公开(公告)号：US07273822B2

公开(公告)日：2007-09-25

申请号：US11038324

申请日：2005-01-19

申请人： Jae-Hyun Yeo ,  Young-Wook Park ,  Ki-Chul Kim ,  Jae-Jong Han

发明人： Jae-Hyun Yeo ,  Young-Wook Park ,  Ki-Chul Kim ,  Jae-Jong Han

IPC分类号： H01L21/31

CPC分类号： C23C16/44 ,  H01L21/28562 ,  H01L21/3141 ,  H01L21/31604 ,  H01L21/31637 ,  H01L21/31641 ,  H01L21/31645 ,  H01L21/31691

摘要： Methods and apparatus are provided for forming thin films for semiconductor devices, which enable supplying and removing reactants containing constituent elements of a thin film to be formed, by preheating and supplying a process gas and a purging gas at a predetermined temperature in forming the thin film on a substrate. For example, a method for forming a thin film includes supplying a first reactant to a chamber to chemically adsorb the first reactant onto a substrate, the first reactant being bubbled by a first gas that is preheated, purging the chamber to remove residues on the substrate having the first reactant chemically adsorbed, and forming the thin film by a means of chemical displacement by supplying a second reactant to the chamber to chemically adsorb the second reactant onto the substrate.

摘要翻译： 提供了用于形成用于半导体器件的薄膜的方法和装置，其能够通过在预定温度下预热和提供处理气体和净化气体来形成薄膜来提供和除去含有待形成的薄膜的构成元素的反应物 在基板上。 例如，用于形成薄膜的方法包括将第一反应物供应到室以化学吸附第一反应物到基底上，第一反应物被预热的第一气体鼓泡，清洗室以除去基底上的残留物 使所述第一反应物被化学吸附，并且通过向所述室供应第二反应物以化学吸附所述第二反应物到所述基底上，通过化学位移形成所述薄膜。

公开(公告)号：US20080029031A1

公开(公告)日：2008-02-07

申请号：US11838998

申请日：2007-08-15

申请人： Jae-Hyun Yeo ,  Young-Wook Park ,  Ki-Chul Kim ,  Jae-Jong Han

发明人： Jae-Hyun Yeo ,  Young-Wook Park ,  Ki-Chul Kim ,  Jae-Jong Han

IPC分类号： C23C16/54

CPC分类号： C23C16/44 ,  H01L21/28562 ,  H01L21/3141 ,  H01L21/31604 ,  H01L21/31637 ,  H01L21/31641 ,  H01L21/31645 ,  H01L21/31691

摘要： Methods and apparatus are provided for forming thin films for semiconductor devices, which enable supplying and removing reactants containing constituent elements of a thin film to be formed, by preheating and supplying a process gas and a purging gas at a predetermined temperature in forming the thin film on a substrate. For example, a method for forming a thin film includes supplying a first reactant to a chamber to chemically absorb the first reactant onto a substrate, the first reactant being bubbled by a first gas that is preheated, purging the chamber to remove residues on the substrate having the first reactant chemically absorbed, and forming the thin film by a means of chemical displacement by supplying a second reactant to the chamber to chemically absorb the second reactant onto the substrate.

摘要翻译： 提供了用于形成用于半导体器件的薄膜的方法和装置，其能够通过在预定温度下预热和提供处理气体和净化气体来形成薄膜来提供和除去含有待形成的薄膜的构成元素的反应物 在基板上。 例如，形成薄膜的方法包括将第一反应物供应到室以将第一反应物化学吸收到基底上，第一反应物被预热的第一气体鼓泡，清洗室以除去基底上的残留物 使所述第一反应物被化学吸收，并且通过向所述室供应第二反应物以化学吸收所述第二反应物到所述衬底上，通过化学位移形成所述薄膜。

公开(公告)号：US07118975B2

公开(公告)日：2006-10-10

申请号：US10872360

申请日：2004-06-22

申请人： Jae-Jong Han ,  Young-Wook Park ,  Jae-Hyun Yeo

发明人： Jae-Jong Han ,  Young-Wook Park ,  Jae-Hyun Yeo

IPC分类号： H01L21/336

CPC分类号： H01L29/66621 ,  H01L21/28123 ,  H01L21/76235 ,  H01L21/823481 ,  H01L27/105 ,  H01L27/1052 ,  H01L27/10876

摘要： Provided is a method for manufacturing semiconductor devices including channel trenches that are separated by isolation structures. According to the process, the substrate is etched to form isolation trenches after which a sidewall oxide layer, a liner nitride layer and a field oxide layer are subsequently formed on the substrate and in the isolation trenches. The substrate is then planarized to remove upper portions of the sidewall oxide layer, the liner nitride layer and the field oxide layer to expose surface portions of the substrate between adjacent isolation trench structures. Channel trenches are then formed in the exposed surface portions of the substrate leaving residual substrate regions adjacent the isolation trench structures. These residual substrate regions are then oxidized and removed to form improved second channel trenches for the formation of transistor regions.

摘要翻译： 提供一种半导体器件的制造方法，其包括由隔离结构分离的沟槽。 根据该过程，蚀刻衬底以形成隔离沟槽，之后随后在衬底和隔离沟槽中形成侧壁氧化物层，衬里氮化物层和场氧化物层。 然后将衬底平坦化以除去侧壁氧化物层，衬里氮化物层和场氧化物层的上部，以暴露在相邻的隔离沟槽结构之间的衬底的表面部分。 然后在衬底的暴露的表面部分中形成通道沟槽，留下邻近隔离沟槽结构的残余衬底区域。 然后将这些残留的衬底区域氧化并除去以形成用于形成晶体管区域的改进的第二沟道沟槽。

公开(公告)号：US20050158977A1

公开(公告)日：2005-07-21

申请号：US11038324

申请日：2005-01-19

申请人： Jae-Hyun Yeo ,  Young-Wook Park ,  Ki-Chul Kim ,  Jae-Jong Han

发明人： Jae-Hyun Yeo ,  Young-Wook Park ,  Ki-Chul Kim ,  Jae-Jong Han

IPC分类号： H01L21/205 ,  H01L21/285 ,  H01L21/314 ,  H01L21/316 ,  H01L21/44 ,  H01L21/31 ,  H01L21/469

CPC分类号： C23C16/44 ,  H01L21/28562 ,  H01L21/3141 ,  H01L21/31604 ,  H01L21/31637 ,  H01L21/31641 ,  H01L21/31645 ,  H01L21/31691

摘要： Methods and apparatus are provided for forming thin films for semiconductor devices, which enable supplying and removing reactants containing constituent elements of a thin film to be formed, by preheating and supplying a process gas and a purging gas at a predetermined temperature in forming the thin film on a substrate. For example, a method for forming a thin film includes supplying a first reactant to a chamber to chemically adsorb the first reactant onto a substrate, the first reactant being bubbled by a first gas that is preheated, purging the chamber to remove residues on the substrate having the first reactant chemically adsorbed, and forming the thin film by a means of chemical displacement by supplying a second reactant to the chamber to chemically adsorb the second reactant onto the substrate.

摘要翻译： 提供了用于形成用于半导体器件的薄膜的方法和装置，其能够通过在预定温度下预热和提供处理气体和净化气体来形成薄膜来提供和除去含有待形成的薄膜的构成元素的反应物 在基板上。 例如，用于形成薄膜的方法包括将第一反应物供应到室以化学吸附第一反应物到基底上，第一反应物被预热的第一气体鼓泡，清洗室以除去基底上的残留物 使所述第一反应物被化学吸附，并且通过向所述室供应第二反应物以化学吸附所述第二反应物到所述基底上，通过化学位移形成所述薄膜。

公开(公告)号：US07763550B2

公开(公告)日：2010-07-27

申请号：US11061407

申请日：2005-02-18

申请人： Ji-Sang Yahng ,  Young-Wook Park ,  Jae-Jong Han ,  Jum-Soo Chang

发明人： Ji-Sang Yahng ,  Young-Wook Park ,  Jae-Jong Han ,  Jum-Soo Chang

IPC分类号： H01L21/31 ,  H01L21/677 ,  C23C16/00

CPC分类号： H01L21/02238 ,  H01L21/02255 ,  H01L21/31662 ,  H01L21/67109 ,  H01L21/67757 ,  Y10S414/136 ,  Y10S414/139

摘要： A layer is formed on a semiconductor wafer in an apparatus having a processing chamber, a transferring chamber, and a wafer boat. The boat having the semiconductor wafer thereon is rotated in the transferring chamber. While the boat is rotated, the boat is transferred between the transferring chamber and the processing chamber and a reaction gas is provided to the processing chamber to form the layer on the wafer.

摘要翻译： 在具有处理室，转印室和晶片舟皿的装置中的半导体晶片上形成层。 其上具有半导体晶片的船在转印室中旋转。 当船旋转时，船在转移室和处理室之间转移，并且反应气体被提供到处理室以在晶片上形成层。

公开(公告)号：US06794263B1

公开(公告)日：2004-09-21

申请号：US10367931

申请日：2003-02-19

申请人： Kong-Soo Lee ,  Young-Wook Park ,  Jae-Jong Han ,  Gi-Hyun Hwang ,  Kyoung-Seok Kim ,  Sung-Eui Kim ,  Seung-Mok Shin

发明人： Kong-Soo Lee ,  Young-Wook Park ,  Jae-Jong Han ,  Gi-Hyun Hwang ,  Kyoung-Seok Kim ,  Sung-Eui Kim ,  Seung-Mok Shin

IPC分类号： H01L2176

CPC分类号： H01L23/544 ,  G03F9/7076 ,  G03F9/708 ,  G03F9/7084 ,  H01L21/76229 ,  H01L2223/54453 ,  H01L2924/0002 ,  Y10S438/959 ,  Y10S438/975 ,  H01L2924/00

摘要： A method of inhibiting pit occurrence on a semiconductor substrate during manufacture of a semiconductor device includes forming an isolation using a shallow trench isolation (STI) method in a semiconductor substrate, forming an insulation layer on an entire surface of the semiconductor substrate having the isolation, implanting ions into the semiconductor substrate using the insulation layer as a buffer layer, annealing the semiconductor substrate using a rapid thermal annealing (RTA) process, forming a photoresist layer on the insulation layer and then forming an opening in the photoresist layer to expose an underlayer thereof, forming an align key by etching the underlayer at the opening, and removing the photoresist layer and the insulation layer. Alternatively, the thickness of the insulation layer may be reduced to prevent the occurrence of pits on active areas of the semiconductor substrate.

摘要翻译： 在半导体器件的制造期间抑制半导体衬底上的凹坑产生的方法包括在半导体衬底中形成使用浅沟槽隔离（STI）方法的隔离，在具有隔离的半导体衬底的整个表面上形成绝缘层， 使用绝缘层作为缓冲层将离子注入到半导体衬底中，使用快速热退火（RTA）工艺对半导体衬底进行退火，在绝缘层上形成光致抗蚀剂层，然后在光刻胶层中形成开口以暴露底层 通过在开口处蚀刻底层形成对准键，以及去除光致抗蚀剂层和绝缘层。 或者，可以减小绝缘层的厚度，以防止在半导体衬底的有源区域上出现凹坑。

公开(公告)号：US20050233559A1

公开(公告)日：2005-10-20

申请号：US11061407

申请日：2005-02-18

申请人： Ji-Sang Yahng ,  Young-Wook Park ,  Jae-Jong Han ,  Jum-Soo Chang

发明人： Ji-Sang Yahng ,  Young-Wook Park ,  Jae-Jong Han ,  Jum-Soo Chang

IPC分类号： H01L21/31 ,  H01L21/00 ,  H01L21/20 ,  H01L21/205 ,  H01L21/316

CPC分类号： H01L21/02238 ,  H01L21/02255 ,  H01L21/31662 ,  H01L21/67109 ,  H01L21/67757 ,  Y10S414/136 ,  Y10S414/139

摘要： A layer is formed on a semiconductor wafer in an apparatus having a processing chamber, a transferring chamber, and a wafer boat. The boat having the semiconductor wafer thereon is rotated in the transferring chamber. While the boat is rotated, the boat is transferred between the transferring chamber and the processing chamber and a reaction gas is provided to the processing chamber to form the layer on the wafer.

摘要翻译： 在具有处理室，转印室和晶片舟皿的装置中的半导体晶片上形成层。 其上具有半导体晶片的船在转印室中旋转。 当船旋转时，船在转移室和处理室之间转移，并且反应气体被提供到处理室以在晶片上形成层。

公开(公告)号：US20050022741A1

公开(公告)日：2005-02-03

申请号：US10890959

申请日：2004-07-12

申请人： Jung-Hun Seo ,  Young-Wook Park ,  Jae-Jong Han

发明人： Jung-Hun Seo ,  Young-Wook Park ,  Jae-Jong Han

IPC分类号： H01L21/205 ,  C23C16/00 ,  C23C16/02 ,  C23C16/06 ,  C23C16/458 ,  C23C16/46 ,  H01L21/285 ,  H01L21/3205

CPC分类号： H01L21/32051 ,  C23C16/0272 ,  C23C16/06 ,  C23C16/4586 ,  C23C16/46 ,  C23C16/466 ,  H01L21/28556

摘要： In one embodiment, a chemical vapor deposition (CVD) apparatus comprising a plurality of backside gas (BSG) passages that pass through a heater table that controls a temperature of a plurality of local areas on a wafer and a method of forming a thin layer using the CVD apparatus are provided. The heater table comprises a wafer supporting area divided into a plurality of local areas that correspond to the local areas of the wafer. Each of the BSG passages has a BSG outlet that supplies the BSG, heated by a heater, to the local areas. Flow controllers control the flow through each of the BSG passages, thereby controlling the temperature of local areas.

摘要翻译： 在一个实施方案中，化学气相沉积（CVD）装置包括多个背面气体（BSG）通道，其通过加热台，该加热器台控制晶片上的多个局部区域的温度，以及使用 提供CVD装置。 加热器台包括分为对应于晶片的局部区域的多个局部区域的晶片支撑区域。 每个BSG通道具有BSG出口，其将由加热器加热的BSG供应到局部区域。 流量控制器控制通过每个BSG通道的流量，从而控制局部区域的温度。

公开(公告)号：US07498213B2

公开(公告)日：2009-03-03

申请号：US11530218

申请日：2006-09-08

申请人： Won-Jin Kim ,  Young-Wook Park ,  Jeong-Do Ryu

发明人： Won-Jin Kim ,  Young-Wook Park ,  Jeong-Do Ryu

IPC分类号： H01L21/338 ,  H01L21/336

CPC分类号： H01L21/0209 ,  H01L21/302 ,  H01L21/6708 ,  H01L21/76895 ,  H01L27/10844 ,  H01L27/10882 ,  H01L29/7842

摘要： Methods of fabricating a semiconductor device can include forming at least one layer on a first and a second side of a semiconductor substrate. Portions of the at least one layer may be removed on the first side of the semiconductor substrate to form a pattern of the at least one layer on the first side of the substrate while the at least one layer is maintained on the second side of the substrate. A capping layer can be formed on the pattern of the at least one layer on the first side of the substrate and on the at least one layer on the second side of the semiconductor substrate. The capping layer can be removed on the second side of the semiconductor substrate, thereby exposing the at least one layer on the second side of the substrate while maintaining the capping layer on the first side of the substrate. The at least one layer can be removed on the second side of the semiconductor substrate, while the capping layer and the pattern of the at least one layer is maintained on the first side of the semiconductor substrate. A portion of the capping layer can be removed on the first side of the semiconductor substrate.

摘要翻译： 制造半导体器件的方法可以包括在半导体衬底的第一和第二侧上形成至少一个层。 可以在半导体衬底的第一侧上去除至少一个层的部分，以在衬底的第一侧上形成至少一层的图案，同时将至少一层保持在衬底的第二面上 。 可以在衬底的第一侧上的至少一层的图案和半导体衬底的第二侧上的至少一个层上形成覆盖层。 可以在半导体衬底的第二侧上去除覆盖层，从而在衬底的第二侧上保持覆盖层的同时暴露衬底的第二面上的至少一个层。 可以在半导体衬底的第二侧上移除至少一个层，同时覆盖层和至少一层的图案保持在半导体衬底的第一侧上。 可以在半导体衬底的第一侧上去除覆盖层的一部分。

公开(公告)号：US07201807B2

公开(公告)日：2007-04-10

申请号：US10734479

申请日：2003-12-12

申请人： Eun-Taek Yim ,  Young-Wook Park ,  In-Sung Park ,  Han-Mei Choi ,  Kyoung-Seok Kim

发明人： Eun-Taek Yim ,  Young-Wook Park ,  In-Sung Park ,  Han-Mei Choi ,  Kyoung-Seok Kim

IPC分类号： B08B5/00 ,  B08B9/093

CPC分类号： C23C16/4405 ,  B08B7/00 ,  B08B7/0035 ,  H01J37/32862 ,  H01L21/3162 ,  Y10S438/905

摘要： Disclosed are a method for cleaning a deposition chamber by removing attached metal oxides, and a deposition apparatus for performing in situ cleaning. A first gas and a second gas are provided into the deposition chamber. The first gas is reacted with metal included in the metal oxide to generate reacting residues. The second gas then decomposes the reacting residues, and the decomposed residues are exhausted out of the chamber. Thus, this cleaning process can be rapidly accomplished while the deposition chamber is not opened or separated from a deposition apparatus.

摘要翻译： 公开了通过去除附着的金属氧化物来清洁沉积室的方法，以及用于进行原位清洁的沉积装置。 第一气体和第二气体被提供到沉积室中。 第一种气体与包含在金属氧化物中的金属反应以产生反应残余物。 然后第二气体分解反应残余物，并将分解的残余物排出室外。 因此，当沉积室不从沉积设备打开或分离时，可以快速实现该清洁过程。