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    Method and device for characterizing wafers during the production of solar cells
    1.
    发明授权
    Method and device for characterizing wafers during the production of solar cells 有权
    在制造太阳能电池期间表征晶片的方法和装置

    公开(公告)号：US08679361B2

    公开(公告)日：2014-03-25

    申请号：US11871061

    申请日：2007-10-11

    申请人： Jörg Müller ,  Jörg Isenberg ,  Jörn Suthues ,  Martin Bivour ,  Jean Patrice Rakotoniaina

    发明人： Jörg Müller ,  Jörg Isenberg ,  Jörn Suthues ,  Martin Bivour ,  Jean Patrice Rakotoniaina

    IPC分类号： B44C1/22

    CPC分类号： H01L31/1804 ,  G01R31/2648 ,  H01L21/67057 ,  H01L21/67086 ,  H01L21/67253 ,  Y02E10/547 ,  Y02P70/521

    摘要： The invention relates to a method and device for characterizing wafers during the production of solar cells. Characterizing wafers includes a) providing a wafer and carrying out a production process with the wafer for producing a solar cell or a plurality of solar cells; b) carrying out a wet chemical step with the wafer during the production process, wherein the wet chemical step decreases an influence of the wafer surface on a lifetime of charge carriers in the wafer; c) irradiating the wafer with light for creating the charge carriers in the wafer during the wet chemical step or after the wet chemical step; d) determining the lifetime of the charge carriers created in step c); and e) characterizing the wafer by means of the lifetime determined in step d).

    摘要翻译： 本发明涉及在制造太阳能电池期间表征晶片的方法和装置。 表征晶片的方法包括：a）提供一个晶片，并与该晶圆进行生产过程以制造一个太阳能电池或多个太阳能电池; b）在制造过程中与晶片进行湿化学步骤，其中湿化学步骤降低晶片表面对晶片寿命的影响; c）在湿化学步骤期间或在湿化学步骤之后，用光照射晶片以在晶片中产生载流子; d）确定在步骤c）中产生的电荷载体的寿命; 以及e）通过在步骤d）中确定的寿命来表征所述晶片。

    METHOD AND DEVICE FOR CHARACTERIZING WAFERS DURING THE PRODUCTION OF SOLAR CELLS
    2.
    发明申请
    METHOD AND DEVICE FOR CHARACTERIZING WAFERS DURING THE PRODUCTION OF SOLAR CELLS 有权
    在太阳能电池生产过程中表征波形的方法和装置

    公开(公告)号：US20080087643A1

    公开(公告)日：2008-04-17

    申请号：US11871061

    申请日：2007-10-11

    申请人： Jorg Muller ,  Jorg Isenberg ,  Jorn Suthues ,  Martin Bivour ,  Jean Patrice Rakotoniaina

    发明人： Jorg Muller ,  Jorg Isenberg ,  Jorn Suthues ,  Martin Bivour ,  Jean Patrice Rakotoniaina

    IPC分类号： B44C1/22 ,  B08B3/00

    CPC分类号： H01L31/1804 ,  G01R31/2648 ,  H01L21/67057 ,  H01L21/67086 ,  H01L21/67253 ,  Y02E10/547 ,  Y02P70/521

    摘要： The invention relates to a method for characterizing wafers during the production of solar cells, comprising the steps: a) providing a wafer and carrying out a production process with the wafer for producing a solar cell or a plurality of solar cells; b) carrying out a wet chemical step with the wafer during the production process, wherein the wet chemical step decreases an influence of the wafer surface on the lifetime of charge carriers in the wafer; c) irradiating the wafer with light for creating charge carriers in the wafer during the wet chemical step or after the wet chemical step; d) determining the lifetime of the charge carriers created in step c); and e) characterizing the wafer by means of the lifetime determined in step d). In a second aspect, the invention relates to a device for characterizing wafers during the production of solar cells.

    摘要翻译： 本发明涉及在太阳能电池生产过程中表征晶片的方法，其特征在于包括以下步骤：a）提供晶圆并用晶片生产太阳能电池或多个太阳能电池进行生产过程; b）在制造过程中与晶片进行湿化学步骤，其中湿化学步骤降低晶片表面对晶片中电荷载体寿命的影响; c）在湿化学步骤期间或在湿化学步骤之后，在晶片上照射用于在晶片中产生电荷载体的光; d）确定在步骤c）中产生的电荷载体的寿命; 以及e）通过在步骤d）中确定的寿命来表征所述晶片。 在第二方面，本发明涉及在太阳能电池生产期间表征晶片的装置。

    Semiconductor wafer pre-process annealing and gettering method and system for solar cell formation
    3.
    发明授权
    Semiconductor wafer pre-process annealing and gettering method and system for solar cell formation 失效
    半导体晶片预处理退火和吸收太阳能电池形成的方法和系统

    公开(公告)号：US08316745B2

    公开(公告)日：2012-11-27

    申请号：US13218632

    申请日：2011-08-26

    申请人： Fritz G. Kirscht ,  Kamel Ounadjela ,  Jean Patrice Rakotoniaina ,  Dieter Linke

    发明人： Fritz G. Kirscht ,  Kamel Ounadjela ,  Jean Patrice Rakotoniaina ,  Dieter Linke

    IPC分类号： B26D7/06

    CPC分类号： H01L31/18 ,  H01L21/304 ,  H01L21/3221 ,  H01L31/186 ,  Y02E10/50 ,  Y02P70/521 ,  Y10T83/04 ,  Y10T83/0453

    摘要： Techniques are here disclosed for a solar cell pre-processing method and system for annealing and gettering a solar cell semiconductor wafer having an undesirably high dispersion of transition metals, impurities and other defects. The process forms a surface contaminant layer on the solar cell semiconductor (e.g., silicon) wafer. A surface of the semiconductor wafer receives and holds impurities, as does the surface contaminant layer. The lower-quality semiconductor wafer includes dispersed defects that in an annealing process getter from the semiconductor bulk to form impurity cluster toward the surface contaminant layer. The impurity clusters form within the surface contaminant layer while increasing the purity level in wafer regions from which the dispersed defects gettered. Cooling follows annealing for retaining the impurity clusters and, thereby, maintaining the increased purity level of the semiconductor wafer in regions from which the impurities gettered. Multicrystalline semiconductor wafers having grain boundaries with impurities may also undergo the annealing and gettering of dispersed defects to the grain boundaries, further increasing the semiconductor substrate purity levels.

    摘要翻译： 这里公开了用于退火和吸收太阳能电池半导体晶片的太阳能电池预处理方法和系统的技术，所述太阳能电池半导体晶片具有不希望的高过渡金属，杂质和其它缺陷的分散。 该工艺在太阳能电池半导体（例如硅）晶片上形成表面污染物层。 半导体晶片的表面与表面污染物层一样接收和保持杂质。 较低质量的半导体晶片包括在退火工艺中从半导体体积吸收而形成杂质簇朝向表面污染物层的分散缺陷。 杂质簇形成在表面污染物层内，同时增加晶片区域中的纯度水平，分散的缺陷从该区域中得到。 通过冷却进行退火以保留杂质簇，从而在杂质吸收的区域保持半导体晶片的增加的纯度水平。 具有杂质晶界的多晶半导体晶片也可以经历退火和吸收分散的缺陷到晶界，进一步提高半导体衬底纯度水平。