公开(公告)号：US09754880B2

公开(公告)日：2017-09-05

申请号：US15016376

申请日：2016-02-05

申请人： Jae-Jik Baek ,  Kee-Sang Kwon ,  Sang-Jine Park ,  Bo-Un Yoon

发明人： Jae-Jik Baek ,  Kee-Sang Kwon ,  Sang-Jine Park ,  Bo-Un Yoon

IPC分类号： H01L23/52 ,  H01L23/528 ,  H01L23/522 ,  H01L23/532 ,  H01L27/088 ,  H01L21/8234

CPC分类号： H01L23/528 ,  H01L21/76804 ,  H01L21/76843 ,  H01L21/76847 ,  H01L21/76865 ,  H01L21/76897 ,  H01L21/823475 ,  H01L23/485 ,  H01L23/5226 ,  H01L23/5283 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L27/088 ,  H01L27/0886

摘要： The semiconductor device may include an insulating interlayer on the substrate, the substrate including a contact region at an upper portion thereof, a main contact plug penetrating through the insulating interlayer and contacting the contact region, the main contact plug having a pillar shape and including a first barrier pattern and a first metal pattern, and an extension pattern surrounding on an upper sidewall of the main contact plug, the extension pattern including a barrier material. In the semiconductor device, an alignment margin between the contact structure and an upper wiring thereon may increase. Also, a short failure between the contact structure and the gate electrode may be reduced.

公开(公告)号：US20160284699A1

公开(公告)日：2016-09-29

申请号：US15007882

申请日：2016-01-27

申请人： Ji-Min Jeong ,  Kee-Sang Kwon ,  Jin-Wook Lee ,  Ki-Hyung Ko ,  Sang-Jine Park ,  Jae-Jik Baek ,  Bo-Un Yoon ,  Ji-Won Yun

发明人： Ji-Min Jeong ,  Kee-Sang Kwon ,  Jin-Wook Lee ,  Ki-Hyung Ko ,  Sang-Jine Park ,  Jae-Jik Baek ,  Bo-Un Yoon ,  Ji-Won Yun

IPC分类号： H01L27/088 ,  H01L29/423 ,  H01L29/49

CPC分类号： H01L27/0886 ,  H01L21/82345 ,  H01L27/088 ,  H01L29/42376 ,  H01L29/4966 ,  H01L29/6656

摘要： A semiconductor device is provided. The semiconductor device includes a gate spacer that defines a trench on a substrate and includes an upper part and a lower part, a gate insulating film that extends along sidewalls and a bottom surface of the trench and is not in contact with the upper part of the gate spacer, a lower conductive film that extends on the gate insulating film along the sidewalls and the bottom surface of the trench and is not overlapped with the upper part of the gate spacer, and an upper conductive film on an uppermost part of the gate insulating film on the lower conductive film.

摘要翻译： 提供半导体器件。 半导体器件包括限定衬底上的沟槽并包括上部和下部的栅极间隔物，栅极绝缘膜，其沿着沟槽的侧壁和底表面延伸并且不与所述沟槽的上部接触 栅极间隔物，沿着沟槽的侧壁和底面在栅极绝缘膜上延伸的下部导电膜，并且不与栅极间隔物的上部重叠，并且栅极绝缘的最上部的上部导电膜 在下导电膜上的膜。

公开(公告)号：US10128236B2

公开(公告)日：2018-11-13

申请号：US15007882

申请日：2016-01-27

申请人： Ji-Min Jeong ,  Kee-Sang Kwon ,  Jin-Wook Lee ,  Ki-Hyung Ko ,  Sang-Jine Park ,  Jae-Jik Baek ,  Bo-Un Yoon ,  Ji-Won Yun

发明人： Ji-Min Jeong ,  Kee-Sang Kwon ,  Jin-Wook Lee ,  Ki-Hyung Ko ,  Sang-Jine Park ,  Jae-Jik Baek ,  Bo-Un Yoon ,  Ji-Won Yun

IPC分类号： H01L29/772 ,  H01L27/088 ,  H01L29/49 ,  H01L29/423 ,  H01L29/66 ,  H01L21/8234

摘要： A semiconductor device is provided. The semiconductor device includes a gate spacer that defines a trench on a substrate and includes an upper part and a lower part, a gate insulating film that extends along sidewalls and a bottom surface of the trench and is not in contact with the upper part of the gate spacer, a lower conductive film that extends on the gate insulating film along the sidewalls and the bottom surface of the trench and is not overlapped with the upper part of the gate spacer, and an upper conductive film on an uppermost part of the gate insulating film on the lower conductive film.

公开(公告)号：US08652915B2

公开(公告)日：2014-02-18

申请号：US13212380

申请日：2011-08-18

申请人： Kevin Ahn ,  Sang-Jine Park ,  Jae-Jik Baek ,  Bo-Un Yoon ,  Jeong-Nam Han

发明人： Kevin Ahn ,  Sang-Jine Park ,  Jae-Jik Baek ,  Bo-Un Yoon ,  Jeong-Nam Han

IPC分类号： H01L21/336

CPC分类号： H01L21/02532 ,  H01L21/0262 ,  H01L21/3083 ,  H01L29/66545 ,  H01L29/66636

摘要： A method of fabricating a semiconductor device can be provided by etching sidewalls of a preliminary trench in a substrate that are between immediately adjacent gate electrode structures, to recess the sidewalls further beneath the gate electrode structures to provide recessed sidewalls. Then, the recessed sidewalls and a bottom of the preliminary trench can be etched using crystallographic anisotropic etching to form a hexagonally shaped trench in the substrate.

摘要翻译： 半导体器件的制造方法可以通过蚀刻位于紧邻的栅电极结构之间的衬底中的预备沟槽的侧壁，从而在栅极电极结构之下进一步凹入侧壁以提供凹入的侧壁。 然后，可以使用晶体各向异性蚀刻来蚀刻预备沟槽的凹陷侧壁和底部，以在衬底中形成六边形形状的沟槽。

公开(公告)号：US20120049250A1

公开(公告)日：2012-03-01

申请号：US13191055

申请日：2011-07-26

申请人： Sang-Jine Park ,  Bo-Un Yoon ,  Jeong-Nam Han ,  Jae-Jik Baek ,  Byung-Kwon Cho

发明人： Sang-Jine Park ,  Bo-Un Yoon ,  Jeong-Nam Han ,  Jae-Jik Baek ,  Byung-Kwon Cho

IPC分类号： H01L29/78

CPC分类号： H01L29/7833 ,  H01L21/30608 ,  H01L21/823807 ,  H01L21/823814 ,  H01L29/165 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/66636 ,  H01L29/7848

摘要： A semiconductor integrated circuit device includes a substrate. A gate structure is formed on the substrate and includes a gate insulating film and a gate electrode. A first sidewall spacer is formed on two sidewalls of the gate structure. A second sidewall spacer is formed on the first sidewall spacer. A recess compensation film is interposed between the second sidewall spacer and the substrate. An epitaxial layer is in contact with the recess compensation film.

摘要翻译： 半导体集成电路器件包括衬底。 栅极结构形成在衬底上并且包括栅极绝缘膜和栅电极。 第一侧壁间隔件形成在栅极结构的两个侧壁上。 在第一侧壁间隔件上形成第二侧壁间隔物。 在第二侧壁间隔件和基板之间设置凹陷补偿膜。 外延层与凹部补偿膜接触。

公开(公告)号：US20120058616A1

公开(公告)日：2012-03-08

申请号：US13212380

申请日：2011-08-18

申请人： Kevin Ahn ,  Sang-Jine Park ,  Jae-Jik Baek ,  Bo-Un Yoon ,  Jeong-Nam Han

发明人： Kevin Ahn ,  Sang-Jine Park ,  Jae-Jik Baek ,  Bo-Un Yoon ,  Jeong-Nam Han

IPC分类号： H01L21/336 ,  H01L21/20 ,  H01L21/28

CPC分类号： H01L21/02532 ,  H01L21/0262 ,  H01L21/3083 ,  H01L29/66545 ,  H01L29/66636

摘要： A method of fabricating a semiconductor device can be provided by etching sidewalls of a preliminary trench in a substrate that are between immediately adjacent gate electrode structures, to recess the sidewalls further beneath the gate electrode structures to provide recessed sidewalls. Then, the recessed sidewalls and a bottom of the preliminary trench can be etched using crystallographic anisotropic etching to form a hexagonally shaped trench in the substrate.

摘要翻译： 半导体器件的制造方法可以通过蚀刻位于紧邻的栅电极结构之间的衬底中的预备沟槽的侧壁，从而在栅极电极结构之下进一步凹入侧壁以提供凹入的侧壁。 然后，可以使用晶体各向异性蚀刻来蚀刻预备沟槽的凹陷侧壁和底部，以在衬底中形成六边形形状的沟槽。

公开(公告)号：US09548309B2

公开(公告)日：2017-01-17

申请号：US15047181

申请日：2016-02-18

申请人： Sang-Jine Park ,  Kee-Sang Kwon ,  Do-Hyoung Kim ,  Bo-Un Yoon ,  Keun-Hee Bai ,  Kwang-Yong Yang ,  Kyoung-Hwan Yeo ,  Yong-Ho Jeon

发明人： Sang-Jine Park ,  Kee-Sang Kwon ,  Do-Hyoung Kim ,  Bo-Un Yoon ,  Keun-Hee Bai ,  Kwang-Yong Yang ,  Kyoung-Hwan Yeo ,  Yong-Ho Jeon

IPC分类号： H01L27/11 ,  H01L29/06 ,  H01L29/08 ,  H01L27/088 ,  H01L21/8234 ,  H01L27/092 ,  H01L29/16 ,  H01L29/161 ,  H01L29/165 ,  H01L29/78

CPC分类号： H01L27/1104 ,  H01L21/76224 ,  H01L21/823431 ,  H01L21/823437 ,  H01L21/823481 ,  H01L27/0886 ,  H01L27/0924 ,  H01L27/1116 ,  H01L29/06 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/165 ,  H01L29/7848

摘要： Semiconductor devices including a dummy gate structure on a fin are provided. A semiconductor device includes a fin protruding from a substrate. The semiconductor device includes a source/drain region in the fin, and a recess region of the fin that is between first and second portions of the source/drain region. Moreover, the semiconductor device includes a dummy gate structure overlapping the recess region, and a spacer that is on the fin and adjacent a sidewall of the dummy gate structure.

摘要翻译： 提供了包括翅片上的虚拟栅极结构的半导体器件。 半导体器件包括从衬底突出的翅片。 半导体器件包括翅片中的源极/漏极区域以及位于源极/漏极区域的第一和第二部分之间的鳍片的凹陷区域。 此外，半导体器件包括与凹陷区域重叠的虚拟栅极结构，以及位于鳍上且与伪栅极结构的侧壁相邻的间隔物。

公开(公告)号：US09054210B2

公开(公告)日：2015-06-09

申请号：US13479679

申请日：2012-05-24

申请人： Sang-Jine Park ,  Doo-Sung Yun ,  Bo-Un Yoon ,  Jeong-Nam Han ,  Kee-Sang Kwon ,  Won-Sang Choi

发明人： Sang-Jine Park ,  Doo-Sung Yun ,  Bo-Un Yoon ,  Jeong-Nam Han ,  Kee-Sang Kwon ,  Won-Sang Choi

IPC分类号： H01L21/20 ,  H01L21/36 ,  H01L21/8234 ,  H01L21/285 ,  H01L21/02 ,  H01L29/78 ,  H01L21/768 ,  H01L21/311

CPC分类号： H01L21/823425 ,  H01L21/02063 ,  H01L21/28518 ,  H01L21/31116 ,  H01L21/76814 ,  H01L21/76897 ,  H01L21/823475 ,  H01L29/78

摘要： A method of fabricating a semiconductor device, the method including forming on a substrate a transistor that includes a gate electrode and a source and drain region, forming an interlayer insulating film on the transistor, forming a contact hole in the interlayer insulating film to expose a top surface of the source and drain region, and a thin film is formed at an interface between the contact hole and the exposed top surface of the source and drain region. The method further including selectively removing at least a portion of the thin film by performing an etching process in a non-plasma atmosphere, forming an ohmic contact film on the source and drain region where at least a portion of the thin film was selectively removed, and forming a contact plug by filling the contact hole with a conductive material.

摘要翻译： 一种制造半导体器件的方法，所述方法包括在衬底上形成包括栅极和源极和漏极区的晶体管，在所述晶体管上形成层间绝缘膜，在所述层间绝缘膜中形成接触孔以暴露出 源极和漏极区域的顶表面，并且在接触孔和源极和漏极区域的暴露顶表面之间的界面处形成薄膜。 该方法还包括通过在非等离子体气氛中进行蚀刻工艺来选择性地去除薄膜的至少一部分，在选择性地去除薄膜的至少一部分的源区和漏区上形成欧姆接触膜， 以及通过用导电材料填充接触孔来形成接触塞。

公开(公告)号：US08673724B2

公开(公告)日：2014-03-18

申请号：US13561245

申请日：2012-07-30

申请人： Sang-Jine Park ,  Kee-Sang Kwon ,  Doo-Sung Yun ,  Bo-Un Yoon ,  Jeong-Nam Han

发明人： Sang-Jine Park ,  Kee-Sang Kwon ,  Doo-Sung Yun ,  Bo-Un Yoon ,  Jeong-Nam Han

IPC分类号： H01L21/336

CPC分类号： H01L29/66636 ,  H01L21/76224 ,  H01L29/0657 ,  H01L29/78 ,  H01L29/7848

摘要： Provided are methods of fabricating a semiconductor device that include providing a substrate that includes a first region having a gate pattern and a second region having a first trench and an insulating layer that fills the first trench. A portion of a sidewall of the first trench is exposed by etching part of the insulating layer and a first spacer is formed on a sidewall of the gate pattern. A second spacer is formed on the exposed sidewall of the first trench, wherein the first spacer and the second spacer are formed simultaneously.

摘要翻译： 提供制造半导体器件的方法，其包括提供包括具有栅极图案的第一区域和具有填充第一沟槽的第一沟槽和绝缘层的第二区域的衬底。 通过蚀刻绝缘层的一部分露出第一沟槽的侧壁的一部分，并且在栅极图案的侧壁上形成第一间隔物。 第二间隔件形成在第一沟槽的暴露的侧壁上，其中第一间隔件和第二间隔件同时形成。

公开(公告)号：US08709942B2

公开(公告)日：2014-04-29

申请号：US13488478

申请日：2012-06-05

申请人： Sang-Jine Park ,  Kee-Sang Kwon ,  Doo-Sung Yun ,  Bo-Un Yoon ,  Il-Young Yoon ,  Jeong-Nam Han

发明人： Sang-Jine Park ,  Kee-Sang Kwon ,  Doo-Sung Yun ,  Bo-Un Yoon ,  Il-Young Yoon ,  Jeong-Nam Han

IPC分类号： H01L21/4763

CPC分类号： H01L21/76808 ,  H01L21/31144 ,  H01L21/76811 ,  H01L21/76816

摘要： In a method for fabricating a semiconductor device, a substrate is provided including an interlayer dielectric layer and first and second hard mask patterns sequentially stacked thereon. A first trench is provided in the interlayer dielectric layer through the second hard mask pattern and the first hard mask pattern. A filler material is provided on the interlayer dielectric layer and the second hard mask pattern to fill the first trench. An upper portion of the second hard mask pattern is exposed by partially removing the filler material. The second hard mask pattern is removed, and remaining filler material is removed from the first trench. A wiring is formed by filling the first trench with a conductive material.

摘要翻译： 在制造半导体器件的方法中，提供了包括层间介电层和顺序堆叠在其上的第一和第二硬掩模图案的衬底。 第一沟槽通过第二硬掩模图案和第一硬掩模图案设置在层间介质层中。 在层间介电层和第二硬掩模图案上设置填充材料以填充第一沟槽。 通过部分去除填充材料来暴露第二硬掩模图案的上部。 去除第二硬掩模图案，并且从第一沟槽去除剩余的填充材料。 通过用导电材料填充第一沟槽来形成布线。