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公开(公告)号：US11056532B2
公开(公告)日：2021-07-06
申请号：US16304965
申请日：2016-07-01
申请人： INTEL CORPORATION
发明人： Han Wui Then , Marko Radosavljevic , Sansaptak Dasgupta , Paul B. Fischer , Sanaz K. Gardner , Bruce A. Block
IPC分类号： H01L27/20 , H01L21/02 , H01L29/04 , H01L29/08 , H01L29/20 , H01L29/205 , H01L29/417 , H01L29/66 , H01L29/778 , H01L41/047 , H01L41/08 , H01L41/187 , H01L41/29 , H01L41/314 , H03H3/02 , H03H9/02 , H03H9/05 , H03H9/17 , H03H9/54 , H03H9/56
摘要： Techniques are disclosed for monolithic co-integration of thin-film bulk acoustic resonator (TFBAR, also called FBAR) devices and III-N semiconductor transistor devices. In accordance with some embodiments, one or more TFBAR devices including a polycrystalline layer of a piezoelectric III-N semiconductor material may be formed alongside one or more III-N semiconductor transistor devices including a monocrystalline layer of III-N semiconductor material, over a commonly shared semiconductor substrate. In some embodiments, either (or both) the monocrystalline and the polycrystalline layers may include gallium nitride (GaN), for example. In accordance with some embodiments, the monocrystalline and polycrystalline layers may be formed simultaneously over the shared substrate, for instance, via an epitaxial or other suitable process. This simultaneous formation may simplify the overall fabrication process, realizing cost and time savings, at least in some instances.
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公开(公告)号：US10804879B2
公开(公告)日：2020-10-13
申请号：US16327712
申请日：2016-09-30
申请人： INTEL CORPORATION
摘要： Techniques are disclosed for forming high frequency film bulk acoustic resonator (FBAR) devices having multiple resonator thicknesses on a common substrate. A piezoelectric stack is formed in an STI trench and overgrown onto the STI material. In some cases, the piezoelectric stack can include epitaxially grown AlN. In some cases, the piezoelectric stack can include single crystal (epitaxial) AlN in combination with polycrystalline (e.g., sputtered) AlN. The piezoelectric stack thus forms a central portion having a first resonator thickness and end wings extending from the central portion having a different resonator thickness. Each wing may also have different thicknesses. Thus, multiple resonator thicknesses can be achieved on a common substrate, and hence, multiple resonant frequencies on that same substrate. The end wings can have metal electrodes formed thereon, and the central portion can have a plurality of IDT electrodes patterned thereon.
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公开(公告)号：US20190199322A1
公开(公告)日：2019-06-27
申请号：US16328753
申请日：2016-09-30
申请人： INTEL CORPORATION
IPC分类号： H03H9/17 , H03H9/56 , H03H9/54 , H03H9/02 , H03H9/13 , H03H3/02 , H01L41/297 , H01L41/316 , H01L27/20 , H01L41/047 , H01L41/187 , H01L41/08 , H01L41/083
CPC分类号： H03H9/173 , H01L27/20 , H01L41/0471 , H01L41/0477 , H01L41/081 , H01L41/083 , H01L41/187 , H01L41/297 , H01L41/316 , H03H3/02 , H03H9/02015 , H03H9/133 , H03H9/545 , H03H9/564 , H03H9/587 , H03H2003/021
摘要： Techniques are disclosed for forming high frequency film bulk acoustic resonator (FBAR) devices that include a bottom electrode formed of a two-dimensional electron gas (2DEG). The disclosed FBAR devices may be implemented with various group III-nitride (III-N) materials, and in some cases, the 2DEG may be formed at a heterojunction of two epitaxial layers each formed of III-N materials, such as a gallium nitride (GaN) layer and an aluminum nitride (AlN) layer. The 2DEG bottom electrode may be able to achieve similar or increased carrier transport as compared to an FBAR device having a bottom electrode formed of metal. Additionally, in some embodiments where AlN is used as the piezoelectric material for the FBAR device, the AlN may be epitaxially grown which may provide increased performance as compared to piezoelectric material that is deposited by traditional sputtering techniques.
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公开(公告)号：US20190199312A1
公开(公告)日：2019-06-27
申请号：US16328770
申请日：2016-09-30
申请人： INTEL CORPORATION
CPC分类号： H03H3/02 , H03H9/02015 , H03H9/587 , H03H9/589 , H03H2003/021 , H03H2003/025
摘要： Techniques are disclosed for forming integrated circuit single-flipped resonator devices that include an electrode formed of a two-dimensional electron gas (2 DEG). The disclosed resonator devices may be implemented with various group III-nitride (III-N) materials, and in some cases, the 2 DEG may be formed at a heterojunction of two epitaxial layers each formed of III-N materials, such as a gallium nitride (GaN) layer and an aluminum nitride (AlN) layer. The 2 DEG electrode may be able to achieve similar or increased carrier transport as compared to a resonator device having an electrode formed of metal. Additionally, in some embodiments where AlN is used as the piezoelectric material for the resonator device, the AlN may be epitaxially grown which may provide increased performance as compared to piezoelectric material that is deposited by traditional sputtering techniques.
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公开(公告)号：US11558032B2
公开(公告)日：2023-01-17
申请号：US16327720
申请日：2016-09-30
申请人： INTEL CORPORATION
IPC分类号： H03H9/05 , H03H9/13 , H03H9/205 , H03H3/02 , H03H9/17 , H03H9/02 , H03H9/64 , H03H9/58 , H03H3/007
摘要： A bulk acoustic resonator architecture is fabricated by epitaxially forming a piezoelectric film on a top surface of post formed from an underlying substrate. In some cases, the acoustic resonator is fabricated to filter multiple frequencies. In some such cases, the resonator device includes two different resonator structures on a single substrate, each resonator structure configured to filter a desired frequency. Including two different acoustic resonators in a single RF acoustic resonator device enables that single device to filter two different frequencies in a relatively small footprint.
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公开(公告)号：US11218133B2
公开(公告)日：2022-01-04
申请号：US16327705
申请日：2016-09-30
申请人： INTEL CORPORATION
摘要： Techniques are disclosed for forming integrated circuit film bulk acoustic resonator (FBAR) devices having multiple resonator thicknesses on a common substrate. A piezoelectric stack is formed in an STI trench and overgrown onto the STI material. In some cases, the piezoelectric stack can include epitaxially grown AlN. In some cases, the piezoelectric stack can include single crystal (epitaxial) AlN in combination with polycrystalline (e.g., sputtered) AlN. The piezoelectric stack thus forms a central portion having a first resonator thickness and end wings extending from the central portion and having a different resonator thickness. Each wing may also have different thicknesses from one another. Thus, multiple resonator thicknesses can be achieved on a common substrate, and hence, multiple resonant frequencies on that same substrate. The end wings can have metal electrodes formed thereon, and the central portion can have a plurality of IDT electrodes patterned thereon.
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公开(公告)号：US10979012B2
公开(公告)日：2021-04-13
申请号：US16328770
申请日：2016-09-30
申请人： INTEL CORPORATION
摘要： Techniques are disclosed for forming integrated circuit single-flipped resonator devices that include an electrode formed of a two-dimensional electron gas (2DEG). The disclosed resonator devices may be implemented with various group III-nitride (III-N) materials, and in some cases, the 2DEG may be formed at a heterojunction of two epitaxial layers each formed of III-N materials, such as a gallium nitride (GaN) layer and an aluminum nitride (AlN) layer. The 2DEG electrode may be able to achieve similar or increased carrier transport as compared to a resonator device having an electrode formed of metal. Additionally, in some embodiments where AlN is used as the piezoelectric material for the resonator device, the AlN may be epitaxially grown which may provide increased performance as compared to piezoelectric material that is deposited by traditional sputtering techniques.
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公开(公告)号：US10790332B2
公开(公告)日：2020-09-29
申请号：US15778603
申请日：2015-12-24
申请人： Intel Corporation
发明人： Bruce A. Block , Paul B. Fischer , Nebil Tanzi , Gregory Chance , Han Wui Then , Sansaptak Dasgupta , Marko Radosavljevic
IPC分类号： H01L21/50 , H01L27/20 , H01L23/00 , H01L23/48 , H01L23/66 , H03H3/007 , H03H9/05 , H01L29/20 , H01L29/66 , H01L29/778 , H03H3/02 , H03H9/17 , H03H9/56 , H03H9/15
摘要： Techniques to fabricate an RF filter using 3 dimensional island integration are described. A donor wafer assembly may have a substrate with a first and second side. A first side of a resonator layer, which may include a plurality of resonator circuits, may be coupled to the first side of the substrate. A weak adhesive layer may be coupled to the second side of the resonator layer, followed by a low-temperature oxide layer and a carrier wafer. A cavity in the first side of the resonator layer may expose an electrode of the first resonator circuit. An RF assembly may have an RF wafer having a first and a second side, where the first side may have an oxide mesa coupled to an oxide layer. A first resonator circuit may be then coupled to the oxide mesa of the first side of the RF wafer.
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公开(公告)号：US20170131469A1
公开(公告)日：2017-05-11
申请号：US15352520
申请日：2016-11-15
申请人： Intel Corporation
发明人： Mauro J. Kobrinsky , Henning Braunisch , Shawna M. Liff , Peter L. Chang , Bruce A. Block , Johanna M. Swan
CPC分类号： G02B6/12004 , G02B6/12 , G02B6/30 , G02B6/4214 , G02B6/4257 , G02B6/428 , G02B2006/12061 , G02B2006/12121 , G02B2006/12123 , H01L21/563 , H01L23/49827 , H01L23/49838 , H01L24/13 , H01L24/16 , H01L24/17 , H01L24/81 , H01L24/83 , H01L24/92 , H01L25/167 , H01L2224/13025 , H01L2224/13082 , H01L2224/131 , H01L2224/13147 , H01L2224/16145 , H01L2224/16146 , H01L2224/16225 , H01L2224/16227 , H01L2224/17181 , H01L2224/81011 , H01L2224/81024 , H01L2224/81191 , H01L2224/81203 , H01L2224/81815 , H01L2224/83048 , H01L2224/83102 , H01L2224/83986 , H01L2224/92125 , H01L2924/12042 , H01L2924/12043 , H01L2924/1431 , H01L2924/1432 , H01L2924/15311 , H01L2924/15312 , H04B10/25 , H04B10/40 , H04B10/801 , H01L2924/00014 , H01L2924/014
摘要： Photonic components are placed on the processor package to bring the optical signal close to the processor die. The processor package includes a substrate to which the processor die is coupled, and which allows the processor die to connect to a printed circuit board. The processor package also includes transceiver logic, electrical-optical conversion circuits, and an optical coupler. The electrical-optical conversion circuits can include laser(s), modulator(s), and photodetector(s) to transmit and receive and optical signal. The coupler interfaces to a fiber that extends off the processor package. Multiple fibers can be brought to the processor package allowing for a scalable high-speed, high-bandwidth interconnection to the processor.
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公开(公告)号：US11671075B2
公开(公告)日：2023-06-06
申请号：US16998389
申请日：2020-08-20
申请人： INTEL CORPORATION
CPC分类号： H03H9/205 , H03H9/02007 , H03H9/02543 , H03H9/02574 , H03H9/13 , H03H9/15 , H03H9/172 , H03H2009/02173
摘要： Techniques are disclosed for forming high frequency film bulk acoustic resonator (FBAR) devices having multiple resonator thicknesses on a common substrate. A piezoelectric stack is formed in an STI trench and overgrown onto the STI material. In some cases, the piezoelectric stack can include epitaxially grown AlN. In some cases, the piezoelectric stack can include single crystal (epitaxial) AlN in combination with polycrystalline (e.g., sputtered) AlN. The piezoelectric stack thus forms a central portion having a first resonator thickness and end wings extending from the central portion having a different resonator thickness. Each wing may also have different thicknesses. Thus, multiple resonator thicknesses can be achieved on a common substrate, and hence, multiple resonant frequencies on that same substrate. The end wings can have metal electrodes formed thereon, and the central portion can have a plurality of IDT electrodes patterned thereon.
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