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公开(公告)号:US20150163904A1
公开(公告)日:2015-06-11
申请号:US14102757
申请日:2013-12-11
申请人: Intel Corporation
发明人: Omkar G. Karhade , John S. Guzek , Johanna M. Swan , Christopher J. Nelson , Nitin A. Deshpande , William J. Lambert , Charles A. Gealer , Feras Eid , Islam A. Salama , Kemal Aygun , Sasha N. Oster , Tyler N. Osborn
CPC分类号: H01L25/16 , H01L23/5383 , H01L23/5386 , H01L23/5387 , H01L24/50 , H01L24/86 , H01L25/00 , H01L25/0655 , H01L2224/0405 , H01L2224/04105 , H01L2224/05568 , H01L2224/056 , H01L2224/05647 , H01L2224/29078 , H01L2224/86203 , H01L2224/86815 , H05K1/185 , Y10T29/49155 , H01L2924/00014 , H01L2924/014
摘要: A microelectronic package of the present description may comprises a first microelectronic device having at least one row of connection structures electrically connected thereto and a second microelectronic device having at least one row of connection structures electrically connected thereto, wherein the connection structures within the at least one first microelectronic device row are aligned with corresponding connection structures within the at least one second microelectronic device row in an x-direction. An interconnect comprising an interconnect substrate having a plurality of electrically isolated conductive traces extending in the x-direction on a first surface of the interconnect substrate may be attached to the at least one first microelectronic device connection structure row and the at least one second microelectronic device connection structure row, such that at least one interconnect conductive trace forms a connection between a first microelectronic device connection structure and its corresponding second microelectronic device connection structure.
摘要翻译: 本说明书的微电子封装可以包括具有与其电连接的至少一行连接结构的第一微电子器件和具有与其电连接的至少一排连接结构的第二微电子器件,其中所述至少一个 第一微电子器件行与X方向上的至少一个第二微电子器件行内的对应连接结构对准。 包括具有在互连衬底的第一表面上沿x方向延伸的多个电隔离导电迹线的互连衬底的互连可以附接到所述至少一个第一微电子器件连接结构行和所述至少一个第二微电子器件 连接结构行,使得至少一个互连导电迹线形成第一微电子器件连接结构与其对应的第二微电子器件连接结构之间的连接。
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公开(公告)号:US11217516B2
公开(公告)日:2022-01-04
申请号:US16231238
申请日:2018-12-21
申请人: INTEL CORPORATION
IPC分类号: H01L23/498 , H01L23/31 , H01L23/00 , H01L25/065 , H01L25/10 , H01L25/18 , H01L25/00 , H01L25/16
摘要: A stacked-chip apparatus includes a package substrate and an interposer with a chip stack disposed with a standoff that matches the interposer. A package-on-package stacked-chip apparatus includes a top package disposed on the interposer.
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3.
公开(公告)号:US10555417B2
公开(公告)日:2020-02-04
申请号:US16281045
申请日:2019-02-20
申请人: Intel Corporation
发明人: Damion Searls , Weston C. Roth , Margaret D. Ramirez , James D. Jackson , Rainer E. Thomas , Charles A. Gealer
IPC分类号: H01L21/56 , H01L23/48 , H05K7/00 , H05K1/18 , H01L23/498 , H01L25/03 , H01L23/552 , H01L23/00 , H05K3/28
摘要: Disclosed are embodiments of a system-level assembly including an integrated circuit (IC) die directly attached to a mainboard. An IC die directly attached to a mainboard or other circuit board may be referred to as a direct-chip attach (DCA) die. A package is disposed over at least a portion of the DCA die and coupled with the mainboard. The package includes one or more other IC die disposed on a substrate. Other embodiments are described and claimed.
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公开(公告)号:US09397071B2
公开(公告)日:2016-07-19
申请号:US14102757
申请日:2013-12-11
申请人: Intel Corporation
发明人: Omkar G. Karhade , John S. Guzek , Johanna M. Swan , Christopher J. Nelson , Nitin A. Deshpande , William J. Lambert , Charles A. Gealer , Feras Eid , Islam A. Salama , Kemal Aygun , Sasha N. Oster , Tyler N. Osborn
IPC分类号: H05K7/00 , H01L25/00 , H01L23/00 , H01L25/065 , H01L23/538 , H05K1/18
CPC分类号: H01L25/16 , H01L23/5383 , H01L23/5386 , H01L23/5387 , H01L24/50 , H01L24/86 , H01L25/00 , H01L25/0655 , H01L2224/0405 , H01L2224/04105 , H01L2224/05568 , H01L2224/056 , H01L2224/05647 , H01L2224/29078 , H01L2224/86203 , H01L2224/86815 , H05K1/185 , Y10T29/49155 , H01L2924/00014 , H01L2924/014
摘要: A microelectronic package of the present description may comprises a first microelectronic device having at least one row of connection structures electrically connected thereto and a second microelectronic device having at least one row of connection structures electrically connected thereto, wherein the connection structures within the at least one first microelectronic device row are aligned with corresponding connection structures within the at least one second microelectronic device row in an x-direction. An interconnect comprising an interconnect substrate having a plurality of electrically isolated conductive traces extending in the x-direction on a first surface of the interconnect substrate may be attached to the at least one first microelectronic device connection structure row and the at least one second microelectronic device connection structure row, such that at least one interconnect conductive trace forms a connection between a first microelectronic device connection structure and its corresponding second microelectronic device connection structure.
摘要翻译: 本说明书的微电子封装可以包括具有与其电连接的至少一行连接结构的第一微电子器件和具有与其电连接的至少一排连接结构的第二微电子器件,其中所述至少一个 第一微电子器件行与X方向上的至少一个第二微电子器件行内的对应连接结构对准。 包括具有在互连衬底的第一表面上沿x方向延伸的多个电隔离导电迹线的互连衬底的互连可以附接到所述至少一个第一微电子器件连接结构行和所述至少一个第二微电子器件 连接结构行,使得至少一个互连导电迹线形成第一微电子器件连接结构与其对应的第二微电子器件连接结构之间的连接。
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公开(公告)号:US09842832B2
公开(公告)日:2017-12-12
申请号:US15183179
申请日:2016-06-15
申请人: Intel Corporation
发明人: Omkar G. Karhade , John S. Guzek , Johanna M. Swan , Christopher J. Nelson , Nitin A. Deshpande , William J. Lambert , Charles A. Gealer , Feras Eid , Islam A. Salama , Kemal Aygun , Sasha N. Oster , Tyler N. Osborn
IPC分类号: H01L25/16 , H01L23/538 , H01L25/065 , H01L23/00 , H01L25/00 , H05K1/18
CPC分类号: H01L25/16 , H01L23/5383 , H01L23/5386 , H01L23/5387 , H01L24/50 , H01L24/86 , H01L25/00 , H01L25/0655 , H01L2224/0405 , H01L2224/04105 , H01L2224/05568 , H01L2224/056 , H01L2224/05647 , H01L2224/29078 , H01L2224/86203 , H01L2224/86815 , H05K1/185 , Y10T29/49155 , H01L2924/00014 , H01L2924/014
摘要: A microelectronic package of the present description may comprises a first microelectronic device having at least one row of connection structures electrically connected thereto and a second microelectronic device having at least one row of connection structures electrically connected thereto, wherein the connection structures within the at least one first microelectronic device row are aligned with corresponding connection structures within the at least one second microelectronic device row in an x-direction. An interconnect comprising an interconnect substrate having a plurality of electrically isolated conductive traces extending in the x-direction on a first surface of the interconnect substrate may be attached to the at least one first microelectronic device connection structure row and the at least one second microelectronic device connection structure row, such that at least one interconnect conductive trace forms a connection between a first microelectronic device connection structure and its corresponding second microelectronic device connection structure.
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公开(公告)号:US09617148B2
公开(公告)日:2017-04-11
申请号:US15176467
申请日:2016-06-08
申请人: Intel Corporation
发明人: Qing Ma , Johanna M. Swan , Min Tao , Charles A. Gealer , Edward T. Zarbock
IPC分类号: H01L21/00 , B81C1/00 , H01L23/48 , H01L23/00 , G01P15/08 , B81B7/00 , H01L25/065 , H01L23/498 , H01L23/538
CPC分类号: B81C1/00301 , B81B7/007 , B81C1/00238 , B81C2203/0145 , G01P15/0802 , H01L23/481 , H01L23/49816 , H01L23/5384 , H01L24/03 , H01L25/0652 , H01L2224/0401 , H01L2224/131 , H01L2224/16225 , H01L2224/16227 , H01L2224/73204 , H01L2924/01327 , H01L2924/07811 , H01L2924/12042 , H01L2924/1461 , H01L2924/00 , H01L2924/014
摘要: Integration of sensor chips with integrated circuit (IC) chips. At least a first sensor chip including a first sensor is affixed to a first side of an interposer to hermetically seal the first sensor within a first cavity. An IC chip is affixed to a second side of the interposer opposite the first sensor, the IC chip is electrically coupled to the first sensor by a through via in the interposer. In embodiments, the first sensor includes a MEMS device and the IC chip comprises a circuit to amplify a signal from the MEMS device. The interposer may be made of glass, with the first sensor chip and the IC chip flip-chip bonded to the interposer by compression or solder. Lateral interconnect traces provide I/O between the devices on the interposer and/or a PCB upon which the interpose is affixed.
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公开(公告)号:US20160300824A1
公开(公告)日:2016-10-13
申请号:US15183179
申请日:2016-06-15
申请人: Intel Corporation
发明人: Omkar G. Karhade , John S. Guzek , Johanna M. Swan , Christopher J. Nelson , Nitin A. Deshpande , William J. Lambert , Charles A. Gealer , Feras Eid , Islam A. Salama , Kemal Aygun , Sasha N. Oster , Tyler N. Osborn
IPC分类号: H01L25/16 , H01L23/538 , H01L23/00 , H01L25/065
CPC分类号: H01L25/16 , H01L23/5383 , H01L23/5386 , H01L23/5387 , H01L24/50 , H01L24/86 , H01L25/00 , H01L25/0655 , H01L2224/0405 , H01L2224/04105 , H01L2224/05568 , H01L2224/056 , H01L2224/05647 , H01L2224/29078 , H01L2224/86203 , H01L2224/86815 , H05K1/185 , Y10T29/49155 , H01L2924/00014 , H01L2924/014
摘要: A microelectronic package of the present description may comprises a first microelectronic device having at least one row of connection structures electrically connected thereto and a second microelectronic device having at least one row of connection structures electrically connected thereto, wherein the connection structures within the at least one first microelectronic device row are aligned with corresponding connection structures within the at least one second microelectronic device row in an x-direction. An interconnect comprising an interconnect substrate having a plurality of electrically isolated conductive traces extending in the x-direction on a first surface of the interconnect substrate may be attached to the at least one first microelectronic device connection structure row and the at least one second microelectronic device connection structure row, such that at least one interconnect conductive trace forms a connection between a first microelectronic device connection structure and its corresponding second microelectronic device connection structure.
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公开(公告)号:US20160043056A1
公开(公告)日:2016-02-11
申请号:US14886452
申请日:2015-10-19
申请人: INTEL CORPORATION
发明人: Chia-Pin Chiu , Qing Ma , Robert L. Sankman , Paul B. Fischer , Patrick Morrow , William J. Lambert , Charles A. Gealer , Tyler Osborn
IPC分类号: H01L25/065 , H01L23/31 , H01L23/15 , H01L23/538
CPC分类号: H01L25/0655 , H01L21/4803 , H01L21/561 , H01L21/568 , H01L23/15 , H01L23/3121 , H01L23/5384 , H01L23/5386 , H01L23/5389 , H01L24/19 , H01L24/97 , H01L2224/04105 , H01L2224/12105 , H01L2224/16225 , H01L2224/24137 , H01L2224/2499 , H01L2224/32225 , H01L2224/73204 , H01L2924/12042 , H01L2924/181 , H01L2924/00
摘要: A die assembly formed on a thin dielectric sheet is described. In one example, a first and a second die have interconnect areas. A dielectric sheet is over the interconnect areas of the first and the second die. Conductive vias in the dielectric sheet connect with pads of the interconnect areas. A build-up layer over the dielectric sheet includes routing to connect pads of the first die interconnect area to pads of the second die interconnect area through the conductive vias. The dies are mounted to a package substrate through the build-up layers, and a package cover is over the dies, the dielectric sheet, and the build-up layer.
摘要翻译: 描述了形成在薄介电片上的模具组件。 在一个示例中,第一和第二管芯具有互连区域。 电介质片在第一和第二管芯的互连区域之上。 电介质片中的导电孔与连接区的焊盘相连。 电介质片上的堆积层包括通过导电通孔将第一管芯互连区的焊盘连接到第二管芯互连区的焊盘的布线。 模具通过堆积层安装到封装衬底上,并且封装盖在模具,电介质层和堆积层之上。
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