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公开(公告)号：US20150287792A1
公开(公告)日：2015-10-08
申请号：US14743218
申请日：2015-06-18
IPC分类号： H01L29/20 , H01L29/205 , H01L29/778 , H01L33/12 , H01L33/06 , H01L33/32 , H01L29/201 , H01L29/15
CPC分类号： H01L29/155 , C30B23/02 , C30B23/025 , C30B25/02 , C30B25/18 , C30B25/183 , C30B29/06 , C30B29/403 , C30B29/406 , C30B29/68 , H01L21/02381 , H01L21/02422 , H01L21/0243 , H01L21/02433 , H01L21/0245 , H01L21/02458 , H01L21/02507 , H01L21/0251 , H01L21/0254 , H01L21/02598 , H01L21/0262 , H01L29/04 , H01L29/045 , H01L29/0649 , H01L29/2003 , H01L29/201 , H01L29/205 , H01L29/225 , H01L29/66462 , H01L29/7787 , H01L29/78 , H01L33/0066 , H01L33/007 , H01L33/0075 , H01L33/04 , H01L33/06 , H01L33/12 , H01L33/32 , Y10T428/24942 , Y10T428/26 , Y10T428/265
摘要： The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in the gallium nitride material layer which can result from differences in thermal expansion rates between the gallium nitride material and the substrate. The lowering of stresses in the gallium nitride material layer reduces the tendency of cracks to form. Thus, the invention enables the production of semiconductor materials including gallium nitride material layers having few or no cracks. The semiconductor materials may be used in a number of microelectronic and optical applications.
摘要翻译： 本发明提供了包括在硅衬底上形成的氮化镓材料层的半导体材料以及形成半导体材料的方法。 半导体材料包括在硅衬底和氮化镓材料层之间形成的过渡层。 过渡层由氮化镓材料与衬底之间的热膨胀速率差异导致的氮化镓材料层中的应力成分梯度降低。 氮化镓材料层中的应力降低降低了形成裂纹的倾向。 因此，本发明能够生产包括几乎没有或没有裂纹的氮化镓材料层的半导体材料。 半导体材料可以用于许多微电子和光学应用中。
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公开(公告)号：US20150108495A1
公开(公告)日：2015-04-23
申请号：US14579738
申请日：2014-12-22
CPC分类号： H01L29/155 , C30B23/02 , C30B23/025 , C30B25/02 , C30B25/18 , C30B25/183 , C30B29/06 , C30B29/403 , C30B29/406 , C30B29/68 , H01L21/02381 , H01L21/02422 , H01L21/0243 , H01L21/02433 , H01L21/0245 , H01L21/02458 , H01L21/02507 , H01L21/0251 , H01L21/0254 , H01L21/02598 , H01L21/0262 , H01L29/04 , H01L29/045 , H01L29/0649 , H01L29/2003 , H01L29/201 , H01L29/205 , H01L29/225 , H01L29/66462 , H01L29/7787 , H01L29/78 , H01L33/0066 , H01L33/007 , H01L33/0075 , H01L33/04 , H01L33/06 , H01L33/12 , H01L33/32 , Y10T428/24942 , Y10T428/26 , Y10T428/265
摘要： The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in the gallium nitride material layer which can result from differences in thermal expansion rates between the gallium nitride material and the substrate. The lowering of stresses in the gallium nitride material layer reduces the tendency of cracks to form. Thus, the invention enables the production of semiconductor materials including gallium nitride material layers having few or no cracks. The semiconductor materials may be used in a number of microelectronic and optical applications.
摘要翻译： 本发明提供了包括在硅衬底上形成的氮化镓材料层的半导体材料以及形成半导体材料的方法。 半导体材料包括在硅衬底和氮化镓材料层之间形成的过渡层。 过渡层由氮化镓材料与衬底之间的热膨胀速率差异导致的氮化镓材料层中的应力成分梯度降低。 氮化镓材料层中的应力降低降低了形成裂纹的倾向。 因此，本发明能够生产包括几乎没有或没有裂纹的氮化镓材料层的半导体材料。 半导体材料可以用于许多微电子和光学应用中。
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公开(公告)号：US08928035B2
公开(公告)日：2015-01-06
申请号：US14084429
申请日：2013-11-19
IPC分类号： H01L29/66 , H01L29/15 , C30B23/02 , C30B25/02 , C30B25/18 , C30B29/40 , H01L21/02 , H01L33/00 , H01L33/32 , H01L29/205 , H01L29/225 , H01L29/20
CPC分类号： H01L29/155 , C30B23/02 , C30B23/025 , C30B25/02 , C30B25/18 , C30B25/183 , C30B29/06 , C30B29/403 , C30B29/406 , C30B29/68 , H01L21/02381 , H01L21/02422 , H01L21/0243 , H01L21/02433 , H01L21/0245 , H01L21/02458 , H01L21/02507 , H01L21/0251 , H01L21/0254 , H01L21/02598 , H01L21/0262 , H01L29/04 , H01L29/045 , H01L29/0649 , H01L29/2003 , H01L29/201 , H01L29/205 , H01L29/225 , H01L29/66462 , H01L29/7787 , H01L29/78 , H01L33/0066 , H01L33/007 , H01L33/0075 , H01L33/04 , H01L33/06 , H01L33/12 , H01L33/32 , Y10T428/24942 , Y10T428/26 , Y10T428/265
摘要： The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in the gallium nitride material layer which can result from differences in thermal expansion rates between the gallium nitride material and the substrate. The lowering of stresses in the gallium nitride material layer reduces the tendency of cracks to form. Thus, the invention enables the production of semiconductor materials including gallium nitride material layers having few or no cracks. The semiconductor materials may be used in a number of microelectronic and optical applications.
摘要翻译： 本发明提供了包括在硅衬底上形成的氮化镓材料层的半导体材料以及形成半导体材料的方法。 半导体材料包括在硅衬底和氮化镓材料层之间形成的过渡层。 过渡层由氮化镓材料与衬底之间的热膨胀率差异导致的氮化镓材料层中的应力变得较低。 氮化镓材料层中的应力降低降低了形成裂纹的倾向。 因此，本发明能够生产包括几乎没有或没有裂纹的氮化镓材料层的半导体材料。 半导体材料可以用于许多微电子和光学应用中。
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公开(公告)号：US20140097446A1
公开(公告)日：2014-04-10
申请号：US14084429
申请日：2013-11-19
IPC分类号： H01L29/20
CPC分类号： H01L29/155 , C30B23/02 , C30B23/025 , C30B25/02 , C30B25/18 , C30B25/183 , C30B29/06 , C30B29/403 , C30B29/406 , C30B29/68 , H01L21/02381 , H01L21/02422 , H01L21/0243 , H01L21/02433 , H01L21/0245 , H01L21/02458 , H01L21/02507 , H01L21/0251 , H01L21/0254 , H01L21/02598 , H01L21/0262 , H01L29/04 , H01L29/045 , H01L29/0649 , H01L29/2003 , H01L29/201 , H01L29/205 , H01L29/225 , H01L29/66462 , H01L29/7787 , H01L29/78 , H01L33/0066 , H01L33/007 , H01L33/0075 , H01L33/04 , H01L33/06 , H01L33/12 , H01L33/32 , Y10T428/24942 , Y10T428/26 , Y10T428/265
摘要： The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in the gallium nitride material layer which can result from differences in thermal expansion rates between the gallium nitride material and the substrate. The lowering of stresses in the gallium nitride material layer reduces the tendency of cracks to form. Thus, the invention enables the production of semiconductor materials including gallium nitride material layers having few or no cracks. The semiconductor materials may be used in a number of microelectronic and optical applications.
摘要翻译： 本发明提供了包括在硅衬底上形成的氮化镓材料层的半导体材料以及形成半导体材料的方法。 半导体材料包括在硅衬底和氮化镓材料层之间形成的过渡层。 过渡层由氮化镓材料与衬底之间的热膨胀速率差异导致的氮化镓材料层中的应力成分梯度降低。 氮化镓材料层中的应力降低降低了形成裂纹的倾向。 因此，本发明能够生产包括几乎没有或没有裂纹的氮化镓材料层的半导体材料。 半导体材料可以用于许多微电子和光学应用中。
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公开(公告)号：US20150187880A1
公开(公告)日：2015-07-02
申请号：US14580064
申请日：2014-12-22
IPC分类号： H01L29/15 , H01L29/201 , H01L29/205 , H01L29/06 , H01L29/78 , H01L29/66 , H01L21/02 , H01L29/20 , H01L29/04
CPC分类号： H01L29/155 , C30B23/02 , C30B23/025 , C30B25/02 , C30B25/18 , C30B25/183 , C30B29/06 , C30B29/403 , C30B29/406 , C30B29/68 , H01L21/02381 , H01L21/02422 , H01L21/0243 , H01L21/02433 , H01L21/0245 , H01L21/02458 , H01L21/02507 , H01L21/0251 , H01L21/0254 , H01L21/02598 , H01L21/0262 , H01L29/04 , H01L29/045 , H01L29/0649 , H01L29/2003 , H01L29/201 , H01L29/205 , H01L29/225 , H01L29/66462 , H01L29/7787 , H01L29/78 , H01L33/0066 , H01L33/007 , H01L33/0075 , H01L33/04 , H01L33/06 , H01L33/12 , H01L33/32 , Y10T428/24942 , Y10T428/26 , Y10T428/265
摘要： The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in the gallium nitride material layer which can result from differences in thermal expansion rates between the gallium nitride material and the substrate. The lowering of stresses in the gallium nitride material layer reduces the tendency of cracks to form. Thus, the invention enables the production of semiconductor materials including gallium nitride material layers having few or no cracks. The semiconductor materials may be used in a number of microelectronic and optical applications.
摘要翻译： 本发明提供了包括在硅衬底上形成的氮化镓材料层的半导体材料以及形成半导体材料的方法。 半导体材料包括在硅衬底和氮化镓材料层之间形成的过渡层。 过渡层由氮化镓材料与衬底之间的热膨胀速率差异导致的氮化镓材料层中的应力成分梯度降低。 氮化镓材料层中的应力降低降低了形成裂纹的倾向。 因此，本发明能够生产包括几乎没有或没有裂纹的氮化镓材料层的半导体材料。 半导体材料可以用于许多微电子和光学应用中。
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6.发明授权公开(公告)号：US09064775B2
公开(公告)日：2015-06-23
申请号：US14452203
申请日：2014-08-05
IPC分类号： H01L29/66 , H01L29/15 , C30B23/02 , C30B25/02 , C30B25/18 , C30B29/40 , H01L21/02 , H01L33/00 , H01L33/32 , H01L29/205 , H01L29/225 , H01L29/20 , H01L33/12
CPC分类号： H01L29/155 , C30B23/02 , C30B23/025 , C30B25/02 , C30B25/18 , C30B25/183 , C30B29/06 , C30B29/403 , C30B29/406 , C30B29/68 , H01L21/02381 , H01L21/02422 , H01L21/0243 , H01L21/02433 , H01L21/0245 , H01L21/02458 , H01L21/02507 , H01L21/0251 , H01L21/0254 , H01L21/02598 , H01L21/0262 , H01L29/04 , H01L29/045 , H01L29/0649 , H01L29/2003 , H01L29/201 , H01L29/205 , H01L29/225 , H01L29/66462 , H01L29/7787 , H01L29/78 , H01L33/0066 , H01L33/007 , H01L33/0075 , H01L33/04 , H01L33/06 , H01L33/12 , H01L33/32 , Y10T428/24942 , Y10T428/26 , Y10T428/265
摘要： The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in the gallium nitride material layer which can result from differences in thermal expansion rates between the gallium nitride material and the substrate. The lowering of stresses in the gallium nitride material layer reduces the tendency of cracks to form. Thus, the invention enables the production of semiconductor materials including gallium nitride material layers having few or no cracks. The semiconductor materials may be used in a number of microelectronic and optical applications.
摘要翻译： 本发明提供了包括在硅衬底上形成的氮化镓材料层的半导体材料以及形成半导体材料的方法。 半导体材料包括在硅衬底和氮化镓材料层之间形成的过渡层。 过渡层由氮化镓材料与衬底之间的热膨胀速率差异导致的氮化镓材料层中的应力成分梯度降低。 氮化镓材料层中的应力降低降低了形成裂纹的倾向。 因此，本发明能够生产包括几乎没有或没有裂纹的氮化镓材料层的半导体材料。 半导体材料可以用于许多微电子和光学应用中。
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公开(公告)号：US08937335B2
公开(公告)日：2015-01-20
申请号：US14083923
申请日：2013-11-19
IPC分类号： H01L29/66 , H01L29/15 , C30B23/02 , C30B25/02 , C30B25/18 , C30B29/40 , H01L21/02 , H01L33/00 , H01L33/32 , H01L29/205 , H01L29/225 , H01L29/20
CPC分类号： H01L29/155 , C30B23/02 , C30B23/025 , C30B25/02 , C30B25/18 , C30B25/183 , C30B29/06 , C30B29/403 , C30B29/406 , C30B29/68 , H01L21/02381 , H01L21/02422 , H01L21/0243 , H01L21/02433 , H01L21/0245 , H01L21/02458 , H01L21/02507 , H01L21/0251 , H01L21/0254 , H01L21/02598 , H01L21/0262 , H01L29/04 , H01L29/045 , H01L29/0649 , H01L29/2003 , H01L29/201 , H01L29/205 , H01L29/225 , H01L29/66462 , H01L29/7787 , H01L29/78 , H01L33/0066 , H01L33/007 , H01L33/0075 , H01L33/04 , H01L33/06 , H01L33/12 , H01L33/32 , Y10T428/24942 , Y10T428/26 , Y10T428/265
摘要： The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in the gallium nitride material layer which can result from differences in thermal expansion rates between the gallium nitride material and the substrate. The lowering of stresses in the gallium nitride material layer reduces the tendency of cracks to form. Thus, the invention enables the production of semiconductor materials including gallium nitride material layers having few or no cracks. The semiconductor materials may be used in a number of microelectronic and optical applications.
摘要翻译： 本发明提供了包括在硅衬底上形成的氮化镓材料层的半导体材料以及形成半导体材料的方法。 半导体材料包括在硅衬底和氮化镓材料层之间形成的过渡层。 过渡层由氮化镓材料与衬底之间的热膨胀率差异导致的氮化镓材料层中的应力变得较低。 氮化镓材料层中的应力降低降低了形成裂纹的倾向。 因此，本发明能够生产包括几乎没有或没有裂纹的氮化镓材料层的半导体材料。 半导体材料可以用于许多微电子和光学应用中。
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公开(公告)号：US08928034B2
公开(公告)日：2015-01-06
申请号：US14084251
申请日：2013-11-19
IPC分类号： H01L29/66 , H01L29/15 , C30B23/02 , C30B25/02 , C30B25/18 , C30B29/40 , H01L21/02 , H01L33/00 , H01L33/32 , H01L29/205 , H01L29/225 , H01L29/20
CPC分类号： H01L29/155 , C30B23/02 , C30B23/025 , C30B25/02 , C30B25/18 , C30B25/183 , C30B29/06 , C30B29/403 , C30B29/406 , C30B29/68 , H01L21/02381 , H01L21/02422 , H01L21/0243 , H01L21/02433 , H01L21/0245 , H01L21/02458 , H01L21/02507 , H01L21/0251 , H01L21/0254 , H01L21/02598 , H01L21/0262 , H01L29/04 , H01L29/045 , H01L29/0649 , H01L29/2003 , H01L29/201 , H01L29/205 , H01L29/225 , H01L29/66462 , H01L29/7787 , H01L29/78 , H01L33/0066 , H01L33/007 , H01L33/0075 , H01L33/04 , H01L33/06 , H01L33/12 , H01L33/32 , Y10T428/24942 , Y10T428/26 , Y10T428/265
摘要： The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in the gallium nitride material layer which can result from differences in thermal expansion rates between the gallium nitride material and the substrate. The lowering of stresses in the gallium nitride material layer reduces the tendency of cracks to form. Thus, the invention enables the production of semiconductor materials including gallium nitride material layers having few or no cracks. The semiconductor materials may be used in a number of microelectronic and optical applications.
摘要翻译： 本发明提供了包括在硅衬底上形成的氮化镓材料层的半导体材料以及形成半导体材料的方法。 半导体材料包括在硅衬底和氮化镓材料层之间形成的过渡层。 过渡层由氮化镓材料与衬底之间的热膨胀速率差异导致的氮化镓材料层中的应力成分梯度降低。 氮化镓材料层中的应力降低降低了形成裂纹的倾向。 因此，本发明能够生产包括几乎没有或没有裂纹的氮化镓材料层的半导体材料。 半导体材料可以用于许多微电子和光学应用中。
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公开(公告)号：US20140131659A1
公开(公告)日：2014-05-15
申请号：US14083923
申请日：2013-11-19
IPC分类号： H01L29/15
CPC分类号： H01L29/155 , C30B23/02 , C30B23/025 , C30B25/02 , C30B25/18 , C30B25/183 , C30B29/06 , C30B29/403 , C30B29/406 , C30B29/68 , H01L21/02381 , H01L21/02422 , H01L21/0243 , H01L21/02433 , H01L21/0245 , H01L21/02458 , H01L21/02507 , H01L21/0251 , H01L21/0254 , H01L21/02598 , H01L21/0262 , H01L29/04 , H01L29/045 , H01L29/0649 , H01L29/2003 , H01L29/201 , H01L29/205 , H01L29/225 , H01L29/66462 , H01L29/7787 , H01L29/78 , H01L33/0066 , H01L33/007 , H01L33/0075 , H01L33/04 , H01L33/06 , H01L33/12 , H01L33/32 , Y10T428/24942 , Y10T428/26 , Y10T428/265
摘要： The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in the gallium nitride material layer which can result from differences in thermal expansion rates between the gallium nitride material and the substrate. The lowering of stresses in the gallium nitride material layer reduces the tendency of cracks to form. Thus, the invention enables the production of semiconductor materials including gallium nitride material layers having few or no cracks. The semiconductor materials may be used in a number of microelectronic and optical applications.
摘要翻译： 本发明提供了包括在硅衬底上形成的氮化镓材料层的半导体材料以及形成半导体材料的方法。 半导体材料包括在硅衬底和氮化镓材料层之间形成的过渡层。 过渡层由氮化镓材料与衬底之间的热膨胀率差异导致的氮化镓材料层中的应力变得较低。 氮化镓材料层中的应力降低降低了形成裂纹的倾向。 因此，本发明能够生产包括几乎没有或没有裂纹的氮化镓材料层的半导体材料。 半导体材料可以用于许多微电子和光学应用中。
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10.发明申请Gallium Nitride Semiconductor Structures With Compositionally-Graded Transition Layer 有权具有组成层析过渡层的氮化镓半导体结构公开(公告)号：US20140353680A1
公开(公告)日：2014-12-04
申请号：US14452203
申请日：2014-08-05
CPC分类号： H01L29/155 , C30B23/02 , C30B23/025 , C30B25/02 , C30B25/18 , C30B25/183 , C30B29/06 , C30B29/403 , C30B29/406 , C30B29/68 , H01L21/02381 , H01L21/02422 , H01L21/0243 , H01L21/02433 , H01L21/0245 , H01L21/02458 , H01L21/02507 , H01L21/0251 , H01L21/0254 , H01L21/02598 , H01L21/0262 , H01L29/04 , H01L29/045 , H01L29/0649 , H01L29/2003 , H01L29/201 , H01L29/205 , H01L29/225 , H01L29/66462 , H01L29/7787 , H01L29/78 , H01L33/0066 , H01L33/007 , H01L33/0075 , H01L33/04 , H01L33/06 , H01L33/12 , H01L33/32 , Y10T428/24942 , Y10T428/26 , Y10T428/265
摘要： The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in the gallium nitride material layer which can result from differences in thermal expansion rates between the gallium nitride material and the substrate. The lowering of stresses in the gallium nitride material layer reduces the tendency of cracks to form. Thus, the invention enables the production of semiconductor materials including gallium nitride material layers having few or no cracks. The semiconductor materials may be used in a number of microelectronic and optical applications.
摘要翻译： 本发明提供了包括在硅衬底上形成的氮化镓材料层的半导体材料以及形成半导体材料的方法。 半导体材料包括在硅衬底和氮化镓材料层之间形成的过渡层。 过渡层由氮化镓材料与衬底之间的热膨胀率差异导致的氮化镓材料层中的应力变得较低。 氮化镓材料层中的应力降低降低了形成裂纹的倾向。 因此，本发明能够生产包括几乎没有或没有裂纹的氮化镓材料层的半导体材料。 半导体材料可以用于许多微电子和光学应用中。
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