摘要:
A package substrate may include an insulating substrate, a circuit pattern and a mold gate pattern. The insulating pattern may have a mold gate region through which a molding member may pass. The circuit pattern may be formed on the insulating substrate. The mold gate pattern may be formed on the mold gate region of the insulating substrate. The mold gate pattern may include a polymer having relatively strong adhesion strength with respect to the insulating substrate and relatively weak adhesion strength with respect to the molding member. Thus, costs of the package substrate and the semiconductor package may be decreased.
摘要:
The stack package includes a first semiconductor package and a second semiconductor package. The first semiconductor package includes a first substrate having a first modulus and at least one semiconductor chip mounted on the first substrate. The second semiconductor package stacked on the first semiconductor package and includes a second substrate having a second modulus and at least one semiconductor chip mounted on the second substrate. The second modulus is less than the first modulus. Even in the event that the first semiconductor package is under severe warpage due to a temperature change, the flexible second substrate, which includes e.g., polyimide or poly ethylene terephthalate, of the second semiconductor package may be less sensitive to the temperature change, thereby improving reliability of the stack package.
摘要:
A plasma generation apparatus includes: a chamber having a chamber lid and defining an airtight reaction region; a susceptor in the chamber; a gas supply means supplying a process gas to the chamber; and a toroidal core vertically disposed with respect to the susceptor through the chamber lid, comprising: a toroidal ferromagnetic core combined with the chamber, the toroidal ferromagnetic core having a first portion outside the chamber and a second portion inside the chamber, the second portion having an opening portion; a radio frequency (RF) power supply connected to the chamber; an induction coil electrically connected to the RF power supply, the induction coil rolling the first portion; and a matching circuit matching an impedance between the RF power supply and the induction coil.
摘要:
A hybrid coupled plasma type apparatus includes: a chamber having a gas-injecting unit; an electrostatic chuck in the chamber; an insulating plate over the gas-injecting unit; a high frequency generator; an impedance matching circuit connected to the high frequency generator; first and second antennas connected to the impedance matching circuit in parallel, a power of the high frequency generator being supplied to the first and second antennas; an electrode of a plate shape connected to one of the first and second antennas in serial, the power of the high frequency generator being supplied to the electrode; and a power distributor between the high frequency generator and one of the first and second antennas.
摘要:
A hybrid coupled plasma type apparatus includes: a chamber having a gas-injecting unit; an electrostatic chuck in the chamber; an insulating plate over the gas-injecting unit; a high frequency generator; an impedance matching circuit connected to the high frequency generator; first and second antennas connected to the impedance matching circuit in parallel, a power of the high frequency generator being supplied to the first and second antennas; an electrode of a plate shape connected to one of the first and second antennas in serial, the power of the high frequency generator being supplied to the electrode; and a power distributor between the high frequency generator and one of the first and second antennas.
摘要:
A plasma generation apparatus includes: a chamber having a chamber lid and defining an airtight reaction region; a susceptor in the chamber; a gas supplier supplying a process gas to the chamber; and a toroidal core vertically disposed with respect to the susceptor through the chamber lid, including: a toroidal ferromagnetic core combined with the chamber, the toroidal ferromagnetic core having a first portion outside the chamber and a second portion inside the chamber, the second portion having an opening portion; a radio frequency (RF) power supply connected to the chamber; an induction coil electrically connected to the RF power supply, the induction coil rolling the first portion; and a matching circuit matching an impedance between the RF power supply and the induction coil.
摘要:
The flip chip package includes a semiconductor chip electrically connected to a circuit substrate. A protective cap is disposed over the semiconductor chip, and includes at least one portion extending beyond an edge of the semiconductor chip.
摘要:
The invention relates to an antenna device of a low impedance for generating a large quantity of inductively coupled plasma to process a large size of a specimen with adjustment for a uniform distribution in the density of plasma, comprising: a high frequency power source; a first antenna for receiving the high frequency power supplied from the high frequency power source; and a second antenna connected in parallel with the first antenna for receiving the high frequency power supplied from the high frequency power source, wherein a resonant state is kept between the first and second antennas.
摘要:
A plasma generation apparatus includes: a chamber having a chamber lid and defining an airtight reaction region; a susceptor in the chamber; a gas supply means supplying a process gas to the chamber; and a toroidal core vertically disposed with respect to the susceptor through the chamber lid, comprising: a toroidal ferromagnetic core combined with the chamber, the toroidal ferromagnetic core having a first portion outside the chamber and a second portion inside the chamber, the second portion having an opening portion; a radio frequency (RF) power supply connected to the chamber; an induction coil electrically connected to the RF power supply, the induction coil rolling the first portion; and a matching circuit matching an impedance between the RF power supply and the induction coil.
摘要:
An inductively coupled plasma generator having a lower aspect ratio reaction gas, comprising a chamber having a gas inlet through which a reaction gas is supplied, a vacuum pump for maintaining the inside of the chamber vacuum and a gas outlet for exhausting the reaction gas after completion of the reaction, a chuck for mounting a target material to be processed inside the chamber, and an antenna to which high-frequency power is applied, the antenna provided at the upper and lateral portions of the chamber, wherein the antenna has parallel antenna elements in which a discharge of a high frequency can be allowed and impedance is low to ensure a low electron temperature, the antenna is disposed such that a powered end of each of the antenna elements and a ground end of each of the antenna elements opposite to the powered end are symmetrical in view of the center of an imaginary circle formed by the antenna to establish rotation symmetry of plasma density profiles, the antenna elements are twisted in a helical manner, and the powered end of each of the antenna elements is positioned to be far from the chamber and the ground end of each of the antenna elements is positioned to be close to the chamber, thereby compensating for a drop in the plasma density due to ion loss occurring at the powered end.