. A harmonically tuned filter comprises resistors, inductors, and capacitors (RLC) to selectively allow one or more specific harmonics to pass through the isolation circuit to suppress the odd-mode oscillation. Direct current (DC) and other non-harmonically-related frequencies do not pass through the isolation circuit. Since the resistor is used to dissipate specifically the energy of the harmonic frequencies causing the odd-mode oscillation, the current density through the resistor is much lower than the current density of a typical odd-mode resistor without a harmonically tuned filter.
摘要:
A method for a predistortion linearization of a branched signal for a RF amplifier, comprising supplying a branched signal to at least one input terminal (2); distributing power of the input signal present on at least one input terminal (2) to a plurality of parallel branch-circuits (16, 18, 20) as a branched signals by a power distributing circuit (4); controlling a phase parameter and an amplitude parameter of the branched signals by at least one nonlinear branch-circuit (18, 20); controlling a phase parameter and an amplitude parameter of the branched signals by at least one linear branch-circuit (16); combining output branched signals of at least one nonlinear branch circuit (18, 20) with the output branched signals of at least one linear branch circuit (16) by a power combining circuit (12); providing an output branched signal of the power combining circuit (12) on at least one output terminal (14). Furthermore, a circuit for a predistortion unit linearizing a signal for a RF amplifier and a layout of a predistortion linearization of a signal for a RF amplifier are disclosed.